30CTQ035S DEC | Alldatasheet

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30CTQ035S ... 30CTQ045S 30CTQ035S ... 30CTQ045S High Temperature Schottky Rectifier – Common Cathode Hochtemperatur Schottky Gleichrichterdiode – Gemeinsame Kathode Version 2013-06-04 Dimensions - Maße [mm] Nominal current Nennstrom 2 x 15 A Repetitive peak reverse voltage Periodische Spitzensperrspannung 35...45 V Plastic case Kunststoffgehäuse TO-263AB D2PAK Weight approx. Gewicht ca. 1.6 g Plastic material has UL classification 94V-0 Gehäusematerial UL94V-0 klassifiziert Standard packaging in tubes On request taped on 13” reel (add “R” to the part number) Standard Lieferform in Stangen Green Molding Auf Anfrage gegurtet auf 13” Rolle Halogen-Free1 (ergänze „R“ zur Artikelnummer) Maximum ratings and Characteristics Grenz- und Kennwerte Type Typ Repetitive peak reverse voltage Periodische Spitzensperrspannung VRRM [V] 2) Surge peak reverse voltage Stoßspitzensperrspannung VRSM [V] 2) Forward voltage Durchlass-Spannung VF [V] 2), Tj = 25°C IF = 5 A IF = 15 A 30CTQ035S 35 35 < 0.52 < 0.62 30CTQ040S 40 40 < 0.52 < 0.62 30CTQ045S 45 45 < 0.52 < 0.62 Max. average forward current Dauergrenzstrom TC = 155°C TC = 155°C IFAV IFAV

15 A 2) 3)

30 A 3) 4)

Repetitive peak forward current Periodischer Spitzenstrom f > 15 Hz IFRM 53 A 5) Peak forward surge current, 50 Hz half sine-wave Stoßstrom für eine 50 Hz Sinus-Halbwelle TA = 25°C IFSM 265 A 2) Rating for fusing, t < 10 ms Grenzlastintegral, t < 10 ms TA = 25°C i2t 351 A2s 2) Junction temperature – Sperrschichttemperatur Storage temperature – Lagerungstemperatur Tj TS -50...+175°C -50...+175°C

1 From 4Q/2013 – Ab 4Q/2013

2 Per diode – Pro Diode

3 50% Duty cycle, rectangular waveform − 50% Tastverhältnis, Rechteckpuls

4 Per device (parallel operation) − Pro Bauteil (Parallelbetrieb)

5 Max. temperature of the case TC = 100°C – Max. Temperatur des Gehäuses TC = 100°C © Diotec Semiconductor AG http://www.diotec.com/ 1 0.4 4.5 0.2± 1.2 5.08 0.8 1.3 Type Typ 10.25 ±0.5

30CTQ035S ... 30CTQ045S Characteristics Kennwerte Leakage current Sperrstrom Tj = 25°C Tj = 125°C VR = VRRM VR = VRRM IR < 50 µA typ. 15 mA Thermal resistance junction to case Wärmewiderstand Sperrschicht – Gehäuse RthC < 3.25 K/W 1) Maximum Junction Capacitance Maximale Sperrschichtkapazität Cj 900 pF 1)

1 Per diode – Pro Diode

2 http://www.diotec.com/ © Diotec Semiconductor AG [A] IF Forward characteristics (typical values) Durchlasskennlinien (typische Werte) 0 VF 0.4 0.8 [V] 1.4 30CTQ0xx [A] T = 125°Cj T = 25°Cj T = 175°Cj 10-1 [mA] IR

0 VRRM 40 60 80 100 [%]

Typ. instantaneous leakage current vs. rev. voltage Typ. Sperrstrom (Augenblickswert) ü. Sperrspannung T = 25°Cj T = 75°Cj T = 100°Cj T = 125°Cj T = 150°Cj T = 50°Cj T = 175°Cj 120 100 [%] IFAV Rated forward current vs. temp. of the case [°C]TC 150100500