30CTH02PBF_11 VISHAY | Alldatasheet

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Document Number: 94014 For technical ques tions within your region, please contact one of the following: www.vishay.com Revision: 28-Apr-11 DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com 1 This datasheet is subject to change without notice. THE PRODUCT DESCRIBED HEREIN AND THIS DATASHEET ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Hyperfast Rectifier, 2 x 10 A FRED Pt® VS-30CTH02PbF, VS-30CTH02FPPbF Vishay Semiconductors

FEATURES

  • Hyperfast recovery time
  • Low forward voltage drop
  • 175 °C operating junction temperature
  • Low leakage current
  • Fully isolated package (V INS = 2500 VRMS)
  • UL E78996 pending
  • Compliant to RoHS Directive 2002/95/EC
  • AEC-Q101 qualified (TO-220)
  • Designed and qualified for industrial level (TO-220FP) DESCRIPTION/APPLICATIONS

200 V series are the state of the art hyperfast recovery

rectifiers specifically designed with optimized performance of forward voltage drop and hyperfast recovery time. The planar structure and the platinum doped life time control, guarantee the best overall performance, ruggedness and reliability characteristics. These devices are intended for use in the output rectification stage of SMPS, UPS, DC/D C converters as well as freewheeling diode in low voltage inverters and chopper motor drives. Their extremely optimized stored charge and low recovery current minimize the switch ing losses and reduce over dissipation in the switching element and snubbers. PRODUCT SUMMARY Package TO-220AB, TO-220FP IF(AV) 2 x 15 A VR 200 V VF at IF 1.05 V trr typ. See Recovery table TJ max. 175 °C Diode variation Common cathode TO-220AB TO-220 FULL-PAK VS-30CTH02PbF VS-30CTH02FPPbF Anode 1 3 Base common cathode Common cathode Anode Anode 1 3 Common cathode Anode ABSOLUTE MAXIMUM RATINGS PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS Peak repetitive reverse voltage V RRM 200 V Average rectified forward current per diode IF(AV) TC = 159 °C A (FULL-PAK) per diode T C = 125 °C per device 30 Non-repetitive peak surge current I FSM TJ = 25 °C 200 Operating junction and storage temperatures T J, TStg - 65 to 175 °C ELECTRICAL SPECIFICATIONS (TJ = 25 °C unless otherwise specified) PARAMETER SYMBOL TEST CONDITI ONS MIN. TYP. MAX. UNITS Breakdown voltage, blocking voltage V BR, VR IR = 100 μA 200 - - V Forward voltage V F IF = 15 A - 0.92 1.05 IF = 15 A, TJ = 125 °C - 0.78 0.85 Reverse leakage current I R VR = VR rated - - 10 μA TJ = 125 °C, VR = VR rated - 5 300 Junction capacitance C T VR = 200 V - 57 - pF Series inductance L S Measured lead to lead 5 mm from package body - 8 - nH

www.vishay.com For technical qu estions within your region, please contact one of the following: Document Number: 94014 2 DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com Revision: 28-Apr-11 This datasheet is subject to change without notice. THE PRODUCT DESCRIBED HEREIN AND THIS DATASHEET ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VS-30CTH02PbF, VS-30CTH02FPPbF Vishay Semiconductors Hyperfast Rectifier, 2 x 10 A FRED Pt® Fig. 1 - Typical Forward Voltage Drop Characteristics Fig. 2 - Typical Values of Reverse Current vs. Reverse Voltage DYNAMIC RECOVERY CHARACTERISTICS (TC = 25 °C unless otherwise specified) PARAMETER SYMBOL TEST CONDITI ONS MIN. TYP. MAX. UNITS Reverse recovery time t rr IF = 1 A, dIF/dt = 50 A/μs, VR = 30 V - - 35 ns IF = 1 A, dIF/dt = 100 A/μs, VR = 30 V - - 30 TJ = 25 °C IF = 15 A dIF/dt = 200 A/μs VR = 160 V -2 6- TJ = 125 °C - 40 - Peak recovery current I RRM TJ = 25 °C - 2.8 - A Reverse recovery charge Q rr TJ = 25 °C - 37 - nC TJ = 125 °C - 120 - THERMAL - MECHANICAL SPECIFICATIONS PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNITS Maximum junction and storage temperature range T J, TStg - 65 - 175 °C Thermal resistance, junction to case per diode R thJC Mounting surface, flat, smooth and greased -- 1 . 1 °C/W (FULL-PAK) per diode - - 3.5 Marking device Case style TO-220AB 30CTH02 Case style TO-220 FULL-PAK 30CTH02FP TJ = 175 °C TJ = 125 °C TJ = 25 °C 100 IF - Instantaneous Forward Current (A) VF - Forward Voltage Drop (V) 0.01 0.1 100 0 100 200 0.0001 VR - Reverse Voltage (V) IR - Reverse Current (µA) 150 TJ = 175 °C TJ = 150 °C TJ = 125 °C TJ = 100 °C TJ = 25 °C TJ = 50 °C TJ = 75 °C 0.001

VS-30CTH02PbF, VS-30CTH02FPPbF Hyperfast Rectifier, 2 x 10 A FRED Pt® Vishay Semiconductors Document Number: 94014 For technical ques tions within your region, please contact one of the following: www.vishay.com Revision: 28-Apr-11 DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com 3 This datasheet is subject to change without notice. THE PRODUCT DESCRIBED HEREIN AND THIS DATASHEET ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Fig. 3 - Typical Junction Capacitance vs. Reverse Voltage Fig. 4 - Maximum Thermal Impedance ZthJC Characteristics Fig. 5 - Maximum Thermal Impedance ZthJC Characteristics (FULL-PAK) 100 1000 0 50 100 150 200 VR - Reverse Voltage (V) CT - Junction Capacitance (pF) TJ = 25 °C 0.01 0.1 t1 - Rectangular Pulse Duration (s) ZthJC - Thermal Impedance (°C/W) Single pulse (thermal resistance) PDM Notes: 1. Duty factor D = t 1/t2 2. Peak TJ = PDM x ZthJC + TC 11 0 D = 0.50 D = 0.20 D = 0.10 D = 0.05 D = 0.02 D = 0.01 0.01 0.1 t1 - Rectangular Pulse Duration (s) ZthJC - Thermal Impedance (°C/W) Single pulse (thermal resistance) PDM Notes: 1. Duty factor D = t 1/t2 2. Peak TJ = PDM x ZthJC + TC 11 0 D = 0.50 D = 0.20 D = 0.10 D = 0.05 D = 0.02 D = 0.01

www.vishay.com For technical qu estions within your region, please contact one of the following: Document Number: 94014 4 DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com Revision: 28-Apr-11 This datasheet is subject to change without notice. THE PRODUCT DESCRIBED HEREIN AND THIS DATASHEET ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VS-30CTH02PbF, VS-30CTH02FPPbF Vishay Semiconductors Hyperfast Rectifier, 2 x 10 A FRED Pt® Fig. 6 - Maximum Allowable Case Temperature vs. Average Forward Current Fig. 7 - Maximum Allowable Case Temperature vs. Average Forward Current (FULL-PAK) Fig. 8 - Forward Power Loss Characteristics Fig. 9 - Typical Reverse Recovery Time vs. dIF/dt Fig. 10 - Typical Stored Charge vs. dIF/dt Note (1) Formula used: TC = TJ - (Pd + PdREV) x RthJC; Pd = Forward power loss = IF(AV) x VFM at (IF(AV)/D) (see fig. 8); PdREV = Inverse power loss = VR1 x IR (1 - D); IR at VR1 = Rated VR DC 05 2 5 201510 180 170 150 140 IF(AV) - Average Forward Current (A) Allowable Case Temperature (°C) 160 See note (1) Square wave (D = 0.50) Rated V R applied DC 05 2 5 201510 180 170 150 100 110 120 130 140 IF(AV) - Average Forward Current (A) Allowable Case Temperature (°C) 160 See note (1) Square wave (D = 0.50) Rated V R applied D = 0.01 D = 0.02 D = 0.05 D = 0.1 D = 0.2 D = 0.5 0 5 10 15 20 25 Average Power Loss (W) IF(AV) - Average Forward Current (A) RMS limit DC 100 1000 trr (ns) dIF/dt (A/µs) 100 IF = 15 A VR = 160 V TJ = 125 °C TJ = 25 °C 1000 100 1000 Qrr (nC) dIF/dt (A/µs) 100 IF = 15 A VR = 160 V TJ = 125 °C TJ = 25 °C

VS-30CTH02PbF, VS-30CTH02FPPbF Hyperfast Rectifier, 2 x 10 A FRED Pt® Vishay Semiconductors Document Number: 94014 For technical ques tions within your region, please contact one of the following: www.vishay.com Revision: 28-Apr-11 DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com 5 This datasheet is subject to change without notice. THE PRODUCT DESCRIBED HEREIN AND THIS DATASHEET ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Fig. 11 - Reverse Recovery Parameter Test Circuit Fig. 12 - Reverse Recovery Waveform and Definitions IRFP250 D.U.T. L = 70 μH VR = 200 V 0.01 Ω G D S dIF/dt adjust Qrr

0.5 IRRM

dI(rec)M/dt

0.75 IRRM

(1) (2) (3) (4) (5) (1) dIF/dt - rate of change of current through zero crossing (2) IRRM - peak reverse recovery current (3) trr - reverse recovery time measured from zero crossing point of negative going IF to point where a line passing through 0.75 IRRM and 0.50 IRRM extrapolated to zero current. (4) Qrr - area under curve defined by trr and IRRM trr x IRRM 2Qrr = (5) dI(rec)M/dt - peak rate of change of current during tb portion of trr

www.vishay.com For technical qu estions within your region, please contact one of the following: Document Number: 94014 6 DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com Revision: 28-Apr-11 This datasheet is subject to change without notice. THE PRODUCT DESCRIBED HEREIN AND THIS DATASHEET ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VS-30CTH02PbF, VS-30CTH02FPPbF Vishay Semiconductors Hyperfast Rectifier, 2 x 10 A FRED Pt® ORDERING INFORMATION TABLE LINKS TO RELATED DOCUMENTS Dimensions TO-220AB www.vishay.com/doc?95222 TO-220AB FULL-PAK www.vishay.com/doc?95072 Part marking information TO-220AB www.vishay.com/doc?95225 TO-220AB FULL-PAK www.vishay.com/doc?95069 1 - Vishay Semiconductors product 2 - Current rating (30 = 30 A) 3 - C = Common cathode 4 - T = TO-220 5 - H = Hyperfast recovery 6 - Voltage rating (02 = 200 V) 7 - None = TO-220AB FP = TO-220 FULL-PAK - PbF = Lead (Pb)-free8 Tube standard pack quantity: 50 pieces Device code 51 32 4 6 7 8 VS- 30 C T H 02 FP PbF

www.vishay.com Vishay Semiconductors Revision: 20-Jul-11 1 Document Number: 95072 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 DIMENSIONS in millimeters 0.9 0.7 1.15 1.052.54 TYP. 2.54 TYP. 2.8 2.6 1.4 1.3 TYP. 10° 16.4 15.4 16.0 15.8 13.56 13.05 0.61 0.38 2.85 2.65 3.7 3.2 4.8 4.6 3.3 3.1 7.31 6.91 10.6 10.4 Hole Ø 3.4 3.1 (2 places)R 0.7 R 0.5 Lead assignments Diodes 1. - Anode/open 2. - Cathode 3. - Anode Conforms to JEDEC outline TO-220 FULL-PAK

Document Number: 95222 For technical ques tions within your region, please contact one of the following: www.vishay.com Revision: 08-Mar-11 DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com 1 TO-220AB Outline Dimensions Vishay Semiconductors DIMENSIONS in millimeters and inches Notes (1) Dimensioning and tolerancing as per ASME Y14.5M-1994 (2) Lead dimension and finish uncontrolled in L1 (3) Dimension D, D1 and E do not in clude mold flash. Mold flash shall not exceed 0.127 mm (0.005") per side. These dimensions are measured at the outermost extremes of the plastic body (4) Dimension b1, b3 and c1 apply to base metal only (5) Controlling dimensions: inches (6) Thermal pad contour optional within dimensions E, H1, D2 and (7) Dimensions E2 x H1 define a zone where stamping and singulation irregularities are allowed (8) Outline conforms to JEDEC TO-220, except A2 (maximum) and D2 (minimum) where dimensions are derived from the actual package outline D1 8.38 9.02 0.330 0.355  90° to 93° 90° to 93° D2 11.68 12.88 0.460 0.507 6 13 2 D Q 13 2 CC D D 3 x b23 x b (b, b2) b1, b3 (H1) Detail B C A B L Lead tip E Ø P

0.014 ABM M

0.015 A BMM

c AA A Lead assignments Diodes 1. - Anode/open 2. - Cathode 3. - Anode Conforms to JEDEC outline TO-220AB (6) (6) (7) (6) (7) e 2 x L1 (2) Detail B Section C - C and D - D View A - A Base metal Plating (4) (4) c1c (6) Thermal pad (E) E1 (6)

Document Number: 91000 www.vishay.com Revision: 11-Mar-11 1 Disclaimer Legal Disclaimer Notice Vishay ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA AR E SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE. Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectivel y, “Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained in any datasheet or in any other disclosure relating to any product. Vishay makes no warranty, representation or guarantee regarding the suitability of the products for any particular purpose or the continuing production of any product. To the maximum extent permitted by applicable law, Vishay disclaims (i) any and all liability arising out of the application or use of any product, (ii) any and all liability, incl uding without limitation specia l, consequential or incidental dama ges, and (iii) any and all impl ied warranties, including warran ties of fitness for particular purpose, non-infringement and merchantability. Statements regarding the suitability of pro ducts for certain types of applications are based on Vishay’s knowledge of typical requirements that are often placed on Vishay products in gene ric applications. Such statements are not binding statements about the suitability of products for a partic ular application. It is the customer’s responsibility to validate that a particu lar product with the properties described in th e product specification is su itable for use in a particul ar application. Parameters provided in datasheets an d/or specifications may vary in different applications and perfo rmance may vary over time. All operating parameters, including typical pa rameters, must be validated for each customer application by the customer’s technical experts. Product specifications do not expand or otherwise modify Vishay’s term s and conditions of purchase, including but not limited to the warranty expressed therein. Except as expressly indicated in writing, Vishay products are not designed for use in medical, life-saving, or life-sustaining applications or for any other application in which the failure of the Vishay product co uld result in person al injury or death. Customers using or selling Vishay products not expressly indicated for use in such applications do so at their own risk and agree to fully indemnify and hold Vishay and it s distributors harmless from and against an y and all claims, liabilities, expenses and damages arising or resulting in connection with such use or sale, including attorneys fees, even if such claim alleges that Vishay or its distributor was negligent regarding the design or manufacture of the part. Please contact authorized Vishay personnel to obtain written terms and conditions regarding products designed for such applications. No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document or by any conduct of Vishay. Product names and markings noted herein may be trademarks of their respective owners.