30CPU04 THINKISEMI | Alldatasheet

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30Ampere,400Volt Dual Common Cathode Ultrafast Recovery Rectifier Diode Pb

  • Ultrafast Recovery Time
  • Soft Recovery Characteristics
  • Low Recovery Loss
  • Low Forward Voltage
  • High Surge Current Capability
  • Low Leakage Current APPLICATION GENERAL DESCRIPTION Freewheeling, Snubber, Clamp Inversion Welder PFC Plating Power Supply Ultrasonic Cleaner and Welder Converter & Chopper UPS PRODUCT FEATURE 30CPH04 using ThinkiSemi FRED FAB process(planar passivation pellet) with ultrafast and soft recovery characteristics. 30CPU04 © 1995 Thinki Semiconductor Co., Ltd. http://www.thinkisemi.com.tw/ Page 1/5Rev.12T TO-247AC/TO-247ADS-SQ Internal Configuration Cathode(Bottom Side Metal Heatsink) Cathode Anode Anode Backside Base ABSOLUTE MAXIMUM RATINGS PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS Peak repetitive reverse voltage V RRM 400 V Average rectified forward current per leg I F(AV) A total device Rated V R , T C = 149 °C 30 Non-repetitive peak surge current per leg I FSM T C = 25 °C, t p = 10 ms 200 Peak repetitive forward current per leg I FRM Rated V R , T C = 149 °C, square wave, 20 kHz 30 Operating junction and storage temperatures T J , T Stg -65 to +175 °C ELECTRICAL SPECIFICATIONS (T J = 25 °C unless otherwise specified) PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNITS Breakdown voltage, blocking voltage V BR V R I R = 100 μA 400 - - V Forward voltage V F I F = 15 A - 1.17 1.25 I F = 15 A, T J = 150 °C - 0.93 1.12 Reverse leakage current I R V R = V R rated - 0.3 10 μA T J = 150 °C, V R = V R rated - 30 500 Junction capacitance C T V R = 400 V - 28 - pF Series inductance L S Measured lead to lead 5 mm from package body - 12 - nH

© 1995 Thinki Semiconductor Co., Ltd. http://www.thinkisemi.com.tw/ Page 2/5Rev.12T 30CPU04 DYNAMIC RECOVERY CHARACTERISTICS (T J = 25 °C unless otherwise specified) PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNITS Reverse recovery time t rr I F = 1 A, dI F /dt = 50 A/μs, V R = 30 V - 36 60 nsT J = 25 °C I F = 15 A dI F /dt = 200 A/μs V R = 200 V -4 6- T J = 125 °C - 80 - Peak recovery current I RRM T J = 25 °C - 3.6 - A T J = 125 °C - 8.7 - Reverse recovery charge Q rr T J = 25 °C - 84 - nC T J = 125 °C - 345 - THERMAL - MECHANICAL SPECIFICATIONS PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNITS Maximum junction and storage temperature range T J , T Stg -65 - 175 °C Thermal resistance, junction to case per leg R thJC -0 . 8 1 . 5 °C/WThermal resistance, junction to ambient per leg R thJA Typical socket mount - - 40 Thermal resistance, case to heatsink R thCS Mounting surface, flat, smooth and greased -0 . 4- Weight -6 . 0- g -0 . 2 1- o z . Mounting torque 6.0 (5.0) - 12 (10) kgf · cm (lbf · in) Marking device Case style TO-247AC/TO-247ADS-SQ 30CPU04

© 1995 Thinki Semiconductor Co., Ltd. http://www.thinkisemi.com.tw/ Page 3/5Rev.12T 30CPU04 Fig. 1 - Typical Forward Voltage Drop Characteristics Fig. 2 - Typical Values of Reverse Current vs. Reverse Voltage Fig. 3 - Typical Junction Capacitance vs. Reverse Voltage Fig. 4 - Maximum Thermal Impedance Z thJC Characteristics 0.1 100 0.2 0.6 2.0 1.4 1.0 1.8 V F - Forward Voltage Drop (V) I F - Instantaneous Forward Current (A) 1.6 1.2 0.8 T J = 175 °C T J = 150 °C T J = 25 °C 0.4 0.01 0.1 1000 0 100 200 300 400 0.0001 V R - Reverse Voltage (V) I R - Reverse Current (µA) T J = 175 °C T J = 150 °C T J = 125 °C T J = 100 °C T J = 25 °C 0.001 100 100 1000 0 100 200 300 400 V R - Reverse Voltage (V) C T - Junction Capacitance (pF) T J = 25 °C 0.01 0.1 t - Rectangular Pulse Duration (s) Z thJC - Thermal Impedance (°C/W) Single pulse (thermal resistance) P DM t t Notes: 1. Duty factor D = t 2. Peak T J = P DM x Z thJC + T C 100 1 1 0 D = 0.50 D = 0.20 D = 0.10 D = 0.05 D = 0.02 D = 0.01

© 1995 Thinki Semiconductor Co., Ltd. http://www.thinkisemi.com.tw/ Page 4/5Rev.12T 30CPU04 Fig. 5 - Maximum Allowable Case Temperature vs. Average Forward Current Fig. 6 - Forward Power Loss Characteristics Fig. 7 - Typical Reverse Recovery Time vs. dI F /dt Fig. 8 - Typical Stored Charge vs. dI F /dt Note (1) Formula used: T C = T J - (Pd + Pd REV ) x R thJC Pd = forward power loss = I F(AV) x V FM at (I F(AV) /D) (see fig. 6); Pd REV = inverse power loss = V x I R (1 - D); I R at V = rated V R See note (1) Square wave (D = 0.50) Rated V R applied DC 05 2 5 180 170 150 140 130 I F(AV) - Average Forward Current (A) Allowable Case Temperature (°C) 160 D = 0.01 D = 0.02 D = 0.05 D = 0.1 D = 0.2 D = 0.5 05 2 5 I F(AV) - Average Forward Current (A) Average Power Loss (W) RMS limit DC I F = 30 A I F = 16 A I F = 8 A 100 100 1000 t rr (ns) dI F /dt (A/µs) V R = 200 V T J = 125 °C T J = 25 °C I F = 30 A I F = 16 A I F = 8 A 1000 100 1000 Q rr (nC) dI F /dt (A/µs) 100 V R = 200 V T J = 125 °C T J = 25 °C Fig. 9 - Reverse Recovery Waveform and Definitions Q rr 0.5 I RRM di (rec)M /dt 0.75 I RRM I RRM t rr t b t a I F di F /dt (1) (2) (3) (4) (5) (1) di F /dt - rate of change of current through zero cro ss ing (2) I RRM - peak rever s e recovery current (3) t rr - rever s e recovery time mea s ured from zero cro ss ing point of negative going I F to point where a line pa ss ing through 0.75 I RRM and 0.50 I RRM extrapolated to zero current. (4) Q rr - area under curve defined by t rr and I RRM t rr x I RRM Q rr (5) di (rec)M /dt - peak rate of change of current during t b portion of t rr

© 1995 Thinki Semiconductor Co., Ltd. http://www.thinkisemi.com.tw/ Page 5/5Rev.12T THINKI TO-247AC/TO-247ADS-SQ package outline E ØP D e b A e A b D 5.00 2.50 1.20 3.10 2.10 6.00 5.10 20.00 3.60 0.50 e E ØP 5.50 5.44 15.60 14.60 4.00 4.80 5.20 2.30 2.70 1.10 1.30 2.90 3.30 1.90 2.30 5.50 6.50 4.95 5.25 19.00 21.00 5.30 5.70 5.34 5.54 15.40 15.80 14.40 14.80 3.85 4.15 0.35 0.65 3.40 3.80 MIN NOM MAX MILLIMETER SYMBOL 30CPU04