30CPH03 THINKISEMI | Alldatasheet

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30Ampere,300Volt Dual Common Cathode Hyperfast Recovery Rectifier Diode Pb

  • Ultrafast Recovery Time
  • Soft Recovery Characteristics
  • Low Recovery Loss
  • Low Forward Voltage
  • High Surge Current Capability
  • Low Leakage Current APPLICATION GENERAL DESCRIPTION Freewheeling, Snubber, Clamp Inversion Welder PFC Plating Power Supply Ultrasonic Cleaner and Welder Converter & Chopper UPS PRODUCT FEATURE 30CPH03 using ThinkiSemi FRED FAB process(planar passivation pellet) with hyperfast and soft recovery characteristics. 30CPH03 © 1995 Thinki Semiconductor Co., Ltd. http://www.thinkisemi.com.tw/ Page 1/5Rev.12T TO-247AC/TO-247ADS-SQ Internal Configuration Cathode(Bottom Side Metal Heatsink) Cathode Anode Anode ABSOLUTE MAXIMUM RATINGS PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS Repetitive peak reverse voltage V RRM 300 V Average rectified forward current per leg I F(AV) T C = 142 °C Atotal device 30 Non-repetitive peak surge current per leg I FSM T J = 25 °C, t p = 10 ms 140 Operating junction and storage temperatures T J , T Stg -65 to +175 °C ELECTRICAL SPECIFICATIONS (T J = 25 °C unless otherwise specified) PARAMETER SYMBOL TEST CONDITI ONS MIN. TYP. MAX. UNITS Breakdown voltage, blocking voltage V BR V R I R = 100 μA 300 - - V Forward voltage V F I F = 15 A - 1.05 1.25 I F = 15 A, T J = 125 °C - 0.85 1.00 Reverse leakage current I R V R = V R rated - 0.05 40 μA T J = 125 °C, V R = V R rated - 12 400 Junction capacitance C T V R = 300 V - 45 - pF Series inductance L S Measured lead to lead 5 mm from package body - 8 - nH Backside Base

© 1995 Thinki Semiconductor Co., Ltd. http://www.thinkisemi.com.tw/ Page 2/5Rev.12T DYNAMIC RECOVERY CHARACTERISTICS (T J = 25 °C unless otherwise specified) PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNITS Reverse recovery time t rr I F = 1.0 A, dI F /dt = 50 A/μs, V R = 30 V - - 40 nsT J = 25 °C I F = 15 A dI F /dt = - 200 A/μs V R = 200 V -3 2- T J = 125 °C - 45 - Peak recovery current I RRM T J = 25 °C - 2.4 - A T J = 125 °C - 6.1 - Reverse recovery charge Q rr T J = 25 °C - 38 - nC T J = 125 °C - 137 - THERMAL - MECHANICAL SPECIFICATIONS PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNITS Maximum junction and storage temperature range T J , T Stg -65 - 175 °C Thermal resistance, junction to case per leg R thJC -0 . 9 2 . 0 °C/WThermal resistance, junction to ambient per leg R thJA Typical socket mount - - 40 Thermal resistance,  case to heatsink R thCS Mounting surface, flat, smooth, and greased -0 . 4- Weight -6 . 0- g -0 . 2 1- o z . Mounting torque 6.0 (5.0) - 12 (10) kgf · cm (lbf ·in) Marking device Case style TO-247AC/TO-247ADS-SQ 30CPH03

© 1995 Thinki Semiconductor Co., Ltd. http://www.thinkisemi.com.tw/ Page 3/5Rev.12T Fig. 1 - Typical Forward Voltage Drop Characteristics Fig. 2 - Typical Values of Reverse Current vs. Reverse Voltage Fig. 3 - Typical Junction Capacitance vs. Reverse Voltage Fig. 4 - Maximum Thermal Impedance Z thJC Characteristics 100 I F - Instantaneous Forward Current (A) V F - Forward Voltage Drop (V) T J = 175 °C T J = 125 °C T J = 25 °C 0 50 100 150 200 250 300 I R - Reverse Current (µA) V R - Reverse Voltage (V) 0.001 0.01 0.1 1000 100 T J = 175 °C T J = 150 °C T J = 100 °C T J = 125 °C T J = 25 °C 1000 100 0 50 100 150 200 250 300 C T - Junction Capacitance (pF) V R - Reverse Voltage (V) T J = 25 °C 0.01 0.1 t - Rectangular Pulse Duration (s) Z thJC - Thermal Impedance (°C/W) P DM t t Notes: 1. Duty factor D = t 2. Peak T J = P DM x Z thJC + T C Single pulse (thermal resistance) D = 0.50 D = 0.20 D = 0.10 D = 0.05 D = 0.02 D = 0.01

© 1995 Thinki Semiconductor Co., Ltd. http://www.thinkisemi.com.tw/ Page 4/5Rev.12T Fig. 5 - Maximum Allowable Case Temperature vs. Average Forward Current Fig. 6 - Forward Power Loss Characteristics Fig. 7 - Typical Reverse Recovery Time vs. dI F /dt Fig. 8 - Typical Stored Charge vs. dI F /dt Note (1) Formula used: T C = T J - (Pd + Pd REV ) x R thJC Pd = forward power loss = I F(AV) x V FM at (I F(AV) /D) (see fig. 6); Pd REV = inverse power loss = V x I R (1 - D); I R at V = rated V R 0 5 10 15 20 25 Allowable Case Temperature (°C) I F(AV) - Average Forward Current (A) 120 130 140 150 160 170 180 See note (1) Square wave (D = 0.50) Rated V R applied DC 0 5 10 15 20 25 Average Power Loss (W) I F(AV) - Average Forward Current (A) D = 0.01 D = 0.02 D = 0.05 D = 0.10 D = 0.20 D = 0.50 RMS limit DC 100 1000 t rr (ns) dI F /dt (A/µs) 100 I F = 30 A , T J = 25 °C I F = 30 A , T J = 125 °C 1000 100 1000 Q rr (nC) dI F /dt (A/µs) 100 I F = 30 A , T J = 25 °C I F = 30 A , T J = 125 °C Fig. 9 - Reverse Recovery Waveform and Definitions Q rr 0.5 I RRM di (rec)M /dt 0.75 I RRM I RRM t rr t b t a I F di F /dt (1) (2) (3) (4) (5) (1) di F /dt - rate of change of current through zero cro ss ing (2) I RRM - peak rever s e recovery current (3) t rr - rever s e recovery time mea s ured from zero cro ss ing point of negative going I F to point where a line pa ss ing through 0.75 I RRM and 0.50 I RRM extrapolated to zero current. (4) Q rr - area under curve defined by t rr and I RRM t rr x I RRM Q rr (5) di (rec)M /dt - peak rate of change of current during t b portion of t rr

© 1995 Thinki Semiconductor Co., Ltd. http://www.thinkisemi.com.tw/ Page 5/5Rev.12T THINKI TO-247AC/TO-247ADS-SQ package outline E ØP D e b A e A b D 5.00 2.50 1.20 3.10 2.10 6.00 5.10 20.00 3.60 0.50 e E ØP 5.50 5.44 15.60 14.60 4.00 4.80 5.20 2.30 2.70 1.10 1.30 2.90 3.30 1.90 2.30 5.50 6.50 4.95 5.25 19.00 21.00 5.30 5.70 5.34 5.54 15.40 15.80 14.40 14.80 3.85 4.15 0.35 0.65 3.40 3.80 MIN NOM MAX MILLIMETER SYMBOL