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Technical content

Features

  • Large current capacity
  • Low collector-to-emitter saturation voltage (resistance)) : R CE(sat) typ=330mΩ [IC=0.7A, IB=35mA]
  • Ultrasmall package facilitates miniaturization in end products
  • Small ON-resistance (Ron)
  • Halogen free compliance Specifi cations Absolute Maximum Ratings at Ta=25°C Parameter Symbol Conditions Ratings Unit Collector-to-Base Voltage V CBO 40 V Collector-to-Emitter Voltage V CEO 30 V Emitter-to-Base Voltage V EBO 5V Collector Current I C 700 mA Collector Current (Pulse) I CP 1.4 A Collector Dissipation P C When mounted on ceramic substrate (600mm ×0.8mm) 600 mW Junction Temperature Tj 150 °C Storage Temperature Tstg -55 to +150 °C Package Dimensions unit : mm (typ) 7019A-004 Product & Package Information
  • Package : MCPH3
  • JEITA, JEDEC : SC-70, SOT-323
  • Minimum Packing Quantity : 3,000 pcs./reel Packing Type : TL Marking Electrical Connection 1 : Base 2 : Emitter 3 : Collector MCPH3 0.250.250.07 2.1 1.6 2.0 0.65 0.3 0.85 0.15 0 to 0.02 TL 30C02MH-TL-E 30C02MH-TL-H CL LOT No. LOT No.

No.7364-2/6 500 400 300 700 600 200 200 100 300 400 200 800 700 600 500 100 500 1000 800 900100 300 400 600 700 IC -- VCE IT05082 IC -- VBE IT05083 IB=0A 200μA 400μA 1mA 2mA 3mA 5mA 7mA10mA 50mA 15mA 30mA 20mA Ta=75 --25 VCE=2V Collector-to-Emitter V oltage, VCE -- mV Collector Current, IC -- mA Base-to-Emitter V oltage, VBE -- V Collector Current, IC -- mA Electrical Characteristics at Ta=25°C Parameter Symbol Conditions Ratings Unit min typ max Collector Cutoff Current I CBO VCB=30V, IE=0A 100 nA Emitter Cutoff Current I EBO VEB=4V, IC=0A 100 nA DC Current Gain h FE VCE=2V, IC=50mA 300 800 Gain-Bandwidth Product f T VCE=10V, IC=50mA 540 MHz Output Capacitance Cob V CB=10V, f=1MHz 3.3 pF Collector-to-Emitter Saturation Voltage V CE(sat) I C=200mA, IB=10mA 85 190 mV Base-to-Emitter Saturation Voltage V BE(sat) I C=200mA, IB=10mA 0.9 1.2 V Collector-to-Base Breakdown Voltage V (BR)CBO IC=10μA, IE=0A 40 V Collector-to-Emitter Breakdown Voltage V (BR)CEO IC=1mA, RBE=∞ 30 V Emitter-to-Base Breakdown Voltage V (BR)EBO IE=10μA, IC=0A 5 V Turn-ON Time t on See specifi ed Test Circuit. 35 ns Storage Time t stg 255 ns Fall Time t f 40 ns Switching Time Test Circuit

Ordering Information

Device Package Shipping memo 30C02MH-TL-E MCPH3 3,000pcs./reel Pb Free 30C02MH-TL-H MCPH3 3,000pcs./reel Pb Free and Halogen Free VR RB VCC=12VVBE= --5V + + 50Ω INPUT OUTPUT RL 220μF 470 μF PW=20μs IB1 D.C. ≤1% IB2 IC=20IB1= --20IB2=300mA

No.7364-3/6 IT05089 fT -- IC 100 1000 101.0 10023 5 723 5 7 100023 5 7 VCE=10V Cob -- VCB IT05088 1.0 1.0 10 23 5 23 5 7 f=1MHz VCE(sat) -- IC VBE(sat) -- IC IT05086 IT05087 100 1000 1.0 23 5 10 100 10007 23 5 7 23 5 7 1.0 0.1 1.0 23 5 10 100 10007 23 5 7 23 5 7 IC / IB=50 IC / IB=20 25°C --25°CTa=75 °C 75°C Ta=--25°C 25°C Collector Current, IC -- mA Output Capacitance, Cob -- pF Collector-to-Base V oltage, VCB -- V Gain-Bandwidth Product, fT -- MHz Collector-to-Emitter Saturation V oltage, VCE(sat) -- mV Collector Current, IC -- mA Collector Current, I C -- mA Base-to-Emitter Saturation V oltage, VBE(sat) -- V PC -- Ta IT05092 700 500 600 400 200 300 100 0 20 40 60 80 100 120 140 160 Collector Dissipation, PC -- mW Ambient Temperature, Ta -- °CBase Current, IB -- mA Ron -- IB ON Resistance, Ron -- Ω f=1MHz 0.1 0.1 IT06793 1.0 32 57 32 571.0 10 OUTIN 1kΩ 1kΩ IB 1.0 10 100 100032 57 3 2 57 3 2 57 1000 100 hFE -- IC IT05084 VCE(sat) -- IC IT05085 Ta=75°C --25°C 25°C VCE=2V 1.0 100 1000 1.0 23 5 10 100 10007 23 5 7 23 5 7 25°C --25 °CTa=75 IC / IB=20 Collector Current, IC -- mA DC Current Gain, hFE Collector Current, IC -- mA Collector-to-Emitter Saturation V oltage, VCE(sat) -- mV When mounted on ceramic substrate (600mm2×0.8mm)

No.7364-4/6 Embossed Taping Specifi cation 30C02MH-TL-E, 30C02MH-TL-H

No.7364-5/6 Outline Drawing Land Pattern Example 30C02MH-TL-E, 30C02MH-TL-H Mass (g) Unit 0.007 * For reference mm Unit: mm 0.65 0.65 0.4 2.1 0.6

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