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Document overview

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Technical content

Features

  • Large current capacity
  • Low collector-to-emitter saturation voltage (resistance) RCE(sat) typ=580m Ω[IC=0.7A, IB=35mA]
  • Small ON-resistance (Ron) Specifi cations Absolute Maximum Ratings at Ta=25°C Parameter Symbol Conditions Ratings Unit Collector-to-Base Voltage V CBO - -30 V Collector-to-Emitter Voltage V CEO - -30 V Emitter-to-Base Voltage V EBO -- 5 V Collector Current I C - -700 mA Collector Current (Pulse) I CP - -1.4 A Collector Dissipation P C When mounted on ceramic substrate (600mm ×0.8mm) 600 mW Junction Temperature Tj 150 °C Storage Temperature Tstg - -55 to +150 °C Package Dimensions unit : mm (typ) 7019A-004 Product & Package Information
  • Package : MCPH3
  • JEITA, JEDEC : SC-70, SOT-323
  • Minimum Packing Quantity : 3,000 pcs./reel Packing Type : TL Marking Electrical Connection 1 : Base 2 : Emitter 3 : Collector MCPH3 0.250.250.07 2.1 1.6 2.0 0.65 0.3 0.85 0.15 0 to 0.02 TL 30A02MH-TL-E 30A02MH-TL-H AL LOT No. LOT No.

No.7359-2/6 Electrical Characteristics at Ta=25°C Parameter Symbol Conditions Ratings Unit min typ max Collector Cutoff Current I CBO VCB= - -30V, IE=0A - -100 nA Emitter Cutoff Current I EBO VEB= - -4V, IC=0A - -100 nA DC Current Gain h FE VCE= - -2V, IC= - -10mA 200 500 Gain-Bandwidth Product f T VCE= - -10V, IC= - -50mA 520 MHz Output Capacitance Cob V CB= - -10V, f=1MHz 4.7 pF Collector-to-Emitter Saturation Voltage V CE(sat) I C= - -200mA, IB= - -10mA - -110 - -220 mV Base-to-Emitter Saturation Voltage V BE(sat) I C= - -200mA, IB= - -10mA - -0.9 - -1.2 V Collector-to-Base Breakdown Voltage V (BR)CBO IC= - -10μA, IE=0A - -30 V Collector-to-Emitter Breakdown Voltage V (BR)CEO IC= - -1mA, RBE=∞ - -30 V Emitter-to-Base Breakdown Voltage V (BR)EBO IE= - -10μA, IC=0A - -5 V Turn-ON Time t on See specifi ed Test Circuit. 35 ns Storage Time t stg 125 ns Fall Time t f 25 ns Switching Time Test Circuit

Ordering Information

Device Package Shipping memo 30A02MH-TL-E MCPH3 3,000pcs./reel Pb Free 30A02MH-TL-H MCPH3 3,000pcs./reel Pb Free and Halogen Free VR RB VCC= --12VVBE=5V + +50Ω INPUT OUTPUT RL 220μF 470 μF PW=20μs IB1 D.C.≤1% IB2 IC=20IB1= --20IB2= --300mA --200 --100 IC -- VCE IT05049 IT05050 --400 --300 --600 --500 --700 IC -- VBE --200 --800 --500 --700 --400 --300 --600 --100 IB=0 Ta=75 --25 --500μA --1mA --2mA --5mA --3mA --7mA --10mA --15mA--40mA --50mA --30mA --20mA--25mA VCE= --2V Collector-to-Emitter V oltage, VCE -- mV Collector Current, IC -- mA Base-to-Emitter V oltage, VBE -- V Collector Current, IC -- mA

No.7359-3/6 IT05053 --1.0 0.1 Cob -- VCB --102 3 5 7 2 3 5 f=1MHz IT05055 VCE(sat) -- IC --1.0 23 5 7 --10 23 5 7 23 5 7 --100 --1000 IT05056 VBE(sat) -- IC --1.0 --10 --0.1 Ta= --25°C 75°C 25°C --1.0 23 5 7 --10 23 5 7 23 5 7 --100 --1000 --10 --1000 --100 Ta=75 --25°C 25°C 100 200 PC -- Ta IT05046 300 600 400 500 700 4020 100 12060 80 140 160 IT05052 --1.0 fT -- IC 23 5 7 23 5 7 23 5 7--10 --100 --1000 100 1000 VCE= --10V IC / IB=50 IC / IB=20 Collector Current, IC -- mA Gain-Bandwidth Product, fT -- MHz Collector-to-Base V oltage, VCB -- V Output Capacitance, Cob -- pF Collector Dissipation, PC -- mW Ambient Temperature, Ta -- °C Mounted on a ceramic board(600mm 2✕0.8mm) Collector Current, IC -- mA Collector-to-Emitter Saturation V oltage, VCE(sat) -- mV Collector Current, IC -- mA Base-to-Emitter Saturation V oltage, VBE(sat) -- V f=1MHz --0.1 0.1 Base Current, IB -- mA Ron -- IB ON Resistance, Ron -- Ω IT06403 1.0 100 32 57 32 57--1.0 --10 OUTIN 1kΩ 1kΩ IB IT05051 100 hFE -- IC --1.0 2 3 5 7 --10 2 3 5 7 2 3 5 7--100 --1000 1000 VCE= --2V Ta=75°C 25°C --25°C IT05054 --1.0 VCE(sat) -- IC 23 5 7 --10 23 5 7 23 5 7 --100 --1000 --1000 --100 --10 Ta=75 --25 25°C IC / IB=20 Collector Current, IC -- mA DC Current Gain, hFE Collector Current, IC -- mA Collector-to-Emitter Saturation V oltage, VCE(sat) -- mV

No.7359-4/6 Embossed Taping Specifi cation 30A02MH-TL-E, 30A02MH-TL-H

No.7359-5/6 Outline Drawing Land Pattern Example 30A02MH-TL-E, 30A02MH-TL-H Mass (g) Unit 0.007 * For reference mm Unit: mm 0.65 0.65 0.4 2.1 0.6

PS No.7359-6/6 ON Semiconductor and the ON logo are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of SCILLC’s product/patent covera ge may be accessed at warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation sp ecial, consequential or incidental damages. “Typical” parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different ap plications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. SCILLC does not convey any license under its patent rights nor the rights of others. SCILLC products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life , or for any other application in which the failure of the SCILLC product could create a situation where personal injury or death may occur. Should Buyer purchase or use SCILLC products for any such unintended or unauthorized application, Buyer shall indemnify and hold SCILLC and its officers, employees, subsidiarie s, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that SCILLC was negligent regarding the design or manufacture of the part. SCILLC is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner.