3090K FUMAN | Alldatasheet
Document overview
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- PDF pages: 5
Technical content
Features
- VDS = 30V,ID =86A RDS(ON) <5 mΩ @ VGS =10V RDS(ON) <9.5mΩ @ VGS =4.5V
- High Power and current handing capability
- Lead free productisacquired
- Surface Mount Package Application
- PWMapplications
- Load switch
- Power management 100% UIS TESTED! 100% ΔVds TESTED! Schematic Diagram Marking and pinAssignment TO-252(DPAK)topview Package Marking and OrderingInformation DeviceMarking Device Device Package ReelSize Tapewidth Quantity 3090K 3090K TO-252 325mm 16mm 2500 Table1. AbsoluteMaximumRatings(TA=25℃) Symbol Parameter Value Unit VDS Drain-Source Voltage(VGS=0V） 30 V VGS Gate-Source Voltage(VDS=0V) ±20 V ID Drain Current-Continuous(Tc=25℃)(Note1) 90 A Drain Current-Continuous(Tc=100℃) 60 A IDM(pluse) Drain Current-Continuous@ Current-Pulsed (Note2) 344 A PD Maximum Power Dissipation(Tc=25℃) 84 W Maximum Power Dissipation(Tc=100℃) 42 W EAS Avalancheenergy(Note 3) 270 mJ TJ,TSTG Operating Junction and Storage Temperature Range -55 To175 ℃ Table2. ThermalCharacteristic Symbol Parameter Typ Max Unit RJC Thermal Resistance,Junction-to-Case - 1.8 ℃/W 3090K
深圳市富满电子集团股份有限公司 SHEN ZHEN FINE MADE ELECTRONICS GROUP CO., LTD. 3090K(文件编号：S&CIC1688) N-ChannelTrenchPowerMOSFET www.superchip.cn Version1.0第2 页共5 页 Table3. ElectricalCharacteristics(TA=25℃unlessotherwisenoted) Symbol Parameter Conditions Min Typ Max Unit On/OffStates BVDSS Drain-Source Breakdown Voltage VGS=0V ID=250μA 30 V IDSS Zero Gate Voltage Drain Current VDS=30V,VGS=0V 1 μA IGSS Gate-Body Leakage Current VGS=±20V,VDS=0V ±100 nA VGS(th) Gate Threshold Voltage VDS=VGS,ID=250μA 1.0 1.5 2.5 V gFS Forward Transconductance VDS=5V,ID=15A 20 S RDS(ON) Drain-Source On-State Resistance VGS=10V, ID=20A 4.0 5 mΩ VGS=4.5V, ID=20A 5.8 9.5 mΩ Dynamic Characteristics Ciss Input Capacitance VDS=15V,VGS=0V, f=1.0MHz 1980 pF Coss Output Capacitance 320 pF Crss Reverse Transfer Capacitance 240 pF Rg Gate resistance VGS=0V, VDS=0V,f=1.0MHz 3.2 Ω SwitchingTimes td(on) Turn-on Delay Time VGS=10V,VDS=15V, RL=0.75,RGEN=3 12 nS tr Turn-on Rise Time 36 nS td(off) Turn-Off Delay Time 49 nS tf Turn-Off Fall Time 12 nS Qg Total Gate Charge VGS=10V, VDS=25V,ID=14A 45 nC Qgs Gate-Source Charge 3 nC Qgd Gate-Drain Charge 15 nC Source-DrainDiode Characteristics ISD Source-Drain Current(Body Diode) 90 A VSD Forward on Voltage VGS=0V,IS=20A 1.2 V trr Body Diode Reverse Recovery Time IF=20A,dI/dt=100A/s 15 ns Qrr Body Diode Reverse Recovery Charge IF=20A,dI/dt=100A/s 4 nC Notes1.The maximum currentrating ispackagelimited. Notes2.RepetitiveRating:Pulsewidthlimited bymaximumjunction temperatureNotes3.EAScondition:TJ=25℃,VDD=30V,VG=10V, RG=25Ω
深圳市富满电子集团股份有限公司 SHEN ZHEN FINE MADE ELECTRONICS GROUP CO., LTD. 3090K(文件编号：S&CIC1688) N-ChannelTrenchPowerMOSFET www.superchip.cn Version1.0第3 页共5 页 TestCircuit 1) EAS Test Circuits 2) Gate Charge Test Circuit: 3) Switch Time Test Circuit：
深圳市富满电子集团股份有限公司 SHEN ZHEN FINE MADE ELECTRONICS GROUP CO., LTD. 3090K(文件编号：S&CIC1688) N-ChannelTrenchPowerMOSFET www.superchip.cn Version1.0第5 页共5 页 TO-252PackageInformation.