307U160 THINKISEMI | Alldatasheet

Document overview

  • Manufacturer or author: Provided By ALLDATASHEET.COM(FREE DATASHEET DOWNLOAD SITE)
  • PDF pages: 7

Technical content

Features

High voltage ratings up to 2500V High surge current capabilities Stud cathode and stud anode version Typical Applications Converters Power supplies Machine tool controls High power drives Medium traction applications 307U80/307U120/307U160/307U200/307U250 80 to 200 250 Parameters Units I F(AV) 330 300 A @ T C 120 120 °C I F(RMS) 520 470 A I FSM 50Hz 8250 6050 A @ 60Hz 8640 6335 A I 50Hz 340 183 KA s @ 60Hz 311 167 KA s V RRM range 800 to 2000 2500 V T J - 40 to 180 - 40 to 180 °C Major Ratings and Characteristics 307UR80/307UR120/307UR160/307UR200/307UR250 CERAMIC HOUSING 19 (0.75) MAX. 21 (0.83) MAX. 54 (2.13) MAX. 11 (0 .43) NOM. 140 (5.51) 148 (5.83) DIA. 8.5 (0.33 32 (1.26) 3.9 (0.15) 12 (0.47) MIN. 3/4"-16UNF-2A All dimensions in millimeters (inches)

Parameter Units Conditions I F(AV) Max. average forward current 330 300 A 180° conduction, half sine wave @ Case temperature 120 120 °C I F(RMS) Max. RMS forward current 520 470 A DC @ T C = 115°C (08 to 20), T C = 102°C (25) I FSM Max. peak, one-cycle forward, 8250 6050 t = 10ms No voltage non-repetitive surge current 8640 6335 t = 8.3ms reapplied 6940 5090 t = 10ms 100% V RRM 7270 5330 t = 8.3ms reapplied Sinusoidal half wave, I t Maximum I J = T J max. 311 167 t = 8.3ms reapplied 241 129 t = 10ms 100% V RRM 220 118 t = 8.3ms reapplied I √t Maximum I √t for fusing 3400 1830 KA √s t = 0.1 to 10ms, no voltage reapplied V F(TO)1 Low level value of threshold voltage V F(TO)2 High level value of threshold voltage r f Low level value of forward slope resistance r f High level value of forward slope resistance V FM Max. forward voltage drop 1.22 1.46 V I pk = 942A, T J = T J max, t p = 10ms sinusoidal wave Voltage V RRM , maximum repetitive V RSM , maximum non- I RRM max. Type number Code peak reverse voltage repetitive peak rev. voltage @ T J = T J max. VV m A 80 800 900 120 1200 1300 200 2000 2100 250 2500 2600 ELECTRICAL SPECIFICATIONS Voltage Ratings 0.49 0.55 (I > π x I F(AV) ),T J = T J max. 0.49 0.59 (16.7% x π x I F(AV) < I < π x I F(AV) ), T J = T J max. m Ω 0.84 0.97 (I > π x I F(AV) ),T J = T J max. 0.77 0.90 (16.7% x π x I F(AV) < I < π x I F(AV) ), T J = T J max. V KA s A Forward Conduction 307U(R) 80 to 200 250 307U160/307UR160 160 1600 1700 15 307U200/307UR200 307U250/307UR250 307U120/307UR120 307U80/307UR80 © 1995 Thinki Semiconductor Co., Ltd. http://www.thinkisemi.com.tw/ Page 2/7Rev.12T t for fusing 340 183 t = 10ms No voltage Initial T

Δ R thJC Conduction (The following table shows the increment of thermal resistence R thJC when devices operate at different conduction angles than DC) 80 to 200 250 00 to 200 250 180° 0.015 0.015 0.011 0.011 120° 0.018 0.018 0.019 0.019 90° 0.023 0.023 0.025 0.025 K/W T J = T J max. 60° 0.034 0.034 0.035 0.035 30° 0.056 0.056 0.057 0.057 Sinusoidal conduction Rectangular conduction Conduction angle Units Conditions T J Max. junction operating temperature range-40 to 180 T stg Max. storage temperature range -40 to 200 R thJC Max. thermal resistance, junction to case0.14 DC operation R thCS Max. thermal resistance, case to heatsink0.08 Mounting surface, smooth, flat and greased T Max. allowed mounting torque +0 -20% 37 Not lubricated threads

28 Lubricated threads

Case style DO-205AB (DO-9) See Outline Table Units Conditions Thermal and Mechanical Specifications K/W Nm Ordering Information Table 30 1 U A 250 P5 2 3 Device Code 1 - 30 = Essential Part Number 2 - 1 = Standard Device 3 = Top Threaded version 5 = Type for rotating application with Top Threaded version 3/8 16UNC-2A 7 = Type for rotating application with flexible lead 9 = Type for rotating application with Top Threaded version 3/8 24UNF 3 - U = Stud Normal Polarity (Cathode to Stud) UR = Stud Reverse Polarity (Anode to Stud) 4 - A = Max. Leakage selection I RRM = 2mA T J = 25°C None = Std. Leakage selection I RRM = 10mA T J = 25°C 5 - Voltage code: Code x 10=V RRM (See Voltage Ratings table) 6 - P. = Forward selection None = Standard Forward selection I FM V FM V FM RANGE T J = 25°C min. max. (A) (V) (V) P2 * 1.16 1.25 P3 * 1.26 1.30 P4 1.31 1.40 P5 1.41 1.45 1000 * 2500V not available © 1995 Thinki Semiconductor Co., Ltd. http://www.thinkisemi.com.tw/ Page 3/7Rev.12T Parameter 307U(R) 301U(R) 250 ± 5 303U(R) 152 ± 5 305U(R) 177 ± 5g 307U(R) 197 ± 5 309U(R) 160 ± 5

Fig. 1 - Current Ratings Characteristics Fig.2 - Current Ratings Characteristics 110 120 130 140 150 160 170 180 0 50 100 150 200 250 300 350 30° 60° 90° 120° 180° Average F orward Current (A) Conduction Angle Maximum Allowable Case Temperature (°C) R (DC) = 0.14 K / W 307U(R) Series (800V to 2000V) thJC 100 110 120 130 140 150 160 170 180 0 100 200 300 400 500 600 30° 60° 90° 180° DC 120° Average F orward Current (A) Conduction P eriod Maximum Allowable Cas e T emperature (°C) R (DC) = 0.14 K/ W thJC 307U(R) Series (800V to 2000V) Fig. 5 - Forward Power Loss Characteristics Fig. 3 - Current Ratings Characteristics Fig. 4 - Current Ratings Characteristics 110 120 130 140 150 160 170 180 0 50 100 150 200 250 300 350 30° 60° 90° 120° 180° Average F orward Current (A) Conduction Angle Maximum Allowable Cas e Temperature (°C) 307U(R) Series (2500V) R (DC) = 0.14 K / W thJC 100 110 120 130 140 150 160 170 180 0 100 200 300 400 500 30° 60° 90° 180° DC 120° Average F orward Current (A) Conduction Period Maximum Allowable Cas e T emperature (°C) 307U(R) Series (2500V) R (DC) = 0.14 K/ W thJC 20 40 60 80 100 120 140 160 180 Maximum Allowable Ambient T emperature (°C) R = 0.1 K/W - Delta R thSA 0. 2 K/W

0.3 K/W

1.5 K/W

3 K/W

0.7 K/W

0 50 100 150 200 250 300 350 180° 120° 90° 60° 30° RM S Li m it Conduction Angle Max imum Average F orward P ower L os s (W ) Average F orward Current (A) 307U(R) Series (800V to 2000V) T = 180°C J © 1995 Thinki Semiconductor Co., Ltd. http://www.thinkisemi.com.tw/ Page 4/7Rev.12T

Fig. 6 - Forward Power Loss Characteristics 20 40 60 80 100 120 140 160 180 Maximum Allowable Ambient T emperature (°C) R = 0.1 K/W - Delta R thSA

0.2 K/W

180° 120° 90° 60° 30° RM S Lim it Conduction Period Maximum Average F orward P ower L os s (W) Average F orward Current (A) 307U(R) Series (800V to 2000V) T = 180°C J 20 40 60 80 100 120 140 160 180 Max imum Allowable Ambient T emperature (°C) R = 0.1 K/W - Delta R thSA 180° 120° 90° 60° 30° RM S Li mi t Conduction Angle Maximum Average F orwar d P ower L os s (W ) Average F orward Current (A) T = 180°C 307U(R) Series (2500V) J Fig. 7 - Forward Power Loss Characteristics Fig. 8 - Forward Power Loss Characteristics 20 40 60 80 100 120 140 160 180 Maximum Allowable Ambient T emperature (°C) R = 0.1 K/W - Delta R thSA 180° 120° 90° 60° 30° RM S Lim it Conduction Period Maximum Average F orward P ower L os s (W) Average F orward Current (A) T = 180°C 307U(R) Series (2500V) J © 1995 Thinki Semiconductor Co., Ltd. http://www.thinkisemi.com.tw/ Page 5/7Rev.12T

Number Of E qual Amplitude Half Cycle Current P ulses (N) P eak H alf Sine Wave Forward Current (A) Init ial T = 180°C @ 60 Hz 0.0083 s @ 50 Hz 0.0100 s At Any R ated L oad Condition And W ith R ated V Applied F ollowing S urge. RRM J 307U(R) Series (800V to 2000V) Fig. 9 - Maximum Non-Repetitive Surge Current Fig. 10 - Maximum Non-Repetitive Surge Current 1000 2000 3000 4000 5000 6000 7000 8000 9000 0.01 0.1 1 P uls e T rain Duration (s ) P eak H alf Sine W ave F orward Current (A) Vers us Puls e T rain Duration. Init ial T = 180 °C No Voltage R eapplied R ated V R eapplied Maximum Non R epetitive S urge Current RRM J 307U(R) Series (800V to 2000V) Fig. 11 - Maximum Non-Repetitive Surge Current Fig. 12 - Maximum Non-Repetitive Surge Current 1500 2000 2500 3000 3500 4000 4500 5000 5500 6000 1 10 100 Number Of E qual Amplitude Half Cycle Current P uls es (N) P eak H alf S ine Wave F orward Current (A) Initial T = 180°C @ 60 Hz 0.0083 s @ 50 Hz 0.0100 s At Any R ated L oad Condition And W ith R ated V Applied F ollowing S urge. RRM J 307U(R) Series (2500V) 1000 2000 3000 4000 5000 6000 0.01 0.1 1 P uls e T rain Duration (s ) P eak H alf S ine W ave F orward Current (A) Vers us P uls e T rain Duration. Initial T = 180 °C No Voltage R eapplied R ated V R eapplied RRM J Maximum Non R epetitive S urge Current 307U(R) Series (2500V) © 1995 Thinki Semiconductor Co., Ltd. http://www.thinkisemi.com.tw/ Page 6/7Rev.12T

Fig. 13 - Forward Voltage Drop Characteristics Fig. 14 - Forward Voltage Drop Characteristics 100 1000 10000 0 0.5 1 1.5 2 2.5 3 T = 25°C J Ins tantaneous F orward Voltage (V) Ins tantaneous F orward Current (A) 307U(R) Series (800V to 2000V) T = 180°C J 100 1000 10000 00 . 511 . 522 . 533 . 5 T = 2 5° C J Ins tantaneous F orward Voltage (V) Ins tantaneous F orward Current (A) 307U(R) Series (2500V) T = 180°C J Fig. 15 - Thermal Impedance Z thJC Characteristic 0.001 0.01 0.1 0.001 0.01 0.1 1 10 S quare Wave Puls e Duration (s ) thJC T r ans ient T hermal Impedance Z (K/W) 307U(R) Series S teady S tate Value: R = 0.14 K/ W (DC Operation) thJC © 1995 Thinki Semiconductor Co., Ltd. http://www.thinkisemi.com.tw/ Page 7/7Rev.12T