3055L104

3055L104 UMW | Alldatasheet

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 Lower RDS(on)  Lower VDS(on)  Tighter VSD Specification  Lower Diode Reverse Recovery Time  Lower Reverse Recovery Stored Charge Typical Applications  Power Supplies  Converters  Power Motor Controls  Bridge Circuits D S G VDS(V) = 60V ID = 12A (VGS = 10V) RDS(ON) < 104mΩ (V GS = 5V) MAXIMUM RATINGS (TJ = 25°C unless otherwise noted) Rating Symbol Value Unit Drain−to−Source Voltage VDSS 60 Vdc Drain−to−Gate Voltage (RGS = 10 M) VDGR 60 Vdc Gate−to−Source Voltage, Continuous − Non−Repetitive (tp10 ms) VGS VGS Vdc Drain Current − Continuous @ TA = 25°C − Continuous @ TA = 100°C − Single Pulse (tp10 s) ID ID IDM Adc Apk Total Power Dissipation @ TA = 25°C Derate above 25°C Total Power Dissipation @ TA = 25°C (Note 1) Total Power Dissipation @ TA = 25°C (Note 2) PD 48 0.32 2.1 1.5 W W/°C W W Operating and Storage Temperature Range TJ, Tstg −55 to +175 Single Pulse Drain−to−Source Avalanche Energy − Starting TJ = 25°C (VDD = 25 Vdc, VGS = 5.0 Vdc, L = 1.0 mH IL(pk) = 11 A, VDS = 60 Vdc) EAS 61 mJ Thermal Resistance, − Junction−to−Case − Junction−to−Ambient (Note 1) − Junction−to−Ambient (Note 2) R JC R JA R JA 3.13 71.4 100 °C/W Maximum Lead Temperature for Soldering Purposes, 1/8″ from case for 10 seconds TL 260 °CMaximum ratings are those values beyond which device damage can occur. Maximum ratings applied to the device are individual stress limit values (not normal operating conditions) and are not valid simultaneously. If these limitsare exceeded, device functional operation is not implied, damage may occur and reliability may be affected. 1. When surface mounted to an FR4 board using 1″ pad size, (Cu Area 1.127 in2). 2. When surface mounted to an FR4 board using the minimum recommended pad size, (Cu Area 0.412 in2). www.umw-ic.com 1 UTD Semiconductor Co.,Limited

ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise noted) Characteristic Symbol Min Typ Max Unit Drain−to−Source Breakdown Voltage (Note 3) (VGS = 0 Vdc, ID = 250 Adc) Temperature Coefficient (Positive) V(BR)DSS 60 70 62.9 Vdc mV/°C Zero Gate Voltage Drain Current (VDS = 60 Vdc, VGS = 0 Vdc) (VDS = 60 Vdc, VGS = 0 Vdc, TJ = 150°C) IDSS 1.0 Adc Gate−Body Leakage Current (VGS = ± 15 Vdc, VDS = 0 Vdc) IGSS ±100 nAdc Gate Threshold Voltage (Note 3) (VDS = VGS , ID = 250 Adc) Threshold Temperature Coefficient (Negative) VGS(th) 1.0 1.6 4.2 2.0 Vdc mV/°C Static Drain−to−Source On−Resistance (Note 3) (VGS = 5.0 Vdc, ID = 6.0 Adc) R DS(on) 89 104 m Static Drain−to−Source On−Voltage (Note 3) (VGS = 5.0 Vdc, ID = 12 Adc) (VGS = 5.0 Vdc, ID = 6.0 Adc, TJ = 150°C) VDS(on) 0.98 0.86 1.50 Vdc Forward Transconductance (Note 3) (VDS = 8.0 Vdc, ID = 6.0 Adc) gFS 9.1 mhos Input Capacitance (V 25 Vdc V 0 Vdc C iss 316 440 pF Output Capacitance (VDS = 25 Vdc, VGS = 0 Vdc, f = 1.0 MHz) C oss 105 150 Transfer Capacitance f = 1.0 MHz) C rss 35 70 Turn−On Delay Time td(on) 9.2 20 ns Rise Time (VDD = 30 Vdc, ID = 12 Adc, tr 104 210 Turn−Off Delay Time (VDD 30 Vdc, ID 12 Adc, VGS = 5.0 Vdc, RG = 9.1 ) (Note 3) td(off) 19 40 Fall Time GS G tf 40.5 80 Gate Charge (V 48 Vdc I 12 Adc Q T 7.4 20 nCG aeC ag e (VDS = 48 Vdc, ID = 12 Adc, VGS = 5 0 Vdc) (Note 3) Q 1 2.0VGS = 5.0 Vdc) (Note 3) Q 2 4.0 Forward On−Voltage (IS = 12 Adc, VGS = 0 Vdc) (Note 3) (IS = 12 Adc, VGS = 0 Vdc, TJ = 150°C) VSD 0.95 0.82

1.2 Vdc

(I 12 Adc V 0 Vdc trr 35 nse e se eco e y e (IS = 12 Adc, VGS = 0 Vdc, dIS/dt = 100 A/s) (Note 3) ta 21 s dIS/dt = 100 A/s) (Note 3) tb 14 Reverse Recovery Stored Charge Q RR 0.04 C 3. Pulse Test: Pulse Width ≤ 300 s, Duty Cycle ≤ 2%. 4. Switching characteristics are independent of operating junction temperatures. UMW R 3055L104 60V N -Channel MOSFETwww.umw-ic.com 2 UTD Semiconductor Co.,Limited

capacitance varies greatly with applied voltage. and Q2 and VGSP are read from the gate charge curve. drain current, the mathematical solution is complex. snubbing reduces switching losses. Figure 7. Capacitance Variation

Millimeters InchesRef. A B C D E G H L 2.10 0.66 0.40 2.50 0.10 0.86 0.60 0.083 0.026 0.016 0.098 0.004 0.034 0.024 6.40 9.50 10.70 0.374 0.421 0.053 0.065 5.90 6.30 0° 6° 0.232 0.248 6.80 0.252 0.268 4.47 4.67 0.176 0.184 1.09 1.21 0.043 0.048 1.35 1.65 0° 6° B2 5.18 5.48 0.202 0.216 C2 0.44 0.58 0.017 0.023 5.30REF 4.63 0.182 0.209REF E H B G L DETAIL A DETAIL A A C D L2P ackage Mechanical Data TO-252 Marking Orderinginformation Order code Package Baseqty Deliverymode UMW NTD3055L104T4G TO-252 2500 Tape and reel UMW R 3055L104 60V N -Channel MOSFETwww.umw-ic.com 7 UTD Semiconductor Co.,Limited