303CNQ SMC | Alldatasheet
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Technical content
Technical Data Green Products Data Sheet N1214, Rev. B
- Weiqi Street, Airport Development Zone, Jiangning District, Nanjing, China 211113 (86) 25-87123907 • 303CNQ… SERIES 303CNQ080/303CNQ100 SCHOTTKY RECTIFIER Applications:
- High current switching power supply ● Plating power supply ● Free-Wheeling diodes
- Reverse battery protection ● Converters ● UPS System ● Welding Features:
- 175 ℃ TJ operation
- Center tap module
- High purity, high temperature epoxy encapsulation for enhanced mechanical strength and moisture resistance
- Low forward voltage drop
- High frequency operation
- Guard ring for enhanced ruggedness and long term reliability
- This is a Pb − Free Device
- All SMC parts are traceable to the wafer lot
- Additional testing can be offered upon request Mechanical Dimensions: In mm/ Inches PRM4 (Non-Isolated) MARKING,MOLDING RESIN Marking for 303CNQ080/100, 1 st row SS YYWWL, 2 nd row 303CNQ080/100 Where YY is the manufacture year WW is the manufacture week code L is the wafer’s Lot Number Molding resin Epoxy resin UL:94V-0
Technical Data Green Products Data Sheet N1214, Rev. B
- Weiqi Street, Airport Development Zone, Jiangning District, Nanjing, China 211113 (86) 25-87123907 • 303CNQ… SERIES Maximum Ratings: Characteristics Symbol Condition Max. Units 80 303CNQ080 Peak Inverse Voltage V RWM - 100 303CNQ100 V 150 per leg Max. Average Forward Current IF(AV) 50% duty cycle @T C =126°C, rectangular wave form 300 per device A Max. Peak One Cycle Non- Repetitive Surge Current (per leg) IFSM 8.3 ms, half Sine pulse 3000 A Non-Repetitive Avalanche Energy(peg leg) E AS TJ=25℃,IAS=1A,L=30mH 15 mJ Repetitive Avalanche Current(peg leg) IAR Current decaying linearly to zero in 1 μsec Frequency limited by TJ max. VA=1.5× VR typical 1 A Electrical Characteristics: Characteristics Symbol Condition Max. Units VF1 @ 150A, Pulse, TJ = 25 °C @ 300A, Pulse, TJ = 25 °C 0.91 1.09 V Max. Forward Voltage Drop (per leg) * VF2 @ 150A, Pulse, TJ = 125 °C @ 300A, Pulse, TJ = 125 °C 0.72 0.85 V IR1 @VR = rated VR TJ = 25 °C 4.5 mA Max. Reverse Current (per leg) * IR2 @VR = rated VR TJ = 125 °C 60 mA Max. Junction Capacitance (per leg) CT @VR = 5V, TC = 25 °C fSIG = 1MHz 4150 pF Typical Series Inductance (per leg) LS Measured lead to lead 5 mm from package body 6.0 nH Max. Voltage Rate of Change dv/dt - 10,000 V/μs * Pulse Width < 300µs, Duty Cycle <2% Thermal-Mechanical Specifications: Characteristics Symbol Condition Specification Units Max. Junction Temperature TJ - -55 to +175 °C Max. Storage Temperature Tstg - -55 to +175 °C Maximum Thermal Resistance Junction to Case (per leg) RθJC DC operation 0.40 °C/W Maximum Thermal Resistance Junction to Case (per package) R θJC DC operation 0.20 °C/W Typical Thermal Resistance, case to Heat Sink Rθcs Mounting surface, smooth and greased 0.10 °C/W Mounting Torque 24(min) 35(max)Mounting Torque T M - Terminal Torque 35(min) 46(max) Kg-cm Approximate Weight wt - 79 g Case Style PRM4 Non-Isolated
Technical Data Green Products Data Sheet N1214, Rev. B
- Weiqi Street, Airport Development Zone, Jiangning District, Nanjing, China 211113 (86) 25-87123907 • 303CNQ… SERIES
Technical Data Green Products Data Sheet N1214, Rev. B
- Weiqi Street, Airport Development Zone, Jiangning District, Nanjing, China 211113 (86) 25-87123907 • 303CNQ… SERIES DISCLAIMER: 1- The information given herein, including the specifications and dimensions, is subject to change without prior notice to improve product characteristics. Before ordering, purchasers are advised to contact the SMC - Sangdest Microelectronics (Nanjing) Co., Ltd sales department for the latest version of the datasheet(s). 2- In cases where extremely high reliability is required (such as use in nuclear power control, aerospace and aviation, traffic equipment, medical equipment , and safety equipment) , safety should be ensured by using semiconductor devices that feature assured safety or by means of users’ fail-safe precautions or other arrangement . 3- In no event shall SMC - Sangdest Microelectronics (Nanjing) Co., Ltd be liable for any damages that may result from an accident or any other cause during operation of the user’s units according to the datasheet(s). SMC - Sangdest Microelectronics (Nanjing) Co., Ltd assumes no responsibility for any intellectual property claims or any other problems that may result from applications of information, products or circuits described in the datasheets. 4- In no event shall SMC - Sangdest Microelectronics (Nanjing) Co., Ltd be liable for any failure in a semiconductor device or any secondary damage resulting from use at a value exceeding the absolute maximum rating. 5- No license is granted by the datasheet(s) under any patents or other rights of any third party or SMC - Sangdest Microelectronics (Nanjing) Co., Ltd. 6- The datasheet(s) may not be reproduced or duplicated, in any form, in whole or part, without the expressed written permission of SMC - Sangdest Microelectronics (Nanjing) Co., Ltd. 7- The products (technologies) described in the datasheet(s) are not to be provided to any party whose purpose in their application will hinder maintenance of international peace and safety nor are they to be applied to that purpose by their direct purchasers or any third party. When exporting these products (technologies), the necessary procedures are to be taken in accordance with related laws and regulations..