30100CT

MBR30100CT SMCDIODE | Alldatasheet

Document overview

• Manufacturer or author: Provided By alldatasheet.com(free datasheet download site)
• PDF pages: 6

Technical content

Data Sheet N0039, Rev. C  China - Germany - Korea - Singapore - UnitedStates  http://www.smc-diodes.com - sales@smc-diodes.com MBR30100CT MBRB30100CT MBR30100CT-1 MBR30100CT/MBRB30100CT/MBR30100CT-1 SCHOTTKY RECTIFIER Features Applications MBR30100CT MBRB30100CT MBR30100CT-1 TO-220AB D2PAK TO-262 Maximum Ratings: Characteristics Symbol Condition Max. Units PeakRepetitiveReverseVoltage WorkingPeakReverseVoltage DCBlockingVoltage VRRM VRWM VR 100 V AverageRectifiedForwardCurrent IF(AV) 50%dutycycle@Tc=133°C, rectangularwaveform 15(PerLeg) A30(PerDevice) PeakRepetitiveForward Current(PerLeg) IFRM RatedVRsquarewave, 20KHzTC=133°C 20 A PeakOneCycleNon-RepetitiveSurge Current(PerLeg) IFSM 8.3ms,HalfSinepulse 200 A  Switching power supply  Converters  Free-Wheeling diodes  Reverse battery protection  175 C TJ operation  Center tap configuration  Low forward voltage drop  High purity, high temperature epoxy encapsulation for enhanced mechanical strength and moisture resistance  High frequency operation  Guard ring for enhanced ruggedness and long term reliability  This is a Pb − Free Device  All SMC parts are traceable to the wafer lot  Additional testing can be offered upon request

Data Sheet N0039, Rev. C  China - Germany - Korea - Singapore - UnitedStates  http://www.smc-diodes.com - sales@smc-diodes.com MBR30100CT MBRB30100CT MBR30100CT-1 * Pulsewidth <300µs, duty cycle<2% Characteristics Symbol Condition Specification Units JunctionTemperature TJ - -55to+175 C StorageTemperature Tstg - -55to+175 C TypicalThermalResistanceJunctionto Case RJC DCoperation 1.5 C/W TypicalThermal ResistanceJunctiontoCase RJA DCoperation 50 C/W TypicalThermal Resistance,CasetoHeatSink RCS Mountingsurface,smoothand greased 0.50 C/W CaseStyle TO-220ABD2PAKTO-262 Forinformationontapeandreelspecifications,includingpart orientationandtapesizes,pleaserefertoourtapeandreel packagingspecification. Electrical Characteristics: Characteristics Symbol Condition Typ. Max. Units ForwardVoltageDrop (PerLeg)* VF1 @15A,Pulse,TJ =25C @30A,Pulse,TJ =25C 0.78 0.90 0.85 1.05 V VF2 @15A,Pulse,TJ =125C @30A,Pulse,TJ =125C 0.67 0.77 0.70 0.85 V ReverseCurrent (PerLeg)* IR1 @VR =ratedVR TJ =25C 0.003 1.00 mA IR2 @VR =ratedVR TJ =125C 2 15.0 mA JunctionCapacitance(PerLeg) CT @VR =5V,TC =25C fSIG =1MHz 380 500 pF SeriesInductance (perleg) LS Measuredleadtolead5mmfrom packagebody 8.0 - nH VoltageRateofChange dv/dt - - 10,000 V/s Thermal-Mechanical Specifications: Tube Specification Tube Specification(TO-220AB/TO-262) Device Package Weight Shipping MBR30100CT TO-220AB 1.8g 50pcs/tube MBRB30100CT D²PAK 1.85g 800pcs/reel MBR30100CT-1 TO-262 1.85g 50pcs/tube

Data Sheet N0039, Rev. C  China - Germany - Korea - Singapore - UnitedStates  http://www.smc-diodes.com - sales@smc-diodes.com MBR30100CT MBRB30100CT MBR30100CT-1 Ratings and Characteristics Curves Marking Diagram WhereXXXXX isYYWWL MBR =Device Type B =Packagetype 30 =ForwardCurrent (30A) 100 =ReverseVoltage(100V) CT-1 =Configuration SSG = SSG YY =Year WW =Week L =Lot Number Cautions：Moldingresin Epoxy resinUL:94V-0 Fig.2-Typical Reverse CharacteristicsFig.1-Typical Junction Capacitance TJ=125℃ TJ=25℃ TJ=25℃ Fig.3-Typical Instantaneous Forward Voltage Characteristics TJ=25℃ TJ=125℃

Data Sheet N0039, Rev. C  China - Germany - Korea - Singapore - UnitedStates  http://www.smc-diodes.com - sales@smc-diodes.com MBR30100CT MBRB30100CT MBR30100CT-1 Carrier Tape Specification D2PAK Symbol Millimeters Min. Max. A 10.70 10.90 B 16.03 16.23 C 5.11 5.31 d 1.45 1.65 E 1.65 1.85 F 11.40 11.60 P0 3.90 4.10 P 15.90 16.10 P1 1.90 2.10 W 23.90 24.30 Mechanical Dimensions TO-220AB Symbol Millimeters Min. Typical Max. A 4.42 4.57 4.72 A1 1.17 1.27 1.37 A2 2.52 2.69 2.89 b 0.71 0.81 0.96 b1 1.17 1.27 1.37 c 0.31 0.38 0.61 D 14.94 15.24 15.54 D1 8.85 9.00 9.15 E 10.01 10.16 10.31 e 2.54 e1 4.98 5.06 5.18 H1 6.04 6.24 6.44 L 12.7 13.56 13.80 L1 3.56 3.5 3.96 ΦP 3.74 3.84 4.04 Q 2.54 2.74 2.94 Θ1 7° Θ2 3° Θ3 4°

Data Sheet N0039, Rev. C  China - Germany - Korea - Singapore - UnitedStates  http://www.smc-diodes.com - sales@smc-diodes.com MBR30100CT MBRB30100CT MBR30100CT-1 Mechanical Dimensions D2PAK Symbol Millimeters Min. Typical Max. A 4.47 4.70 4.85 A1 0 0.10 0.25 A2 2.59 2.69 2.89 b 0.71 0.81 0.96 b1 1.17 1.27 1.37 c 0.31 0.38 0.61 c1 1.17 1.27 1.37 D 8.50 8.70 8.90 D1 6.40 E 10.01 10.16 10.31 E1 7.6 E2 9.98 10.08 10.31 e 2.54 H 14.6 15.1 15.6 L 2.00 2.30 2.74 L1 1.12 1.27 1.42 L2 1.30 2.20 L3 0.25BSC e 0 - 8° e1 5° e2 4° e3 4° Mechanical Dimensions TO-262 Symbol Millimeters Min. Typical Max. A 4.55 4.70 4.85 A1 0 0.10 0.25 A2 2.59 2.69 2.89 b 0.71 0.81 0.96 b1 1.27 c 0.36 0.38 0.61 c1 1.17 1.27 1.37 D 8.55 8.70 8.85 D1 6.40 E 10.01 10.16 10.31 E1 7.6 E2 9.98 10.08 10.18 e 2.54 H 14.6 15.1 15.6 L 2.00 2.30 2.70 L1 1.17 1.27 1.40 L2 2.20 L3 0.25BSC e 0 - 8° e1 5° e2 4° e3 4°

Data Sheet N0039, Rev. C  China - Germany - Korea - Singapore - UnitedStates  http://www.smc-diodes.com - sales@smc-diodes.com MBR30100CT MBRB30100CT MBR30100CT-1 DISCLAIMER: 1-Theinformationgivenherein,includingthespecificationsanddimensions,issubjecttochangewithoutpriornoticetoimproveproduct characteristics.Beforeordering,purchasersareadvisedtocontacttheSMC-SangdestMicroelectronics(Nanjing)Co.,Ltdsales departmentforthelatestversionofthedatasheet(s). 2-Incaseswhereextremelyhighreliabilityisrequired(suchasuseinnuclearpowercontrol,aerospaceandaviation,trafficequipment, medicalequipment,andsafetyequipment),safetyshouldbeensuredbyusingsemiconductordevicesthatfeatureassuredsafetyorby meansofusers’fail-safeprecautionsorotherarrangement. 3-InnoeventshallSMC-SangdestMicroelectronics(Nanjing)Co.,Ltdbeliableforanydamagesthatmayresultfromanaccidentorany othercauseduringoperationoftheuser’sunitsaccordingtothedatasheet(s).SMC-SangdestMicroelectronics(Nanjing)Co.,Ltdassumes noresponsibilityforanyintellectualpropertyclaimsoranyotherproblemsthatmayresultfromapplicationsofinformation,productsor circuitsdescribedinthedatasheets. 4-InnoeventshallSMC-SangdestMicroelectronics(Nanjing)Co.,Ltdbeliableforanyfailureinasemiconductordeviceoranysecondary damageresultingfromuseatavalueexceedingtheabsolutemaximumrating. 5-Nolicenseisgrantedbythedatasheet(s)underanypatentsorotherrightsofanythirdpartyorSMC-SangdestMicroelectronics (Nanjing)Co.,Ltd. 6-Thedatasheet(s)maynotbereproducedorduplicated,inanyform,inwholeorpart,withouttheexpressedwrittenpermissionofSMC- SangdestMicroelectronics(Nanjing)Co.,Ltd. 7-Theproducts(technologies)describedinthedatasheet(s)arenottobeprovided toanypartywhosepurposeintheirapplicationwill hindermaintenanceofinternationalpeaceandsafetynoraretheytobeappliedtothatpurposebytheirdirectpurchasersoranythirdparty. Whenexportingtheseproducts(technologies),thenecessaryproceduresaretobetakeninaccordancewithrelatedlawsandregulations..