2W005 WTE | Alldatasheet
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Features
! Diffused Junction ! L o w F o r w a r d V o l t a g e D r o p A ! High Current Capability ! High Reliability ! High Surge Current Capability B ! I d e a l f o r P r i n t e d C i r c u i t B o a r d s + ~ ~ - ! UL Recognized File # E157705 C D Mechanical Data ! C a s e : M o l d e d P l a s t i c E ! Terminals: Plated Leads Solderable per MIL-STD-202, Method 208 ~ ! Polarity: As Marked on Body ! Weight: 1.3 grams (approx.) - ! M o u n t i n g P o s i t i o n : A n y + ! M a r k i n g : T y p e N u m b e r G G ~ Maximum Ratings and Electrical Characteristics @T A=25°C unless otherwise specified Single Phase, half wave, 60Hz, resistive or inductive load. For capacitive load, derate current by 20%. Characteristic Symbol 2W005 2W01 2W02 2W04 2W06 2W08 2W10 Unit Peak Repetitive Reverse Voltage Working Peak Reverse Voltage DC Blocking Voltage V RRM VRWM VR 50 100 200 400 600 800 1000 V RMS Reverse Voltage V R(RMS) 35 70 140 280 420 560 700 V Average Rectified Output Current ( N o t e 1 ) @ T A = 50°C IO 2.0 A Non-Repetitive Peak Forward Surge Current 8.3ms Single half sine-wave superimposed on rated load (JEDEC Method) I FSM 50 A Forward Voltage (per element) @IF = 2.0A V FM 1.0 V Peak Reverse Current @TA = 25°C At Rated DC Blocking Voltage @TA = 100°C IRM 500 µA Operating Temperature Range T j -55 to +125 °C Storage Temperature Range T STG -55 to +150 °C Note: 1. Leads maintained at ambient temperature at a distance of 9.5mm from the case. WTE POWER SEMICONDUCTORS RB-20 Dim Min Max A 9.10 9.40 B 6.90 7.40 C 27.9 — D 25.4 — E 0.71 0.81 G 4.60 5.60 All Dimensions in mm
0.01 0.1 1.0 0.2 0.6 1.0 1.4 I , INSTANTANEOUS FORWARD CURRENT (A)F V , INSTANTANEOUS FORWARD VOLTAGE (V) Fig. 2 Typical Forward Characteristics, per element F T = 25°C Pulse width = 300µs j 1 10 100 I , PEAK FORWARD SURGE CURRENT (A)FSM NUMBER OF CYCLES AT 60 Hz Fig. 3 Max Non-Repetitive Surge Current Pulse Width 8.3 ms Single Half-Sine-Wave (JEDEC Method) 100 1 10 100 C , JUNCTION CAPACITANCE (pF)j V , REVERSE VOLTAGE (V) Fig. 4 Typical Junction Capacitance R T = 25°C f = 1mz j 0.01 0.1 1.0 100 200 0 40 80 160 I , INSTANTANEOUS REVERSE CURRENT (µA)R PERCENT OF RATED PEAK REVERSE VOLTAGE (%) Fig. 5 Typical Reverse Characteristics 120 T = 100°Cj T = 25°Cj 0.5 1.0 1.5 0 25 50 100 125 150 75 I , AVERAGE FORWARD CURRENT (A)F T , AMBIENT TEMPERATURE (°C) Fig. 1 Forward Current Derating Curve A 2.0 Single phase half-sine-wave 60Hz resistive or inductive load 2W 005 – 2W 10 2 of 3 © 2002 W on-Top Electronics
2W005 – 2W10 3 of 3 © 2002 Won-Top Electronics
ORDERING INFORMATION
Product No. Package Type Shipping Quantity 2W005 Round Bridge 1000 Units/Box 2W01 Round Bridge 1000 Units/Box 2W02 Round Bridge 1000 Units/Box 2W04 Round Bridge 1000 Units/Box 2W06 Round Bridge 1000 Units/Box 2W08 Round Bridge 1000 Units/Box 2W10 Round Bridge 1000 Units/Box Shipping quantity given is for minimum packing quantity only. For minimum order quantity, please consult the Sales Department. Won-Top Electronics Co., Ltd (WTE) has checked all information carefully and believes it to be correct and accurate. However, W TE cannot assume any responsibility for inaccuracies. Furthermore, this information does not give the purchaser of semiconductor devices any license under patent rights to manufacturer. WTE reserves the right to change any or all information herein without further notice. WARNING: DO NOT USE IN LIFE SUPPORT EQUIPMENT. WTE power semiconductor products are not authorized for use as critical components in l ife support devices or systems without the express written approval. We power your everyday. Won-Top Electronics Co., Ltd. No. 44 Yu Kang North 3rd Road, Chine Chen Dist., Kaohsiung, Taiwan Phone: 886-7-822-5408 or 886-7-822-5410 Fax: 886-7-822-5417 Email: sales@wontop.com Internet: http://www.wontop.com