2R3S SSDI | Alldatasheet
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Technical content
Solid State Devices, Inc.
14701 Firestone Blvd * La Mirada, Ca 90638
Phone: (562) 404-4474 * Fax: (562) 404-1773 ssdi@ssdi-power.com * www.ssdi-power.com Designer’s Data Sheet Part Number/Ordering Information 1/ __ R3S __ Screening3/ __ = Not Screened TX = TX Level TXV = TXV Level S = S Level Family/Voltage 2 = 20V 3 = 30V 4 = 40V 5 = 50V 7 = 70V 10 = 100V 12 = 125V 15 = 150V 20 = 200V 2R3S THRU 20R3S
8 AMPS
20 – 200 VOLTS 35 nsec HYPER FAST RECTIFIER Features:
- Hyper Fast Recovery: 35nsec Maximum
- Low Forward Voltage Drop
- Low Reverse Leakage Current
- Single Chip Construction
- Hermetically Sealed Package
- Metalurgically Bonded Construction
- TX, TXV, and S-Level Screening Available 2/ Maximum Ratings 2/ Symbol Value Units Peak Repetitive Reverse Voltage 2R3S 3R3S 4R3S 5R3S 7R3S 10R3S 12R3S 15R3S 20R3S V RRM VRWM VR 100 125 150 200 Volts Average Rectified Forward Current (Resistive Load, 60 Hz Sine Wave, TA = 25 °C) Io 8 Amps Peak Surge Current (8.3 ms Pulse, Half Sine Wave, TA = 25 °C) IFSM 200 Amps Operating & Storage Temperature TOP & TSTG -65 to +175 ºC Maximum Total Thermal Resistance Junction to Case RθJC 1.5 ºC/W Notes: 1/ For ordering information, Price, Operating Curves, and Availability- Contact Factory. 2/ Unless Otherwise Specified, All Maximum Ratings/Electrical Characteristics @25°C. 3/ Screened to MIL-PRF-19500. DO-4: NOTE: All specifications are subject to change without notification. SCD's for these devices should be reviewed by SSDI prior to release. DATA SHEET #: RC0029D DOC
Solid State Devices, Inc. Phone: (562) 404-4474 * Fax: (562) 404-1773 ssdi@ssdi-power.com * www.ssdi-power.com 2R3S THRU 20R3S Electrical Characteristics Symbol Max Units Instantaneous Forward Voltage Drop (IF=8A, TA=25 ºC, 300μsec pulse) VF 0.90 VDC Reverse Leakage Current (Rated VR, TA=25 ºC, 300μsec pulse minimum) IR1 100 μA Reverse Leakage Current (Rated VR, TA=100 ºC, 300μsec pulse minimum) IR2 2.0 mA Reverse Recovery Time (TA=25 ºC, IF = 0.5A, IR = 1.0A, IRR = 0.25A) tRR 35 nsec Typical Junction Capacitance (VR = 10VDC, TA = 25ºC, f = 1MHz) CJ 300 pF Notes: 1/ For ordering information, Price, Operating Curves, and Availability- Contact Factory. 2/ Screened to MIL-PRF-19500. 3/ Unless Otherwise Specified, All Maximum Ratings/Electrical Characteristics @25°C. Case Outline: DO-4 Stud: Cathode Lead: Anode NOTE: All specifications are subject to change without notification. SCD's for these devices should be reviewed by SSDI prior to release. DATA SHEET #: RC0029D DOC