2D0N60P

KHB2D0N60P KEC | Alldatasheet

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1. 5. 10 1/7 SEMICONDUCTOR TECHNICAL DATA KHB2D0N60P/F/F2 N CHANNEL MOS FIELD EFFECT TRANSISTOR Revision No : 0 General Description This planar stripe MOSFET has better characteristics, such as fast switching time, low on resistance, low gate charge and excellent avalanche characteristics. It is mainly suitable for switching mode power supplies.

FEATURES

VDSS= 600V, ID= 2.0A Drain-Source ON Resistance : RDS(ON)=5.0 @VGS = 10V Qg(typ.) = 10.9nC MAXIMUM RATING (Tc=25 * : Drain current limited by maximum junction temperature. CHARACTERISTIC SYMBOL RATING UNIT KHB2D0N60P KHB2D0N60F KHB2D0N60F2 Drain-Source Voltage VDSS 600 V Gate-Source Voltage VGSS 30 V Drain Current @TC=25 ID 2.0 2.0* A@TC=100 1.2 1.2* Pulsed (Note1) IDP 8.0 8.0* Single Pulsed Avalanche Energy (Note 2) EAS 120 mJ Repetitive Avalanche Energy (Note 1) EAR 5.4 mJ Peak Diode Recovery dv/dt (Note 3) dv/dt 5.5 V/ns Drain Power Dissipation Tc=25 PD 54 23 W Derate above25 0.43 0.18 W/ Maximum Junction Temperature Tj 150 Storage Temperature Range Tstg -55 150 Thermal Characteristics Thermal Resistance, Junction-to-Case RthJC 2.32 5.5 Thermal Resistance, Case-to-Sink RthCS 0.5 - Thermal Resistance, Junction-to- Ambient RthJA 62.5 62.5 DIM MILLIMETERS TO-220AB 1.46 A B C D E F G H J K M N O 0.8 0.1+_ 2.8 0.1+_ 2.54 0.2+_ 1.27 0.1+_ 1.4 0.1+_ 13.08 0.3+_ 3.6 0.2+_ +_9.9 0.2 +_9.2 0.2 +_4.5 0.2 +_2.4 0.2

15.95 MAX

1.3+0.1/-0.05 0.5+0.1/-0.05 3.7 1.5 A F B J G K M L L E I I O C HNN Q D Q P P1. GATE 2. DRAIN 3. SOURCE 123 TO-220IS (1) A A B B C C D D E E F F G G H H

1.47 MAX

13.0 MAXJ

J K K L M L N NN O O Q R Q R 123 M DIM MILLIMETERS 10.16 0.2+_ 15.87 0.2+_ 2.54 0.2+_ 0.8 0.1+_ 3.18 0.1+_ 0.5 0.1+_ 3.23 0.1+_ 2.54 0.2+_ 4.7 0.2+_ 6.68 0.2+_ 2.76 0.2+_ 3.3 0.1+_ 12.57 0.2+_ 1. GATE 2. DRAIN 3. SOURCE G D S PIN CONNECTION DIM MILLIMETERS TO-220IS 0.76+0.09/-0.05 A B C D E F G 0.5+0.1/-0.05H 1.2+0.25/-0.1 1.5+0.25/-0.1 J K L M N P Q R FQ1 2 3 L P N B G JM D N H E R K L S 0.5 Typ S D A C 1. GATE 2. DRAIN 3. SOURCE 10.0 0.3+_ 15.0 0.3+_ 2.70 0.3+_ Φ3.2 0.2+_ 3.0 0.3+_ 12.0 0.3+_ 13.6 0.5+_ 3.7 0.2+_ 2.54 0.1+_ 6.8 0.1+_ 4.5 0.2+_ 2.6 0.2+_ KHB2D0N60P KHB2D0N60F KHB2D0N60F2

1. 5. 10 2/7 KHB2D0N60P/F/F2 Revision No : 0 ELECTRICAL CHARACTERISTICS (Tc=25 CHARACTERISTIC SYMBOL TEST CONDITION MIN. TYP. MAX. UNIT Static Drain-Source Breakdown Voltage BVDSS ID=250 A, VGS=0V 600 - - V Breakdown Voltage Temperature Coefficient BVDSS/ Tj ID=250 A, Referenced to 25 - 0.65 - V/ Drain Cut-off Current IDSS VDS=600V, VGS=0V, - - 10 A Gate Threshold Voltage Vth VDS=VGS, ID=250 A 2.0 - 4.0 V Gate Leakage Current IGSS VGS= 30V, VDS=0V - - 100 nA Drain-Source ON Resistance RDS(ON) VGS=10V, ID=1.0A - 3.8 5.0 Dynamic Total Gate Charge Qg VDS=480V, ID=2.0A VGS=10V (Note4,5) - 10.9 12 nCGate-Source Charge Qgs - 1.7 3 Gate-Drain Charge Qgd - 5.0 5.5 Turn-on Delay time td(on) VDD=300V RL=150 RG=25 (Note4,5) - - 28 ns Turn-on Rise time tr - - 60 Turn-off Delay time td(off) - - 58 Turn-off Fall time tf - - 66 Input Capacitance Ciss VDS=25V, VGS=0V, f=1.0MHz - 388 504 pFReverse Transfer Capacitance Crss - 6.5 8.5 Output Capacitance Coss - 46 59.4 Source-Drain Diode Ratings Continuous Source Current IS VGS<Vth - - 2.0 A Pulsed Source Current ISP - - 8.0 Diode Forward Voltage VSD IS=2.0A, VGS=0V - - 1.5 V Reverse Recovery Time trr IS=2.0A, VGS=0V, dIs/dt=100A/ s - 300 - ns Reverse Recovery Charge Qrr - 1.55 - C Note 1) Repetivity rating : Pulse width limited by junction temperature. Note 2) L = 36.9mH, IS= 2.0A, VDD=50V, RG=25 , Starting Tj = 25 Note 3) IS 2.0A, dI/dt 300A/ , VDD BVDSS, Starting Tj = 25 Note 4) Pulse Test : Pulse width 300 , Duty Cycle 2%. Note 5) Essentially independent of operating temperature.

1. 5. 10 3/7 KHB2D0N60P/F/F2 Revision No : 0 Gate - Source Voltage VGS (V) Fig1. ID - VDS Drain - Source Voltage VDS (V) Drain Current ID (A) 10-1 100 101 10-1 10-2 100 101 100 10-1 6841 02 Fig2. ID - VGS Fig4. RDS(ON) - ID Drain Current ID (A) Drain Current ID (A)On - Resistance RDS(ON) (Ω) Fig5. IS - VSD Reverse Drain Current IS (A) 024 135 VGS = 20V VGS = 10V Source - Drain Voltage VSD (V)

25 C150 C

25 C -55 C

TOP : 15.0 V 10.0 V 8.0 V 7.0 V 6.0 V 5.5 V 5.0 V Bottom : 4.5V Normalized Breakdown Voltage BVDSS Fig3. BVDSS - Tj Fig6. RDS(ON) - Tj -100 -50 0.8 0.9 1.2 1.1 1.0 05 0 100 150 Junction Temperture Tj ( ) 0 50-100 -50 100 150 Normalized On Resistance Junction Temperature Tj ( )C 0.0 0.5 2.5 1.0 1.5 2.0 C VGS = 0V IDS = 250 VGS = 10V IDS = 2.0A

1. 5. 10 4/7 KHB2D0N60P/F/F2 Revision No : 0 Drain Current ID (A) Gate - Charge Qg (nC) Fig7. C - VDS Drain - Source Voltage VDS (V) Drain - Source Voltage VDS (V) 41 028 60 Fig8. Qg - VGS Fig9. Safe Operation Area Capacitance (pF) Gate - Source Voltage VGS (V) 200 600 400 100 500 700 300 Frequency = 1MHz Drain Current ID (A) Drain - Source Voltage VDS (V) Fig10. Safe Operation Area 100 10110-2 10-1 10110-1 100 100 101 100 10-2 10-1 101 102 103 DC 100 µs 10 µs 1µs 100 µs 0.0 2.0 1.2 0.4 0.8 1.6 75 15012550 10025 Drain Current ID (A) VDS = 120V VDS = 300V VDS = 480V 101100 102 103 CJunction Temperature Tj ( ) Fig11. ID - Tj ID=2.0A Tc= 25 Tj = 150 Single nonrepetitive pulse C C Operation in this area is limited by RDS(ON) Operation in this area is limited by R DS(ON) 100µs 10µs 1µs DC Tc= 25 Tj = 150 Single nonrepetitive pulse C C (KHB2D0N60P) (KHB2D0N60F,KHB2D0N60F2) Coss Ciss Crss

1. 5. 10 5/7 KHB2D0N60P/F/F2 Revision No : 0 TIME (sec) 10-5 10-3 10-2 10-1 100 10110-4 10-2 10-1 100 0.02 0.2 0.01 Fig12. Transient Thermal Response Curve Normalized Transient Thermal Resistance - Duty Factor, D= t1/t2 PDM Duty=0.5 Single Pulse 0.05 TIME (sec) 10-5 10-3 10-2 10-1 100 10110-4 10-2 10-1 100 0.2 0.01 Fig13. Transient Thermal Response Curve Normalized Transient Thermal Resistance Duty=0.5 Single Pulse 0.05 0.1 0.02 0.1 - Duty Factor, D= t1/t2 PDM

1. 5. 10 6/7 KHB2D0N60P/F/F2 Revision No : 0 Fig14. Gate Charge ID ID VDS VGS VGS VDS VGS 1.0 mA Fast Recovery Diode 10V 10 V 25 Ω RL Qg QgdQgs Q tp Fig16. Resistive Load Switching Fig15. Single Pulsed Avalanche Energy VDS(t) ID(t)VDS VGS10 V 25Ω L Time EAS= LIAS2 BVDSS - VDD BVDSS1 VDD IAS BVDSS VDS VGS tr td(off) toff td(on) ton tf 10% 90%

0.5 VDSS

0.8 VDSS

1. 5. 10 7/7 KHB2D0N60P/F/F2 Revision No : 0 Fig17. Source - Drain Diode Reverse Recovery and dv /dt IF IS VDS VSD ISD (DUT) VDS (DUT) VGS10V driver DUT Body Diode Recovery dv/dt Body Diode Forword Voltage drop Body Diode Forword Current Body Diode Reverse Current di/dt VDD IRM