29TMLI12F4V1 SEMIKRON | Alldatasheet
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© by SEMIKRON Rev. 4.0 09.02.2022 1 MiniSKiiP® 2 TMLI 3-Level TNPC IGBT-Module SKiiP 29TMLI12F4V1 Features* Fast Trench 4 IGBTs Trench IGBTs Robust and soft diodes in CAL technology Highly reliable spring contacts for electrical connections UL recognised: File no. E63532 Remarks* Case temperature limited to T C=125°C max.; TC = TS (for baseplateless modules) Product reliability results valid for Tj≤150°C (recommended Tjop=-40...+150°C) IGBT 1: outer IGBTs T1&T4 IGBT 2: inner IGBTs T2&T3 Diode 1: outer diodes D1&D4 Diode 2: inner diodes D2&D3 Absolute Maximum Ratings Symbol Conditions Values Unit IGBT1 VCES Tj = 25 °C 1200 V IC λpaste=0.8 W/(mK) Tj = 175 °C Ts = 25 °C 144 A Ts = 70 °C 115 A IC λpaste=2.5 W/(mK) Tj = 175 °C Ts = 25 °C 173 A Ts = 70 °C 139 A ICnom 150 A ICRM 450 A VGES -20 ... 20 V tpsc VCC = 800 V, VGE ≤ 15 V, Tj = 150 °C, VCES ≤ 1200 V 6 µs Tj -40 ... 175 °C IGBT2 VCES Tj = 25 °C 650 V IC λpaste=0.8 W/(mK) Tj = 175 °C Ts = 25 °C 131 A Ts = 70 °C 104 A IC λpaste=2.5 W/(mK) Tj = 175 °C Ts = 25 °C 150 A Ts = 70 °C 120 A ICnom 150 A ICRM 450 A VGES -20 ... 20 V tpsc VCC = 360 V, VGE ≤ 15 V, Tj = 150 °C, VCES ≤ 650 V 6 µs Tj -40 ... 175 °C Diode1 VRRM Tj = 25 °C 1200 V IF λpaste=0.8 W/(mK) Tj = 175 °C Ts = 25 °C 148 A Ts = 70 °C 117 A IF λpaste=2.5 W/(mK) Tj = 175 °C Ts = 25 °C 170 A Ts = 70 °C 136 A IFRM 450 A IFSM 10 ms, sin 180°, Tj = 25 °C 774 A Tj -40 ... 175 °C Diode2 VRRM Tj = 25 °C 650 V IF λpaste=0.8 W/(mK) Tj = 175 °C Ts = 25 °C 129 A Ts = 70 °C 99 A IF λpaste=2.5 W/(mK) Tj = 175 °C Ts = 25 °C 155 A Ts = 70 °C 121 A IFRM 300 A IFSM 10 ms, sin 180°, Tj = 25 °C 1200 A Tj -40 ... 175 °C Module It(RMS) 20 A per spring 100 A Tstg module without TIM -40 ... 125 °C Visol AC sinus 50 Hz, t = 1 min 2500 V
2 Rev. 4.0 09.02.2022 © by SEMIKRON MiniSKiiP® 2 TMLI 3-Level TNPC IGBT-Module SKiiP 29TMLI12F4V1 Features* Fast Trench 4 IGBTs Trench IGBTs Robust and soft diodes in CAL technology Highly reliable spring contacts for electrical connections UL recognised: File no. E63532 Remarks* Case temperature limited to T C=125°C max.; TC = TS (for baseplateless modules) Product reliability results valid for Tj≤150°C (recommended Tjop=-40...+150°C) IGBT 1: outer IGBTs T1&T4 IGBT 2: inner IGBTs T2&T3 Diode 1: outer diodes D1&D4 Diode 2: inner diodes D2&D3 Characteristics Symbol Conditions min. typ. max. Unit IGBT1 VCE(sat) IC = 150 A VGE = 15 V chiplevel Tj = 25 °C 2.05 2.42 V Tj = 150 °C 2.59 2.96 V VCE0 chiplevel Tj = 25 °C 1.10 1.28 V Tj = 150 °C 0.95 1.13 V rCE VGE = 15 V chiplevel Tj = 25 °C 6.3 7.6 m Ω Tj = 150 °C 11 12 m Ω VGE(th) VGE = VCE, IC = 5.2 mA 5.2 5.8 6.4 V ICES VGE = 0 V, V CE = 1200 V, Tj = 25 °C 1.5 mA Cies VCE = 25 V VGE = 0 V f = 1 MHz 8.80 nF Coes f = 1 MHz 0.58 nF Cres f = 1 MHz 0.47 nF QG VGE = - 8 V...+ 15 V 850 nC RGint Tj = 25 °C 5.0 Ω td(on) VCE = 300 V IC = 150 A VGE = +15/-15 V RG on = 1.6 Ω RG off = 1.6 Ω di/dton = 2550 A/µs di/dtoff = 1850 A/µs Tj = 150 °C 155 ns tr Tj = 150 °C 54 ns Eon Tj = 150 °C 5.2 mJ td(off) Tj = 150 °C 323 ns tf Tj = 150 °C 66 ns Eoff Tj = 150 °C 6.1 mJ Rth(j-s) per IGBT, λpaste=0.8 W/(mK) 0.35 K/W Rth(j-s) per IGBT, λpaste=2.5 W/(mK) 0.26 K/W IGBT2 VCE(sat) IC = 150 A VGE = 15 V chiplevel Tj = 25 °C 1.45 1.77 V Tj = 150 °C 1.70 2.10 V VCE0 chiplevel Tj = 25 °C 0.90 1.00 V Tj = 150 °C 0.82 0.90 V rCE VGE = 15 V chiplevel Tj = 25 °C 3.7 5.1 m Ω Tj = 150 °C 5.9 8.0 m Ω VGE(th) VGE = VCE, IC = 2.4 mA 5.1 5.8 6.4 V ICES VGE = 0 V, V CE = 650 V, Tj = 25 °C 1.5 mA Cies VCE = 25 V VGE = 0 V f = 1 MHz 9.24 nF Coes f = 1 MHz 0.60 nF Cres f = 1 MHz 0.27 nF QG VGE = - 8 V...+ 15 V 1360 nC RGint Tj = 25 °C 2.0 Ω td(on) VCE = 300 V IC = 150 A VGE = +15/-15 V RG on = 1.6 Ω RG off = 1.6 Ω di/dton = 3900 A/µs di/dtoff = 1650 A/µs Tj = 150 °C 118 ns tr Tj = 150 °C 40 ns Eon Tj = 150 °C 1.6 mJ td(off) Tj = 150 °C 276 ns tf Tj = 150 °C 79 ns Eoff Tj = 150 °C 6.1 mJ Rth(j-s) per IGBT, λpaste=0.8 W/(mK) 0.57 K/W Rth(j-s) per IGBT, λpaste=2.5 W/(mK) 0.46 K/W
© by SEMIKRON Rev. 4.0 09.02.2022 3 MiniSKiiP® 2 TMLI 3-Level TNPC IGBT-Module SKiiP 29TMLI12F4V1 Features* Fast Trench 4 IGBTs Trench IGBTs Robust and soft diodes in CAL technology Highly reliable spring contacts for electrical connections UL recognised: File no. E63532 Remarks* Case temperature limited to T C=125°C max.; TC = TS (for baseplateless modules) Product reliability results valid for Tj≤150°C (recommended Tjop=-40...+150°C) IGBT 1: outer IGBTs T1&T4 IGBT 2: inner IGBTs T2&T3 Diode 1: outer diodes D1&D4 Diode 2: inner diodes D2&D3 Characteristics Symbol Conditions min. typ. max. Unit Diode1 VF = VEC IF = 150 A VGE = 0 V chiplevel Tj = 25 °C 2.17 2.49 V Tj = 150 °C 2.11 2.42 V VF0 chiplevel Tj = 25 °C 1.30 1.50 V Tj = 150 °C 0.90 1.10 V rF chiplevel Tj = 25 °C 5.8 6.6 m Ω Tj = 150 °C 8.1 8.8 m Ω IRRM IF = 150 A di/dtoff = 3760 A/µs VR = 300 V VGE = +15/-15 V Tj = 150 °C 191.3 A Qrr Tj = 150 °C 26 µC Err Tj = 150 °C 6.5 mJ Rth(j-s) per Diode, λpaste=0.8 W/(mK) 0.45 K/W Rth(j-s) per Diode, λpaste=2.5 W/(mK) 0.36 K/W Diode2 VF = VEC IF = 150 A VGE = 0 V chiplevel Tj = 25 °C 1.40 1.76 V Tj = 150 °C 1.39 1.77 V VF0 chiplevel Tj = 25 °C 1.04 1.24 V Tj = 150 °C 0.85 0.99 V rF chiplevel Tj = 25 °C 2.4 3.5 m Ω Tj = 150 °C 3.6 5.2 m Ω IRRM IF = 150 A di/dtoff = 2640 A/µs VR = 300 V VGE = +15/-15 V Tj = 150 °C 131.4 A Qrr Tj = 150 °C 13.5 µC Err Tj = 150 °C 2.4 mJ Rth(j-s) per Diode, λpaste=0.8 W/(mK) 0.73 K/W Rth(j-s) per Diode, λpaste=2.5 W/(mK) 0.56 K/W Module LsCE1 - nH LCE - nH RCC'+EE' Ts = 25 °C - m Ω Ts = 125 °C - m Ω Ms to heat sink 2 2.5 Nm Mt - Nm Nm w 55 g Temperature Sensor R100 Tr=100°C (R25=1000Ω) 1670 ± 3% Ω R(T) R(T)=1000Ω[1+A(T-25°C)+B(T-25°C)2] B = 1.731*10-5°C-2
4 Rev. 4.0 09.02.2022 © by SEMIKRON Fig. 3: Typ. IGBT1 & Diode2 turn-on /-off energy = f (IC) Fig. 4: Typ. IGBT1 & Diode2 turn-on /-off energy = f(RG) Fig. 5: Typ. IGBT1 transfer characteristic Fig. 6: Typ. IGBT1 gate charge characteristic
© by SEMIKRON Rev. 4.0 09.02.2022 5 Fig. 9: Typ. Transient thermal impedance of IGBT1 & Diode2 Fig. 10: Typ. Diode2 forward characteristic, incl. RCC'+ EE' Fig. 11: Typ. Diode2 peak reverse recovery current Fig. 12: Typ. Diode2 recovery charge
6 Rev. 4.0 09.02.2022 © by SEMIKRON Fig. 15: Typ. IGBT2 & Diode1 turn-on /-off energy = f (IC) Fig. 16: Typ. IGBT2 & Diode1 turn-on / -off energy = f(RG) Fig. 17: Typ. IGBT2 transfer characteristic Fig. 18: Typ. IGBT2 gate charge characteristic
© by SEMIKRON Rev. 4.0 09.02.2022 7 Fig. 21: Transient thermal impedance of IGBT2 & Diode1 Fig. 22: Typ. Diode1 forward characteristic, incl. RCC'+ EE' Fig. 23: Typ. Diode1 peak reverse recovery current Fig. 24: Typ. Diode1 recovery charge
8 Rev. 4.0 09.02.2022 © by SEMIKRON Pinout and Dimensions Pinout
© by SEMIKRON Rev. 4.0 09.02.2022 9 This is an electrostatic discharge sensitive device (ESDS) due to international standard IEC 61340. *IMPORTANT INFORMATION AND WARNINGS The specifications of SEMIKRON products may not be considered as guarantee or assurance of product characteristics ("Beschaffenheitsgarantie"). The specifications of SEMIKRON products describe only the usual characteristics of products to be expected in typical applications, which may still vary depending on the specific application. Therefore, products must be tested for the respective application in advance. Application adjustments may be necessary. The user of SEMIKRON products is responsible for the safety of their applications embedding SEMIKRON products and must take adequate safety measures to prevent the applications from causing a physical injury, fire or other problem if any of SEMIKRON products become faulty. The user is responsible to make sure that the application design is compliant with all applicable laws, regulations, norms and standards. Except as otherwise explicitly approved by SEMIKRON in a written document signed by authorized representatives of SEMIKRON, SEMIKRON products may not be used in any applications where a failure of the product or any consequences of the use thereof can reasonably be expected to result in personal injury. No representation or warranty is given and no liability is assumed with respect to the accuracy, completeness and/or use of any information herein, including without limitation, warranties of non-infringement of intellectual property rights of any third party. SEMIKRON does not assume any liability arising out of the applications or use of any product; neither does it convey any license under its patent rights, copyrights, trade secrets or other intellectual property rights, nor the rights of others. SEMIKRON makes no representation or warranty of non-infringement or alleged non-infringement of intellectual property rights of any third party which may arise from applications. Due to technical requirements our products may contain dangerous substances. For information on the types in question please contact the nearest SEMIKRON sales office. This document supersedes and replaces all information previously supplied and may be superseded by updates. SEMIKRON reserves the right to make changes.