MBM29F800TA FUJITSU | Alldatasheet

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DS05-20841-4EFUJITSU SEMICONDUCTOR DATA SHEET FLASH MEMORY CMOS 8M (1M · 8/512K · 16) BIT MBM29F800TA -55/-70/-90/MBM29F800BA -55/-70/-90 n FEATURES

  • Single 5.0 V read, write, and erase Minimizes system level power requirements
  • Compatible with JEDEC-standard commands Uses same software commands as E2PROMs
  • Compatible with JEDEC-standard world-wide pinouts 48-pin TSOP(I) (Package suffix: PFTN – Normal Bend T ype, PFTR – Reversed Bend T ype) 44-pin SOP (Package suffix: PF)
  • Minimum 100,000 write/erase cycles
  • High performance 55 ns maximum access time
  • Sector erase architecture One 16K byte, two 8K bytes, one 32K byte, and fifteen 64K bytes. Any combination of sectors can be concurrently erased. Also supports full chip erase.
  • Boot Code Sector Architecture T = T op sector B = Bottom sector
  • Embedded EraseTM Algorithms Automatically pre-programs and erases the chip or any sector
  • Embedded Program TM Algorithms Automatically writes and verifies data at specified address
  • D a t a Polling and Toggle Bit feature for detection of program or erase cycle completion
  • Ready/Busy output (RY/BY) Hardware method for detection of program or erase cycle completion
  • Low Vcc write inhibit £ 3.2 V
  • Erase Suspend/Resume Suspends the erase operation to allow a read data in another sector within the same device
  • Hardware RESET pin Resets internal state machine to the read mode
  • Sector protection Hardware method disables any combination of sectors from write or erase operations
  • Temporary sector unprotection T emporary sector unprotection via the RESET pin. Embedded EraseTM and Embedded ProgramTM are trademarks of Advanced Micro Devices, Inc.

MBM29F800TA -55/-70/-90/MBM29F800BA -55/-70/-90 n PACKAGE Marking Side 48-pin TSOP(I) 44-pin SOP (FPT -48P-M20) (FPT -44P-M16)(FPT -48P-M19) Marking SideMarking Side

MBM29F800TA -55/-70/-90/MBM29F800BA -55/-70/-90 n GENERAL DESCRIPTION The MBM29F800T A/BA is a 8M-bit, 5.0 V-only Flash memory organized as 1M bytes of 8 bits each or 512K words of 16 bits each. The MBM29F800T A/BA is offered in a 48-pin TSOP(I) and 44-pin SOP packages. This device is designed to be programmed in-system with the standard system 5.0 V V CC supply. 12.0 V VPP is not required for write or erase operations. The devices can also be reprogrammed in standard EPROM programmers. The standard MBM29LV800T A/BA offers access times 55 ns and 90 ns, allowing operation of high-speed microprocessors without wait states. T o eliminate bus contention the device has separate chip enable (CE ), write enable (WE), and output enable (OE) controls. The MBM29F800T A/BA is pin and command set compatible with JEDEC standard E2PROMs. Commands are written to the command register using standard microprocessor write timings. Register contents serve as input to an internal state-machine which controls the erase and programming circuitry. Write cycles also internally latch addresses and data needed for the programming and erase operations. Reading data out of the devices is similar to reading from12.0 V Flash or EPROM devices. The MBM29F800T A/BA is programmed by executing the program command sequence. This will invoke the Embedded Program Algorithm which is an internal algorithm that automatically times the program pulse widths and verifies proper cell margin. T ypically, each sector can be programmed and verified in less than 0.5 seconds. Erase is accomplished by executing the erase command sequence. This will invoke the Embedded Erase Algorithm which is an internal algorithm that automatically preprograms the array if it is not already programmed before executing the erase operation. During erase, the device automatically times the erase pulse widths and verifies proper cell margin. Any individual sector is typically erased and verified in 1.0 second (if already completely preprogrammed.). The devices also features a sector erase architecture. The sector mode allows each sector to be erased and reprogrammed without affecting other sectors. The MBM29F800T A/BA is erased when shipped from the factory. The devices features single 5.0 V power supply operation for both read and write functions. Internally generated and regulated voltages are provided for the program and erase operations. A low V CC detector automatically inhibits write operations on the loss of power. The end of program or erase is detected by Data Polling of DQ7, by the T oggle Bit feature on DQ6, or the RY/BY output pin. Once the end of a program or erase cycle has been completed, the device internally resets to the read mode. Fujitsu’s Flash technology combines years of EPROM and E2PROM experience to produce the highest levels of quality, reliability, and cost effectiveness. The MBM29F800T A/BA memory electrically erase the entire chip or all bits within a sector simultaneously via Fowler-Nordhiem tunneling. The bytes/words are programmed one byte/word at a time using the EPROM programming mechanism of hot electron injection.

MBM29F800TA -55/-70/-90/MBM29F800BA -55/-70/-90 n FLEXIBLE SECTOR-ERASE ARCHITECTURE

  • One 16K byte, two 8K bytes, one 32K byte, and fifteen 64K bytes.
  • Individual-sector, multiple-sector, or bulk-erase capability.
  • Individual or multiple-sector protection is user definable. 64K byte 64K byte 64K byte 64K byte 64K byte 64K byte 64K byte 64K byte 64K byte 64K byte 64K byte 64K byte 64K byte 64K byte BFFFFH AFFFFH 9FFFFH 8FFFFH 7FFFFH 6FFFFH 5FFFFH 16K byte 8K byte 8K byte 32K byte 64K byte 64K byte 64K byte 64K byte 64K byte 64K byte 64K byte 64K byte 64K byte 64K byte FFFFFH FBFFFH F9FFFH F7FFFH EFFFFH DFFFFH CFFFFH MBM29F800TA Sector Architecture MBM29F800BA Sector Architecture 64K byte 64K byte 64K byte 64K byte 64K byte 64K byte 32K byte 8K byte 8K byte 16K byte 4FFFFH 3FFFFH 2FFFFH 1FFFFH 0FFFFH 00000H 8FFFFH 7FFFFH 6FFFFH 5FFFFH 4FFFFH 3FFFFH 2FFFFH FFFFFH EFFFFH DFFFFH CFFFFH BFFFFH AFFFFH 9FFFFH 1FFFFH 0FFFFH 07FFFH 05FFFH 03FFFH 00000H 47FFFH 3FFFFH 37FFFH 2FFFFH 27FFFH 1FFFFH 17FFFH 7FFFFH 77FFFH 6FFFFH 67FFFH 5FFFFH 57FFFH 4FFFFH 0FFFFH 07FFFH 03FFFH 02FFFH 01FFFH 00000H (·8) ( ·16) 5FFFFH 57FFFH 4FFFFH 47FFFH 3FFFFH 37FFFH 2FFFFH 7FFFFH 7DFFFH 7CFFFH 7BFFFH 77FFFH 6FFFFH 67FFFH 27FFFH 1FFFFH 17FFFH 0FFFFH 07FFFH 00000H (·8) ( ·16)

MBM29F800TA -55/-70/-90/MBM29F800BA -55/-70/-90 n PRODUCT LINE UP n BLOCK DIAGRAM Part No. MBM29F800TA/MBM29F800BA Ordering Part No. VCC = 5.0 V ± 10 % — -70 -90 Max. Address Access Time (ns) 55 70 90 Max. CE Access Time (ns) 55 70 90 Max. OE Access Time (ns) 30 30 40 VSS VCC WE CE A0 to A18 OE Erase Voltage Generator DQ 0 to DQ15 State Control Command Register Program Voltage Generator Low VCC Detector Address Latch X-Decoder Y-Decoder Cell Matrix Y-Gating Chip Enable Output Enable Logic Data Latch Input/Output Buffers STB STB Timer for A-1 BYTE RESET RY/BY Buffer RY/BY Program/Erase

MBM29F800TA -55/-70/-90/MBM29F800BA -55/-70/-90 n CONNECTION DIAGRAMS A15 A14 A13 A12 A11 A10 N.C. N.C. WE RESET N.C. N.C. RY/BY A18 A17 MBM29F800TA/MBM29F800BA Standard Pinout MBM29F800TA/MBM29F800BA Reverse Pinout TSOP(I) RY/BY A18 A17 CE VSS OE DQ 0 DQ 8 DQ 1 DQ 9 DQ 2 DQ 10 DQ 3 DQ 11 RESET WE A10 A11 A12 A13 A14 A15 A16 BYTE VSS DQ 15/A-1 DQ 7 DQ 14 DQ 6 DQ 13 DQ 5 DQ 12 DQ 4 VCC SOP (Top View) A16 BYTE VSS DQ 15/A-1 DQ 7 DQ 14 DQ 6 DQ 13 DQ 5 DQ 12 DQ 4 VCC DQ 11 DQ 3 DQ 10 DQ 2 DQ 9 DQ 1 DQ 8 DQ 0 OE VSS CE CE VSS OE DQ 0 DQ 8 DQ 1 DQ 9 DQ 2 DQ 10 DQ 3 DQ 11 VCC DQ 4 DQ 12 DQ 5 DQ 13 DQ 6 DQ 14 DQ 7 DQ 15/A-1 VSS BYTE A16 A17 A18 RY/BY N.C. N.C. RESET WE N.C. N.C. A A10 A11 A12 A13 A14 A15 (Marking Side) FPT-48P-M19 FPT-48P-M20 FPT-44P-M16 (Marking Side)

MBM29F800TA -55/-70/-90/MBM29F800BA -55/-70/-90 n LOGIC SYMBOL A0 to A18 WE RY/BY OE CE A-1 DQ 0 to DQ15 16 or 8 RESET BYTE Table 1 MBM29F800TA/BA Pin Configuration Pin Function Address Inputs Data Inputs/Outputs Chip Enable Output Enable Write Enable No Internal Connection Ready/Busy Output Device Ground Device Power Supply Hardware Reset Pin/ Temporary Sector Unprotection A -1, A0 to A18 DQ 0 to DQ15 CE OE WE RESET N.C. RY/BY Selects 8-bit or 16-bit modeBYTE VSS VCC

MBM29F800TA -55/-70/-90/MBM29F800BA -55/-70/-90 Legend: L = VIL, H = VIH, X = VIL or VIH, = Pulse input. See DC Characteristics for voltage levels. Notes: 1. Manufacturer and device codes may also be accessed via a command register write sequence. See T able 7. 2. Refer to the section on Sector Protection. 3. WE can be VIL if OE is VIL, OE at VIH initiates the write operations. Table 2 MBM29F800TA/BA User Bus Operation (BYTE = VIH) Operation CE OE WE A 0 A 1 A 6 A 9 DQ 0 to DQ15 RESET Auto-Select Manufacturer Code (1) L L H L L L V ID Code H Auto-Select Device Code (1) L L H H L L V ID Code H Read (3) L L H A 0 A1 A6 A9 D OUT H S t a n d b y HXXXXXX H I G H - Z H Output Disable L H H X X X X HIGH-Z H Write L H L A

0 A1 A6 A9 D IN H

Enable Sector Protection (2) L V ID XXL V ID XH Verify Sector Protection (2) L L H L H L V ID Code H T e m p o r a r y S e c t o r U n p r o t e c t i o n XXXXXXX X V ID R e s e t ( H a r d w a r e ) / S t a n d b y XXXXXXX H I G H - Z L Table 3 MBM29F800TA/BA User Bus Operation (BYTE = VIL) Operation CE OE WE DQ 15 /A-1 A 0 A 1 A 6 A 9 DQ 0 to DQ7 RESET A u t o - S e l e c t M a n u f a c t u r e r C o d e ( 1 ) LLHLLLL VID Code H Auto-Select Device Code (1) L L H L H L L V ID Code H Read (3) L L H A -1 A0 A1 A6 A9 D OUT H Standby H XXXXXXXH I G H - Z H O u t p u t D i s a b l e LHHXXXXXH I G H - Z H Write (Program/Erase) L H L A -1 A0 A1 A6 A9 D IN H Enable Sector Protection (2) L V ID XXHL V ID XH Verify Sector Protection (2) L L H L L H L V ID Code H T e m p o r a r y S e c t o r U n p r o t e c t i o n XXXXXXXX X V ID R e s e t ( H a r d w a r e ) / S t a n d b y XXXXXXXXH I G H - Z L

MBM29F800TA -55/-70/-90/MBM29F800BA -55/-70/-90 n ORDERING INFORMATION Standard Products Fujitsu standard products are available in several packages. The order number is formed by a combination of: MBM29F800 T A -55 PFTN DEVICE NUMBER/DESCRIPTION MBM29F800 8Mega-bit (1M · 8-Bit or 512K · 16-Bit) CMOS Flash Memory

5.0 V-only Read, Write, and Erase

PFTN = 48-Pin Thin Small Outline Package (TSOP) Standard Pinout PFTR = 48-Pin Thin Small Outline Package (TSOP) Reverse Pinout PF = 44-Pin Small Outline Package SPEED OPTION See Product Selector Guide A = Device Revision BOOT CODE SECTOR ARCHITECTURE T = T op sector B = Bottom sector

MBM29F800TA -55/-70/-90/MBM29F800BA -55/-70/-90 n FUNCTIONAL DESCRIPTION Read Mode The MBM29F800T A/BA has two control functions which must be satisfied in order to obtain data at the outputs. CE is the power control and should be used for a device selection. OE is the output control and should be used to gate data to the output pins if a device is selected. Address access time (tACC ) is equal to the delay from stable addresses to valid output data. The chip enable access time (tCE ) is the delay from stable addresses and stable CE to valid data at the output pins. The output enable access time is the delay from the falling edge of OE to valid data at the output pins (Assuming the addresses have been stable for at least tACC - tCE time). Standby Mode There are two ways to implement the standby mode on the MBM29F800T A/BA devices, one using both the CE and RESET pins; the other via the RESET pin only. When using both pins, a CMOS standby mode is achieved with CE and RESET inputs both held at VCC ± 0.3 V . Under this condition the current consumed is less than 5 mA. A TTL standby mode is achieved with CE and RESET pins held at VIH. Under this condition the current is reduced to approximately 1mA. During Embedded Algorithm operation, VCC Active current (ICC2 ) is required even CE = VIH. The device can be read with standard access time (tCE ) from either of these standby modes. When using the RESET pin only, a CMOS standby mode is achieved with RESET input held at VSS ± 0.3 V (CE = “H” or “L”). Under this condition the current is consumed is less than 5 mA. A TTL standby mode is achieved with RESET pin held at VIL, (CE= “H” or “L”). Under this condition the current required is reduced to approximately 1mA. Once the RESET pin is taken high, the device requires 500 ns of wake up time before outputs are valid for read access. In the standby mode the outputs are in the high impedance state, independent of the OE input. Output Disable With the OE input at a logic high level (VIH), output from the device is disabled. This will cause the output pins to be in a high impedance state. Autoselect The autoselect mode allows the reading out of a binary code from the device and will identify its manufacturer and type. This mode is intended for use by programming equipment for the purpose of automatically matching the devices to be programmed with its corresponding programming algorithm. This mode is functional over the entire temperature range of the device. T o activate this mode, the programming equipment must force V ID (11.5 V to 12.5 V) on address pin A9. T wo identifier bytes may then be sequenced from the devices outputs by toggling address A0 from VIL to VIH. All addresses are don't cares except A0, A1, A6, and A-1 (See T ables 4.1). The manufacturer and device codes may also be read via the command register, for instances when the MBM29F800T A/BA is erased or programmed in a system without access to high voltage on the A9 pin. The command sequence is illustrated in T able 7 (refer to Autoselect Command section). Byte 0 (A0 = VIL) represents the manufacturer’s code (Fujitsu = 04H) and A0 = VIH represents the device identifier code (MBM29F800T A = D6H and MBM29F800BA = 58H for ·8 mode; MBM29F800T A = 22D6H and MBM29F800BA = 2258H for ·16 mode). These two bytes/words are given in the tables 4.1 and 4.2. All identifiers for manufacturers and device will exhibit odd parity with DQ7 defined as the parity bit. In order to read the proper device codes when executing the autoselect, A1 must be VIL (See T ables 4.1 and 4.2).

MBM29F800TA -55/-70/-90/MBM29F800BA -55/-70/-90 *1: A-1 is for Byte mode. *2: Outputs 01H at protected sector addresses and outputs 00H at unprotected sector addresses. (B): Byte mode (W): Word mode Write Device erasure and programming are accomplished via the command register. The contents of the register serve as inputs to the internal state machine. The state machine outputs dictate the function of the device. The command register itself does not occupy any addressable memory location. The register is a latch used to store the commands, along with the address and data information needed to execute the command. The command register is written by bringing WE to VIL, while CE is at VIL and OE is at VIH. Addresses are latched on the falling edge of WE or CE, whichever happens later; while data is latched on the rising edge of WE or CE, whichever happens first. Standard microprocessor write timings are used. Refer to AC Write Characteristics and the Erase/Programming Waveforms for specific timing parameters. Sector Protection The MBM29F800T A/BA features hardware sector protection. This feature will disable both program and erase operations in any number of sectors (0 through 18). The sector protection feature is enabled using programming equipment at the user’s site. The device is shipped with all sectors unprotected. Table 4 .1 MBM29F800TA/BA Sector Protection Verify Autoselect Codes Type A 12 to A18 A 6 A 1 A 0 A -1*1 Code (HEX) Manufacture’s Code X V IL VIL VIL VIL 04H Device Code MBM29F800T A Byte XV IL VIL VIH VIL D6H Word X 22D6H MBM29F800BA Byte XV IL VIL VIH VIL 58H Word X 2258H Sector Protection Sector Addresses VIL VIH VIL VIL 01H*2 Table 4 .2 Expanded Autoselect Code Table Type Code DQ 15 DQ 14 DQ 13 DQ 12 DQ 11 DQ 10 DQ 9 DQ 8 DQ 7 DQ 6 DQ 5 DQ 4 DQ 3 DQ 2 DQ 1 DQ 0 Manufacture’s Code 04H A -1/ 0 0000000 0 0 0 00100 Device Code MBM29F800T A (B) D6H A -1 H I - Z H I - Z H I - Z H I - Z H I - Z H I - Z H I - Z 11010110 (W) 22D6H 00100010 1 1 0 10110 MBM29F800BA (B) 58H A -1 H I - Z H I - Z H I - Z H I - Z H I - Z H I - Z H I - Z 01011000 (W) 2258H 00100010 0 1 0 11000 Sector Protection 01H A -1/ 0 0000000 0 0 0 00001

MBM29F800TA -55/-70/-90/MBM29F800BA -55/-70/-90 T o activate this mode, the programming equipment must force VID on address pin A9 and control pin OE, (suggest VID = 11.5V), CE = VIL, and A6 = VIL. The sector addresses (A18, A17, A16, A15, A14, A13, and A12) should be set to the sector to be protected. T ables 5 and 6 define the sector address for each of the nineteen (19) individual sectors. Programming of the protection circuitry begins on the falling edge of the WE pulse and is terminated with the rising edge of the same. Sector addresses must be held constant during the WE pulse. See Figures 16 and 23 for sector protection waveforms and algorithm. T o verify programming of the protection circuitry, the programming equipment must force VID on address pin A9 with CE and OE at VIL and WE at VIH. Scanning the sector addresses (A18, A17, A16, A15, A14, A13, and A12) while (A6, A1, A0) = (0, 1, 0) will produce a logical “1” code at device output DQ0 for a protected sector. Otherwise the devices will read 00H for unprotected sector. In this mode, the lower order addresses, except for A0, A1, and A6 are DON’T CARES. Address locations with A1 = VIL are reserved for Autoselect manufacturer and device codes. A-1 requires to apply to VIL on byte mode. It is also possible to determine if a sector is protected in the system by writing an Autoselect command. Performing a read operation at the address location XX02H, where the higher order addresses (A18, A17, A16, A15, A14, A13, and A12) are the desired sector address will produce a logical “1” at DQ0 for a protected sector. See T ables 4.1 and 4.2 for Autoselect codes. Temporary Sector Unprotection This feature allows temporary unprotection of previously protected sectors of the MBM29F800T A/BA device in order to change data. The Sector Unprotection mode is activated by setting the RESET pin to high voltage (12 V). During this mode, formerly protected sectors can be programmed or erased by selecting the sector addresses. Once the 12 V is taken away from the RESET pin, all the previously protected sectors will be protected again. Refer to Figures 17 and 24.

MBM29F800TA -55/-70/-90/MBM29F800BA -55/-70/-90 Table 5 Sector Address Tables (MBM29F800TA) Sector Address A 18 A 17 A 16 A 15 A 14 A 13 A 12 Address Range SA0 0 0 0 0 X X X 00000H to 0FFFFH SA1 0 0 0 1 X X X 10000H to 1FFFFH SA2 0 0 1 0 X X X 20000H to 2FFFFH SA3 0 0 1 1 X X X 30000H to 3FFFFH SA4 0 1 0 0 X X X 40000H to 4FFFFH SA5 0 1 0 1 X X X 50000H to 5FFFFH SA6 0 1 1 0 X X X 60000H to 6FFFFH SA7 0 1 1 1 X X X 70000H to 7FFFFH SA8 1 0 0 0 X X X 80000H to 8FFFFH SA9 1 0 0 1 X X X 90000H to 9FFFFH SA10 1 0 1 0 X X X A0000H to AFFFFH SA11 1 0 1 1 X X X B0000H to BFFFFH SA12 1 1 0 0 X X X C0000H to CFFFFH SA13 1 1 0 1 X X X D0000H to DFFFFH SA14 1 1 1 0 X X X E0000H to EFFFFH SA15 1 1 1 1 0 X X F0000H to F7FFFH SA16 1 1 1 1 1 0 0 F8000H to F9FFFH S A 1 7 1111101 F A 0 0 0 H t o F B F F F H S A 1 8 111111X F C 0 0 0 H t o F F F F F H

MBM29F800TA -55/-70/-90/MBM29F800BA -55/-70/-90 Table 6 Sector Address Tables (MBM29F800BA) Sector Address A 18 A 17 A 16 A 15 A 14 A 13 A 12 Address Range SA0 0 0 0 0 0 0 X 00000H to 03FFFH SA1 0 0 0 0 0 1 0 04000H to 05FFFH SA2 0 0 0 0 0 1 1 06000H to 07FFFH SA3 0 0 0 0 1 X X 08000H to 0FFFFH SA4 0 0 0 1 X X X 10000H to 1FFFFH SA5 0 0 1 0 X X X 20000H to 2FFFFH SA6 0 0 1 1 X X X 30000H to 3FFFFH SA7 0 1 0 0 X X X 40000H to 4FFFFH SA8 0 1 0 1 X X X 50000H to 5FFFFH SA9 0 1 1 0 X X X 60000H to 6FFFFH SA10 0 1 1 1 X X X 70000H to 7FFFFH SA11 1 0 0 0 X X X 80000H to 8FFFFH SA12 1 0 0 1 X X X 90000H to 9FFFFH SA13 1 0 1 0 X X X A0000H to AFFFFH SA14 1 0 1 1 X X X B0000H to BFFFFH SA15 1 1 0 0 X X X C0000H to CFFFFH SA16 1 1 0 1 X X X D0000H to DFFFFH SA17 1 1 1 0 X X X E0000H to EFFFFH SA18 1 1 1 1 X X X F0000H to FFFFFH

MBM29F800TA -55/-70/-90/MBM29F800BA -55/-70/-90 Notes:1. Address bits A18 to A11 = X = “H” or “L” for all address commands except or Program Address (P A) and Sector Address (SA). 2. Bus operations are defined in T ables 2 and 3. 3. RA = Address of the memory location to be read. P A = Address of the memory location to be programmed. Addresses are latched on the falling edge of the WE pulse. SA = Address of the sector to be erased. The combination of A18, A17, A16, A15, A14, A13, and A12 will uniquely select any sector. 4. RD = Data read from location RA during read operation. PD = Data to be programmed at location P A. Data is latched on the falling edge of WE. 5. The system should generate the following address patterns: Word Mode: 555H or 2AAH to addresses A0 to A10 Byte Mode: AAAH or 555H to addresses A-1 to A10 6. Both Read/Reset commands are functionally equivalent, resetting the device to the read mode. Command Definitions Device operations are selected by writing specific address and data sequences into the command register. Writing incorrect address and data values or writing them in the improper sequence will reset the device to the read mode. T able 7 defines the valid register command sequences. Note that the Erase Suspend (B0H) and Erase Resume (30H) commands are valid only while the Sector Erase operation is in progress. Moreover both Read/Reset commands are functionally equivalent, resetting the device to the read mode. Please note that commands are always written at DQ 0 to DQ7 and DQ8 to DQ15 bits are ignored. Read/Reset Command The read or eset operation is initiated by writing the Read/Reset command sequence into the command register. Microprocessor read cycles retrieve array data from the memory. The devices remain enabled for reads until the command register contents are altered. Table 7 MBM29F800TA/BA Command Definitions Command Sequence Bus Write Cycles Req'd First Bus Write Cycle Second Bus Write Cycle Third Bus Write Cycle Fourth Bus Read/Write Cycle Fifth Bus Write Cycle Sixth Bus Write Cycle Addr Data Addr Data Addr Data Addr Data Addr Data Addr Data Read/Reset Word 3 555H AAH 2AAH 55H 555H F0H RA RD — — — —Byte AAAH 555H AAAH Autoselect Word 3 555H AAH 2AAH 55H 555H 9 0 H ——————Byte AAAH 555H AAAH Byte/Word Program Word 4 555H AAH 2AAH 55H 555H A0H PA PD — — — —Byte AAAH 555H AAAH Chip Erase Word 6 555H AAH 2AAH 55H 555H 80H 555H AAH 2AAH 55H 555H 10HByte AAAH 555H AAAH AAAH 555H AAAH Sector Erase Word 6 555H AAH 2AAH 55H 555H 80H 555H AAH 2AAH 55H SA 30HByte AAAH 555H AAAH AAAH 555H Sector Erase Suspend Erase can be suspended during sector erase with Addr (“H” or “L”). Data (B0H) Sector Erase Resume Erase can be resumed after suspend with Addr (“H” or “L”). Data (30H)

MBM29F800TA -55/-70/-90/MBM29F800BA -55/-70/-90 The device will automatically power-up in the read/reset state. In this case, a command sequence is not required to read data. Standard microprocessor read cycles will retrieve array data. This default value ensures that no spurious alteration of the memory content occurs during the power transition. Refer to the AC Read Characteristics and Waveforms for the specific timing parameters. Autoselect Command Flash memories are intended for use in applications where the local CPU alters memory contents. As such, manufacture and device codes must be accessible while the devices reside in the target system. PROM programmers typically access the signature codes by raising A 9 to a high voltage. However, multiplexing high voltage onto the address lines is not generally desired system design practice. The device contains an Autoselect command operation to supplement traditional PROM programming methodology. The operation is initiated by writing the Autoselect command sequence into the command register. Following the command write, a read cycle from address XX00H retrieves the manufacture code of 04H. A read cycle from address XX01H for ·16 (XX02H for ·8) returns the device code (MBM29F800T A = D6H and MBM29F800BA = 58H for ·8 mode; MBM29F800T A = 22D6H and MBM29F800BA = 2258H for ·16 mode). (See T ables 4.1 and 4.2.) All manufacturer and device codes will exhibit odd parity with DQ 7 defined as the parity bit. Sector state (protection or unprotection) will be informed by address XX02H for ·16 (XX04H for ·8). Scanning the sector addresses (A18, A17, A16, A15, A14, A13, and A12) while (A6, A1, A0) = (0, 1, 0) will produce a logical “1” at device output DQ0 for a protected sector. The programming verification should be perform margin mode on the protected sector (See T ables 2 and 3). T o terminate the operation, it is necessary to write the Read/Reset command sequence into the register, and also to write the Autoselect command during the operation, execute it after writing Read/Reset command sequence. Byte/Word Programming The device is programmed on a byte-by-byte (or word-by-word) basis. Programming is a four bus cycle operation. There are two “unlock” write cycles. These are followed by the program set-up command and data write cycles. Addresses are latched on the falling edge of CE or WE, whichever happens later and the data is latched on the rising edge of CE or WE, whichever happens first. The rising edge of CE or WE (whichever happens first) begins programming. Upon executing the Embedded ProgramTM Algorithm command sequence, the system is not required to provide further controls or timings. The device will automatically provide adequate internally generated program pulses and verify the programmed cell margin. The automatic programming operation is completed when the data on DQ 7 is equivalent to data written to this bit at which time the devices return to the read mode and addresses are no longer latched (See T able 8, Hardware Sequence Flags) Therefore, the devices require that a valid address to the devices be supplied by the system at this particular instance of time. Hence, Data Polling must be performed at the memory location which is being programmed. Any commands written to the chip during this period will be ignored. If hardware reset occurs during the programming operation, it is impossible to guarantee the data are being written. Programming is allowed in any sequence and across sector boundaries. Beware that a data “0” cannot be programmed back to a “1”. Attempting to do so may either hang up the device or result in an apparent success according to the data polling algorithm but a read from Read/Reset mode will show that the data is still “0”. Only erase operations can convert “0”s to “1”s. Figure 19 illustrates the Embedded Programming Algorithm TM using typical command strings and bus operations. Chip Erase Chip erase is a six bus cycle operation. There are two “unlock” write cycles. These are followed by writing the “set-up” command. T wo more “unlock” write cycles are then followed by the chip erase command.

MBM29F800TA -55/-70/-90/MBM29F800BA -55/-70/-90 When the Erase Suspend command is written during the Sector Erase operation, the device will take a maximum of 20 ms to suspend the erase operation. When the device has entered the erase-suspended mode, the RY/BY output pin and the DQ7 bit will be at logic “1”, and DQ6 will stop toggling. The user must use the address of the erasing sector for reading DQ6 and DQ7 to determine if the erase operation has been suspended. Further writes of the Erase Suspend command are ignored. When the erase operation has been suspended, the device defaults to the erase-suspend-read mode. Reading data in this mode is the same as reading from the standard read mode except that the data must be read from sectors that have not been erase-suspended. Successively reading from the erase-suspended sector while the device is in the erase-suspend-read mode will cause DQ 2 to toggle. (See the section on DQ2). After entering the erase-suspend-read mode, the user can program the device by writing the appropriate command sequence for Program. This Program mode is known as the erase-suspend-program mode. Again, programming in this mode is the same as programming in the regular Program mode except that the data must be programmed to sectors that are not erase-suspended. Successively reading from the erase-suspended sector while the device is in the erase-suspend-program mode will cause DQ 2 to toggle. The end of the erase-suspended Program operation is detected by the RY/BY output pin, Data polling of DQ7, or by the T oggle Bit I (DQ6) which is the same as the regular Program operation. Note that DQ7 must be read from the Program address while DQ6 can be read from any address. T o resume the operation of Sector Erase, the Resume command (30H) should be written. Any further writes of the Resume command at this point will be ignored. Another Erase Suspend command can be written after the chip has resumed erasing. Write Operation Status Notes:1. Performing successive read operations from any address will cause DQ 6 to toggle. 2. Reading the byte address being programmed while in the erase-suspend program mode will indicate logic “1” at the DQ2 bit. However, successive reads from the erase-suspended sector will cause DQ2 to toggle. 3. DQ 0 and DQ1 are reserve pins for future use. DQ4 is Fujitsu internal use only. 4. DQ 8 to DQ15 are “DON’T CARES” because there is for · 16 mode. Table 8 Hardware Sequence Flags Status DQ 7 DQ 6 DQ 5 DQ 3 DQ 2 In Progress Embedded Program Algorithm DQ 7 Toggle 0 0 1 Embedded Erase Algorithm 0 Toggle 0 1 Toggle Erase Suspended Mode Erase Suspend Read (Erase Suspended Sector) 110 0 T o g g l e Erase Suspend Read (Non-Erase Suspended Sector) Data Data Data Data Data Erase Suspend Program (Non-Erase Suspended Sector) DQ 7 Toggle (Note 1) 00 1 (Note 2) Exceeded Time Limits Embedded Program Algorithm DQ

7 Toggle 1 0 1

Embedded Erase Algorithm 0 Toggle 1 1 N/A Erase Suspended Mode Erase Suspend Program (Non-Erase Suspended Sector) DQ 7 Toggle 1 0 N/A

MBM29F800TA -55/-70/-90/MBM29F800BA -55/-70/-90 DQ 7 Data Polling The MBM29F800T A/BA device feature Data Polling as a method to indicate to the host that the Embedded Algorithms are in progress or completed. During the Embedded Program Algorithm an attempt to read the device will produce the complement of the data last written to DQ 7. Upon completion of the Embedded Program Algorithm, an attempt to read the device will produce the true data last written to DQ7. During the Embedded Erase Algorithm, an attempt to read the device will produce a “0” at the DQ7 output. Upon completion of the Embedded Erase Algorithm an attempt to read the device will produce a “1” at the DQ7 output. The flowchart for Data Polling (DQ7) is shown in Figure 21. For chip erase and sector erase, the Data Polling is valid after the rising edge of the sixth WE pulse in the six write pulse sequence. Data Polling must be performed at sector address within any of the sectors being erased and not a protected sector. Otherwise, the status may not be valid. Once the Embedded Algorithm operation is close to being completed, the MBM29F800T A/BA data pins (DQ 7) may change asynchronously while the output enable (OE) is asserted low. This means that the device is driving status information on DQ7 at one instant of time and then that byte’s valid data at the next instant of time. Depending on when the system samples the DQ7 output, it may read the status or valid data. Even if the device has completed the Embedded Algorithm operation and DQ 7 has a valid data, the data outputs on DQ0 to DQ6 may be still invalid. The valid data on DQ0 to DQ7 will be read on the successive read attempts. The Data Polling feature is only active during the Embedded Programming Algorithm, Embedded Erase Algorithm or sector erase time-out (See T able 8). See Figure 9 for the Data Polling timing specifications and diagrams. DQ 6 Toggle Bit I The MBM29F800T A/BA also feature the “T oggle Bit I” as a method to indicate to the host system that the Embedded Algorithms are in progress or completed. During an Embedded Program or Erase Algorithm cycle, successive attempts to read (OE toggling) data from the device will result in DQ6 toggling between one and zero. Once the Embedded Program or Erase Algorithm cycle is completed, DQ6 will stop toggling and valid data will be read on the next successive attempts. During programming, the T oggle Bit I is valid after the rising edge of the fourth WE pulse in the four write pulse sequence. For chip erase and sector erase, the T oggle Bit I is valid after the rising edge of the sixth WE pulse in the six write pulse sequence. The T oggle Bit I is active during the sector time out. In programming, if the sector being written to is protected, the toggle bit l will toggle for about 2 µs and then stop toggling without the data having changed. In erase, the device will erase all the selected sectors except for the ones that are protected. If all selected sectors are protected, the chip will toggle the toggle bit for about 100 µs and then drop back into read mode, having changed none of the data. Either CE or OE toggling will cause the DQ6 to toggle. In addition, an Erase Suspend/Resume command will cause the DQ6 to toggle. See Figure 10 for the T oggle Bit I timing specifications and diagrams. DQ 5 Exceeded Timing Limits DQ 5 will indicate if the program or erase time has exceeded the specified limits (internal pulse count). Under these conditions DQ5 will produce a “1”. This is a failure condition which indicates that the program or erase cycle was not successfully completed. Data Polling is the only operating function of the devices under this condition. The CE circuit will partially power down the device under these conditions (to approximately 2 mA). The OE and WE pins will control the output disable functions as described in T ables 2 and 3.

MBM29F800TA -55/-70/-90/MBM29F800BA -55/-70/-90 The DQ5 failure condition may also appear if a user tries to program a non blank location without erasing. In this case the device locks out and never complete the Embedded Algorithm operation. Hence, the system never reads a valid data on DQ7 bit and DQ6 never stops toggling. Once the device has exceeded timing limits, the DQ 5 bit will indicate a “1.” Please note that this is not a device failure condition since the device was incorrectly used. If this occurs, rest the device with command sequence. DQ 3 Sector Erase Timer After the completion of the initial sector erase command sequence the sector erase time-out will begin. DQ3 will remain low until the time-out is complete. Data Polling and T oggle Bit are valid after the initial sector erase command sequence. If Data Polling or the T oggle Bit I indicates the device has been written with a valid erase command, DQ3 may be used to determine if the sector erase timer window is still open. If DQ3 is high (“1”) the internally controlled erase cycle has begun; attempts to write subsequent commands to the device will be ignored until the erase operation is completed as indicated by Data Polling or T oggle Bit I. If DQ3 is low (“0”), the device will accept additional sector erase commands. T o insure the command has been accepted, the system software should check the status of DQ 3 prior to and following each subsequent sector erase command. If DQ3 were high on the second status check, the command may not have been accepted. Refer to T able 8: Hardware Sequence Flags. DQ 2 Toggle Bit II This toggle bit II, along with DQ6, can be used to determine whether the device is in the Embedded Erase Algorithm or in Erase Suspend. Successive reads from the erasing sector will cause DQ2 to toggle during the Embedded Erase Algorithm. If the device is in the erase-suspended-read mode, successive reads from the erase-suspended sector will cause DQ2 to toggle. When the device is in the erase-suspended-program mode, successive reads from the byte address of the non-erase suspended sector will indicate a logic “1” at the DQ 2 bit. DQ 6 is different from DQ2 in that DQ6 toggles only when the standard program or Erase, or Erase Suspend Program operation is in progress. The behavior of these two status bits, along with that of DQ7, is summarized as follows: Notes:1. These status flags apply when outputs are read from a sector that has been erase-suspended. 2. These status flags apply when outputs are read from the byte address of the non-erase suspended sector. For example, DQ2 and DQ6 can be used together to determine the erase-suspend-read mode (DQ2 toggles while DQ 6 does not). See also T able 8 and Figure 22. Furthermore, DQ2 can also be used to determine which sector is being erased. When the device is in the erase mode, DQ2 toggles if this bit is read from the erasing sector. Mode DQ 7 DQ 6 DQ 2 Program DQ 7 toggles 1 Erase 0 toggles toggles Erase Suspend Read (Erase-Suspended Sector) (Note 1) 1 1 toggles Erase Suspend Program DQ 7 (Note 2) toggles 1 (Note 2)

MBM29F800TA -55/-70/-90/MBM29F800BA -55/-70/-90 RY/BY Ready/Busy The MBM29F800T A/BA provides a RY/BY open-drain output pin as a way to indicate to the host system that the Embedded Algorithms are either in progress or has been completed. If the output is low, the device is busy with either a program or erase operation. If the output is high, the device is ready to accept any read/write or erase operation. When the RY/BY pin is low, the device will not accept any additional program or erase commands. If the MBM29F800T A/BA is placed in an Erase Suspend mode, the RY/BY output will be high. Also, since this is an open drain output, many RY/BY pins can be tied together in parallel with a pull up resistor to VCC . During programming, the RY/BY pin is driven low after the rising edge of the fourth WE pulse. During an erase operation, the RY/BY pin is driven low after the rising edge of the sixth WE pulse. The RY/BY pin will indicate a busy condition during the RESET pulse. Refer to Figure 11 and 12 for a detailed timing diagram. Since this is an open-drain output, several RY/BY pins can be tied together in parallel with a pull-up resistor to VCC . RESET Hardware Reset The MBM29F800T A/BA device may be reset by driving the RESET pin to VIL. The RESET pin has a pulse requirement and has to be kept low (VIL) for at least 500 ns in order to properly reset the internal state machine. Any operation in the process of being executed will be terminated and the internal state machine will be reset to the read mode 20 ms after the RESET pin is driven low. Furthermore, once the RESET pin goes high, the device requires time of tRH before it will allow read access. When the RESET pin is low, the device will be in the standby mode for the duration of the pulse and all the data output pins will be tri-stated. If a hardware reset occurs during a program or erase operation, the data at that particular location will be corrupted. Please note that the RY/BY output signal should be ignored during the RESET pulse. Refer to Figure 12 for the timing diagram. Refer to T emporary Sector Unprotection for additional functionality. If hardware reset occurs during Embedded Erase Algorithm, there is a possibility that the erasing sector(s) cannot be used. Byte/Word Configuration The BYTE pin selects the byte (8-bit) mode or word (16-bit) mode for the MBM29F800T A/BA device. When this pin is driven high, the device operates in the word (16-bit) mode. The data is read and programmed at DQ0 to DQ 15. When this pin is driven low, the device operates in byte (8-bit) mode. Under this mode, the DQ15/A-1 pin becomes the lowest address bit and DQ8 to DQ14 bits are tri-stated. However, the command bus cycle is always an 8-bit operation and hence commands are written at DQ0 to DQ7 and the DQ8 to DQ15 bits are ignored. Refer to Figures 13, 14 and 15 for the timing diagram. Data Protection The MBM29F800T A/BA are designed to offer protection against accidental erasure or programming caused by spurious system level signals that may exist during power transitions. During power up the device automatically resets the internal state machine in the read mode. Also, with its control register architecture, alteration of the memory contents only occurs after successful completion of specific multi-bus cycle command sequences. The device also incorporate several features to prevent inadvertent write cycles resulting form V CC power-up and power-down transitions or system noise. Low V CC Write Inhibit T o avoid initiation of a write cycle during VCC power-up and power-down, a write cycle is locked out for VCC less than 3.2 V (typically 3.7 V). If VCC < VLKO , the command register is disabled and all internal program/erase circuits are disabled. Under this condition the device will reset to the read mode. Subsequent writes will be ignored until the V CC level is greater than VLKO . It is the users responsibility to ensure that the control pins are logically correct to prevent unintentional writes when VCC is above 3.2 V . If Embedded Erase Algorithm is interrupted, there is possibility that the erasing sector(s) cannot be used.

MBM29F800TA -55/-70/-90/MBM29F800BA -55/-70/-90 Write Pulse “Glitch” Protection Noise pulses of less than 5 ns (typical) on OE, CE, or WE will not initiate a write cycle. Logical Inhibit Writing is inhibited by holding any one of OE = VIL, CE = VIH, or WE = VIH. T o initiate a write cycle CE and WE must be a logical zero while OE is a logical one. Power-Up Write Inhibit Power-up of the device with WE = CE = VIL and OE = VIH will not accept commands on the rising edge of WE. The internal state machine is automatically reset to the read mode on power-up.

MBM29F800TA -55/-70/-90/MBM29F800BA -55/-70/-90 n ABSOLUTE MAXIMUM RATINGS Notes:1. Minimum DC voltage on input or I/O pins are –0.5 V . During voltage transitions, inputs may negative overshoot VSS to –2.0 V for periods of up to 20 ns. Maximum DC voltage on output and I/O pins are VCC +0.5 V . During voltage transitions, outputs may positive overshoot to VCC +2.0 V for periods of up to 20 ns. 2. Minimum DC input voltage on A9, OE, and RESET pins are –0.5 V . During voltage transitions, A9, OE, and RESET pins may negative overshoot VSS to –2.0 V for periods of up to 20 ns. Maximum DC input voltage on A9, OE, and RESET pins are +13.0 V which may positive overshoot to +14.0 V for periods of up to 20 ns. Voltage difference between input voltage and power supply. (VIN - VCC ) do not exceed 9 V . WARNING: Semiconductor devices can be permanently damaged by application of stress (voltage, current, temperature, etc.) in excess of absolute maximum ratings. Do not exceed these ratings. n RECOMMENDED OPERATING RANGES VCC Supply Voltages Operating ranges define those limits between which the functionality of the devices are guaranteed. WARNING: The recommended operating conditions are required in order to ensure the normal operation of the semiconductor device. All of the device’s electrical characteristics are warranted when the device is operated within these ranges. Always use semiconductor devices within their recommended operating condition ranges. Operation outside these ranges may adversely affect reliability and could result in device failure. No warranty is made with respect to uses, operating conditions, or combinations not represented on the data sheet. Users considering application outside the listed conditions are advised to contact their FUJITSU representatives beforehand.

MBM29F800TA -55/-70/-90/MBM29F800BA -55/-70/-90 n DC CHARACTERISTICS Notes:1. The ICC current listed includes both the DC operating current and the frequency dependent component (at 6 MHz). The frequency component typically is 2 mA/MHz, with OE at VIH. 2. ICC active while Embedded Algorithm (program or erase) is in progress. 3. Applicable to sector protection function. 4. (V ID – VCC ) do not exceed 9 V . Parameter Symbol Parameter Description Test Conditions Min. Max. Unit ILI Input Leakage Current V IN = VSS to VCC , VCC = VCC Max. –1.0 +1.0 µA ILO Output Leakage Current V OUT = VSS to VCC , VCC = VCC Max. –1.0 +1.0 µA ILIT A9, OE, RESET Inputs Leakage Current VCC = VCC Max. A9, OE, RESET = 12.5 V —5 0 µ A ICC1 VCC Active Current (Note 1) CE = VIL, OE = VIH Byte mA Word 45 ICC2 VCC Active Current (Note 2) CE = VIL, OE = VIH —5 0 m A ICC3 VCC Current (Standby) VCC = VCC Max., CE = VIH, RESET = VIH —1 m A VCC = VCC Max., CE = VCC – 0.3 V , RESET = VCC – 0.3 V —5 µ A ICC4 VCC Current (Standby, Reset) VCC = VCC Max., RESET = VIL —1 m A VCC = VCC Max., RESET = VSS – 0.3 V —5 µ A VIL Input Low Level — –0.5 0.8 V VIH Input High Level — 2.0 V CC + 0.5 V VID Voltage for Autoselect and Sector Protection 9, OE, RESET) (Note 3, 4) — 11.5 12.5 V VOL Output Low Voltage Level I OL = 5.8mA, VCC = VCC Min. — 0.45 V VOH1 Output High Voltage Level IOH = –2.5 mA, VCC = VCC Min. 2.4 — V VOH2 IOH = –100 µA V CC – 0.4 — V VLKO Low VCC Lock-Out Voltage — 3.2 4.2 V

MBM29F800TA -55/-70/-90/MBM29F800BA -55/-70/-90 n AC CHARACTERISTICS

  • Read Only Operations Characteristics Note:1. T est Conditions: Output Load: 1 TTL gate and 30 pF Input rise and fall times: 5 ns Input pulse levels: 0.0 V to 3.0 V Timing measurement reference level Input: 1.5 V Output: 1.5 V Parameter Symbols Description Test Setup MBM29F800TA/BA Unit JEDEC Standard -55 (Note1) -70 (Note2) -90 (Note2) t AVAV tRC Read Cycle Time — Min. 55 70 90 ns tAVQV tACC Address to Output Delay CE = VIL OE = VIL Max. 55 70 90 ns tELQV tCE Chip Enable to Output Delay OE = VIL Max. 55 70 90 ns tGLQV tOE Output Enable to Output Delay — Max. 30 30 40 ns tEHQZ tDF Chip Enable to Output High-Z — Max. 15 20 20 ns tGHQZ tDF Output Enable to Output High-Z — Max. 15 20 20 ns tAXQX tOH Output Hold Time From Addresses, CE or OE, Whichever Occurs First —M i n .0 0 0 n s —t READY RESET Pin Low to Read Mode — Max. 20 20 20 ms — tELFL tELFH CE or BYTE Switching Low or High — Max. 5 5 5 ns Figure 4 Test Conditions C L 5.0 V Diodes = IN3064 or Equivalent 2.7 kW Device Under Test IN3064 or Equivalent 6.2 kW Notes:1. CL = 30 pF including jig capacitance (MBM29F800T A/BA-55) 2. CL = 100 pF including jig capacitance (MBM29F800T A/BA-70/-90) Note:2. T est Conditions: Output Load: 1 TTL gate and 100 pF Input rise and fall times: 5 ns Input pulse levels: 0.45 V to 2.4 V Timing measurement reference level Input: 0.8 V and 2.0 V Output: 0.8 V and 2.0 V

MBM29F800TA -55/-70/-90/MBM29F800BA -55/-70/-90

  • Write/Erase/Program Operations (Continued) Parameter Symbols

Description

JEDEC Standard -55 -70 -90 tAVAV tWC Write Cycle Time Min. 55 70 90 ns tAVWL tAS Address Setup Time Min. 0 0 0 ns tWLAX tAH Address Hold Time Min. 40 45 45 ns tDVWH tDS Data Setup Time Min. 25 30 45 ns tWHDX tDH Data Hold Time Min. 0 0 0 ns —t OES Output Enable Setup Time Min. 0 0 0 ns —t OEH Output Enable Hold Time Read Min. 0 0 0 ns T oggle and Data Polling Min. 10 10 10 ns tGHWL tGHWL Read Recover Time Before Write Min. 0 0 0 ns tGHEL tGHEL Read Recover Time Before Write Min. 0 0 0 ns tELWL tCS CE Setup Time Min. 0 0 0 ns tWLEL tWS WE Setup Time Min. 0 0 0 ns tWHEH tCH CE Hold Time Min. 0 0 0 ns tEHWH tWH WE Hold Time Min. 0 0 0 ns tWLWH tWP Write Pulse Width Min. 30 35 45 ns tELEH tCP CE Pulse Width Min. 30 35 45 ns tWHWL tWPH Write Pulse Width High Min. 20 20 20 ns tEHEL tCPH CE Pulse Width High Min. 20 20 20 ns tWHWH1 tWHWH1 Byte Programming Operation Typ. 8 8 8 µs tWHWH2 tWHWH2 Sector Erase Operation (Note 1) Typ. 1 1 1 sec Max. 8 8 8 sec —t VCS VCC Setup Time Min. 50 50 50 µs —t VIDR RiseTime to VID Min. 500 500 500 ns —t VLHT Voltage T ransition Time (Note 2) Min. 4 4 4 µs —t WPP Write Pulse Width (Note 2) Min. 100 100 100 µs —t OESP OE Setup Time to WE Active (Note 2) Min. 4 4 4 µs —t CSP CE Setup Time to WE Active (Note 2) Min. 4 4 4 µs —t RB Recover Time from RY/BY Min. 0 0 0 ns

MBM29F800TA -55/-70/-90/MBM29F800BA -55/-70/-90 (Continued) Notes:1. This does not include the preprogramming time. 2. These timing is for Sector Protection operation. Parameter Symbols JEDEC Standard -55 -70 -90 —t RP RESET Pulse Width Min. 500 500 500 ns —t RH RESET Hold Time Before Read Min. 50 50 50 ns —t FLQZ BYTE Switching Low to Output HIGH-Z Max. 30 30 40 ns —t FHQV BYTE Switching High to Output Active Min. 30 30 40 ns —t BUSY Program/Erase Valid to RY/BY Delay Max. 55 70 90 ns —t EOE Delay Time from Embedded Output Enable Max. 30 30 40 ns

MBM29F800TA -55/-70/-90/MBM29F800BA -55/-70/-90 n SWITCHING WAVEFORMS

  • Key to Switching Waveforms WE OE CE tACC tDF tOH tCE tOE Outputs tRC Addresses Addresses Stable High-Z Output Valid High-Z tOEH Figure 5 AC Waveforms for Read Operations WAVEFORM INPUTS OUTPUTS Must Be Steady May Change from H to L May Change from L to H “H” or “L” Any Change Permitted Does Not Apply Will Be Steady Will Be Changing from H to L Will Be Changing from L to H Changing State Unknown Center Line is High- Impedance “Off” State

MBM29F800TA -55/-70/-90/MBM29F800BA -55/-70/-90 Notes:1. P A is address of the memory location to be programmed 2. PD is data to be programmed at byte address. 3. DQ7 is the output of the complement of the data written to the device. 4. DOUT is the output of the data written to the device. 5. Figure indicates last two bus cycles out of four bus cycle sequence. 6. These waveforms are for the · 16 mode. Figure 6 AC Waveforms for Alternate WE Controlled Program Operations tGHWL tWP tDF tDS tWHWH1 tWC tAH 5.0 V CE OE tRC Addresses Data tAS tOE tWPHtCS tDH DQ 7PDA0H D OUT tCE WE 555H PA PA tOH Data Polling3rd Bus Cycle tCH D OUT

MBM29F800TA -55/-70/-90/MBM29F800BA -55/-70/-90 Figure 7 AC Waveforms for Alternate CE Controlled Program Operations Notes:1. P A is address of the memory location to be programmed. 2. PD is data to be programmed at byte address. 3. DQ7 is the output of the complement of the data written to the device. 4. DOUT is the output of the data written to the device. 5. Figure indicates last two bus cycles out of four bus cycle sequence. 6. These waveforms are for the · 16 mode. (The addresses differ from · 8 mode.) tDS tWHWH1 tWC tAH 5.0 V WE OE Addresses Data tAS tCPH tWS tDH DQ 7PDA0H D OUT CE 555H PA PA Data Polling tGHEL tWH 3rd Bus Cycle tCP

MBM29F800TA -55/-70/-90/MBM29F800BA -55/-70/-90 Figure 8 AC Waveforms Chip/Sector Erase Operations Notes:1. SA is the sector address for Sector Erase. Addresses = 555H (Word), AAAH (Byte) for Chip Erase. 2. These waveforms are for the · 16 mode. ( The addresses differ from · 8 mode.) tGHWL tDS VCC CE OE Addresses Data tDH WE tAH 2AAH 555H 555H 2AAH SA tWPH tCS tWP tVCS tAS 555H AAH 55H 80H AAH 55H 10H/30H tCH

MBM29F800TA -55/-70/-90/MBM29F800BA -55/-70/-90 Figure 4 AC Waveforms for Sector Protection Timing Diagram SAX = Sector Address for initial sector SAY = Sector Address for next sector Note: A-1 is VIL on byte mode. tVLHT SAX SAY VID 5 V OE VID 5 V tVLHTtOESP tWPP tCSP WE CE tOE 01HData A18, A17, A16 tVLHT A15, A14 A13, A12 tVLHT tVLHT VCC

MBM29F800TA -55/-70/-90/MBM29F800BA -55/-70/-90 Figure 2 Embedded ProgramTM Algorithm EMBEDDED ALGORITHMS * : The sequence is applied for · 16 mode. The addresses differ from · 8 mode. No Yes Start Program Command Sequence* (Address/Command): 555H/AAH 2AAH/55H 555H/A0H Write Program Command Sequence (See Below) Data Polling Device Increment Address Last Address Programming Completed Program Address/Program Data

MBM29F800TA -55/-70/-90/MBM29F800BA -55/-70/-90 Figure 3 Embedded EraseTM Algorithm EMBEDDED ALGORITHMS * : The sequence is applied for · 16 mode. The addresses differ from · 8 mode. Start 555H/AAH 2AAH/55H 555H/AAH 555H/80H 555H/10H 2AAH/55H 555H/AAH 2AAH/55H 555H/AAH 555H/80H 2AAH/55H Additional sector erase commands are optional. Write Erase Command Sequece (See Below) Data Polling or Toggle Bit Successfully Completed Erasure Completed Chip Erase Command Sequence* (Address/Command): Individual Sector/Multiple Sector* Erase Command Sequence (Address/Command): Sector Address/30H Sector Address/30H Sector Address/30H

MBM29F800TA -55/-70/-90/MBM29F800BA -55/-70/-90 Figure 4 Data Polling Algorithm Note: DQ 7 is rechecked even if DQ5 = “1” because DQ7 may change simultaneously with DQ5. VA = Address for programming = Any of the sector addresses within the sector being erased during sector erase operation = Any of the sector addresses within the sector not being protected during chip erase operation Fail DQ 7 = Data? No No DQ 7 = Data? DQ 5 = 1? Pass Yes Yes No Start Read Byte (DQ 0 to DQ7) Addr. = VA Read Byte (DQ 0 to DQ7) Addr. = VA Yes

MBM29F800TA -55/-70/-90/MBM29F800BA -55/-70/-90 Figure 5 Toggle Bit Algorithm Note: DQ 6 is rechecked even if DQ5 = “1” because DQ6 may stop toggling at the same time as DQ 5 changing to “1”. Fail DQ 6 = Toggle Yes No DQ 6 = Toggle DQ 5 = 1? Pass Yes No Yes Start Read Byte (DQ 0 to DQ7) Addr. = “H” or “L” No Read Byte (DQ 0 to DQ7) Addr. = “H” or “L”

MBM29F800TA -55/-70/-90/MBM29F800BA -55/-70/-90 Figure 6 Sector Protection Algorithm * : A-1 is VIL on byte mode. Setup Sector Addr. Activate WE Pulse WE = VIH, CE = OE = VIL (A9 should remain VID) Yes Yes No No PLSCNT = 1 Time out 100 ms Read from Sector Increment PLSCNT No Yes Protect Another Sector? Start Sector Protection Data = 01H?PLSCNT = 25? Device Failed Remove V ID from A9 Completed Remove VID from A9 Write Reset Command (Addr. = SA, A1 = 1, A0 = V6 = 0)* OE = VID, A9 = VID, A6 = CE = VIL, RESET = VIH (A18, A17, A16, A15, A14, A13, A12) Write Reset Command

MBM29F800TA -55/-70/-90/MBM29F800BA -55/-70/-90 Figure 7 Temporary Sector Unprotection Algorithm Notes:1. All protected sectors unprotected. 2. All previously protected sectors are protected once again. RESET = VID (Note 1) Perform Erase or Program Operations RESET = VIH Start Temporary Sector Unprotection Completed (Note 2)

MBM29F800TA -55/-70/-90/MBM29F800BA -55/-70/-90 n ERASE AND PROGRAMMING PERFORMANCE n TSOP PIN CAPACITANCE Note: T est conditions TA = 25°C, f = 1.0 MHz n SOP PIN CAPACITANCE Note: T est conditions TA = 25°C, f = 1.0 MHz Parameter Limits Unit Comments Min. Typ. Max. Sector Erase Time — 1 8 sec Excludes 00H programming prior to erasure Word Programming Time — 16 200 µs Excludes system-level overheadByte Programming Time — 8 150 µs Chip Programming Time — 8.4 20 sec Excludes system-level overhead Erase/Program Cycle 100,000 — — cycles Parameter Symbol Parameter Description Test Setup Typ. Max. Unit C IN Input Capacitance V IN = 0 8 10 pF C OUT Output Capacitance V OUT = 0 8 10 pF C IN2 Control Pin Capacitance V IN = 0 8.5 12.5 pF Parameter Symbol Parameter Description Test Setup Typ. Max. Unit C IN Input Capacitance V IN = 0 8 10.5 pF C OUT Output Capacitance V OUT = 0 8 10 pF C IN2 Control Pin Capacitance V IN = 0 8.5 12.5 pF

MBM29F800TA -55/-70/-90/MBM29F800BA -55/-70/-90 n PACKAGE DIMENSIONS (Continued) 48-pin plastic TSOP(I) (FPT -48P-M19) *: Resin protrusion. (Each side: 0.15(.006) Max) C 1996 FUJITSU LIMITED F48029S-2C-2 Details of "A" part 0.15(.006) MAX 0.35(.014) MAX INDEX "A" 18.40±0.20 (.724±.008) 20.00±0.20 (.787±.008) 19.00±0.20 (.748±.008) 0.10(.004) 0.50±0.10 (.020±.004) 0.15±0.05 (.006±.002) 11.50REF (.460) 0.50(.0197) TYP 0.20±0.10 (.008±.004) 0.05(0.02)MIN .043–.002 +.004 –0.05 +0.10 1.10 M0.10(.004) (STAND OFF) 24 25 LEAD No. * 12.00±0.20 (.472±.008) (Mounting height) Dimensions in mm (inches)

MBM29F800TA -55/-70/-90/MBM29F800BA -55/-70/-90 (Continued)) 48-pin plastic TSOP(I) (FPT -48P-M20) *: Resin protrusion. (Each side: 0.15(.006) Max) C 1996 FUJITSU LIMITED F48030S-2C-2 Details of "A" part 0.15(.006) MAX 0.35(.014) MAX INDEX "A" 18.40±0.20 (.724±.008) 20.00±0.20 (.787±.008) 19.00±0.20 (.748±.008) 0.10(.004) 0.50±0.10 (.020±.004) 0.15±0.10 (.006±.002) 11.50(.460)REF 0.50(.0197) TYP 0.20±0.10 (.008±.004) 0.05(0.02)MIN .043−.002 +.004 −0.05 +0.10 1.10 M0.10(.004) STAND OFF 24 25 LEAD No. Dimensions in mm (inches) (Mounting height)

MBM29F800TA -55/-70/-90/MBM29F800BA -55/-70/-90 (Continued) 44-pin plastic SOP (FPT -44P-M16) C 1998 FUJITSU LIMITED F44023S-4C-4 INDEX 0.40 +0.10 –0.05 +.004 –.002 .016 MØ0.13(.005) 1.27(.050)TYP (.006±.002) 0.80±0.20 (.031±.008) 1 22 2344 LEAD No. (Stand off) 1.120–.008 +.010 –0.20 +0.25 28.45 14.40±0.20 (.567±.008) 0.15±0.05 0.10(.004) 26.67(1.050)REF (Mounting height) .008–.006 +.004 –0.15 +0.10 0.20

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