2907

PN2907A_V02 ONSEMI | Alldatasheet

Document overview

• Manufacturer or author: Provided By alldatasheet.com(free datasheet download site)
• PDF pages: 11

Technical content

Features

• High DC Current Gain (h FE) Range: 100 ~ 300
• High-Current Gain Bandwidth Product (f T):

200 MHz (Minimum)

• Maximum Turn-On Time (ton): 45 ns
• Maximum Turn-Off Time (toff): 100 ns
• Ultra-Small Surface-Mount Package: SOT-223 (PZT2907A)

Applications

• General-Purpose Amplifier
• Switch

Ordering Information

Part Number Top Mark Package Packing Method PN2907ABU 2907A TO-92 3L Bulk PN2907ATF 2907A TO-92 3L Tape and Reel PN2907ATFR 2907A TO-92 3L Tape and Reel PN2907ATA 2907A TO-92 3L Ammo PN2907ATAR 2907A TO-92 3L Ammo MMBT2907A 2F SOT-23 3L Tape and Reel MMBT2907A-D87Z 2F SOT-23 3L Tape and Reel PZT2907A 2907A SOT-223 4L Tape and Reel PN2907A MMBT2907A PZT2907A EBC TO-92 SOT-23 SOT-223 Mark:2F C B E E B C C

Description

The PN2907A, MMBT2907A, and PZT2907A are 60 V PNP bipolar transistors designed for use as a general- purpose amplifier or switch in applications that require up to 500 mA. Offered in an ultra-small surface-mount package (SOT-223), the PZT2907A is ideal for space- constrained systems. The NPN complementary types are the PN2222A, MMBT2222A, and PZT2222A; respectively.

PN2907A / MMBT2907A / PZT2907A — 60 V PNP General-Purpose Transistor Absolute Maximum Ratings(1),(2) Stresses exceeding the absolute maximum ratings may damage the device. The device may not function or be opera- ble above the recommended operating conditions and stressing the parts to these levels is not recommended. In addi- tion, extended exposure to stresses above the recommended operating conditions may affect device reliability. The absolute maximum ratings are stress ratings only. Values are at TA = 25°C unless otherwise noted. Notes: 1. These ratings are based on a maximum junction temperature of 150°C. 2. These are steady-state limits. ON Semiconductor should be consulted on applications involving pulsed or low- duty cycle operations. Thermal Characteristics Values are at TA = 25°C unless otherwise noted. Notes: Symbol Parameter Value Unit VCEO Collector-Emitter Voltage -60 V VCBO Collector-Base Voltage -60 V VEBO Emitter-Base Voltage -5.0 V IC Collector Current - Continuous -800 mA TJ, TSTG Operating and Storage Junction Temperature Range -55 to +150 °C Symbol Parameter Max. Unit PN2907A(4) MMBT2907A(3) PZT2907A(4) PD Total Device Dissipation 625 350 1000 mW Derate Above 25°C5 .0 2.8 8.0 mW/°C RθJC Thermal Resistance, Junction to Case 83.3 °C/W RθJA Thermal Resistance, Junction to Ambient 200 357 125 °C/W www.onsemi.com

PN2907A / MMBT2907A / PZT2907A — 60 V PNP General-Purpose Transistor

Electrical Characteristics

Values are at TA = 25°C unless otherwise noted. Notes: 5. Pulse test: pulse width ≤ 300 μs, duty cycle ≤ 2.0%. Symbol Parameter Conditions Min. Max. Unit Off Characteristics V(BR)CEO Collector-Emitter Breakdown Voltage(5) IC = -10 mA, IB = 0 -60 V V(BR)CBO Collector-Base Breakdown Voltage I C = -10 μA, IE = 0 -60 V V(BR)EBO Emitter-Base Breakdown Voltage I E = -10 μA, IC = 0 -5.0 V IBL Base Cut-Off Current VCE = -30 V, VEB = -0.5 V -50 nA ICEX Collector Cut-Off Current VCE = -30 V, VEB = -0.5 V -50 nA ICBO Collector Cut-Off Current VCB = -50 V, IE = 0 -0.02 μA VCB = -50 V, IE = 0, TA = 150°C -20 On Characteristics hFE DC Current Gain IC = -0.1 mA, VCE = -10 V 75 IC = -1.0 mA, VCE = -10 V 100 IC = -10 mA, VCE = -10 V 100 IC = -150 mA, VCE = -10 V(5) 100 300 IC = -500 mA, VCE = -10 V(5) 50 VCE(sat) Collector-Emitter Saturation Voltage (5) IC = -150 mA, IB = -15 mA -0.4 V IC = -500 mA, IB = -50 mA -1.6 VBE(sat) Base-Emitter Saturation Voltage V IC = -500 mA, IB = -50 mA -2.6 Small Signal Characteristics fT Current Gain - Bandwidth Product IC = -50 mA, VCE = -20 V, f = 100 MHz 200 MHz Cob Output Capacitance VCB = -10 V, IE = 0, f = 100 kHz 8.0 pF Cib Input Capacitance VEB = -2.0 V, IC = 0, f = 100 kHz 30 pF Switching Characteristics ton Turn-On Time VCC = -30 V, IC = -150 mA, IB1 = -15 mA 45 ns td Delay Time 10 ns tr Rise Time 40 ns toff Turn-Off Time VCC = -6.0 V, IC = -150 mA, IB1 = IB2 = -15mA 100 ns ts Storage Time 80 ns tf Fall Time 30 ns www.onsemi.com

Figure 14. 3-LEAD, TO92, JEDEC TO-92 COMPLIANT STRAIGHT LEAD CONFIGURATION (OLD TO92AM3) specifically the warranty therein, which covers ON Semiconductor products.

Figure 15. 3-LEAD, TO92, MOLDED 0.200 IN LINE SPACING LEAD FORM (J61Z OPTION) (ACTIVE) conditions, specifically the warranty therein, which covers ON Semiconductor products.

Figure 16. 3-LEAD, SOT23, JEDEC TO-236, LOW PROFILE (ACTIVE) itions, specifically the warranty therein, which covers ON Semiconductor products. TO-236, VARIATION AB, ISSUE H. B) ALL DIME NSIONS ARE IN MILLIMETERS. MOLD FLASH AND TIE BAR EXTRUSIONS.

1.20 MAX

0.20 A B

0.20 MIN

Figure 17. MOLDED PACKAGING, SOT-223, 4-LEAD (ACTIVE) itions, specifically the warranty therein, which covers ON Semiconductor products.

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