28S

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Dated : 23/02/2016 CL R ev:01 ® SEMTECH ELECTRONICS LTD. 28S NPN Silicon Epitaxial Planar Transistor for switching and amplifier applications. Especially suitable for AF-driver stages and low power output stages. The transistor is subdivided into one group, according to its DC current gain. Absolute Maximum Ratings (Ta = 25 OC) Parameter Symbol Value Unit Collector Base Voltage V CBO 40 V Collector Emitter Voltage V CEO 20 V Emitter Base Voltage V EBO 6 V Collector Current I C 1 A Peak Collector Current I CM 1.25 A Base Current I B 100 mA Power Dissipation P tot 850 mW Junction Temperature T j 150 OC Storage Temperature Range T stg - 55 to + 150 OC Characteristics at Ta = 25 OC Parameter Symbol Min. Typ. Max. Unit DC Current Gain a t VCE = 1 V, IC = 5 m A a t VCE = 1 V, IC = 100 mA a t VCE = 1 V, IC = 800 mA hFE hFE hFE 200 170 1000 Collector Base Cutoff Current a t V CB = 35 V ICBO - - 100 nA Emitter Base Cutoff Current a t VBE = 6 V IEBO - - 100 nA Collector Base Breakdown Voltage a t IC = 100 µA V(BR)CBO 40 - - V Collector Emitter Breakdown Voltage a t IC = 2 mA V(BR)CEO 20 - - V Emitter Base Breakdown Voltage a t IE = 100 µA V(BR)EBO 6 - - V Collector Emitter Saturation Voltage a t IC = 600 mA, IB = 20 mA VCE(sat) - - 0.55 V Base Emitter Saturation Voltage a t IC= 600 mA, IB = 20 mA VBE(sat) - 0.98 1.2 V Base Emitter Voltage a t IC = 10 mA, VCE = 1 V VBE - 0.66 1.0 V Gain Bandwidth Product a t VCE = 10 V, IC = 50 mA fT 100 - - MHz Collector Base Capacitance a t VCB = 10 V, f = 1 MHz Cob - - 9 pF 1. Emitter 2. Collector 3. Base TO-92 Plastic Package