28M0 MICROSEMI | Alldatasheet
Document overview
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Technical content
580 Pleasant St. Phone: 617-924-9280 Watertown, MA 02472 Fax : 617-924-1235 DIE SPECIFICATION 60V 300mA MONOLITHIC DIODE ARRAY FEATURES:
- TWO EIGHT DIODE CORE DRIVER
- trr < 20 ns
- RUGGED AIR-ISOLATED CONSTRUCTION
- LOW REVERSE LEAKAGE CURRENT Symbol Parameter Limit Unit VBR(R) *1 *2 Reverse Breakdown Voltage 60 Vdc IO *1 Continuous Forward Current 300 mAdc IFSM *1 Peak Surge Current (tp= 1/120 s) 500 mAdc Top Operating Junction Temperature Range -65 to +150 °C Tstg Storage Temperature Range -65 to +200 °C NOTE 1: Each Diode NOTE 2: Pulsed: PW = 100ms max.; duty cycle < 20% Symbol Parameter Conditions Min Max Unit BV1 Breakdown Voltage IR = 10uAdc 60 Vf1 Forward Voltage IF = 100mAdc *1 1 Vdc Vf2 Forward Voltage IF = 500mAdc *1 1.5 Vdc IR1 Reverse Current VR = 40 Vdc 0.1 uAdc Ct Capacitance (pin to pin) VR = 0 Vdc ; f = 1 MHz 8.0 pF tfr Forward Recovery Time IF = 500mAdc 40 ns trr Reverse Recovery Time IF = IR = 200mAdc, irr = 20 mAdc, RL = 100 ohms 20 ns NOTE 1: Pulsed: PW = 300us +/- 50us, duty cycle < 2%, 90us after leading edge Sertech reserves the right to make changes to any product design, specification or other information at any time without prior notice. MSC1025.PDF Rev - 12/3/98 Packaging Options: W: Wafer (100% probed ) U: Wafer (sample probed) D: Chip (Waffle Pack ) B: Chip (Vial) V: Chip (Waffle Pack, 100% visually inspected ) X: Other Metallization Options: Standard: Al Top / Au Backside (No Dash #) Processing Options: Standard: Capable of JANTXV application (No Suffix) Suffix C : Commercial Suffix S : Capable of S-Level equivalent applications
ORDERING INFORMATION
PART #: 28M0_ _- _ First Suffix Letter: Packaging Option Second Suffix Letter: Processing Option Dash #: Metallization Option Electrical Characteristics (Per Diode) @ 25°C unless otherwise specified 28M0 J A C C A J J J J JJJ .061" .054" Absolute Maximum Ratings: