M27C800 STMICROELECTRONICS | Alldatasheet
Document overview
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Technical content
8 Mbit (1Mb x8 or 512Kb x16) UV EPROM and OTP EPROM
■ 5V ± 10% SUPPLY VOLTAGE in READ OPERATION ■ ACCESS TIME: 50ns ■ BYTE-WIDE or WORD-WIDE CONFIGURABLE ■ 8 Mbit MASK ROM REPLACEMENT ■ LOW POWER CONSUMPTION – Active Current 70mA at 8MHz – Stand-by Current 50µA ■ PROGRAMMING VOLTAGE: 12.5V ± 0.25V ■ PROGRAMMING TIME: 50µs/word ■ ELECTRONIC SIGNATURE – Manufacturer Code: 20h – Device Code: B2h
DESCRIPTION
The M27C800 is an 8 Mbit EPROM offered in the two ranges UV (ultra violet erase) and OTP (one time programmable). It is ideally suited for micro- processor systems requiring large data or program storage. It is organised as either 1 Mwords of 8 bit or 512 Kwords of 16 bit. The pin-out is compatible with the most common 8 Mbit Mask ROM. The FDIP42W (window ceramic frit-seal package) has a transparent lid which allows the user to ex- pose the chip to ultraviolet light to erase the bit pat- tern. A new pattern can then be written rapidly to the de- vice by following the programming procedure. For applications where the content is programmed only one time and erasure is not required, the M27C800 is offered in PDIP42, PLCC44 and SO44 packages. FDIP42W (F) PDIP42 (B) SO44 (M)PLCC44 (K) Figure 1. Logic Diagram
44 VSS
Table 1. Signal Names
Table 2. Absolute Maximum Ratings(1)
- Minimum DC voltage on Input or Output is –0.5V with possible undershoot to –2.0V for a period less than 20ns. Maximum DC
voltage on Output is VCC + 0 . 5 Vw i t hp o s s i b l eo v e r s h o o tt oVCC +2V for a period less than 20ns. Table 3. Operating Modes Note: X = VIH or VIL,VID = 12V ± 0.5V. Table 4. Electronic Signature
Table 7. Read Mode DC Characteristics(1) Note: 1. VCC must be applied simultaneously with or before VPP and removed simultaneously or after VPP .
- Maximum DC voltage on Output is VCC +0 . 5 V .
Table 6. Capacitance(1)(TA =2 5° C ,f=1M H z ) Note: 1. Sampled only, not 100% tested.
Table 8A. Read Mode AC Characteristics(1) (TA =0t o7 0° Co r– 4 0t o8 5° C ;VCC = 5V ± 5% or 5V ± 10%; VPP =V CC ) Note: 1. VCC must be applied simultaneously with or before VPP and removed simultaneously or after VPP. 2. Sampled only, not 100% tested. 3. Speed obtained with High Speed AC measurement conditions. Table 8B. Read Mode AC Characteristics(1) (TA =0t o7 0° Co r– 4 0t o8 5° C ;VCC = 5V ± 5% or 5V ± 10%; VPP =V CC ) Note: 1. VCC must be applied simultaneously with or before VPP and removed simultaneously or after VPP. 2. Sampled only, not 100% tested. Symbol Alt Parameter Test Condition M27C800 Unit-50(3) -70 -90 Min Max Min Max Min Max tAVQV tACC Address Valid to Output Valid E =V IL,G =V IL 50 70 90 ns tBHQV tST BYTE High to Output Valid E =V IL,G =V IL 50 70 90 ns tELQV tCE Chip Enable Low to Output Valid G =V IL 50 70 90 ns tGLQV tOE Output Enable Low to Output Valid E =V IL 30 35 45 ns tBLQZ (2) tSTD BYTE Low to Output Hi-ZE =V IL,G =V IL 30 30 30 ns tEHQZ (2) tDF Chip Enable High to Output Hi-Z G =V IL 03 003 003 0 n s tGHQZ (2) tDF Output Enable High to Output Hi-Z E =V IL 03 003 003 0 n s tAXQX tOH Address Transition to Output Transition E =V IL,G =V IL 555 n s tBLQX tOH BYTE Low to Output Transition E =V IL,G =V IL 555 n s Symbol Alt Parameter Test Condition M27C800 Unit-100 -120/150 Min Max Min Max tAVQV tACC Address Valid to Output Valid E =V IL,G =V IL 100 120 ns tBHQV tST BYTE High to Output Valid E =V IL,G =V IL 100 120 ns tELQV tCE Chip Enable Low to Output Valid G =V IL 100 120 ns tGLQV tOE Output Enable Low to Output Valid E =V IL 50 60 ns tBLQZ (2) tSTD BYTE Low to Output Hi-Z E =V IL,G =V IL 40 50 ns tEHQZ (2) tDF Chip Enable High to Output Hi-Z G =V IL 04 005 0n s tGHQZ (2) tDF Output Enable High to Output Hi-Z E =V IL 04 005 0n s tAXQX tOH Address Transition to Output TransitionE =V IL,G =V IL 55n s tBLQX tOH BYTE Low to Output Transition E =V IL,G =V IL 55n s
Figure 5. Word-Wide Read Mode AC Waveforms
Table 9. Programming Mode DC Characteristics(1) Note: 1. VCC must be applied simultaneously with or before VPP and removed simultaneously or after VPP . Table 10. Programming Mode AC Characteristics(1) Note: 1. VCC must be applied simultaneously with or before VPP and removed simultaneously or after VPP .
- Sampled only, not 100% tested.
The Electronic Signature (ES) mode allows the reading out of a binary code from an EPROM that will identify its manufacturer and type. This mode is intended for use by programming equipment to automatically match the device to be programmed with its corresponding programming algorithm. The ES mode is functional in the 25°C ± 5°C am- bient temperature range that is required when pro- gramming the M27C800. To activate the ES mode, the programming equipment must force 11.5V to 12.5V on address line A9 of the M27C800, with V PP =V CC = 5V. Two identifier bytes may then be sequenced from the device out- puts by toggling address line A0 from VILto VIH.A l l other address lines must be held at VIL during Electronic Signature mode. Byte 0 (A0 = VIL) represents the manufacturer code and byte 1 (A0 = VIH) the device identifier code. For the STMicroelectronics M27C800, these two identifier bytes are given in Table 4 and can be read-out on outputs Q7 to Q0. ERASURE OPERATION (applies to UV EPROM) The erasure characteristics of the M27C800 is such that erasure begins when the cells are ex- posed to light with wavelengths shorter than ap- proximately 4000 Å. It should be noted that sunlight and some type of fluorescent lamps have wavelengths in the 3000-4000 Å range. Research shows that constant exposure to room level fluo- rescent lighting could erase a typical M27C800 in about 3 years, while it would take approximately 1 week to cause erasure when exposed to direct sunlight. If the M27C800 is to be exposed to these types of lighting conditions for extended periods of time, it is suggested that opaque labels be put over the M27C800 window to prevent unintentional era- sure. The recommended erasure procedure for M27C800 is exposure to short wave ultraviolet light which has a wavelength of 2537 Å. The inte- grated dose (i.e. UV intensity x exposure time) for erasure should be a minimum of 30 W-sec/cm The erasure time with this dosage is approximate- ly 30 to 40 minutes using an ultraviolet lamp with 12000 µW/cm 2 power rating. The M27C800 should be placed within 2.5cm (1 inch) of the lamp tubes during the erasure. Some lamps have a filter on their tubes which should be removed before erasure.
Table 11. Ordering Information Scheme Note: 1. High Speed, see AC Characteristics section for further information. vice, please contact the STMicroelectronics Sales Office nearest to you.
Table 1. Revision History
Table 12. FDIP42W - 42 pin Ceramic Frit-seal DIP, with window, Package Mechanical Data Figure 10. FDIP42W - 42 pin Ceramic Frit-seal DIP, with window, Package Outline
Table 13. PDIP42 - 42 pin Plastic DIP, 600 mils width, Package Mechanical Data Figure 11. PDIP42 - 42 pin Plastic DIP, 600 mils width, Package Outline
Table 14. PLCC44 - 44 lead Plastic Leaded Chip Carrier, Package Mechanical Data Figure 12. PLCC44 - 44 lead Plastic Leaded Chip Carrier, Package Outline
Figure 13. SO44 - 44 lead Plastic Small Outline, 525 mils body width, Package Outline Table 15. SO44 - 44 lead Plastic Small Outline, 525 mils body width, Package Mechanical Data
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