27C210 PHILIPS | Alldatasheet
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Philips Components-Signetics [Decument No.) 53-1380 27C210 fecune. [ores | 4 MEG CMOS EPROM (64K x 16) |Date of issue [November 12, 1990 sete [Poa Spat | Memory Products DESCRIPTION FEATURES PIN CONFIGURATIONS Philips Components-Signetice 27h Low power consumption FA & N Packages CMOS EPROM is a 1,048,576-bit 5! = 100A maximum CMOS stand 5 read only memory organized as 65,536 current *y ver Ly fel vee words of 16 bits each. It employs . boa pa) Pa advanced CMOS circuitry for systems ° High-performance speed ow GY pa) we requiring low power, high-performance — 120ns maximum access time ou [i] Bi} aw speeds, and immunity to noise. The © Noise immunity features ons [5] Ba) avs 27C210 has a non-multiplexed = £10% Voc tolerance on [5] Baa] ars addressing interface and is — Maximum latch-up immunity through on Ba) ar2 plug-compatible with the industry Epitaxial processing ow [7] B53) ant standard 27210. . A - ® Quick-pulse programming algorithm oo fF] 2] Av Quick-pulse programming is employed os [al oy bi] as on plastic devices which may speed UP Bin DESCRIPTION a) flow programming by as much as one we hundred times. In the absence of [_Ao-a1s_ | Address or [al Ba) as quick-pulse programming equipment, [00-015 | Ouputs os (3 pal 47 the intelligent programming algorithm = | OE | OutputEnable os [ 7 as may be utized. [ee ——T cheno] | wl an The 27C210 is offered in windowed [Pom | Program Enabio | ©» al a - Ceramic Dual In-Line, Plastic Dual oe [7] Baa) as In-Line and Plastic Leaded Chip Carrier. [GND | Ground —~*d or B3) a2 (PLCC) packages. This davies canbe [Vw [Progaming | | Bs Programmed wih standard EPROM a: a oh) Programmers. [ou | Don't Use APocksge | BLOCK DIAGRAM fo)__[+)__ fro} | DATA OUTPUTS. Cy pe) if 00-018 | id (OUTPUT ENABLE ci Pa | row PROGRAMMING LOGIC i) =) | bad CHP ENABLE Pin Function Pin Function Pin Function | Peeper rs | | rane | $2 ge ge i} 5 ow 2 OF os | ee ee XDECODE 8 on ZB oO BAZ eure BM 22 8 he 4 «O7 a 44 Vee | 18 «06 3 | Philips Components S PHILIPS
Philips Components-—Signetics Memory Products Product Specification
1 MEG CMOS EPROM (64K x 16) 270210
READ MODE data from the output pins. Data is availableat STANDBY MODE ‘The 27C210 has two control functions, both _—the outputs after a delay of to¢ from the ‘The 27C210 has a standby mode which of which must be logically active in order to falling edge of OE, assuming that CE has reduces the maximum Voc current to 100pA. obtain data at the outputs. Chip enable (CE) been low and addresses have been stable for —_{t is placed in the Standby mode when TE is is the power control and should be used for at least aoc - toe. in the High state. When in the Standby mode, device selection. Output Enable (OE) is the the outputs are in a high-impedance state, output control and should be used to gate independent of the OE input.
ORDERING INFORMATION
DESCRIPTION
[| COMMERCIAL INDUSTRIAL. - ‘i a ; 27C210-12 FA 40-Pin Ceramic Dual In-Line with quartz window 270210115 FA n Co 27C210-15 FA 600mil-wide o7C21020FA 276210120 FA : , i 276210-12N 40-Pin Plastic Dual In-Line 270210115 N n Pie 27C210-15N ir a ; 276210-12A 44-Pin Plastic Leaded Chip Carer 270210115 A 270210-15A ABSOLUTE MAXIMUM RATINGS! a Vehage inputs and outputs [_oswes | v_| Voltage on AS? (during intaligent identifier interrogation) | o6weiso [ov | Vetage on Vp? (tring programming) [__2sweuo | v_| NOTES: 1. Stresses above those listed under “Absolute Maximum Ratings" may cause permanent damage to the device. This is a stress rating only and functional operation of the device at these or any other conditions above those indicaled in the operational sections of this specification is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. 2. All voltages are with respect to network ground. DEVICE OPERATION OPERATING TEMPERATURE RANGE [wove [te [or [raw [vt Tourrurs] [PARAMETER [_—_‘RATING(*O) [va | COMMERCIAL | Oupurpisabie | ve [vn [Vn | Voc [Hz _| a fomperahre range: Tan INDUSTRIAL [standby vin | TT voc [Hz | 4010 +85 NOTES: 1. All voltages are with respect to network ground. 2. Vpp may be one diode voltage drop below Voc, and can be connected directly to Voc. 3. Xcan be Vii or Vi. November 12, 1990 2
Philips Componente—Signetics Memory Products Product Specification
1 MEG CMOS EPROM (64K x 16) 27C210
DC ELECTRICAL CHARACTERISTICS Over operating temperature range, +4.5V < Voc < +5.5V SYMBOL TEST CONDITIONS [urs | Min” [tyes] wax | [um | Leakagetigh YT V=58V=Voo TT oor To Tv | [ue [teakagetow eww oor to CS Tho | teskage ——SSC~*diC Es VV = SSV Ven 00 | [00 | w_| [os | Shortcreuin® TT Vor=ov 00 ma jen [ooo | eeearaaas [T= [= | cranngcnosiont | wpacicewisvorom | | | | me | a ce [ 'secMos [Standby (CMOSinputsy® TEV PTT 00 Tv [Me [tower eevee Tos TT os Tv [vu | tow(cmosy TT ee=Vec | oe oe [| righ) rea Veo 20 veces v [vw | Hin cmosy ree Voe id M20 | —*d Meee |v _| [ ver [Rea peratingy Loo-07 | TT Veo fv [Vou [tow ttm os [vow [igh teeta as [ex [stents vesovrevaw TTF Lcour [oupus Vw = OV, Vour = OV ee ee : NOTES: | 2. All voltages are with respect to network ground. \\ 3. Typical limits are at Vog = 5V, Tart = 25°C. 1 4. TTL inputs: Spec Vu, Vu levels. | CMOS inputs: GND 40.2V to Voc #0.2V. 5. TE is Voc 40.2V. All other inputs can have any value within spec. 6. Maximum active power usage is the sum of Ipp + loc and is measured at a frequency of 8.3MHz. 7. Test one output at a time, duration should not exceed 1 second, 8. Vpp may be one diode voltage drop below Voc, and can be connected directly to Voc. i 9. Guaranteed by design, not 100% tested. i November 12, 1990 3
Philips Components-Signetics Memory Products Product Specification AC ELECTRICAL CHARACTERISTICS ‘Over operating temperature range, +4.5V < Voc < +5.5V, PR, = 6602, C, = 100pF 270210-15 270210-20 [win [wax [win] wax [win wax] [co [Out Takes TT veo TT 50 TT 20 Tone ce | ume Pe eo go 200 Ts [oe [Out ee Pe PP | [oe mete Te mT TT oT | Lou ___[Ouputhois [Ades teorde [oo | fo | | o | | | NOTES: 2. Guaranteed by design, not 100% tested. 3. OE may be delayed up to tc - tor after the falling edge of CE without impact on tor. AC VOLTAGE WAVEFORMS sees ww ‘ADDRESSES anoress eee vw va Ld sees Ve va ca eee Ve OE ‘oF ton i oes vu i ourpuT: as VAUD OUTPUT Lad | sone ve AC TESTING LOAD CIRCUIT i i DEVICE i UNDER © OUT Test i | November 12, 1990 4
Philips Components-Signetics Memory Products Product Specification li a cl ie le a PROGRAMMING INFORMATION ERASURE CHARACTERISTICS ‘The identifier information for Signetics 276210 Complete programming system specifications The erasure characteristics of the 276210 is as follows: for both the intelligent programming method are such that erasure begins to occur upon When AO = Vi_ and for the quick-pulse programming method exposure to light with wavelengths shorter data is “Manufacturer” FF 15 HE9 are available upon request from Signetics. than approximately 4000 Angstroms (A). It When AO = Vai a should be noted that sunlight and certain data is “Product” FF 17; Signetics encourages the purchase of types of fluorescent lamps have wavelengths . ; ven programming equipment from a manufacturer in the 3000 - 4000 A Data that Programming reliability is also ensured as the who has a full line of programming products oS a ta Too level mows t_ incremental program margin of each byte is 10 offer. Signetics also encourages the lighting could erase the pica 27C210in continually monitored to determine when it manufacturers of 276210 programming ig! canuiohy deve NPihie twould take Nas been successtuly programmed. The equipment to submit their equipment for aaeronimatehy one weok to cause ‘would programming algorithm utilizes two different verification of electrical parameters and won exposed to drect sunight Ifthe pulse types: initial and overprogram. The programming procedures. Information on 276210 is to be e: to these types of duration of the initial PGM pulse(s) is ims, manufacturer offing equipment certfied by fing . aposed Hone which is then followed by a longer Signetics is available upon request from too conditions k extoncod Doriods Ot overprogram pulse of 3Xms. X is an iteration ‘Signetics Memory Marketing. + OPAC kd be placed counter and is equal to the number of the the window to prevent unintentional erasure. 721418 pulses applied to a particular The recommended erasure procedure for location before a correct verify occurs. Up to PROGRAMMING THE 27C210 the 27C210 is exposure to shortwave ultra- 25 1ms pulses per byte are provided for Caution: Exceeding 14.0V on Vpp pin may violet light which has a wavelength of 2537 before the overprogram pulse is applied (refer permanently damage the 27C210. pnosome (A). The imograted dose eu tb the following pages for algorithm x for erasure . Italy, all bits of the 270210 arein the "1" aon S¥PpearE Mo) ir erasure snow specicatons) state. Data is introduced by selectively time with this dosage is approximately 15 to programming ‘Os orca be 20 minutes using an ultraviolet lamp with a CMOS NOISE - Although ¢ 12,000uWiem? power rating. The 276210 TICS Programmed, both *1"s and °0"s can be should be placed within one inch of the lamp ¢ ies RA oval ERIS 9 techniques ha Prosont inthe data wor tubes during erasure. The maximum enabled Signaics w buld GMOS wit ‘The data to bo programmed is applied 16 bits integrated dose a 270210 can be exposed'0 features that add to system reliability. Those in parallel to the data output pins. The levels without damage is 7258Wsec/em? (1 week @ include input/output protection to latch-up for required for the address and data inputs are 12000 Wren). Exposure of these CMOS stresses up to 100mA on Address and Data standard TTL logic levels. EPROM to high intensity UV light for longer ing that range from -1V to (Voc + 1V). In periods may cause permanent damage. addition, the Vpp (Programming) pin is designed to resist latch-up to the 14V QUICK-PULSE PROGRAMMING maximum device limit. ALGORITHM INTELLIGENT PROGRAMMING Signetics plastic EPROMs can be ALGORITHM programmed using the quick-pulse The 27C210 intelligent programming SIGNETICS DISCOURAGES THE Programming algorithm to substantially algerthma rapidly program CMOS EPROMs CONSTRUCTION AND USE OF : reduce the throughput time in the production _using an efficient and reliable method Pe ” PROGRAMMI | environment. This algorithm typically allows _articularly suited to the production trate PR ING : plastic devices to be programmed in under programming environment. Actual : . twelve seconds, a significant improvement programming times may vary due to \\n order to consistently achieve excellent over previous algorithms. Actual differences in programming equipment. programming vokds, porioxkc calbraton ot arming octiperentting ore PROM The intollignt identifier also provides the Consul the equpment ‘manufacturer for the Programming equipmen . reading out of a binary code from an EPROM — recommended calibration interval. Signetics The quick-pulse programming algorithm uses that will identify its manufacturer and type. warranty for programmability extends only to initial pulses of 100us followed by a byte This is intonded for use by programming product that has been programmed on verification to determine when the address ‘equipment for the purpose of automatically certified equipment that has been serviced to byte has been successfully programmed. Up‘ maiching the device to be programmed with —_the manufacturers recommendation. to 25 100ps pulses per byte are provided its corresponding programming algorithm. before a failure is recognized (refer to the This mode is functional in the 25° + 5°C following pages for algorithm specifications). ambient temperature range that is required i when programming the 27C210. To activate this mode, the programming equipment must force 11.5V to 12.5V on address AQ of the 270210. Two bytes may then be read from the device outputs by toggling address line AD from Vi, to Vig. The TE, OE and all other address lines must be at Vy during interrogation. November 12, 1990 5
Philips Components-Signetics Memory Products Product Specification INTELLIGENT PROGRAMMING ALGORITHM DC PROGRAMMING CHARACTERISTICS Tam = 25°C +5°C, Voc = 6.0V 40.25V, Vpp = 12.5V 40.5V pest or oer ed | [win wax] [4 | tnputcurrent(altinguts)TV=Vaorvn || OTA [| ve___[ inputiowlevel(atinputsy | ot Tw [Vn inputhighiovor es [Voc | ouput vege auingveriy | tmr=atma | | ous v | | Von __| Outputhigh votage during verity [tema Ts TTC [ce | Vocsuppycurent —[n-t5=oma | || SmA_Y Lore | Ver supply curont program) [E=Me TC] SCS AC PROGRAMMING CHARACTERISTICS SYMBOL PARAMETER TEST CONDITIONS [| suns | win” | tye [max | [us [Adress somptme TC | CTT [tos [OEscupime OO C—<C—i ae CdCl [os | Datasmptime Cd TCs [ms Addiresshoidime CC TCU a TO [ tore? | CEhightwoutputtoatdolay TT Tt |e‘ [ws | Vepsoupime CC™~—C—s Sk CC C' a a OT [ccs | CEsompime OT CC™C~C~iS Cid [ew | CEinial program puisowiah [Newt «| 0s | 10 | 105 | ms | [tow | CE overprogram pulsewidth [Nowe | eas | | (7075 | me | Loc [Datavaidtomoe CC CCC tC ' AC CONDITIONS OF TEST ' Input Pulse LeVEIS 2... cece ee eee eee eeee eee eeeeeetntneeeteteteetteesierrerrserereierreseereeee sy O:65V to 2.4V NOTES: 1. Initial program pulse width tolerance is ims +5%. 2. The length of the overprogram pulse may vary from 2.85msec to 78,75msec as a function of iteration counter value X. 3. The parameter is only sampled and is not 100% tested. Output Float is defined as the point whare data is no longer driven — see timing 4. During programming, a 0. yf capacitor is required from Vpp to GND node, to suppress voltage transients that can damage the device. November 12, 1990 6
Philips Components—Signetics Memory Products Product Specification
1 MEG CMOS EPROM (64K x 16) 276210
INTELLIGENT PROGRAMMING ALGORITHM WAVEFORMS PROGRAM. PROGRAM READ VERIFY va ‘= SS a ee Yu re |_| - wi | tov Voc vw te we “—~ [fT UT MH “ . ‘we tow: 0 va co 3 i Mw November 12, 1990 7
INTELLIGENT PROGRAMMING ALGORITHM FLOWCHART rD Cae) ; = S> <SL= ‘WORD > < - Yes aes) DAT PASS November 12, 1990 8
Philips Components—Signetics Memory Products Product Specification QUICK PULSE PROGRAMMING ALGORITHM DC PROGRAMMING CHARACTERISTICS peer] ere ere ee | ee | Ju [ teputcurrent(aitinputs) [Ve Vuorve TT tT [Vu [ tmputtow ever atinputsy CT tT tw [Vin | tmputhighiever Cte ss | Vo. | Outputlow votage during verily [tu =2tmA | S| Ss [Vou | Outputhigh vohage during very [skou=25mA_ | S| CTC | toce | Vecsupplycurent 0 5=oma TTT | tere | Ver supply current program) | E-MaT | OTA AC PROGRAMMING CHARACTERISTICS pert ee meee eee] | [ win [typ [wax | [us| Addrosssotupime TC |S sd [oes | OEsoupime EC ~ [os | atasompime Cd [wi | Addrosshoigtme TC TC [tu | Dataholdime OT C™~“—~éisTS CG CTC | torr? | OE hightooutputfoatdeay || CT Ts [wes [| Versouptme | C“‘aR 2«*|SS OT Ts [wos [Vooseupime TC OTC | ew | TEinitel program pulsewidh | Nowt | 085 | 0.100 | 0.105 | ms | [ toew | TE overprogram pulse wih | Nowe | es || 788 | ome [we [Detavaidtomoe OT C“‘CSCCWNSCO#*dSCONC‘édC(S COWS Ts AC CONDITIONS OF TEST NOTES: 1. Initial program pulse width tolerance is ims +5%. 2. The length of the overprogram pulse may vary from 2.85msec to 78.75msec as a function of iteration counter value X. 3. Fhe parameter is only sampled and is not 100% tested. Output Float is defined as the pont where data is no longer driven — sae timing ram. 4 Durng programming, 0. pf capacitors required from Vp to GND node, to suppress voltage transionts that can damage the device. November 12, 1990 9
Philips Components-Signetics Memory Products Product Specification QUICK PULSE PROGRAMMING ALGORITHM WAVEFORMS PROGRAM. PROGRAM, READ VERIFY iL wu ‘we ro | a om Yu \\__] ra Voc vu ce ve ie WH “ . ‘ww ow OES « MH November 12, 1990 10
Philips Components—Signetics Memory Products Product Specification QUICK PULSE PROGRAMMING ALGORITHM FLOWCHART Vpp = 12.75 Coxe) (CC wereenrx Ss : (ONE WORD ‘WORD ORIGINAL DATA, ‘PASS November 12, 1990 W
Philips Components—Signetics Memory Products Product Specification
1 MEG CMOS EPROM (64K x 16) 27€210
40-PIN (600 mils wide) CERAMIC DUAL IN-LINE WITH WINDOW (F) PACKAGE. [ [ + SOERSTERS Re Shown PARENTHESIS ARLAAAAALAAARAR AAA SAL 2 DIMENSION AND TOLERANCING PER ANSI Y14.5M-1902 «ee eee mreangs aan i SPH RSE) «se pues ensue ne ee » saummen saneom nogasone perry alae ry «Sere con cement cu ery i Wii t To L 4geigigy argeger /] MaRgheea , —+-BFPSH OLE boos © — 885 E844 - (853-0500 95528 eWa 40-PIN (600 mils wide) PLASTIC DUAL IN-LINE (N) PACKAGE ES sg sean i Move we Hon AAAAAAAAAAAAAAAAAA AR 2. Bemtieees nsions contorm to JEDEG specication MS-011-AC for standard dual in-line (DIP) package .600 1 inch row spacing (PLASTIC) 40 leads renner ? Gas (i384) Ody ANd do not include mold flash oF protrusions. Mold ye
1 Bae dm nn ct tn
A RTARTA ASAT ARTA RATATAT RTE 6. Pn sumbers tart wth fin and continue exe ‘counterclockwise to pin’ #40 when viewed from the top. tots ene \\ ee 004 (1.89) 2045 (51.94) 820 (1675) 5 | a | = 7 015 (98) 805 (17.65) 853-0415 84971 NWS November 12, 1990 12
Philips Components-Signetics Memory Products Product Specification 44-PIN PLASTIC LEADED CHIP CARRIER (A) PACKAGE [Llpoz si 7 Te} 295 7659 Soros CASES) FATA seo eoT on voz» 1 PACKAGE DMENSIONS CONOR TO JOE SPECICATION | mae Garis EOL S) 0-047-AL FOR PLASTIC LEADED CHP CARRER 44 LEADS. 050
3 PLACES, al r INCH LEAD SPACING, SQUARE ISSUE A, 10/3184)
Se panos 2 CONTROLLING DMENSONS INCHES HETRIC DMENSIONS IV nn Fy] {ARE SHOWN NI PARENTHESES q B este q p 3) OMENSIONING ANO TOLERANCING PER ANS! THSH-IB82 ‘Sores q p 1 q p BOLT) ATU PLANE CEEJLOCATED AT THE TOP OF HOLO PARTANG UNE Lg p_| A a ncaa ain a te Wk wee te Sa | one =q p PLASTIC B00 q b q b 635 (865) | a q p ue ° (GRE) Teese oatuns 00 nT NCLLOE HOLD FLASH MELD FLASH q Bp ‘PROTRUSION SHALL NOT EXCEED 006" (215 ma) ON ANY SDE oCooS SS See A\\ aT] ano FT) are DETERMINED WHERE THESE CENTER i LUEAOS aT FROW THE BODY AT PLANE LIE) oe 1721 oz 107 3 MAS" 4a tt 7. PIN NUMBERS CONTINUE COUNTERCLOCKWISE TO PIN 46 (TOP. 000 (952) vew BOTT « soes vd = — — SUES OROER CODE FOR PRODUCT PACKAGED NA PLCC 1S eer gp te. aloe THE SUFFIX °A” AFTER THE PRODUCT NUMBER car an . . ve DA APOLEABLE 70 PACKAGES ITH PEDESTAL OMY 1142) ie o32 081) m0 305 Scaecal fp Beress; Baw 2860301 [020105 1H L Wy ‘00 T0131 | CLEARANCE W/o E PeOESTAL PEDESTAL worTowy —seatnc 1 rears lal” Pane a BRET SRE UL 021.053) _ [oor ORIG OLS FTG) e262 SPOS OSES) cenuces O31 03) ees O65 eg 0 600 BS OSES) 0 soo FERRE DICERC) 959-0400 92085 aX i i i November 12, 1990 13
Philips Components-Signetics Memory Products Product Specification Duastenteitenton | Productsuue | Deter i ‘This data sheet contains the design target or goal specications for product development. Spectications | cece aatatn | Femtmeinoaen |e ee ee Preliminary Specification reproduction Product ‘Signetics reserves the right to make changes at any time without notice In order to Improve design and ‘supply the best possibie product. ‘This data sheet contains Final Spectcations. Signetics reserves the right to make changes at any time Product Specification SE ‘Signetics reserves the right to make changes without notice in the products, including circuits, standard cells, and/or software, described or contained herein, in order to improve design and/or performance. Signetics assumes no responsibility or liability for the use of any of these products, conveys | no license or title under any patent, copyright, or mask work right to these products, and makes no representations or warranties that these products | are free from patent, copyright, or mask work infringement, unless otherwise specified. Applications that are described herein for any of these prod- ucts are for illustrative purposes only. Signetics makes no representation or warranty that such applications will be suitable for the specified use without further testing or modification. i UFE SUPPORT APPLICATIONS Signetics Products are not designed for use in life support appliances, devices, or systems where malfunction of a Signetics Product can reasonably be expected to result in a personal injury. Signetics customers using or selling Signetics Products for use in such applications do so at their own risk, and agree to fully indemnify Signetics for any damages resulting from such improper use or sale. ‘Signetics Company ‘Signetics registers eligible circuits under 2 . 811 East Arques Avenue the Semiconductor Chip Protection Act. Si netics P.O. Box 3409 ©Copyright 1990 NAPC. ‘Sunnyvale, California 94088-3409 All rights reserved. Printed in U.S.A. 18 division of North American Phiips Corporstion Telephone 408/991-2000 6232-100 0382N/4M/CR1/1290 nos wi