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Technical content
Features
Unmatched input and output allowing wide frequency range utilization Output impedance fits a 4:1 transformer Device can be used single- -ended or in a push- -pull configuration Qualified up to a maximum of 65 VDD operation Characterized from 30 to 65 V for extended power range High breakdown voltage for enhanced reliability Suitable for linear application with appropriate biasing Integrated ESD protection with greater negative gate- -source voltage range for improved Class C operation Included in NXP product longevity program with assured supply for a minimum of 15 years after launch Typical Applications Industrial, scientific, medical (ISM) – Laser generation – Plasma generation – Particle accelerators – MRI, RF ablation and skin treatment – Industrial heating, welding and drying systems Radio and VHF TV broadcast Aerospace – HF communications – Radar Mobile radio – HF and VHF communications – PMR base stations Document Number: MRFX600H Rev. 0, 09/2018 NXP Semiconductors Technical Data 1.8–400 MHz, 600 W CW, 65 V WIDEBAND RF POWER LDMOS TRANSISTORS MRFX600H MRFX600HS MRFX600GS NI- -780S- -4L MRFX600HS NI- -780H- -4L MRFX600H NI- -780GS- -4L MRFX600GS Figure 1. Pin Connections
42 Drain B
source terminal for the transistor.
Table 1. Maximum Ratings Table 2. Thermal Characteristics
65 Vdc, IDQ(A+B) = 100 mA, 230 MHz
Table 3. ESD Protection Characteristics Table 4. Electrical Characteristics(TA =2 5C unless otherwise noted)
- Continuous use at maximum temperature will affect MTTF.
- MTTF calculator available athttp://www.nxp.com/RF/calculators
- Each side of device measured separately.
Table 4. Electrical Characteristics(TA =2 5C unless otherwise noted)(continued) Table 5. Load Mismatch/Ruggedness(In NXP Production Test Fixture, 50 ohm system) IDQ(A+B) = 100 mA
230 Pulse
2.5 Peak
65 No Device Degradation
Table 6. Ordering Information
- Each side of device measured separately.
- Measurements made with device in straight leadconfiguration before any lead forming operation is applied. Lead forming is used for gull wing
Table 7. 87.5–108 MHz Broadband Performance(In NXP Reference Circuit, 50 ohm system)
Figure 4. MRFX600H 87.5–108 MHz BroadbandReference CircuitComponent Layout Table 8. MRFX600H 87.5–108 MHz Broadband Reference Circuit Component Designations and Values
98 MHz
108 MHz
Figure 5. Power Gain, Drain Efficiency and CW Output Power Figure 6. CW Output Power versus Input Power and Frequency Figure 7. Power Gain and Drain Efficiency versus
87.5 MHz
98 MHz108 MHz
gate to gate, balanced configuration. from drain to drain, balanced configuration. Figure 8. Broadband Series Equivalent Source and Load Impedance – 87.5–108 MHz
Figure 9. 87.5 MHz Harmonics @ 675 W CW
175 MHz –27 dB
262.5 MHz –15 dB
350 MHz –33 dB
Figure 10. MRFX600H Production Test Fixture Component Layout — 230 MHz Table 9. MRFX600H Production Test Fixture Component Designations and Values — 230 MHz
Figure 11. Output Power versus Gate- -Source Figure 12. Output Power versus Input Power Figure 13. Power Gain and Drain Efficiency Figure 14. Power Gain and Drain Efficiency Figure 15. Power Gain versus Output Power
60 V 65 V
230 MHz PRODUCTION TEST FIXTURE
gate to gate, balanced configuration. drain to drain, balanced configuration. Figure 16. Series Equivalent Source and Load Impedance – 230 MHz
MRFX600H MRFX600HS MRFX600GS RF Device Data NXP Semiconductors PACKAGE DIMENSIONS
MRFX600H MRFX600HS MRFX600GS
MRFX600H MRFX600HS MRFX600GS RF Device Data NXP Semiconductors
MRFX600H MRFX600HS MRFX600GS
MRFX600H MRFX600HS MRFX600GS RF Device Data NXP Semiconductors
MRFX600H MRFX600HS MRFX600GS
MRFX600H MRFX600HS MRFX600GS RF Device Data NXP Semiconductors PRODUCT DOCUMENTATION, SOFTWARE AND TOOLS Refer to the following resources to aid your design process. Application Notes AN1908: Solder Reflow Attach Method for High Power RF Devices in Air Cavity Packages AN1955: Thermal Measurement Methodology of RF Power Amplifiers Engineering Bulletins EB212: Using Data Sheet Impedances for RF LDMOS Devices Software Electromigration MTTF Calculator RF High Power Model .s2p File Development Tools Printed Circuit Boards To Download Resources Specific to a Given Part Number: 1. Go tohttp://www.nxp.com/RF 2. Search by part number 3. Click part number link 4. Choose the desired resource from the drop down menu
REVISION HISTORY
The following table summarizes revisions to this document. Revision Date Description 0 Sept. 2018 Initial release of data sheet
MRFX600H MRFX600HS MRFX600GS How to Reach Us: Home Page: nxp.com Web Support: nxp.com/support Information in this document is provided solely to enablesystem and software implementers to use NXP products. There are no express or implied copyright licenses granted hereunder to design or fabricate any integrated circuits based on the information in this document. NXP reserves the right to make changes without further notice to any products herein. NXP makes no warranty, representation, or guarantee regarding the suitability of its products for any particularpurpose, nor does NXP assume any liability arising out of the application or use of any product or circuit, andspecifically disclaims any and all liability, including without limitation consequential or incidental damages. “Typical” parameters that may be provided in NXP data sheets and/or specifications can and do vary in different applications, and actual performance may vary over time. All operating parameters, including “typicals,” must be validated for each customer application by customer’s technical experts. NXP does not convey any license under its patent rights nor the rights of others. NXP sells products pursuant to standard terms and conditions of sale, which can be found at the following address:nxp.com/ SalesTermsandConditions. NXP and the NXP logo are trademarks of NXP B.V. All other product or service names are the property of their respective owners. E 2018 NXP B.V. Document Number: MRFX600H Rev. 0, 09/2018