F2732 FAIRCHILD | Alldatasheet
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32K (4K x 8) UV Erasable PROM MOS Memory Products SS Description Logic Symbol The F2732 is a 32,768-bit ultraviolet light Erasable and electrically Programmable Read Only Memory * 70 (EPROM) manufactured using the Isoplanar n-channel 4 i silicon gate technology. Organized 4096 X 8, the 2 < F2732 is ideally suited for non-volatile data storage in 8—pro applications such as 8-bit microprocessor systems, 71 pao }—9 where reprogrammability, high bit-density, maximum é a2 pa1}—10 performance, and simple interfacing are essential : “ a2 }—11 parameters. All inputs and outputs are TTL- sos £2732 pas [—13 compatible. The 3-state outputs become high as os }—14 impedance when the F2732 is deselected, allowing a ‘dar pas }-15 direct interface capability which is useful in many oa das vas |—16 computer bus structures. 22] ao var }—17 The F2732 operates from a single standard +5 V oa os power supply during reading, making it compatible with the latest generations of microprocessors. VCC = Pin 24 ‘The F2732 programming technique is the simplest VPP = Pin 20 available. All data and address inputs are at TTL VSS = Pin 12 levels during programming. A +25 V power supply is. connected to the G/VPP pin and only those a addresses to be programmed need be selected; therefore total programming time is short and field Connection Diagram corrections straight forward. The technique is 24-Pin DIP compatible with board-level programming making large systems simple to program. ari 2p vee = 4096 x 8-BIT ORGANIZATION “eC? zat] 48 = FAST ACCESS TIME—450 ns MAX as]3 22f as wm TTL-COMPATIBLE INPUTS AND OUTPUTS asta aan @ 3-STATE OUTPUTS FOR WIRED-OR CAPABILITY wads 20L]G/ver @ SINGLE +5 V POWER SUPPLY FOR READ OPERATION a6 19h ato ‘| REDUCED POWER STANDBY MODE ar? whe = SIMPLEST, FASTEST EPROM PROGRAMMING nocfe 17 Hoar TECHNIQUE AVAILABLE © OUTPUT ENABLE CONTROL FOR MEMORY vaol]® 16[) 006 EXPANSION arty 10 15[ pos = STATIC OPERATION poe sal 008 = PIN COMPATIBLE WITH 32K AND 64K ROMs FOR LOW COST PRODUCTION vss(}12 13003 = LOW POWER DURING PROGRAMMING ™ CONTENTS ERASABLE WITH ULTRAVIOLET LIGHT (Top View) Pin Names AQ-A11 Address Inputs Order E Chip Enable (Power Down) Input Package Code G/vPP Output Enable/ +25 V Program input Ceramic DIP D DQ0-DQ7 Data Output/Programming Inputs. voc +5 V Supply vss Ground Se] 410
VCC Supply Voltage -0.3V to +6V Any Input or Output -0.3V to +6 V Operating Temperature (Ambient) 0°C to 70°C Storage Temperature (Ambient) —65°C to + 126°C All voltages with respect to VSS. ‘Stresses greater than those listed under “Absolute Maximum Ratings" may cause permanent damage to the device. This is a stress rating only and functional operation of the device at these ‘or any other conditions exceeding those indicated in the operational sections of these specifications is not implied. Exposure to absolute maximum rating conditions for extended periods of time may affect device reliability, Block Diagram at 7
8 CONTROL
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Mode Selection All voltages referenced to ground ‘Address _ Mode Inputs G/VPP vec Note Read 4 lect/ , lect / Verify D inhibit Program _[HighZ | VuorVin [Vm [Vee tev dt Read Mode dc Electrical Requirements Ta = 0°C to 70°C unless otherwise indicated; all voltages referenced to ground Symbol [Character (Min [Ty [Max [Unt Yoo | Supply Voteoe [ars [so [528 |v Vis [npot HGH Voge zo | |vec F10|¥ Read Mode de Electrical Characteristics Over full range of operating voltage and temperature unless otherwise indicated; typical values are for Ta = 25°C and nominal supply voltages Symbol [Charactorieie Wote 3 [win [Typ [Max [Unt [Note Average Vcc Current 4 lee Active Average Vcc Current 4 Power Down Input Leakage Current : bal (Except G/VPP) HA 5 tour | Output Leakage Carron a CC v Output HIGH Voltage ‘OH loH = —400 yA Output LOW Voltage Vou fio. =2.1mA v Input Capacitance Cine __|6/VPP input Capacitance ee eC | Cour __|Output Capacitance [so fe or Notes on following page. SS 412
Read Mode ac Electrical Characteristics Over full range of operating voltage and temperature unless otherwise indicated Symbol [Charecteritte «Mn «Ma ‘(Unit [Wot ince [Address to Outpal Daay Tine [#80 |r» | toe Output Enable to Output Delay Time [Cit20——“«é‘idCs:~SS~=«*dC'D torr | Output Disable to Output High Impedance [.ft00-—“(=s—séd(rs Cd toa [Adress to Output Hold Time [of re | toe Power-up Delay from E to Outputs Active [450 [ns S| te [Power-down Delay trom E to Outputs OFF [_ [100 |r] Notes 1. Vip OF Vjyq should be selected on Address and Data inputs as desired. 2. Outputs are in the HIGH state allowing Data In to be applied with TTL drivers. 3. All voltage levels are referenced to VSS. 4. Worst case supply currents occur when alll inputs are HIGH (including G = 5.0 V) and the ambient temperature is Ta = 0°C. 5. Measured both with Viyy = 5.25 V and Vi = 0 V. 6. Measured both with Voyy = 6.25 V and G = 5.0. 7. Measured with Viy = 0 V, Ta = 26°C and f = 1.0 MHz, 8. Measured with Vout = OV, Ta = 25°C and f = 1.0 MHz. ‘9. Timing parameters are measured with input logic levels of Vitimax) = 0.8 V and Viexmin) = 2.2 V. Timing measurement reference levels are 1.0 V and 2.0 V for inputs and 0.8 V and 2 V for outputs. An output load of 1 TTL gate plus 100 pF is assumed. Read Mode Timing Diagram Ve ADDRESSES ADDRESS A ADDRESS 8 ve | —_ Vm _—— level Vn é ve ue] fered | torr Vox AS RY Vou cel INVALID OUTPUT DATA EE EE EO el 413
a Erasing Instructions address. Words may be programmed in any order. The contents of the F2732 EPROM can be erased by Programming time for any word regardless of the exposure to high intensity short-wave ultraviolet (UV) number of bits to be programmed is 50 ms; maximum light with a wavelength of 2537 Angstroms (A). programming time for all addresses is 205 s. Once This can be accomplished with ultraviolet light EPROM programmed to a Vo, level a bit of the array can be erasure devices which are available from several U.S. __ changed back to a Vou level by exposing the entire manutacturers. These erasure devices contain a array to a UV source. UV light source which is usually placed approximately ‘one or two inches from the EPROM to illuminate the The programming procedure is as follows: transparent window on top of the device. The minimum 1. Apply Vcc and vss with E at Vin. required integrated dose (intensity x exposure time) 2. Apply Vpp to the G/VPP Input. of UV light energy incident on the window of the 3. Apply Vit and Vij to the Address inputs and outputs device in order to reliably insure complete erasure is to select the data combination to be programmed. 15 W-s/cm?. The UV erasure unit should be 4. Apply a 50 ms wide Vi. pulse to E. periodically calibrated if minimum exposure times are 5. Apply Vi_ to G/VPP and remove the drivers from to be used. (Minimum exposure times range from 10 10 the output. Read out the contents of the memory 45 minutes, depending on model type and age of UV (this verification step is optional). famp.) If longer exposure times are possible, 6. Repeat steps 3 through 5 until all desired data has variations in the output light intensity of the UV light been programmed. source are not critical. 7. Reduce the G/VPP voltage to Vi. to change to the normal read mode. Programming After erasure with a UV source all bits of the memory Caution will be sensed as Voy levels. Any word of the memory Itis recommended that a 0.1 uF capacitor be may have Voy levels programmed into it. All eight connected between G/VPP and ground to prevent outputs are programmed at one time for any selected voltage transients that may damage the device. Program Mode dc Electrical Requirements and Characteristics Ta = 25°C + 6°C Symbol [Characteristic ‘(Min [Typ [Max [Unit [Note Vcc | Supply Votaoe lasso [528 lv | Vin Input HIGH Voltage (Except G/VPP) [20 | —*([Voc +1 Notes on following page. SS 414
Program Mode ac Electrical Characteristics and Requirements Ta = 25°C + 6°C (Note 1) Symbol [Characteratic MN ‘(Typ [Max [Unit [Note ias___[Aderees Set-up Tine 2 > | = in [Address Hold Time a ten [6 Hoa Tine a ton [Data Hoa Tine a a Ps | Notes 1. 40.1 uF capacitor must be connected between G/ VPP. ‘and ground to prevent voltage transients which may damage the device. 2. Vin = 5.25 V to OV.
3 E= Vu
- B= Vy. G= Vy. Program Mode Timing Diagram PROGRAM. PROGRAM VERIFY tas ATA IN STABLE HIGH Z DATA OUT VALIO | tos | oT toe feo Ver tas L Gvep ve toes: tow ton Vou E vi et 415