STL26NM60N STMICROELECTRONICS | Alldatasheet

Document overview

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  • PDF pages: 14

Technical content

Datasheet sections

  • 1 Electrical ratings
  • 2 Electrical characteristics
  • 2.1 Electrical characteristics (curves)
  • 3 Test circuits
  • 4 Package mechanical data
  • 5 Revision history

Features

■ 100% avalanche tested ■ Low input capacitance and gate charge ■ Low gate input resistance

Applications

■ Switching applications

Description

This device is an N-channel MDmesh™ V Power MOSFET based on an innovative proprietary vertical process technology, which is combined with STMicroelectronics’ well-known PowerMESH™ horizontal layout structure. The resulting product has extremely low on- resistance, which is unmatched among silicon- based Power MOSFETs, making it especially suitable for applications which require superior power density and outstanding efficiency. Figure 1. Internal schematic diagram

  1. The value is rated according to R thj-case

Table 1. Device summary

1 Electrical ratings

Table 2. Absolute maximum ratings

  1. The value is rated according to R thj-case
  2. When mounted on FR-4 board of inch², 2oz Cu
  3. I SD ≤ 19 A, di/dt ≤ 400 A/µs, VDS peak≤ V(BR)DSS, VDD = 80% V(BR)DSS

Table 3. Thermal data

  1. When mounted on 1inch² FR-4 board, 2 oz Cu

2 Electrical characteristics

Table 4. On /off states Table 5. Dynamic

  1. C oss eq. time related is defined as a constant equivalent capacitance giving the same charging time as Coss

Table 6. Switching times Table 7. Source drain diode

  1. Pulse width limited by safe operating area
  2. Pulsed: pulse duration = 300 µs, duty cycle 1.5%

2.1 Electrical characterist ics (curves)

Figure 2. Safe operating area Figure 3. Thermal impedance Figure 4. Output characteristics Figure 5. Transfer characteristics Figure 6. Normalized V DS vs temperature Figure 7. Static drain-source on resistance

3 Test circuits

Figure 13. Switching times test circuit for Figure 14. Gate charge test circuit Figure 15. Test circuit for inductive load Figure 16. Unclamped inductive load test Figure 17. Unclamped inductive wavefor m Figure 18. Switching time waveform

4 Package mechanical data

In order to meet environmental requirements, ST offers these devices in different grades of ECOPACK® packages, depending on their level of environmental compliance. ECOPACK® specifications, grade definitions and product status are available at: www.st.com. ECOPACK is an ST trademark.

Table 8. PowerFLAT™ 8x8 HV mechanical data

Figure 19. PowerFLAT™ 8x8 HV drawing mechanical data

Figure 20. PowerFLAT™ 8x8 HV recommended footprint

5 Revision history

Table 9. Document revision history 14-Feb-2011 1 First release. 03-Nov-2011 2 Section 4: Package mechanical data has been updated.