2622GY VBSEMI | Alldatasheet

Document overview

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Technical content

FEATURES

Halogen-free According to IEC61249-2-21 Definition Low On-Resistance: 1.8 Ω Low Threshold: 2 V (typ.) Low Input Capacitance: 30 pF Fast Switching Speed: 25 ns Low Input and Output• Leakage

  • TrenchFET® Power MOSFET
  • Compliant to RoHS Directive 2002/95/EC BENEFITS  Low Offset Voltage  Low-Voltage Operation  Easily Driven Without Buffer  High-Speed Circuits  Low Error Voltage

APPLICATIONS

 Direct Logic-Level Interface: TTL/CMOS  Drivers: Relays, Solenoids, Lamps, Hammers, Display, Memories, Transistors, etc.  Battery Oper ated Systems  Solid-State Relays Notes: a. Pulse width limited by maximum junction temperature. b. Surface Mounted on FR4 board. * Pb containing terminations are not RoHS compliant, exemptions may apply. ABSOLUTE MAXIMUM RATINGS TA = 25 °C, unless otherwise noted Parameter Symbol Limit Unit VDrain-Source Voltage DS 60 VVGate-Source Voltage GS ± 20 TA Continuous Drain Current (TJ = 150 °C)b = 25 °C ID 350 TA mA = 100 °C 230 Pulsed Drain Currenta IDM 900 TA Power Dissipationb = 25 °C PD 0.45 WTA = 100 °C 0.24 Maximum Junction-to-Ambientb RthJA 350 °C/W TJ, TOperating Junction and Storage Temperature Range stg - 55 to 150 °C 2622GY-VB www.VBsemi.com PRODUCT SUMMARY RDS(on) (Ω)I DVDS (V) (mA) 1.8 at VGS60 = 10 V 350 Dual N-Channel 60 V (D-S) MOSFET TSOP-6 Top View 2.85 mm 3 mm D2 G2 S1 S2 D1 G1 N-Channel MOSFET G 1 D 1 S 1 N-Channel MOSFET G 2 D 2 g S 2 2622GY-VB Datasheet

Notes: a. For DESIGN AID ONLY, not subject to production testing. b. Pulse test: PW ≤ 300 µs duty cycle ≤ 2 %. c. Switching time is essentially independent of operating temperature. Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. SPECIFICATIONS TA = 25 °C, unless otherwise noted Parameter Symbol Test Conditions Limits Min. Typ. Unit a Max. Static VDrain-Source Breakdown Voltage DS VGS = 0 V, ID = 10 µA 60 VVGate-Threshold Voltage GS(th) VDS = VGS, ID = 250 µA 12 .5 VDS = 0 V, VGS = ± IGate-Body Leakage GSS

20 V ± 10

µAVDS = 0 V, VGS = ± 15 V 1 VDS = 0 V, VGS = ± 10 V ± 150 nA VDS = 0 V, VGS = ± 10 V, TJ = 85 °C ± 1000 VDS = 0 V, VGS = ± 5 V ± 100 VDS = 60 V, VGS IZero Gate Voltage Drain Current DSS = 0 V 1 µAVDS = 60 V, VGS = 0 V , TJ = 125 °C 500 On-State Drain Currenta VGS = 10 V, VDS ID(on) = 7.5 V 800 mAVGS = 4.5 V, VDS = 10 V 500 Drain-Source On-Resistancea VGS = 10 V, ID RDS(on) = 500 mA 1.8 ΩVGS = 4.5 V, ID = 200 mA 3 Forward Transconductancea gfs VDS = 10 V, ID = 200 mA 100 mS VDiode Forward Voltage SD IS = 200 mA, VGS = 0 V 1.3 V Dynamica VDS = 10 V, VGS = 4.5 V ID ≅QTotal Gate Charge g 250 mA 0.6 0.8 nC CInput Capacitance iss VDS = 25 V, VGS = 0 V f = 1 MHz C pFOutput Capacitance oss 6 CReverse Transfer Capacitance rss 2.5 Switchinga, b, c VDD = 30 V, RL = 150 Ω ID ≅ 200 mA, VGEN = 10 V, RG = 10 tTurn-On Time d(on) Ω nstTurn-Off Time d(off) 35 2622GY-VB www.VBsemi.com g

25 °C, unless otherwise noted Output Characteristics On-Resistance vs. Drain Current Gate Charge 0.0 0.2 0.4 0.6 0.8 1.0 012 345 I VDS - Drain-to-Source Voltage (V) - Drain Current (A)D VGS = 10 V 3 V 5 V 4 V

6 V7 V

4.0 3.5 3.0 2.5 2.0 1.5 1.0 0.5 0.0 0 200 400 600 800 1000 ID - Drain Current (mA) V GS = 4.5 V RDS(on) - On-Resistance (Ω V GS = 10 V VDS = 10 V ID = 250 mA VGS - Gate-to-Source V Qg - Total Gate Charge (nC) oltage (V) Transfer Characteristics Capacitance On-Resistance vs. Junction Temperature 300 600 900 1200 0123456 VGS - Gate-to-Source Voltage (V) ID - Drain Current (mA) T J = - 55 °C 125 °C 25 °C 0 5 10 15 20 25 VDS - Drain-to-Source Voltage (V) C - Capacitance (pF) C Crss oss Ciss VGS = 0 V 0.0 0.4 0.8 1.2 1.6 2.0 - 50 - 25 2 5 5 0 7 0 5 100 125 150 TJ - Junction Temperature (°C) V GS = 10 V at 500 mA RDS(on) (Normaliz V GS = 4.5 V at 200 mA ed) - On-Resistance 2622GY-VB www.VBsemi.com g

TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted Source-Drain Diode Forward Voltage Threshold Voltage Variance Over Temperature 1.2 1.5 100 1000 0.0 0.3 0.6 0.9 TJ = 125 °C I S - VSD - Source-to-Drain Voltage (V) Source Current (A)10 TJ = - 55 °C V GS = 0 V TJ = 25 °C VGS(th) Variance (V) - 0.8 - 0.6 - 0.4 - 0.2 0.0 0.2 0.4 - 50 0 2 5 5 0 7 - 25 5 100 125 150 I D = 250 µA On-Resistance vs. Gate-Sou TJ - Junction Temperature (°C) rce Voltage Single Pulse Power, Junction-to-Ambient 02468 10 V GS - Gate-to-Source Voltage (V) ID = 500 mAID = 200 mA RDS(on) - On-Resistance (Ω) 0.01 2.5 100 600 0.1 Power (W) Time (s) 1.5 0.5 T A = 25 °C Normalized Thermal Transient Impedance, Junction-to-Ambient 10 10 -3 10 -2 110 10 600-1 -4 100 0.1 0.01 0.2 0.1 0.05 0.02 Single Pulse Duty Cycle = 0.5 Normaliz Square Wave Pulse Duration (s) ed Ef fective T ransient Thermal Impedance 1. Duty Cycle, D = t 1 t 2. Per Unit Base = R th JA = 350 °C/W 3. T JM - TA = PDMZthJA(t) t 1 t 2 Notes: 4. Surface Mounted P DM 2622GY-VB www.VBsemi.com g

Normalized Thermal Transient Impedance, Junction-to-Foot 10 -3 10 -2 1 10 10 10-1 -4 0.1 0.01 0.2 0.1 0.05 0.02 Single Pulse Duty Cycle = 0.5 Normalized Ef f Square Wave Pulse Duration (s) ective T ransient Thermal Impedance THERMAL RATINGS (TA = 25 °C, unless otherwise no ted) Note

  • The characteristics shown in the two gr aphs - Normalized Transient Thermal Impedance Junction-to-Ambient (25 °C) - Normalized Transient Thermal Impedance Junction-to-Foot (25 °C) are given for general guidelines only to enable the user to get a “ball park” indication of part capabilities. The data are extracted from single pulse transient thermal im pedance charac teristics which are de veloped fr om empirical m easurements. The la tter is va lid for the part mounted on printed circuit board - FR 4, size 1" x 1" x 0.062", double sided with 2 oz. copper, 100 % on both sides. The part ca pabilities can widely vary depending on actual application parameters and operating conditions. 2622GY-VB www.VBsemi.com g

L 5 4 R R C 0.15 M B A b C 0.08

0.17 Ref

-C- ne A 1 A 2 A -A- D -B- E 1 E L 2 (L 1 ) c 4x 1 e 2 3 6 5 4 C 0.15 M B A b -B- E 1 E e 5-LEAD TSOP TSOP: 5/6−LEAD JEDEC Part 6-LEAD TSOP 4x 1 Number: MO-193C MILLIMETERS INCHES Dim Min Nom Max Min Nom Max A 0.91 - 1.10 0.036 - 0.043 A 1 0.01 - 0.10 0.0004 - 0.004 e 0.95 BSC 0.0374 BSC L 0.32 - 0.50 0.012 - 0.020 L 1 0.60 Ref 0.024 Ref L 2 0.25 BSC 0.010 BSC 0 4 8 0 4 8 1 7 Nom 7 Nom ECN: C-06593-Rev. I, 18-Dec-06 DWG: 5540 2622GY-VB www.VBsemi.com g

RECOMMENDED MINIMUM PADS FOR TSOP-6 0.119 (3.023) Recommended Minimum Pads Dimensions in Inches/(mm) 0.099 (2.510) 0.028 0.064 (1.626)(0.699) 0.039 (1.001) 0.020 (0.508) 0.019 (0.493) 2622GY-VB www.VBsemi.com g

All products due to improve reliability, function or design or for other reasons, product specifications and data are subject to change without notice. Taiwan VBsemi Electronics Co., Ltd., branches, agents, employees, and all persons acting on its or their representatives (collectively, the "Taiwan VBsemi"), assumes no responsibility for any errors, inaccuracies or incomplete data contained in the table or any other any disclosure of any information related to the product.(www.VBsemi.com) Taiwan VBsemi makes no guarantee, representation or warranty on the product for any particular purpose of any goods or continuous production. To the maximum extent permitted by applicable law on Taiwan VBsemi relinquished: (1) any application and all liability arising out of or use of any products; (2) any and all liability, including but not limited to special, consequential damages or incidental ; (3) any and all implied warranties, including a particular purpose, non-infringement and merchantability guarantee. Statement on certain types of applications are based on knowledge of the product is often used in a typical application of the general product VBsemi Taiwan demand that the Taiwan VBsemi of. Statement on whether the product is suitable for a particular application is non-binding. It is the customer's responsibility to verify specific product features in the products described in the specification is appropriate for use in a particular application. Parameter data sheets and technical specifications can be provided may vary depending on the application and performance over time. All operating parameters, including typical parameters must be made by customer's technical experts validated for each customer application. Product specifications do not expand or modify Taiwan VBsemi purchasing terms and conditions, including but not limited to warranty herein. Unless expressly stated in writing, Taiwan VBsemi products are not intended for use in medical, life saving, or life sustaining applications or any other application. Wherein VBsemi product failure could lead to personal injury or death, use or sale of products used in Taiwan VBsemi such applications using client did not express their own risk. Contact your authorized Taiwan VBsemi people who are related to product design applications and other terms and conditions in writing. The information provided in this document and the company's products without a license, express or implied, by estoppel or otherwise, to any intellectual property rights granted to the VBsemi act or document. Product names and trademarks referred to herein are trademarks of their respective representatives will be all. MaterialCategoryPolicy Taiwan VBsemi Electronics Co., Ltd., hereby certify that all of the products are determined to be RoHS compliant and meets the definition of restrictions under Directive of the European Parliament 2011/65 / EU, 2011 Nian. 6. 8 Ri Yue restrict the use of certain hazardous substances in electrical and electronicequipment(EEE)-modification,unlessotherwisespecifiedasinconsistent.(www.VBsemi.com) PleasenotethatsomedocumentsmaystillrefertoTaiwanVBsemiRoHSDirective2002/95/EC.We confirm that all products identified as consistent with the Directive 2002/95 / EC European Directive 2011/65/. Taiwan VBsemi Electronics Co., Ltd. hereby certify that all of its products comply identified as halogen-free halogen-free standards required by the JEDEC JS709A. Please note that some Taiwanese VBsemi documents still refer to the definition of IEC 61249-2-21, and we are sure that all products conformtoconfirmcompliancewithIEC61249-2-21standardlevelJS709A. 2622GY-VB www.VBsemi.com