25TTS08FP IRF | Alldatasheet
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Bulletin I2135 rev. D 03/99 SAFEIR Series 25TTS..FP VT < 1.25V @ 16A ITSM = 300A VRRM 800 to 1600V www.irf.com Description/Features The 25TTS..FP SAFE IR series of silicon controlled rectifiers are specifically designed for medium power switching and phase control applications. The glass passivation technology used has reliable operation up to 125° C junction temperature. Typical applications are in input rectification (soft start) and these products are designed to be used with International Rectifier input diodes, switches and output rectifiers which are available in identical package outlines. Fully isolated package (VINS = 2500 VRMS ) UL E78996 approved Major Ratings and Characteristics TO-220 FULLPAK Capacitive input filter TA = 55°C, TJ = 125°C, 18 22 A common heatsink of 1°C/W Output Current in Typical Applications Applications Single-phase Bridge Three-phase Bridge Units IT(AV) Sinusoidal 16 A waveform IRMS 25 A VRRM / VDRM up to 1600 V ITSM 300 A VT @ 16 A, TJ = 25°C 1.25 V dv/dt 500 V/µs di/dt 150 A/µs T J - 40 to 125 °C Characteristics 25TTS..FP Units Package Outline
25TTS..FP SAFEIR Series Bulletin I2135 rev. D 03/99 www.irf.com Part Number VRRM , maximum V DRM , maximum I RRM /IDRM peak reverse voltage peak direct voltage 125°C VV m A 25TTS08FP 800 800 10 25TTS12FP 1200 1200 25TTS16FP 1600 1600 Voltage Ratings IT(AV) Max. Average On-state Current 16 A @ T C = 85° C, 180° conduction half sine wave IRMS Max. RMS On-state Current 25 ITSM Max. Peak One Cycle Non-Repetitive 300 10ms Sine pulse, rated VRRM applied Surge Current 350 10ms Sine pulse, no voltage reapplied I2t Max. I 2t for fusing 450 A 2s 10ms Sine pulse, rated VRRM applied 630 10ms Sine pulse, no voltage reapplied I2√t Max. I2√t for fusing 6300 A 2√s t = 0.1 to 10ms, no voltage reapplied VTM Max. On-state Voltage Drop 1.25 V @ 16A, TJ = 25°C rt On-state slope resistance 12.0 m Ω TJ = 125°C VT(TO) Threshold Voltage 1.0 V IRM /IDM Max.Reverse and Direct 0.5 mA T J = 25 °C Leakage Current 10 T J = 125 °C IH Holding Current Typ. Max. Anode Supply = 6V, Resistive load, Initial IT=1A -- 100 mA 25TTS08FP, 25TTS12FP 100 150 25TTS16FP IL Max. Latching Current 200 mA Anode Supply = 6V, Resistive load dv/dtMax. Rate of Rise of off-state Voltage 500V/µs di/dtMax. Rate of Rise of turned-on Current 150A/µs Absolute Maximum Ratings Parameters 25TTS..FP Units Conditions VR = rated VRRM / VDRM
25TTS..FP SAFEIR Series Bulletin I2135 rev. D 03/99 www.irf.com Triggering PGM Max. peak Gate Power 8.0 W PG(AV) Max. average Gate Power 2.0 + IGM Max. paek positive Gate Current 1.5 A - VGM Max. paek negative Gate Voltage 10 V IGT Max. required DC Gate Current 60 mA Anode supply = 6V, resistive load, T J = - 10°C to trigger 45 Anode supply = 6V, resistive load, T J = 25°C
20 Anode supply = 6V, resistive load, T J = 125°C
VGT Max. required DC Gate Voltage 2.5 V Anode supply = 6V, resistive load, T J = - 10°C to trigger 2.0 Anode supply = 6V, resistive load, T J = 25°C
1.0 Anode supply = 6V, resistive load, T J = 125°C
VGD Max. DC Gate Voltage not to trigger0.25 T J = 125°C, VDRM = rated value IGD Max. DC Gate Current not to trigger 2.0 mA T J = 125°C, VDRM = rated value Parameters 25TTS..FP Units Conditions Switching Parameters 25TTS..FP Units Conditions tgt Typical turn-on time 0.9 µs T J = 25°C trr Typical reverse recovery time 4 T J = 125°C tq Typical turn-off time 110 TJ Max. Junction Temperature Range - 40 to 125 °C Tstg Max. Storage Temperature Range - 40 to 125 R thJC Max. Thermal Resistance Junction 1.5 °C/W DC operation to Case R thJA Max. Thermal Resistance Junction 62 to Ambient R thCS Typ. Thermal Resistance Case 1.5 Mounting surface, smooth and greased to Heatsink wt Approximate Weight 2 (0.07) g (oz.) T Mounting Torque Min. 6 (5) Max. 12 (10) Case Style TO-220 FULLPAK (94/V0) Thermal-Mechanical Specifications Parameters 25TTS..FP Units Conditions Kg-cm (Ibf-in)
25TTS..FP SAFEIR Series Bulletin I2135 rev. D 03/99 www.irf.com Fig. 1 - Current Rating Characteristics Fig. 2 - Current Rating Characteristics Fig. 3 - On-state Power Loss Characteristics Fig. 4 - On-state Power Loss Characteristics Fig. 5 - Maximum Non-Repetitive Surge Current Fig. 6 - Maximum Non-Repetitive Surge Current 0 4 8 12 16 20 RMS Limit Conduction Angle Maximum Average On-state Power Loss (W) Average On-state Current (A) 180° 120° 90° 60° 30° 25TTS.. Series T = 125°CJ 0 5 10 15 20 25 30 DC 180° 120° 90° 60° 30° RMS Limit Conduction Period Maximum Average On-state Power Loss (W) Average On-state Current (A) 25TTS.. Series T = 125°CJ 150 200 250 300 350 1 10 100 Number Of Equal Amplitude Half Cycle Current Pulses (N) Peak Half Sine Wave On-state Current (A) Initial T = 125°C @ 60 Hz 0.0083 s @ 50 Hz 0.0100 s J 25TTS.. Series At Any Rated Load Condition And With Rated V Applied Following Surge.RRM 100 150 200 250 300 350 400 0.01 0.1 1 Peak Half Sine Wave On-state Current (A) Pulse Train Duration (s) Maximum Non Repetitive Surge Current Versus Pulse Train Duration. Control Of Conduction May Not Be Maintained. Initial T = 125°C No Voltage Reapplied Rated V ReappliedRRM J 25TTS.. Series 100 110 120 130 0 5 10 15 20 30° 60° 90° 120° 180° Maximum Allowable Case Temperature (°C) Conduction Angle Average On-state Current (A) 25TTS.. Series R (DC) = 1.5 °C/WthJC 100 110 120 130 0 5 10 15 20 25 30 DC 30° 60° 90° 120°180° Maximum Allowable Case Temperature (°C) Conduction Period Average On-state Current (A) 25TTS.. Series R (DC) = 1.5 °C/WthJC
25TTS..FP SAFEIR Series Bulletin I2135 rev. D 03/99 www.irf.com Fig. 7 - On-state Voltage Drop Characteristics Fig. 9 - Gate Characteristics Fig. 8 - Thermal Impedance ZthJC Characteristics 100 1000 012345 T = 25°CJ Instantaneous On-state Current (A) Instantaneous On-state Voltage (V) T = 125°CJ 25TTS.. Series 0.1 100 0.001 0.01 0.1 1 10 100 (b) (a) Rectangular gate pulse (4) (3) (2) (1) Instantaneous Gate Current (A) Instantaneous Gate Voltage (V) TJ = 25 °C TJ = 125 °C b)Recommended load line for Frequency Limited by PG(AV) a)Recommended load line for rated di/dt: 10 V, 20 ohms tr = 0.5 µs, tp >= 6 µs TJ = -10 °C 25TTS.. SeriesIGD VGD <= 30% rated di/dt: 10 V, 65 ohms tr = 1 µs, tp >= 6 µs (1) PGM = 40 W, tp = 1 ms (2) PGM = 20 W, tp = 2 ms (3) PGM = 8 W, tp = 5 ms (4) PGM = 4 W, tp = 10 ms 0.01 0.1 0.0001 0.001 0.01 0.1 1 10 Square Wave Pulse Duration (s) D = 0.50 D = 0.33 D = 0.25 D = 0.17 D = 0.08 Steady State Value (DC Operation) 25TTS.. Series thJC Single Pulse Transient T hermal Impedance Z (°C/W)
25TTS..FP SAFEIR Series Bulletin I2135 rev. D 03/99 www.irf.com Outline T able
25 T T S 16 FP
1 - Current Rating, RMS value 2 - Circuit Configuration: T = Single Thyristor T = TO-220AC 4 - Type of Silicon: S = Converter Grade 5 - Voltage code: Code x 100 = VRRM 6 - TO-220 FULLPAK Ordering Information T able 08 = 800V 12 = 1200V 16 = 1600V (G) 3 (A) 1 (K) 5°± 0.5° 3.13.3 13.5 13.7 R0. 5 R0.7 (2 PLACES) 3.1 HOLE ø 3.4 10.4 0.7 4.6 5°± 0.5° 4.8 0.9 2.54 TYP. 10.6 16.4 16.0 3.7 7.1 0.48 2.85 2.8 1.4 1.15 15.4 3.2 6.7 15.8 1.05 1.3 0.44 2.65 2.6 TY P. 10° 2.54 TYP. Dimensions in millimeters (and inches)
25TTS..FP SAFEIR Series Bulletin I2135 rev. D 03/99 www.irf.com EUROPEAN HEADQUARTERS: Hurst Green, Oxted, Surrey RH8 9BB, U.K. Tel: ++ 44 1883 732020. Fax: ++ 44 1883 733408. IR CANADA: 15 Lincoln Court, Brampton, Markham, Ontario L6T3Z2. Tel: (905) 453 2200. Fax: (905) 475 8801. IR GERMANY: Saalburgstrasse 157, 61350 Bad Homburg. Tel: ++ 49 6172 96590. Fax: ++ 49 6172 965933. IR ITALY: Via Liguria 49, 10071 Borgaro, Torino. Tel: ++ 39 11 4510111. Fax: ++ 39 11 4510220. IR FAR EAST:K&H Bldg., 2F, 30-4 Nishi-Ikebukuro 3-Chome, Toshima-Ku, Tokyo, Japan 171. Tel: 81 3 3983 0086. IR SOUTHEAST ASIA: 1 Kim Seng Promenade, Great World City West Tower,13-11, Singapore 237994. Tel: ++ 65 838 4630. http://www.irf.com Fax-On-Demand: +44 1883 733420 Data and specifications subject to change without notice.