25TTS12STRR

25TTS IRF | Alldatasheet

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25TTS..S SERIES VT < 1.25V @ 16A ITSM = 250A VR/ VD = 1200V Major Ratings and Characteristics D 2 PAK (SMD-220) IT(AV) Sinusoidal 16 A waveform IRMS 25 A V RRM / V DRM 800 and 1200 V ITSM 250 A V T @ 16 A, TJ = 25°C 1.25 V dv/dt 500 V/µs di/dt 150 A/µs T J - 40 to 125 °C Characteristics 25TTS..S Units Output Current in Typical Applications TA = 55°C, TJ = 125°C, footprint 300mm2 NEMA FR-4 or G10 glass fabric-based epoxy 3.5 5.5with 4 oz (140µm) copper Aluminum IMS, RthCA = 15°C/W 8.5 13.5 A Aluminum IMS with heatsink, RthCA = 5°C/W 16.5 25.0 Applications Single-phase Bridge Three-phase Bridge Units Description/Features The 25TTS..S new series of silicon controlled rectifiers are specifically designed for medium power switching and phase control applications. The glass passivation technology used has reli- able operation up to 125° C junction temperature. Typical applications are in input rectification (soft start) and these products are designed to be used with International Rectifier input diodes, switches and output rectifiers which are available in identi- cal package outlines.

25TTS.. S Series Part Number VRRM , maximum V DRM , maximum I RRM /IDRM peak reverse voltage peak direct voltage 125°C VV m A 25TTS08S 800 800 5 25TTS12S 1200 1200 Voltage Ratings IT(AV) Max. Average On-state Current 16 A 50% duty cycle @ T C = 94° C, sinusoidal wave form IRMS Max. RMS On-state Current 25 ITSM Max. Peak One Cycle Non-Repetitive 210 10ms Sine pulse, rated VRRM applied Surge Current 250 10ms Sine pulse, no voltage reapplied I2t Max. I 2t for fusing 220 A 2s 10ms Sine pulse, rated VRRM applied 310 10ms Sine pulse, no voltage reapplied I2√t Max. I2√t for fusing 3100 A 2√s t = 0.1 to 10ms, no voltage reapplied VTM Max. On-state Voltage Drop 1.25 V @ 16A, T J = 25°C rt On-state slope resistance 12.0 m Ω TJ = 125°C VT(TO) Threshold Voltage 1.0 V IRM /IDM Max.Reverse and Direct 0.5 mA T J = 25 °C Leakage Current 5.0 T J = 125 °C IH Max. Holding Current 100 mA Anode Supply = 6V, Resistive load, Initial I T=1A IL Max. Latching Current 200 mA Anode Supply = 6V, Resistive load dv/dt Max. rate of rise of off-state Voltage 500 V/µs di/dt Max. rate of rise of turned-on Current 150 A/µs Absolute Maximum Ratings Parameters 25TTS..S Units Conditions VR = rated VRRM / VDRM

25TTS.. S Series Triggering PGM Max. peak Gate Power 8.0 W PG(AV) Max. average Gate Power 2.0 + IGM Max. paek positive Gate Current 1.5 A - VGM Max. paek negative Gate Voltage 10 V IGT Max. required DC Gate Current 60 mA Anode supply = 6V, resistive load, T J = - 10°C to trigger 45 Anode supply = 6V, resistive load, T J = 25°C

20 Anode supply = 6V, resistive load, T J = 125°C

VGT Max. required DC Gate Voltage 2.5 V Anode supply = 6V, resistive load, T J = - 10°C to trigger 2.0 Anode supply = 6V, resistive load, T J = 25°C

1.0 Anode supply = 6V, resistive load, T J = 125°C

VGD Max. DC Gate Voltage not to trigger0.25 T J = 125°C, VDRM = rated value IGD Max. DC Gate Current not to trigger 2.0 mA T J = 125°C, VDRM = rated value Parameters 25TTS..S Units Conditions Switching Parameters 25TTS..S Units Conditions tgt Typical turn-on time 0.9 µs T J = 25°C trr Typical reverse recovery time 4 T J = 125°C tq Typical turn-off time 110 TJ Max. Junction Temperature Range - 40 to 125 °C Tstg Max. Storage Temperature Range - 40 to 125 °C Soldering Temperature 240 °C for 10 seconds (1.6mm from case) R thJC Max. Thermal Resistance Junction 1.1 °C/W DC operation to Case R thJA Typ. Thermal Resistance Junction 40 °C/W to Ambient (PCB Mount) wt Approximate Weight 2 (0.07) g (oz.) T Case Style D 2 Pak (SMD-220) Thermal-Mechanical Specifications Parameters 25TTS..S Units Conditions When mounted on 1" square (650mm2) PCB of FR-4 or G-10 material 4 oz (140µm) copper 40°C/W For recommended footprint and soldering techniques refer to application note #AN-994

25TTS.. S Series Fig. 2 - Current Rating Characteristics Fig. 3 - On-state Power Loss Characteristics Fig. 4 - On-state Power Loss Characteristics Fig. 6 - Maximum Non-Repetitive Surge Current Fig. 7 - Maximum Non-Repetitive Surge Current Fig. 1 - Current Rating Characteristics 100 105 110 115 120 125 0 2 4 6 8 10 12 14 16 18 30° 60° 90° 120° 180° Condu ct i on Angl e 25TTS.. Series R (DC) = 1.1 K/WthJC Average On-state Current (A) Maximum Allowable Case Temperature (°C) 85 100 105 110 115 120 125 0 5 10 15 20 25 30 DC 30° 60° 90° 120° 180° Maximum Allowable Case Temperature (°C) Conduction Period 25TTS.. Series R (DC) = 1.1 K/WthJC Average On-state Current (A) 0 5 10 15 20 RMS Limit 180° 120° 90° 60° 30° Conduction Angle 25TTS.. T = 125°C J Average On-state Current (A) Maximum Average On-state Power Loss (W) 0 5 10 15 20 25 30 DC 180° 120° 90° 60° 30° RMS Limit Conduction Period Average On-state Current (A) Maximum Average On-state Power Loss (W) 25TTS.. T = 125°C J 110 130 150 170 190 210 230 1 10 100 Number Of Equal Amplitude Half Cycle Current Pulses (N) At Any Rated Load Condition And With Rated V Applied Following Surge. 25TTS..Series Initial T = 125°C @ 60 Hz 0.0083 s @ 50 Hz 0.0100 s RRM J Peak Half Sine Wave On-state Current (A) 70 110 130 150 170 190 210 230 250 270 0.01 0.1 1 10 Pulse Train Duration (s) Maximum Non Repetitive Surge Current Peak Half Sine Wave Forward Current (A) Versus Pulse Train Duration. Initial T = 125°C No Voltage Reapplied Rated V Reapplied J RRM 25TTS.. Series

25TTS.. S Series Fig. 7 - On-state Voltage Drop Characteristics Fig. 8 - Gate Characteristics Fig. 9 - Thermal Impedance ZthJC Characteristics 100 1000 012345 T = 25°CJ T = 125°CJ 25TTS.. Series Instantaneous On-state Voltage (V) Instantaneous On-state Current (A) 0.1 100 0.001 0.01 0.1 1 10 100 (b) (a) Rectangular gate pulse (4) (3) (2) (1) Instantaneous Gate Curren t (A) Instantaneous Gate Voltage (V) TJ = 25 °C TJ = 1 25 °C b)Recommended load line for VGD IG D Frequency Limited by PG(AV)25TTS.. a)Recommended load line for rated di/dt: 10 V, 20 ohms tr = 0.5 µs, tp >= 6 µs <= 30% rated di/dt: 10 V, 65 ohms tr = 1 µs, tp >= 6 µs (1) PGM = 40 , tp = 1 ms (2) PGM = 20 W, tp = 2 ms (3) PGM = 8 W, tp = 5 ms (4) PGM = 4 W, tp = 10 ms TJ = -10 °C 0.01 0.1 0.0001 0.001 0.01 0.1 1 Square Wave Pulse Duration (s) thJC Steady State Value (DC Operation) Transient Thermal Impedance Z (K/W) 25TTS.. Series Single Pulse D = 0.50 D = 0.33 D = 0.25 D = 0.17 D = 0.08

25TTS.. S Series 9G3A 25TTS12S 9512 EXAMPLE: THIS IS AN 25TTS12S INTERNATIONAL RECTIFIER LOGO PART NUMBER Marking Information DATE CODE (YYWW) YY = YEAR WW = WEEK ASSEMBLY LOT CODE Tape & Reel Information Dimensions in millimeters and inches TRR FEED DIRECTION TRL FEED DIRECTION 10 .90 (0.429) 15 .90 (0.626) 1.75 (0.069) 1.25 (0.049) 1.85 (0.073) 1.65 (0.065) 4.10 (0.161) 3.90 (0.153) 1.60 (0.063) 1.50 (0.059) DIA. 1.60 (0.063) 1.50 (0.059) DIA. 11.60 (0.457) 11.40 (0.449) 15.42 (0.609) 15.22 (0.601) 4.72 (0.186) 4.52 (0.178) 24.30 (0.957) 23.90 (0.941) 0.368 (0.0145) 0.342 (0.0135) 360 (14.173) DIA. MAX. 26.40 (1.039) 24.40 (0.961) 13.50 (0.532) 12.80 (0.504)DIA. 60 (2.362) DI A. MI N. SMD-220 Tape & Reel When ordering, indic ate th e part number, part orientation, and the quantity. Qu antitie s are in multiples of 800 pieces per reel for both TRL and TRR. (K) (G) (A)

25TTS.. S Series Outline Table (K) (G) 1 (K) Cathode 2 (A) Anode 3 (G) Gate (A) 10.16 (0.40) REF. 8.89 (0.35) 4.57 (0.18) 4.32 (0.17) 0.61 (0.02) MA X. 5.08 (0.20) REF. 1.32 (0.05) 1.22 (0.05) 6.47 (0.25) 6.18 (0.24)93° REF. 2.61 (0.10) 2.32 (0.09) 5.28 (0.21) 4.78 (0.19) 4.69 (0.18) 4.20 (0.16) 0.55 (0.02) 0.46 (0.02) 14.73 (0.58) 15.49 (0.61) 1.40 (0.055) 1.14 (0.045)3X 0.93 (0.37) 0.69 (0.27)2X 11.43 (0.45) 17.78 (0.70) 8.89 (0.35) 3.81 (0.15) 2.08 (0.08) 2X 2.54 (0.10) MINIMUM RECOMMENDED FOOTPRINT

25 T T S 12 S TRL

Ordering Information Table 1 - Current Rating, RMS value 2 - Circuit Configuration T = Single Thyristor T = TO-220AC 4 - Type of Silicon S = Converter Grade 5 - Voltage code: Code x 100 = VRRM 6 - S = TO-220 D 2Pak (SMD 220) Version 7 - Tape and Reel Option TRL = Left Reel TRR = Right Orientation Reel 08 = 800V 12 = 1200V Dimensions in millimeters and inches (G) 3 (A) 1 (K)