25TTS12PBF

25TTS12PBF IRF | Alldatasheet

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The 25TTS.. SAFEIR series of silicon controlled rectifiers are specifically designed for medium power switching and phase control applications. The glass passivation technology used has reli- able operation up to 125°C junction temperature. Typical applications are in input rectification (soft start) and these products are designed to be used with International Rectifier input diodes, switches and output rectifiers which are available in identical package outlines. Major Ratings and Characteristics TO-220 Capacitive input filter TA = 55°C, TJ = 125°C, 18 22 A common heatsink of 1°C/W Output Current in Typical Applications Applications Single-phase Bridge Three-phase Bridge Units IT(AV) Sinusoidal 16 A waveform IRMS 25 A VRRM/ VDRM 1200 V ITSM 300 A VT @ 16 A, TJ = 25°C 1.25 V dv/dt 500 V/µs di/dt 150 A/µs T J - 40 to 125 °C Characteristics Values Units Package Outline PHASE CONTROL SCR Lead-Free ("PbF" suffix) Bulletin I2199 rev. A 09/05 SAFEIR Series 25TTS12PbF VT < 1.25V @ 16A ITSM = 300A VRRM = 1200V 1www.irf.com

Bulletin I2199 rev. A 09/05 www.irf.com Part Number VRRM, maximum V DRM , maximum I RRM/IDRM peak reverse voltage peak direct voltage 125°C VV m A 25TTS12PbF 1200 1200 10 Voltage Ratings IT(AV) Max. Average On-state Current 16 A @ T C = 93° C, 180° conduction half sine wave IRMS Max. RMS On-state Current 25 ITSM Max. Peak One Cycle Non-Repetitive 300 10ms Sine pulse, rated VRRM applied Surge Current 350 10ms Sine pulse, no voltage reapplied I2t Max. I 2t for fusing 450 A 2s 10ms Sine pulse, rated V RRM applied 630 10ms Sine pulse, no voltage reapplied I2√t Max. I 2√t for fusing 6300 A 2√s t = 0.1 to 10ms, no voltage reapplied VTM Max. On-state Voltage Drop 1.25 V @ 16A, TJ = 25°C rt On-state slope resistance 12.0 m Ω TJ = 125°C VT(TO) Threshold Voltage 1.0 V IRM/IDM Max.Reverse and Direct 0.5 mA T J = 25 °C Leakage Current 10 T J = 125 °C IH Holding Current Typ. Max. Anode Supply = 6V, Resistive load, Initial IT=1A -- 100 mA IL Max. Latching Current 200 mA Anode Supply = 6V, Resistive load dv/dt Max. Rate of Rise of off-state Volt. 500 V/µs di/dt Max. Rate of Rise of turned-on Curr. 150 A/µs Absolute Maximum Ratings Parameters Values Units Conditions VR = rated VRRM/ VDRM

Bulletin I2199 rev. A 09/05 www.irf.com Triggering PGM Max. peak Gate Power 8.0 W PG(AV) Max. average Gate Power 2.0 + IGM Max. paek positive Gate Current 1.5 A - VGM Max. paek negative Gate Voltage 10 V IGT Max. required DC Gate Current 60 mA Anode supply = 6V, resistive load, T J = - 10°C to trigger 45 Anode supply = 6V, resistive load, T J = 25°C

20 Anode supply = 6V, resistive load, T J = 125°C

VGT Max. required DC Gate Voltage 2.5 V Anode supply = 6V, resistive load, T J = - 10°C to trigger 2.0 Anode supply = 6V, resistive load, T J = 25°C

1.0 Anode supply = 6V, resistive load, T J = 125°C

VGD Max. DC Gate Voltage not to trigger 0.25 T J = 125°C, VDRM = rated value IGD Max. DC Gate Current not to trigger 2.0 mA T J = 125°C, VDRM = rated value Parameters Values Units Conditions Switching Parameters Values Units Conditions tgt Typical turn-on time 0.9 µs T J = 25°C trr Typical reverse recovery time 4 T J = 125°C tq Typical turn-off time 110 TJ Max. Junction Temperature Range - 40 to 125 °C Tstg Max. Storage Temperature Range - 40 to 125 RthJC Max. Thermal Resistance Junction 1.1 °C/W DC operation to Case RthJA Max. Thermal Resistance Junction 62 to Ambient RthCS Typ. Thermal Resistance Case 0.5 Mounting surface, smooth and greased to Heatsink wt Approximate Weight 2 (0.07) g (oz.) T Mounting Torque Min. 6 (5) Max. 12 (10) Case Style TO-220 Marking Device 25TTS12 Thermal-Mechanical Specifications Parameters Values Units Conditions Kg-cm (Ibf-in)

Bulletin I2199 rev. A 09/05 www.irf.com Fig. 1 - Current Rating Characteristics Fig. 2 - Current Rating Characteristics Fig. 3 - On-state Power Loss Characteristics Fig. 4 - On-state Power Loss Characteristics Fig. 5 - Maximum Non-Repetitive Surge Current Fig. 6 - Maximum Non-Repetitive Surge Current 100 110 120 130 0 5 10 15 20 30° 60° 90° 120° 180° Maximum Allowable Cas e T emperature (°C) Conduction Angle Average On-s tate Current (A) 2 5 TTS. . Se r i e s R (DC) = 1.1 °C/WthJC 100 110 120 130 0 5 10 15 20 25 30 DC30° 60° 90° 120° 180° Average On-s tate Current (A) Maximum Allowable Cas e T emperature (°C) Conduction P eriod 25T T S .. S eries R (DC) = 1.1 °C/ WthJC 048 1 2 1 6 2 0 RM S Li m it Conduction Angle Maximum Average On-s tate Power L os s (W) Average On-s tate Current (A) 180° 120° 90° 60° 30° 25T T S .. S eries T = 125°CJ 0 5 10 15 20 25 30 DC 180° 120° 90° 60° 30° RM S Lim it Conduction P eriod Maximum Average On-s tate P ower L os s (W) Average On-s tate Current (A) 25TTS .. S eries T = 125°CJ 150 200 250 300 350 11 0 1 0 0 Number Of E qual Amplitude Half Cycle Current Puls es (N) Pe a k Ha lf Sine Wave On-s tate Current (A) Initia l T = 125°C @ 60 Hz 0.0083 s @ 50 Hz 0.0100 s J 25T TS. . Se r i e s At Any R ated Load Condition And With R ated V Appl ied F ol lowi ng S urge.RRM 100 150 200 250 300 350 400 0.01 0.1 1 Pe a k Ha lf Sine Wave On-s tate Current (A) Pulse Tra in Dura t io n ( s) Maximum Non R epetitive S urge Current Vers us P uls e T r ain Duration. Control Of Conduction May Not B e Maintained. Initia l T = 125°C No Voltage R eapplied R ated V R eappliedRRM J 25T T S .. S e ries

Bulletin I2199 rev. A 09/05 www.irf.com Fig. 7 - On-state Voltage Drop Characteristics Fig. 8 - Gate Characteristics Fig. 9 - Thermal Impedance ZthJC Characteristics 100 1000 012345 T = 25°CJ Ins tantaneous On-s tate Current (A) I ns tantaneous On-s tate Voltage (V) T = 125°CJ 25T T S .. S eries 0.1 100 0.001 0.01 0.1 1 10 100 (b) (a) R ectangular gate puls e (4) (3) (2) (1) Ins tantaneous Gate Current (A) I ns tantaneous Gate Voltage (V) TJ = 2 5 ° C TJ = 125 °C b)R ecommended load line for F requency Limited by PG(AV) a)R ecommended load line for r ated di/dt: 10 V, 2 0 ohms tr = 0.5 µs , tp >= 6 µs TJ = -1 0 ° C 2 5 TTS. . Se r i e sIGD VGD <= 30% rated d i/ dt: 10 V, 65 ohms tr = 1 µs , tp >= 6 µs (1) PGM = 40 W, tp = 1 ms (2) PGM = 20 W, tp = 2 ms (3) PGM = 8 W, tp = 5 ms (4) PGM = 4 W, tp = 10 ms 0.01 0.1 0.0001 0.001 0.01 0.1 1 10 Sq u a r e W a v e Pu l se D u r a t i o n ( s) S teady S tate Value (DC Operation) S ingle Pulse D = 0.50 D = 0.33 D = 0.25 D = 0.17 D = 0.08 25T T S .. S eries thJCTr a n si e n t Thermal Impedance Z (°C/W)

Bulletin I2199 rev. A 09/05 www.irf.com Part Marking Information Outline Table 3.78 (0.15) 3.54 (0.14) 10.54 (0.41) MAX. DIA. 15.24 (0.60) 14.84 (0.58) 2.92 (0.11) 2.54 (0.10) TERM 2 14.09 (0.55) 13.47 (0.53) 3.96 (0.16) 3.55 (0.14) 0.94 (0.04) 0.69 (0.03) 4.57 (0.18) 4.32 (0.17) 3 0.61 (0.02) MAX. 5.08 (0.20) REF. 1.32 (0.05) 1.22 (0.05) 6.48 (0.25) 6.23 (0.24) 0.10 (0.004) 1.40 (0.05) 1.15 (0.04) 2.89 (0.11) 2.64 (0.10) 2.04 (0.080) MAX. Conform to JEDEC outline TO-220AB Dimensions in millimeters and (inches) LOT CODE ASSEMBLY RECTIFIER INTERNATIONAL IRMX Assembly Line EXAMPLE: ASSEMBLED ON WW 19, 2001 LOT CODE 1789 LOGO P = LEAD-FREE PART NUMBER WEEK 19 YEAR 1 = 2001 DATE CODE THIS IS A 25TTS12

Bulletin I2199 rev. A 09/05 www.irf.com

25 T T S 12 PbF

Ordering Information Table 1 - Current Rating (25 = 25A) 2 - Circuit Configuration T = Single Thyristor T = TO-220AC 4 - Type of Silicon S = Standard Recovery Rectifier 5 - Voltage Rating (12 = 1200V) 6 - y none = Standard Production y PbF = Lead-Free IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105 TAC Fax: (310) 252-7309 Visit us at www.irf.com for sales contact information. 09/05 Data and specifications subject to change without notice. This product has been designed and qualified for Industrial Level and Lead-Free. Qualification Standards can be found on IR's Web site. (G) 3 (A) 1 (K)