25N40G-T47-T

25N40 UTC | Alldatasheet

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UNISONIC TECHNOLOGIES CO., LTD 25N40 Preliminary Power MOSFET www.unisonic.com.tw 1 of 6 Copyright © 2011 Unisonic Technologies Co., Ltd QW-R502-621.b 400V, 26A N-CHANNEL POWER MOSFET „ DESCRIPTION The UTC 25N40 is an N-channel mode power MOSFET using UTC’s advanced technology to provide customers with planar stripe and DMOS technology. This technology allows a minimum on-state resistance and superior switching performance. It also can withstand high energy pulse in the avalanche and commutation mode. The UTC 25N40 is generally applied in high efficiency switch mode power supplies. „ FEATURES * RDS(ON)=0.16Ω @ VGS=10V,ID=13A * Low Gate Charge (Typical 48nC) * Low C RSS (Typical 30pF) * High Switching Speed „ SYMBOL 1.Gate 2.Drain 3.Source „ ORDERING INFORMATION Ordering Number Pin Assignment Lead Free Halogen Free Package 1 2 3 Packing 25N40L-T47-T 25N40G-T47-T TO-247 G D S Tube Note: Pin Assignment: G: Gate D: Drain S: Source

25N40 Preliminary Power MOSFET UNISONIC TECHNOLOGIES CO., LTD 2 of 6 www.unisonic.com.tw QW-R502-621.b „ ABSOLUTE MAXIMUM RATINGS (TC=25°C, unless otherwise specified) (Note 5) PARAMETER SYMBOL RATINGS UNIT Drain to Source Voltage V DSS 400 V Gate-Source Voltage V GSS ±30 V TC=25°C 26 A Continuous TC=100°C ID 15.6 A Drain Current (Note 5) Pulsed (Note 2) I DM 104 A Avalanche Current (Note 2) I AR 26 A Single Pulsed (Note 3) E AS 1352 mJ Avalanche Energy Repetitive (Note 2) E AR 26.5 mJ Peak Diode Recovery dv/dt (Note 4) dv/dt 4.5 V/ns Power Dissipation (TC=25°C) 297 W Derate above 25°C PD 2.4 W/°C Junction Temperature T J +150 °C Storage Temperature T STG -55~+150 °C Notes: 1. Absolute maximum ratings are those values beyond which the device could be permanently damaged. Absolute maximum ratings are stress ratings only and functional device operation is not implied. 2. Repetitive Rating; Pulse width limited by maximum junction temperature. 3. L=4mH, I AS=26A. VDD=50V, RG=25Ω, Starting TJ=25°C 4. ISD≤26A, di/dt≤200A/µs, VDD≤BVDSS, Starting TJ=25°C 5. Drain current limited by maximum junction temperature „ THERMAL DATA PARAMETER SYMBOL RATINGS UNIT Junction to Ambient θJA 40 °C/W Junction to Case θJC 0.42 °C/W

25N40 Preliminary Power MOSFET UNISONIC TECHNOLOGIES CO., LTD 3 of 6 www.unisonic.com.tw QW-R502-621.b „ ELECTRICAL CHARACTERISTICS PARAMETER SYMBOL TEST CONDITIONS MIN TYP MAX UNIT OFF CHARACTERISTICS Drain-Source Breakdown Voltage BV DSS I D=250µA, VGS=0V, TJ=150°C 400 V Breakdown Voltage Temperature Coefficient ∆BVDSS/∆TJ Reference to 25°C, ID=250µA 0.5 V/°C Drain-Source Leakage Current I DSS V DS=400V, VGS=0V, 1 µA Forward V GS=+30V, VDS=0V +100 nAGate- Source Leakage Current Reverse IGSS VGS=-30V , VDS=0V -100 nA ON CHARACTERISTICS Gate Threshold Voltage V GS(TH) V GS=VDS, ID=250µA 2.0 4.0 V Static Drain-Source On-State Resistance R DS(ON) V GS=10V, ID=13A 0.11 0.16 Ω DYNAMIC PARAMETERS Input Capacitance C ISS 2400 3185 pF Output Capacitance C OSS 390 520 pF Reverse Transfer Capacitance C RSS VDS=25, VGS=0V, f=1.0MHz 30 45 pF SWITCHING PARAMETERS Total Gate Charge Q G 48 60 nC Gate to Source Charge Q GS 15 nC Gate to Drain ("Miller") Charge Q GD VDS=320V, VGS=10V, ID=26A (Note 1, 2) 20 nC Turn-ON Delay Time t D(ON) 45 100 ns Rise Time t R 100 210 ns Turn-OFF Delay Time t D(OFF) 115 240 ns Fall-Time t F VDD=200V, ID=26A, RG=25Ω (Note 1, 2) 66 140 ns SOURCE- DRAIN DIODE RATINGS AND CHARACTERISTICS Maximum Body-Diode Continuous Current I S 26 A Maximum Body-Diode Pulsed Current I SM 104 A Drain-Source Diode Forward Voltage V SD I SD=26A, VGS=0V 1.4 V Body Diode Reverse Recovery Time t rr 406 ns Body Diode Reverse Recovery Charge Q RR ISD=26A, VGS=0V, dIF/dt=100A/µs (Note 1) 5.17 µC Notes: 1. Pulse Test: Pulse width≤300µs; Duty Cycle≤2%. 2. Essentially Independent of Operating Temperature Typical Characteristics

25N40 Preliminary Power MOSFET UNISONIC TECHNOLOGIES CO., LTD 4 of 6 www.unisonic.com.tw QW-R502-621.b „ TEST CIRCUITS AND WAVEFORMS Same Type as D.U.T. L VDDDriver VGS RG VDS D.U.T. + * dv/dt controlled by RG * ISD controlled by pulse period * D.U.T.-Device Under Test Peak Diode Recovery dv/dt Test Circuit P. W. PeriodD=VGS (Driver) ISD (D.U.T.) IFM, Body Diode Forward Current di/dt IRM Body Diode Reverse Current Body Diode Recovery dv/dt Body Diode Forward Voltage Drop VDD 10V VDS (D.U.T.) VGS= P.W. Period Peak Diode Recovery dv/dt Waveforms

25N40 Preliminary Power MOSFET UNISONIC TECHNOLOGIES CO., LTD 5 of 6 www.unisonic.com.tw QW-R502-621.b „ TEST CIRCUITS AND WAVEFORMS (Cont.) VDS 90% 10% VGS tD(ON) tR tD(OFF) tF Switching Test Circuit Switching Waveforms 10V Charge QGS QGD QG VGS Gate Charge Test Circuit Gate Charge Waveform VDD tp Time BVDSS IAS ID(t) VDS(t) Unclamped Inductive Switching Test Circuit Unclamped Inductive Switching Waveforms

25N40 Preliminary Power MOSFET UNISONIC TECHNOLOGIES CO., LTD 6 of 6 www.unisonic.com.tw QW-R502-621.b UTC assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all UTC products described or contained herein. UTC products are not designed for use in life support appliances, devices or systems where malfunction of these products can be reasonably expected to result in personal injury. Reproduction in whole or in part is prohibited without the prior writ ten consent of the copyright owner. The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice.