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UNISONIC TECHNOLOGIES CO., LTD 25N20 Power MOSFET www.unisonic.com.tw 1 of 4 Copyright © 2015 Unisonic Technologies Co., Ltd QW-R502-A84.D 25A, 200V N-CHANNEL ENHANCEMENT MODE POWER MOSFET  DESCRIPTION The UTC 25N20 is an N-channel enhancement mode power MOSFET and it uses UTC’s perfect technology to provide designers with fast switching, ruggedized device design, low on-resistance and cost-effectiveness. It is generally suitable for all commercial-industrial applications and DC/DC converters requiring low voltage.  FEATURES * RDS(ON) < 160 mΩ @ VGS =10V, ID =16A * Single Drive Requirement * Low Gate Charge * RoHS Compliant  SYMBOL  ORDERING INFORMATION Ordering Number Pin Assignment Lead Free Halogen Free Package 1 2 3 Packing 25N20L-TF3-T 25N20G-TF3-T TO-220F G D S Tube 25N20L-TF1-T 25N20G-TF1-T TO-220F1 G D S Tube Note: Pin Assignment: G: Gate D: Drain S: Source  MARKING

UNISONIC TECHNOLOGIES CO., LTD 2 of 5 www.unisonic.com.tw QW-R502-A84.D  ABSOLUTE MAXIMUM RATINGS PARAMETER SYMBOL RATINGS UNIT Drain Source Voltage V DSS 200 V Gate Source Voltage V GSS ±20 V TC =25°C I D 25 A Continuous Drain Current (VGS=10V) TC = 100°C I D 15.86 A Pulsed Drain Current (Note 2) I DM 80 A Total Power Dissipation (TC =25°C) PD 50 W Operating Junction Temperature T J -55 ~ +150 °C Storage Temperature T STG -55 ~ +150 °C Notes: 1. Absolute maximum ratings are those values beyond which the device could be permanently damaged. Absolute maximum ratings are stress ratings only and functional device operation is not implied. 2. Pulse width limited by max. junction temperature.  THERMAL DATA PARAMETER SYMBOL RATINGS UNIT Junction to Ambient θJA 62.5 °C/W Junction to Case θJC 2.5 °C/W  ELECTRICAL CHARACTERISTICS (TJ=25°C, unless otherwise specified) PARAMETER SYMBOL TEST CONDITIONS MIN TYP MAX UNIT OFF CHARACTERISTICS Drain-Source Breakdown Voltage BV DSS V GS =0V, ID =250µA 200 V Breakdown Voltage Temperature Coefficient ∆BVDSS/∆TJ Reference to 25°C , ID =1mA 0.14 V/°C VDS =100V, VGS =0V, TJ=25°C 1 µADrain-Source Leakage Current I DSS VDS =80V, VGS =0V,TJ =150°C 100 µA Gate-Source Leakage Current I GSS V GS =±20V ±100 nA ON CHARACTERISTICS Gate Threshold Voltage V GS(TH) V DS =VGS, ID =250µA 2 4 V Static Drain-Source On-Resistance (Note) R DS(ON) V GS =10V, ID =16A 112 160 m Ω Forward Transconductance g FS V DS =10V, ID =16A 14 S DYNAMIC PARAMETERS Input Capacitance C ISS 1000 1700 pF Output Capacitance C OSS 240 pF Reverse Transfer Capacitance C RSS VDS =25V, VGS=0V, f=1.0MHz 25 pF SWITCHING PARAMETERS Turn-ON Delay Time1 t D(ON) 56 ns Turn-ON Rise Time t R 75 ns Turn-OFF Delay Time t D(OFF) 240 ns Turn-OFF Fall-Time t F VDD=30V, ID=0.5A, RG=25mΩ, VGS=10V, RD=3.125Ω 100 ns Total Gate Charge (Note) Q G 35 40 nC Gate Source Charge Q GS 8 nC Gate Drain Charge Q GD VGS=10V, VDS=50V, ID=1.3A 9.7 nC SOURCE- DRAIN DIODE RATINGS AND CHARACTERISTICS Drain-Source Diode Forward Voltage (Note) V SD I S =25A, VGS =0V 1.3 V Reverse Recovery Time t RR 90 ns Reverse Recovery Charge Q RR IS =25A,VGS =0V, dI/dt=100A/µs 380 nC Note: Pulse Test : Pulse width ≤ 300μs, Duty cycle ≤ 2%.

UNISONIC TECHNOLOGIES CO., LTD 3 of 5 www.unisonic.com.tw QW-R502-A84.D  TEST CIRCUITS AND WAVEFORMS Same Type as D.U.T. L VDDDriver VGS RG VDS D.U.T. + * dv/dt controlled by RG * ISD controlled by pulse period * D.U.T.-Device Under Test Peak Diode Recovery dv/dt Test Circuit P. W. PeriodD=VGS (Driver) ISD (D.U.T.) IFM, Body Diode Forward Current di/dt IRM Body Diode Reverse Current Body Diode Recovery dv/dt Body Diode Forward Voltage Drop VDD 10V VDS (D.U.T.) VGS= P.W. Period Peak Diode Recovery dv/dt Waveforms

UNISONIC TECHNOLOGIES CO., LTD 4 of 5 www.unisonic.com.tw QW-R502-A84.D  TEST CIRCUITS AND WAVEFORMS (Cont.) VGS D.U.T. RG 10V VDS RL VDD VDS 90% 10% VGS tD(ON) tR tD(OFF) tF Switching Test Circuit Switching Waveforms 10V Charge QGS QGD QG VGS Gate Charge Test Circuit Gate Charge Waveform VDD tp Time BVDSS IAS ID(t) VDS(t) Unclamped Inductive Switching Test Circuit Unclamped Inductive Switching Waveforms

UNISONIC TECHNOLOGIES CO., LTD 5 of 5 www.unisonic.com.tw QW-R502-A84.D  TYPICAL CHARACTERISTICS Drain Current vs. Drain-Source Breakdown Voltage Drain Current, ID (µA) Drain-Source Breakdown Voltage, BVDSS (V) Drain Current vs. Gate Threshold Voltage Drain Current, ID (µA) Gate Threshold Voltage, VTH (V) 413 100 150 200 250 300 0 160 200 24080 100 150 200 250 300 240 120 5 Drain Current, ID (A) Drain Current, ID (A) UTC assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all UTC products described or contained herein. UTC products are not designed for use in life support appliances, devices or systems where malfunction of these products can be reasonably expected to result in personal injury. Reproduction in whole or in part is prohibited without the prior writ ten consent of the copyright owner. The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice.