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UNISONIC TECHNOLOGIES CO., LTD 25N06 Preliminary Power MOSFET www.unisonic.com.tw 1 of 6 Copyright © 2010 Unisonic Technologies Co., Ltd QW-R502-450.a N-CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR „ DESCRIPTION The UTC 25N06 is an N-channel enhancement mode Power MOSFET, which provides low gate charge, avalanche rugged technology, and so on. The UTC 25N06 is universally applied in DC-DC & DC-AC converters, motor control, high current, high speed switching, solenoid and relay drivers, regulat ors, audio amplifiers, automotive environment. „ FEATURES * Low Gate Charge * RDS(on) = 0.048 Ω (TYP.) * Avalanche Rugged Technology * 100% Avalanche Tested * Repetitive Avalanche at 100°C * High Current Capability * Operating Temperature: 175°C * Application Oriented Characterization „ SYMBOL 1.Gate 2.Drain 3.Source „ ORDERING INFORMATION Ordering Number Pin Assignment Lead Free Halogen Free Package 1 2 3 Packing 25N06L-TA3-T 25N06G-TA3-T TO-220 G D S Tube Note: G: Gate, D: Drain, S: Source

25N06 Preliminary Power MOSFET UNISONIC TECHNOLOGIES CO., LTD 2 of 6 www.unisonic.com.tw Q W - R 5 0 2 - 4 5 0 . a „ ABSOLUTE MAXIMUM RATINGS PARAMETER SYMBOL RATINGS UNIT Drain-Source Voltage (VGS=0) V DS 60 V Drain-Gate Voltage (RGS=20kΩ) V DGR 60 V Gate-Source Voltage V GS ± 20 V TC=25°C 25 A Drain Current (Continuous) TC=100°C ID 17 A Drain Current (Pulsed) (Note 2) I DM 100 A Single Pulse Avalanche Energy (starting TJ =25°C, ID =25A, VDD =25 V) EAS 100 mJ Total Dissipation at TC=25°C P D 90 W Maximum Operating Junction Temperature T J 175 °C Storage Temperature T STG -65 ~ +175 °C Note: 1. Absolute maximum ratings are those values beyond which the device could be permanently damaged. Absolute maximum ratings are stress ratings only and functional device operation is not implied. 2. Pulse width limited by safe operating area „ THERMAL DATA PARAMETER SYMBOL RATINGS UNIT Junction to Ambient θJA 62.5 °C/W Junction to Case θJC 1.57 °C/W

25N06 Preliminary Power MOSFET UNISONIC TECHNOLOGIES CO., LTD 3 of 6 www.unisonic.com.tw VER.a „ ELECTRICAL CHARACTERISTICS (TC =25°C, unless otherwise specified) PARAMETER SYMBOL TEST CONDITIONS MIN TYP MAX UNIT OFF CHARACTERISTICS Drain-Source Breakdown Voltage BV DSS I D=250µA, VGS=0V 60 V VDS=Max Rating 1 Drain-Source Leakage Current (VGS=0) I DSS VDS= Max Rating×0.8, TC=125°C 10 µA Gate- Source Leakage Current (VDS=0) I GSS V GS=±20V ±100 nA ON CHARACTERISTICS Gate Threshold Voltage V GS(TH) VDS=VGS, ID=250µA 2 2.9 4 V Static Drain-Source On-State Resistance R DS(ON) V GS=10V, ID=12.5A 0.048 0.065 Ω On State Drain Current I D(on) V DS>ID(on) ×RDS(on)max, VGS=10V 25 A Forward Transconductance (Note 1) g FS V DS>ID(on) ×RDS(on)max, ID=12.5A 7 11 S DYNAMIC PARAMETERS Input Capacitance C ISS 700 900 pF Output Capacitance C OSS 320 450 pF Reverse Transfer Capacitance C RSS VGS=0V, VDS=25V, f=1MHz 90 150 pF SWITCHING PARAMETERS Total Gate Charge Q G 26 40 nC Gate to Source Charge Q GS 8 nC Gate to Drain Charge Q GD VDD=40V, VGS=10V, ID=25A 9 nC Turn-ON Delay Time t D(ON) 30 45 ns Rise Time t R VDD=30V, ID=3A, RG=50Ω, VGS=10V 90 130 ns Turn-OFF Delay Time t D(OFF) 80 120 ns Fall-Time t F 80 120 ns Cross-Over Time t C VDD=40V, ID=25A, RG=50Ω, VGS=10V 170 250 ns Turn-on Current Slope (di/dt) on VDD=40V, ID=25A, RG=50Ω, VGS=10V

230 A/µs

SOURCE- DRAIN DIODE RATINGS AND CHARACTERISTICS Drain-Source Diode Forward Voltage (Note 1) VSD I SD=25A, VGS=0V 1.5 V Reverse Recovery Time t RR 80 ns Reverse Recovery Charge Q RR 0.22 µC Reverse Recovery Current I RRM ISD=25A, di/dt=100A/µs, VDD=30V, TJ=150°C 5.5 A Source-Drain Current I SD 25 A Source-Drain Current (Pulsed) (Note 2) I SDM 100 A Note: 1. Pulsed: Pulse duration = 300µs, duty cycle 1.5%. 2. Pulse width limited by safe operating area

25N06 Preliminary Power MOSFET UNISONIC TECHNOLOGIES CO., LTD 4 of 6 www.unisonic.com.tw VER.a „ SWITCHING TIME TEST CIRCUIT VDD V(BR)DSS VD IDM ID VDD Fig. 2 Unclamped Inductive Waveforms Fig. 3. Switching Times Test Circuits For Resistive Load D.U.T. VD RL 2200µF 3.3µF VDD RG VGS PW

25N06 Preliminary Power MOSFET UNISONIC TECHNOLOGIES CO., LTD 5 of 6 www.unisonic.com.tw VER.a „ SWITCHING TIME TEST CIRCUIT (Cont.) 12V D.U.T. PW 1kΩ 2200µF 2.7kΩ 47kΩ 100Ω 47kΩ 100nF IG=CONST VI=20V=VGMAX VG 1kΩ VDD Fig. 4 Gate Charge Test Circuit Fig. 5 Test Circuit For Inductive Load Switching And Diode Reverse Recovery Time 3.3µF 1000µF VDD L=100µH D.U.T. RG + - G S D 85Ω B B AA B A D G S25Ω MOS DIODE FAST DIODE

25N06 Preliminary Power MOSFET UNISONIC TECHNOLOGIES CO., LTD 6 of 6 www.unisonic.com.tw VER.a UTC assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all UTC products described or contained herein. UTC products are not designed for use in life support appliances, devices or systems where malfunction of these products can be reasonably expected to result in personal injury. Reproduction in whole or in part is prohibited without the prior writ ten consent of the copyright owner. The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice.