25N06 UMW | Alldatasheet

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VDS =60V,ID =25A RDS(ON),23mΩ(Typ)@VGS =10V RDS(ON),30mΩ(Typ)@VGS =4.5V Fast Switching Low ON Resistance(Rdson≤29mΩ) Low Gate Charge Low Reverse transfer capacitances 100% Single Pulse avalanche energy Test Application Power switch circuit of adaptor and charger; LED backlight driver; Synchronousrectification PackageMarkingandOrderingInformation DeviceMarking Device DevicePackage ReelSize Tapewidth Quantity UMW 25N06 TO-252 330mm 12mm 2500 AbsoluteMaximum Ratings(TA=25℃ unlessotherwise noted) Parameter Symbol Value Unit Drain-SourceVoltage VDS 60 V Gate-SourceVoltage VGS ±20 V ContinuousDrainCurrent TC=25℃ ID 25 A TC=100℃ 17.5 A PulsedDrainCurrent1) IDM 100 A SinglePuiseAvalancheEnergy2) EAS 56.2 mJ MaximumPowerDissipation TC=25℃ PD 36.2 W StorageTemperatureRange TSTG -55to+150 ℃ OperatingJunctionTemperatureRange TJ -55to+150 ℃ ThermalResistance Parameter Symbol Min. Typ. Max Unit ThermalResistance,Junction-to-Case RθJC - - 3.45 ℃/W ThermalResistance,Junction toAmbient RθJA - - 111.5 ℃/W UMW UMW 25N06 R UMW 25N06 w ww.umw-ic.com 1 友台半导体有限公司

ElectricalCharacteristics(TJ=25℃ unless otherwise noted) OFF CHARACTERISTICS Parameter Symbol Conditions Min. Typ. Max. Unit Drain-SourceBreakdown Voltage BVDSS VGS=0V,IDS=250uA 60 - - V Zero GateVoltage DrainCurrent IDSS VDS=60V,VGS=0V - - 1 uA Gate-BodyLeakage IGSS VGS=±20V,VDS=0V - - ±100 nA ON CHARACTERISTICS Parameter Symbol Conditions Min. Typ. Max. Unit GateThreshold Voltage VGS(TH) VDS=VGS,IDS=250uA 1 1.5 2 V Drain-SourceOn-State Resistance RDS(ON) VGS=10V,IDS=19A - 23 29 mΩ VGS=4.5V,IDS=19A - 30 38 mΩ DYNAMIC CHARACTERISTICS Parameter Symbol Conditions Min. Typ. Max. Unit InputCapacitance CiSS VDS=30V,VGS=0V, f=1MHz - 939 - pFOutputCapacitance COSS - 73.5 - ReverseTransfer Capacitance Crss - 52.7 - GateResisitance Rg VDD=0V,VGS=0V, F=1MHz - 1.9 - Ω SWITCHING CHARACTERISTICS Parameter Symbol Conditions Min. Typ. Max. Unit Turn-OnDelayTime Td(on) VGS=10V,VDs=30V, RGEN=3Ω ID=20A - 8.4 - ns RiseTime tr - 8.5 - Turn-OffDelayTime Td(off) - 35.4 - FallTime tf - 4.8 - TotalGate Charge Qg VDS=30V,IDS=20A, VGS=10V - 21.2 - nCGateto SourceGate Charge Qgs - 3.6 - Gateto Drain“Miller”Charge Qgd - 5.5 - DRAIN-SOURCEDIODE CHARACTERISTICSAND MAXIMUM RATINGS Parameter Symbol Conditions Min. Typ. Max. Unit Drain-SourceDiode ForwardVoltage VSD VGS=0V,IDS=20A - - 1.2 V Reverse RecoveryTime trr TJ=25℃,IF=20A di/dt=100A/us - 18.8 - nS Reverse RecoveryCharge Qrr - 13.4 - nC Notes: 1)Repetitiverating;pulse width limited bymaximum junction temperature . 2)L=0.5mH,VDD=30V,Ias=15AStartTJ=25℃ 3)Recommend solderingtemperature defined byIPC/JEDEC J-STD 020 60V N-Channel Power Mosfet UMW UMW 25N06 R w ww.umw-ic.com 2 友台半导体有限公司

60V N-Channel Power Mosfet UMW UMW 25N06 R w ww.umw-ic.com 3 友台半导体有限公司

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60V N-Channel Power Mosfet UMW UMW 25N06 R www.umw-ic.com 6 友台半导体有限公司

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