25MT060WF IRF | Alldatasheet

Document overview

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Technical content

Features

  • Optimized for Welding, UPS and SMPS Applications
  • Operating Frequencies > 20 kHz Hard Switching, >200 kHz Resonant Mode
  • Low EMI, requires Less Snubbing
  • Direct Mounting to Heatsink
  • PCB Solderable Terminals
  • Very Low Junction-to-Case Thermal Resistance Benefits

V(BR)CES Collector-to-Emitter Breakdown Voltage 600 V V GE = 0V, I C = 250µA VCE(on) Collector-to-Emitter Voltage 1.85 V GE = 15V, I C = 25A

1.7 V GE = 15V, I C = 25A, T J = 150°C

VGE(th) Gate Threshold Voltage 3 6 I C = 250µA ∆ VGE(th) / Temperature Coeff. of - mV/°C V GE = V CE, I C = 500µA ∆ TJ Threshold Voltage gfe Forward Transconductance 40 S V CE = 100V, I C = 25A ICES Collector-to-Emiter Leaking Current 250 µA V GE = 0V, V CE = 600V

5000 V GE = 0V, V CE = 600V, T J = 150°C

VFM Diode Forward Voltage Drop 1.3 V I F = 25A, V GE = 0V

1.2 I F = 25A, V GE = 0V, T J = 150°C

IGES Gate-to-Emitter Leakage Current ± 100 nA V GE = ± 20V Electrical Characteristics @ TJ = 25°C (unless otherwise specified) Parameters Min Typ Max Units Test Conditions Thermal- Mechanical Specifications TJ Operating Junction Temperature Range - 40 150 °C TSTG Storage Temperature Range - 40 125 RthJC Junction-to-Case IGBT 0.7 °C/ W Diode 0.9 RthCS Case-to-Sink Module 0.06 (Heatsink Compound Thermal Conductivity = 1 W/mK) Weight 66 g Parameters Min Typ Max Units Qg Total Gate Charge (turn-on) 180 nC I C = 25A Qge Gate-Emitter Charge (turn-on) 25 V CC = 400V Qgc Gate-Collector Charge (turn-on) 63 V GE = 15V Eon Turn-On Switching Loss 950 µ J R g1 = Rg2 = 5Ω , IC = 25A Eoff(1) Turn-Off Switching Loss 320 V CC = 480V Ets(1) Total Switching Loss 1270 V GE = ±15V Cies Input Capacitance 4000 pF V GE = 0V Coes Output Capacitance 260 V CC = 30V Cres Reverse Transfer Capacitance 68 f = 1.0 MHz trr Diode Reverse Recovery Time 50 ns V R = 200V, IC = 25A Irr Diode Peak Reverse Current 4.5 A di/dt = 200A/µs Qrr Diode Recovery Charge 112 nC di(rec)M/dt Diode PeakRate of Fall of Recovery 250 A/µs During tb Switching Characteristics @ TJ = 25°C (unless otherwise specified) Parameters Min Typ Max Units Test Conditions

IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105 TAC Fax: (310) 252-7309 Visit us at www.irf.com for sales contact information. 05/01 Outline Table Data and specifications subject to change without notice. This product has been designed for Industrial Level. Qualification Standards can be found on IR's Web site. Dimensions in millimeters