25MB NAINA | Alldatasheet
Document overview
- Manufacturer or author: Provided By ALLDATASHEET.COM(FREE DATASHEET DOWNLOAD SITE)
- PDF pages: 2
Technical content
Features
- Glass passivated chip junction
- Surge capability of 300 A
- High efficiency Electrically isolated metal case for maximum heat dissipation
- Mounting: thru hole for # 8 screw Thermal and Mechanical Specifications (T A noted) Parameters Symbol Maximum operating junction temperature range Maximum storage temperature range T Approximate weight Voltage Ratings (T A = 25 0C unless otherwise noted) Parameter Symbol Maximum repetitive peak reverse voltage V Maximum RMS voltage V Maximum DC blocking voltage V Maximum average forward output current IF(AV) Peak forward surge current (10ms) single half sine-wave superimposed on rated load IFSM Maximum DC forward voltage drop per element @ 7.5 A Maximum DC reverse current at rated DC blocking voltage per element TA = 25 0C TA = 125 0C emiconductor Ltd. Sector 63, Noida – 201301, India • Tel: 0120- 4205450 • Fax: 0120 sales@nainasemi.com • www.nainasemi.com Single Phase Bridge Rectifier Electrically isolated metal case for maximum heat dissipation GBPC A = 25 0C unless otherwise Symbol Values Units TJ - 55 to + 125 TStg - 55 to + 150 30 g C unless otherwise noted) Symbol 25MB VRRM 50 100 200 400 600 800 VRMS 35 70 140 280 420 560 VDC 50 100 200 400 600 800 F(AV) 25.0 FSM 300 VF 1.2 IR 5.0 500 25MB 4205450 • Fax: 0120 -4273653 GBPC Units 800 1000 V 560 700 V 800 1000 V A A V µA
2 D-95, Sector 63, Noida
sales@nainasemi.com emiconductor Ltd. Sector 63, Noida – 201301, India • Tel: 0120- 4205450 • Fax: 0120 sales@nainasemi.com • www.nainasemi.com ALL DIMENSIONS ARE IN MM 25MB 4205450 • Fax: 0120 -4273653