25ACI12T4V2

25ACI12T4V2 SEMIKRON | Alldatasheet

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Absolute Maximum Ratings (T s=25° C, unless otherwise specified) Symbol Parameter Conditions Values Units IGBT - Inverter VCES 1200 V IC Tj = 175 ° C TS = 25 ° C 61 A TS = 70 ° C 50 A ICnom 50 A ICRM ICRM = 3xI Cnom 150 A tpsc VCC = 600V Tj=150° C ≤10 µs MiniSKiiP ® AC IPM Tj(max) Junction temperature -40 ... +175 ° C Diode IF Tj=175° C Ts= 25 ° C 57 A Ts= 70 ° C 45 A IFnom 50 A IFRM IFRM = 3xI Cnom Tj < T j(max) 150 A SKiiP 25ACI12T4V2 IFSM tp = 10 ms, sin 180° , T j = 150 ° C 265 A Tj(max) Junction temperature -40 … +175 ° C Driver Data sheet status: preliminary VCC Applied between VCC-VSS, VCCL-VSSL 17 V VBx Applied between VB1-U, VB2-V, VB3-W 17 V VSx Voltage to VSS, t p<500ns -3 … 1200 V Features Vin Applied between HIN1, LIN1, HIN2, LIN2, HIN3, LIN3 - VSS VSS-0.3 … VCC+0.3 VoErr Applied between /ERROUT-VSS VSS-0.3 … VCC+0.3 V Imax(EO) Between /ERROUT-VSS 10 mA VITRIP Applied between ITRIP-VSS VSS-0.3 … VCC+0.3 V fmax 20 kHz Temperature Tc -40 … +125 ° C Tstg -40 … +125 ° C System Visol AC, rms, f=60Hz, t=1min, all pins to heat sink 2500 V ItRMS Per power terminal (20A / Spring) 20 A Electrical Characteristics (T s=25° C, unless otherwise specified) Limits Symbol Parameter Conditions min. typ. max. Units IGBT VCEsat IC = 50 A Tj = 25 ° C 1.85 2.05 V VGE = 15 V Tj = 150 ° C 2.25 2.45 V VCEO Tj = 25 ° C 0.8 0.9 V Tj = 150 ° C 0.7 0.8 V rCE VGE = 15 V Tj = 25 ° C 21 23 m Ω Typical Applications Tj = 150 ° C 31 33 m Ω ICES VGE = 0 V Tj = 25 ° C 0.3 mA VCE = 600 V Eon VCC = 600V Tj = 150 ° C 7.2 mJ Eoff Ic = 50 A Tj = 150 ° C 5.6 mJ Remarks td(on) R gon /R goff = 4.7 Ω Tj = 150 ° C 1065 ns tr di/dt on = 1061 A/µs Tj = 150 ° C 50 ns td(off) di/dt off = 693 A/µs Tj = 150 ° C 1670 ns tr Tj = 150 ° C 252 ns R th(j-s) per IGBT 0.84 K/W Diode VF = V EC IF = 50 A Tj = 25 ° C 2.25 2.55 V VGE = 0 V (Chiplevel) Tj = 150 ° C 2.2 2.5 V VF0 Tj = 25 ° C 1.3 1.5 V Tj = 150 ° C 0.9 1.1 V rF Tj = 25 ° C 19 21 m Ω Tj = 150 ° C 26 28 m Ω Err IF = 50 A Tj = 150 ° C 3 mJ Q rr di F/dt = -1479 A/µs Tj = 150 ° C 8.3 µC IRRM Vcc = 600 V, V GE = 0 V Tj = 150 ° C 56 A R th(j-s) per Diode 0,99 K/W ACI Page 1 / 6 09.08.2010 © by SEMIKRON Three-phase inverter intelligent power module

• One screw assembly of driver, module and heat sink
• Solder-free assembly of power, control and auxiliary contacts
• Trench-Field-Stop IGBT
• Robust and soft freewheeling diodes in CAL technology
• Latch-up free SOI driver IC
• Advanced level shifter technology
• Bootstrap power supply technology
• Matched propagation delay for all channels
• Overcurrent shut-down via current sensing
• Interlock logic for shoot-through prevention
• Common shut-down signal
• Undervoltage lockout for all channels with hysteresis band
• Integrated temperature sensor (NTC)
• RoHS compliant
• Industrial- & consumer drives
• Power supplies (SMPS & UPS)
• Industrial air conditioner

Electrical Characteristics (T s=25° C, unless otherwise specified) Limits Symbol Parameter Conditions min. typ. max. Units Driver VDC Applied between VCC-VSS, VCCL-VSSL 15 V ICC VCC=15V, all logic inputs = open, VCC-VSS 5.0 mA VBx Applied between VB1-U, VB2-V, VB3-W 15 V IBx VBx = 15 V, V iH = V iL = 0 V 60 µA ViT+ Applied between HIN1, HIN2, HIN3, LIN1, LIN2, LIN3, LIN4, /ERRIN-VSS 1.9 2.4 V MiniSKiiP ® AC IPM ViT- Applied between HIN1, HIN2, HIN3, LIN1, LIN2, LIN3, LIN4, /ERRIN-VSS 0.8 1.1 V VoErr Error Output Voltage Applied between /ERROUT-VSS 15 V VUV 10,5 V VUVr 12,3 V td,ITRIP Itrip to output propagation delay 500 ns tSIS Short pulse suppression for signals inputs 460 ns SKiiP 25ACI12T4V2 tTD Interlock Dead time 460 ns fsw 15 25 kHz Temperature Sensor Data sheet status: preliminary R 100 TSensor = 100 ° C (R 25 = 5 k Ω) 339 Ω B100/125 R (T) = R 100 exp[B 100/125 (1/T-1/373)]; [T] = K 4096 K Module Features m 65 g M S 2 2.5 Nm Typical Applications Remarks ACI Page 2 / 6 09.08.2010 © by SEMIKRON Three-phase inverter intelligent power module

• One screw assembly of driver, module and heat sink
• Solder-free assembly of power, control and auxiliary contacts
• Trench-Field-Stop IGBT
• Robust and soft freewheeling diodes in CAL technology
• Latch-up free SOI driver IC
• Advanced level shifter technology
• Bootstrap power supply technology
• Matched propagation delay for all channels
• Overcurrent shut-down via current sensing
• Interlock logic for shoot-through prevention
• Common shut-down signal
• Undervoltage lockout for all channels with hysteresis band
• Integrated temperature sensor (NTC)
• RoHS compliant
• Industrial- & consumer drives
• Power supplies (SMPS & UPS)
• Industrial air conditioner

Fig. 3: Typ. transfer characteristic Fig. 4: Turn-on/-off energy = f(IC) Page 3 / 6 © by SEMIKRON 09.08.2010 100 0 1 2 3 4 5 V IC Tj = 25 ° C VGE = 15 V Tj = 150 ° C VGE = 15 V A VCE 0 50 100 150 200 ° C A Tj = 175 ° C VGE ≥ 15 V TS IC 100 0 5 10 15 V A Tj = 150 ° C Tj = 25 ° C tp = 80 µs VCE = 20 V IC VGE 0 20 40 60 80 100 A mJ Eon Eoff Err Tj = 150 ° C VCC = 600 V VGE = + 15 V R G = 4,7 Ω IC E 0,001 0,01 0,1 0,00001 0,0001 0,001 0,01 0,1 1 10 single pulse K/W s Zth(j-c) tP diode IGBT 100 1000 10000 0 20 40 60 80 100 A ns td off td tr tf Tj = 150 ° C VCC = 600 V VGE = + 15 V R G = 4,7 Ωt IC

Fig. 7: Typ. freewheeling diode forward characteristic Page 4 / 6 © by SEMIKRON 09.08.2010 100 150 0 1 2 3 4VF Tj = 150 ° C A V IF Tj = 25 ° C

E1 Auxiliary emitter terminal for U phase high side IGBT E3 Auxiliary emitter terminal for V phase high side IGBT E5 Auxiliary emitter terminal for W phase high side IGBT E2 Auxiliary emitter terminal for U phase low side IGBT E4 Auxiliary emitter terminal for V phase low side IGBT E6 Auxiliary emitter terminal for W phase low side IGBT Fig. 4: PIN Description Fig. 5: Internal Circuit and Typ. Application Page 5 / 6 © by SEMIKRON 09.08.2010 NV NW Negative DC-Link power terminal for W phase Negative DC-Link power terminal for V phase Temperature sensor terminal (-) P U V W NU /ERROUT Driver IC supply voltage ground External error / shut-down logic input (inverted) LIN1 HIN2 VCC HIN3 PWM signal input for W phase high side switch Driver IC main supply voltage PWM signal input for V phase high side switch PWM signal input for W phase low side switch Error logic output (inverted) Comparator input / current sense input for overcurrent shut-down Floating supply for W phase high side IGBT Floating supply for V phase high side IGBT Low side supply voltage Low side supply voltage ground PWM signal input for V phase low side switch PWM signal input for U phase low side switch Floating supply for U phase high side IGBT Signal Name Description HIN1 PWM signal input for U phase high side switch VB1 ITRIP /ERRIN VSS U phase power output LIN3 VB2 VCCL VSSL LIN2 VB3 V phase power output W phase power output Negative DC-Link power terminal for U phase Temperature sensor terminal (+) Positive DC-Link power terminal

Fig. 6: Package Outline, Pinout The specifications of our components may not be considered as an assurance of component characteristics. Components have to be tested for the respective application. Adjustments may be necessary. The use of SEMIKRON products in life support appliances and systems is subject to prior specification and written approval by SEMIKRON. We therefore strongly recommend prior consultation of our personal. Page 6 / 6 © by SEMIKRON 09.08.2010