2SC3588-Z NEC | Alldatasheet
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NPN SILICON TRIPLE DIFFUSED TRANSISTOR MP-3
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2SC3588-Z is designed for High Voltage Switching, especially in PACKAG 3 DIMENS 1ONS Hybrid Integrated Circuits. 6,540.2 a 2340.2 FEATURES 5.020.2 [ia 0520.1 © High Voltage Vceo = 400 V bal e@ © Complement to 2SA1400-Z xf : Ls a 2, +4 8) 9) lo QUALITY GRADE aa El 3] 151 | ja LPT. at =| Standard std Hv2) 4 0.8 Please refer to “Quality grade on NEC Semiconductor Devices” 1120.2 il be ww S| (Document number IEI-1209) published by NEC Corporation to 2323 know the specification of quality grade on the devices and its recommended applications. eal 1. Base e@ 2. Collector ABSOLUTE MAXIMUM RATINGS (Ta = 25 °C) 3 Eitan Collector to Base Voltage Vcso 500 Vv Collector to Emitter Voltage Vceo 400 Vv Emitter to Base Voltage VeBo 7 v Collector Current (DC) Ic 0.5 A Collector Current (Pulse)* Ic 1.0 A Total Power Dissipation (Ta = 25 °C)** = Pr 2.0 Ww e@ Junction Temperature Ti 150 °c Storage Temperature Tstg -55to +150 °C * PWS 10 ms, Duty Cycle $50 % ** When mounted on ceramic substrate of 7.5 cm? x 0.7 mm Document No. TC-16634 (0.0. No. TC-5815) Pintedin Japon on 100M © NEL Corporation 1965
ELECTRICAL CHARACTERISTICS (Ta = 25 °C) CHARACTERISTIC symeot | min. | tye. | max. | UNIT TEST CONDITIONS e Collector Saturation Voltage | Veewwe | | oz | o8 | v | Ic = 300 mA, Is = 60 mA ~ Vcc = 150 V, PW = 50 us * Pulsed: PW § 350 ys, Duty Cycle $2 % hre Classification marking [om [ot Tk | @ [pres [200 40 | 30%0.60 TYPICAL CHARACTERISTICS (Te = 25 °C) TOTAL POWER DISSIPATION vs. FORWARD BIAS. AMBIENT TEMPERATURE SAFE OPERATING AREA. A [coun MAX—| a 4 5 Sere ci Oy iii oo 6 Ny: 5 ESEr attr o% NSRIB Ne 6 | | LR I | | § os HL ron N FA 4 4, 8 FEE NS 4 2 « ° a a NSE g With $0.01 EIT A ST eo of $2 8MIe sup 6 001 SSS OS) Ta 1 2 om? x Strate ~ es oe os se ce ee oe a ee A eo] [Ree = 5c Heil Te 0.001 [2. Sinale puisel TT TTT TCH r ) 0 50 100 150 1 10 100 1000 Ta - Ambient Temperature - °C Vce - Collector to Emitter Voltage - V DERATING CURVE OF SAFE OPERATING AREA = TRANSIENT THERMAL RESISTANCE 100 100 =e ze o FS Vice = 40 V z 2 cen Bilcsii sien g 5
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Reference : [__rooteaionsierane te] e Quality control of NEC semiconductors devices. TEI-1202 Quality control guide of semiconductors devices. | me1202 | Assembly manual of semiconductors devices. 1E1-1207 Design of Push-Pull Type Switching Regulators (Basic) TEB-1002 Design of Push-Pull Type Switching Regulators (Applications) TEB-1003 Optimum Base Drive Conditions of Switching Power Transistors TEB-1014 No part of this document may be copied or reproduced in any form or by any means without the prior written e@ consent of NEC Corporation.NEC Corporation assumes no responsibility for any errors which may appear in this | document. NEC Corporation does not assume any liability for infringement of patents, copyrights or other intellectual property rights of third parties by or arising from use of a device described herein or any other liability arising from use of such device. No license, either express, implied or otherwise, is granted under any patents, copyrights or other intellectual property rights of NEC Corporation or others. The devices listed in this document are not suitable for use in aerospace equipment, submarine cables, nuclear reactor control systems and life support systems. If customers intend to use NEC devices for above applications or they intend to use "Standard" quality grade NEC devices for applications not intended by NEC, please contact r ) our sales people in advance. Application examples recommended by NEC Corporation. Standard: Computer, Office equipment, Communication equipment, Test and Measurement equipment, Machine tools, Industrial robots, Audio and Visual equipment, Other consumer products, etc. Special: Automotive and Transportation equipment, Traffic control systems, Antidisaster systems, Anticrime systems, etc. M4 92.6 seer