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Technical content
www.johanson dielectrics.com tanceram cHIP caPacItors TANCERAM® chip capacitors can replace tantalum capacitors in many applications and offer several key advantages over traditional tantalums. Because TANCERAM® capacitors exhibit extremely low ESR, equivalent circuit performance can often be achieved using considerably lower capacitance values. Low DC leakage reduces current drain, extending the battery life of portable products. TANCERAM ® high DC breakdown voltage ratings offer improved reliability and eliminate large voltage de-rating common when designing with tantalums. adVantageS
- Low ESR • Low DC Leakage
- Higher Surge Voltage • Non-polarized Devices
- Reduced CHIP Size • Improved Reliability
- Higher Insulation Resistance • Higher Ripple Current
applicationS
- Switching Power Supply Smoothing (Input/Output) • Backlighting Inverters
- DC/DC Converter Smoothing (Input/Output) • General Digital Circuits How to order tanceram® Part number written: 100R15X106MV4E
100 R15 X 106 M V 4 E
VOLTAGE SIZE DIELECTRIC CAPACITANCE TOLERANCE TERMINATION MARKING PACKING 6R3 = 6.3 V 100 = 10 V 160 = 16 V 250 = 25 V 500 = 50 V 101 = 100 V See Chart W = X7R X = X5R 1st two digits are significant; third digit denotes number of zeros. 105 = 1.00 µF 476 = 47.0 µF 107 = 100 µF K = ±10% M = ±20% V = Nickel Barrier with 100% Tin Plating (Matte) T = SnPb* (*available on select parts) 4 = Unmarked Code Type Reel E Plastic 7” T Paper 7” Tape specifications conform to EIA RS481
www.johanson dielectrics.com caSe Size capacitance Selection EIA / JDI INCHES (mm) VDC 1.0 µF 2.2 µF 3.3 µF 4.7 µF 10 µF 22 µF 47 µF 100 µF 0402 R07 L W T EB .040 ±.004 .020 ±.004 .025 Max. .008 ±.004 (1.02 ±.10) (0.51 ±.10) (0.64) (0.20±.10) 6.3 0603 R14 L W T EB .063 ±.008 .032 ±.008 .035 Max. .010±.005 (1.60 ±.20) (0.81 ±.20) (0.89) (.25±.13) 6.3 0805 R15 L W T EB .080 ±.010 .050 ±.010 .060 Max. .020±.010 (2.03 ±.25) (1.27 ±.25) (1.52) (0.51±.25 ) 6.3 1206 R18 L W T EB .125 ±.013 .062 ±.010 .070 Max. .020 +.015-0.01 (3.17 ±.35) (1.57 ±.25) (1.78) (0.51+.38-.25) 100 6.3 1210 S41 L W T EB .126 ±.016 .098 ±.012 .110 Ma x. .020 +.015-.010 (3.20 ±.40) (2.50 ±.30) (2.8) (0.51+.38-.25) 100 6.3 1812 S43 L W T EB .177 ±.016 .126 ±.015 .140 Ma x. .035 ±.020 (4.50 ±.40) (3.20 ±.38) (3.55) (0.89 ±0.51) 100 6.3 W X W X W X W X W X W X W X W X
electrical cHaracteriSticS
DIELECTRIC: X7R X5R TEMPERATuRE COEFFICIENT: ±15% (-55 to +125°C) ±15% (-55 to +85°C) DISSIPATION FACTOR: For ≥ 50 VDC: 5% max. For ≤ 35 VDC: 10% max. For ≥ 50 VDC: 5% max. For ≤ 35 VDC: 10% max. INSuLATION RESISTANCE (MIN. @ 25°C, WVDC) 100 ΩF or 10 GΩ, whichever is less DIELECTRIC STRENGTH: 2.5 X WVDC, 25°C, 50mA max. TEST CONDITIONS: Capacitance values ≤ 10 µF: 1.0kHz±50Hz @ 1.0±0.2 Vrms Capacitance values > 10 µF: 120Hz±10Hz @ 0.5V±0.1 Vrms OTHER: See page 35 for additional dielectric specifications. tanceram cHIP caPacItors LW T E/B DIELECTRIC W (X7R) X (X5R)