2508DF

BU2508DF PHILIPS | Alldatasheet

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Philips Semiconductors Product specification Silicon Diffused Power Transistor BU2508DF GENERAL DESCRIPTION Enhanced performance, new generation, high-voltage, high-speed switching npn transistor with an integrated damper diode in a plastic full-pack envelope intended for use in horizontal deflection circuits of colour television receivers. Features exceptional tolerance to base drive and collector current load variations resulting in a very low worst case dissipation. QUICK REFERENCE DATA SYMBOL PARAMETER CONDITIONS TYP. MAX. UNIT VCESM Collector-emitter voltage peak value VBE = 0 V - 1500 V VCEO Collector-emitter voltage (open base) - 700 V IC Collector current (DC) - 8 A ICM Collector current peak value - 15 A Ptot Total power dissipation T hs ≤ 25 ˚C - 45 W VCEsat Collector-emitter saturation voltage IC = 4.5 A; IB = 1.12 A - 1.0 V ICsat Collector saturation current 4.5 - A VF Diode forward voltage I F = 4.5 A 1.6 2.0 V tf Fall time I Csat = 4.5 A; IB(end) = 1.1 A 0.4 0.6 µs PINNING - SOT199 PIN CONFIGURATION SYMBOL PIN DESCRIPTION 1 base 2 collector 3 emitter case isolated LIMITING VALUES Limiting values in accordance with the Absolute Maximum Rating System (IEC 134) SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT VCESM Collector-emitter voltage peak value VBE = 0 V - 1500 V VCEO Collector-emitter voltage (open base) - 700 V IC Collector current (DC) - 8 A ICM Collector current peak value - 15 A IB Base current (DC) - 4 A IBM Base current peak value - 6 A -IB(AV) Reverse base current average over any 20 ms period - 100 mA -IBM Reverse base current peak value 1 -5 A Ptot Total power dissipation T hs ≤ 25 ˚C - 45 W Tstg Storage temperature -65 150 ˚C Tj Junction temperature - 150 ˚C 12 3 case b c e Rbe 1 Turn-off current. July 1998 1 Rev 1.600

Philips Semiconductors Product specification Silicon Diffused Power Transistor BU2508DF THERMAL RESISTANCES SYMBOL PARAMETER CONDITIONS TYP. MAX. UNIT R th j-hs Junction to heatsink without heatsink compound - 3.7 K/W R th j-hs Junction to heatsink with heatsink compound - 2.8 K/W R th j-a Junction to ambient in free air 35 - K/W ISOLATION LIMITING VALUE & CHARACTERISTIC Ths = 25 ˚C unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT V isol Repetitive peak voltage from all R.H. ≤ 65 % ; clean and dustfree - 2500 V three terminals to external heatsink C isol Capacitance from T2 to external f = 1 MHz - 22 - pF heatsink STATIC CHARACTERISTICS Ths = 25 ˚C unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT I CES Collector cut-off current 2 VBE = 0 V; VCE = VCESMmax - - 1.0 mA ICES VBE = 0 V; VCE = VCESMmax ; - - 2.0 mA Tj = 125 ˚C IEBO Emitter cut-off current V EB = 7.5 V; IC = 0 A - 227 - mA BV EBO Emitter-base breakdown voltage IB = 600 mA 7.5 13.5 - V R be Base-emitter resistance V EB = 7.5 V - 33 - Ω VCEOsust Collector-emitter sustaining voltage IB = 0 A; IC = 100 mA; 700 - - V L = 25 mH VCEsat Collector-emitter saturation voltage IC = 4.5 A; IB = 1.12 A - - 1.0 V VBEsat Base-emitter saturation voltage IC = 4.5 A; IB = 1.7 A - - 1.1 V hFE DC current gain I C = 1 A; VCE = 5 V - 13 - hFE IC = 4.5 A; VCE = 1 V 4 5.5 7.0 VF Diode forward voltage I F = 4.5 A - 1.6 2.0 V DYNAMIC CHARACTERISTICS Ths = 25 ˚C unless otherwise specified SYMBOL PARAMETER CONDITIONS TYP. MAX. UNIT C c Collector capacitance I E = 0 A; VCB = 10 V; f = 1 MHz 80 - pF Switching times (16 kHz line I Csat = 4.5 A; IB(end) = 1.1 A; LB = 6 µH; deflection circuit) -V BB = 4 V; (-dIB/dt = 0.6 A/µs) ts Turn-off storage time 5.0 6.0 µs tf Turn-off fall time 0.4 0.6 µs Switching times (38 kHz line I Csat = 4.0 A; IB(end) = 0.9 A; LB = 6 µH; deflectioin circuit) -V BB = 4 V; (-dIB/dt = 0.6 A/µs) ts Turn-off storage time 4.7 5.7 µs tf Turn-off fall time 0.25 0.35 µs 2 Measured with half sine-wave voltage (curve tracer). July 1998 2 Rev 1.600

Philips Semiconductors Product specification Silicon Diffused Power Transistor BU2508DF Fig.1. 16kHz Switching times waveforms. Fig.2. Switching times definitions. Fig.3. 16kHz Switching times test circuit. Fig.4. Typical DC current gain. hFE = f (IC ) parameter VCE Fig.5. Typical base-emitter saturation voltage. VBE sat = f (IC ); parameter IC /IB Fig.6. Typical collector-emitter saturation voltage. VCE sat = f (IC ); parameter IC /IB IC IB VCE ICsat IBend 64us 26us20us t t t TRANSISTOR DIODE 0.01 1 IC / A BU2508DF100 0.1 10 Tj = 25 C Tj = 125 C 5V h FE ICsat 90 % 10 % tf ts IBend IC IB t t - IBM 0.1 1 10 IC / A VBESAT / V BU2508DF 1.2 1.1 0.9 0.8 0.7 0.6 0.5 0.4 Tj = 25 C Tj = 125 C IC/IB= + 150 v nominal adjust for ICsat 1mH 12nF D.U.T. LBIBend -VBB Rbe 0.1 1 10 IC / A VCESAT / V BU2508DF 0.9 0.8 0.7 0.6 0.5 0.4 0.3 0.2 0.1 Tj = 25 C Tj = 125 C IC/IB= July 1998 3 Rev 1.600

Philips Semiconductors Product specification Silicon Diffused Power Transistor BU2508DF Fig.7. Typical base-emitter saturation voltage. VBE sat = f (IB); parameter IC Fig.8. Typical collector-emitter saturation voltage. VCE sat = f (IB); parameter IC Fig.9. Typical turn-off losses. Tj = 85˚C Eoff = f (IB); parameter IC ; f = 16 kHz Fig.10. Transient thermal impedance. Zth j-hs = f(t); parameter D = tp/T Fig.11. Typical collector storage and fall time. ts = f (IB); tf = f (IB); parameter IC ; Tj = 85˚C; f = 16 kHz Fig.12. Normalised power dissipation. PD% = 100⋅PD /PD 25˚C = f (Ths) 0 1 2 3 4 IB / A VBESAT / V BU2508DF 1.2 1.1 0.9 0.8 0.7 0.6 Tj = 25 C Tj = 125 C IC= 4.5A 0.001 0.01 0.1 0.2 0.1 0.05 0.02 0.5 BU2508AX tp / sec Zth K/W 1.0E-06 1E-04 1E-02 1E+00 D = tp tp T T P t D 0.1 1 10 IB / A VCESAT / V BU2508DF 0.1 Tj = 25 C Tj = 125 C Tj = 25 C Tj = 125 C IC=2A 4.5A 0.1 1 10 IB / A ts, tf / us BU2508DF12 IC = 4.5A 3.5A ts tf 0.1 1 10 IB / A Eoff / uJ BU2508DF1000 100 IC = 4.5A 3.5A 0 20 40 60 80 100 120 140 Ths / C PD% Normalised Power Derating 120 110 100 with heatsink compound July 1998 4 Rev 1.600

Philips Semiconductors Product specification Silicon Diffused Power Transistor BU2508DF Fig.13. Forward bias safe operating area. Ths = 25˚C I Region of permissible DC operation. II Extension for repetitive pulse operation. NB: Mounted with heatsink compound and 30 ± 5 newton force on the centre of the envelope. Fig.14. Forward bias safe operating area. Ths = 25˚C I Region of permissible DC operation. II Extension for repetitive pulse operation. NB: Mounted without heatsink compound and 30 ± 5 newton force on the centre of the envelope. 1 10 100 1000 100 0.1 0.01 tp = 10 us 100 us 1 ms 10 ms DC IC / A VCE / V ICM max IC max = 0.01 II I Ptot max 1 10 100 1000 100 0.1 0.01 tp = 10 us 100 us 1 ms 10 ms DC IC / A VCE / V ICM max IC max = 0.01 II I Ptot max July 1998 5 Rev 1.600

Philips Semiconductors Product specification Silicon Diffused Power Transistor BU2508DF MECHANICAL DATA Dimensions in mm Net Mass: 5.5 g Fig.15. SOT199; The seating plane is electrically isolated from all terminals. Notes 1. Refer to mounting instructions for F-pack envelopes. 2. Epoxy meets UL94 V0 at 1/8". 6.2 5.8 3.5 21.5 max 15.7 min 12 3 2.1 max 1.2 1.0 0.4 2.0 0.7 max o 3.2 5.2 max 3.1 3.37.3 15.3 max 0.7 5.45 seating plane 5.45 3.5 max not tinned M July 1998 6 Rev 1.600

Philips Semiconductors Product specification Silicon Diffused Power Transistor BU2508DF DEFINITIONS Data sheet status Objective specification This data sheet contains target or goal specifications for product development. Preliminary specification This data sheet contains preliminary data; supplementary data may be published later. Product specification This data sheet contains final product specifications. Limiting values Limiting values are given in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation of the device at these or at any other conditions above those given in the Characteristics sections of this specification is not implied. Exposure to limiting values for extended periods may affect device reliability.

Application information

Where application information is given, it is advisory and does not form part of the specification.  Philips Electronics N.V. 1998 All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. The information presented in this document does not form part of any quotation or contract, it is believed to be accurate and reliable and may be changed without notice. No liability will be accepted by the publisher for any consequence of its use. Publication thereof does not convey nor imply any license under patent or other industrial or intellectual property rights. LIFE SUPPORT APPLICATIONS These products are not designed for use in life support appliances, devices or systems where malfunction of these products can be reasonably expected to result in personal injury. Philips customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such improper use or sale. July 1998 7 Rev 1.600