2501N

FDW2501N FAIRCHILD | Alldatasheet

Document overview

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Technical content

Features

• 6 A, 20 V. RDS(ON) = 0.018 Ω @ VGS = 4.5V RDS(ON) = 0.028 Ω @ VGS = 2.5V
• Extended VGSS range (±12V) for battery applications.
• High performance trench technology for extremely low RDS(ON)
• Low profile TSSOP-8 package TSSOP-8 Pin 1 Absolute Maximum Ratings TA=25oC unless otherwise noted Symbol Parameter Ratings Units VDSS Drain-Source Voltage 20 V VGSS Gate-Source Voltage ±12 V ID Drain Current – Continuous (Note 1a) 6 A – Pulsed 30 PD Power Dissipation (Note 1a) 1.0 W (Note 1b) 0.6 TJ, TSTG Operating and Storage Junction Temperature Range -55 to +150 °C Thermal Characteristics Rθ JA Thermal Resistance, Junction-to-Ambient (Note 1a) 125 °C/W (Note 1b) 208 Package Marking and Ordering Information Device Marking Device Reel Size Tape width Quantity 2501N FDW2501N 13’’ 12mm 3000 units FDW2501N

FDW2501N Rev E(W) Electrical Characteristics TA = 25°C unless otherwise noted Symbol Parameter Test Conditions Min Typ Max Units Off Characteristics BVDSS Drain–Source Breakdown Voltage VGS = 0 V, ID = 250 µA 20 V Δ BVDSS Δ TJ Breakdown Voltage Temperature Coefficient ID = 250 µA, Referenced to 25°C 12 mV/°C IDSS Zero Gate Voltage Drain Current VDS = 16 V, VGS = 0 V 1 µA IGSS Gate–Body Leakage VGS = ±12 V, VDS = 0 V ±100 nA On Characteristics (Note 2) VGS(th) Gate Threshold Voltage VDS = VGS, ID = 250 µA 0.4 0.9 1.5 V Δ VGS(th) Δ TJ Gate Threshold Voltage Temperature Coefficient ID = 250 µA, Referenced to 25°C -3.2 mV/°C RDS(on) Static Drain–Source On–Resistance VGS = 4.5 V, ID = 6.0 A VGS = 2.5 V, ID = 5.0 A VGS = 4.5 V, ID = 6.0A, TJ=125°C 15.5 19.6 mΩ ID(on) On–State Drain Current VGS = 4.5 V, VDS = 5 V 30 A gFS Forward Transconductance VDS = 5 V, ID = 6.0 A 32 S Dynamic Characteristics Ciss Input Capacitance 1290 pF Coss Output Capacitance 315 pF Crss Reverse Transfer Capacitance VDS = 10 V, V GS = 0 V, f = 1.0 MHz 170 pF RG Gate Resistance VGS = 15 mV, f = 1.0 MHz 2.0 Ω Switching Characteristics (Note 2) td(on) Turn–On Delay Time 10 18 ns tr Turn–On Rise Time 15 27 ns td(off) Turn–Off Delay Time 26 47 ns tf Turn–Off Fall Time VDD = 10 V, ID = 1 A, VGS = 4.5 V, RGEN = 6 Ω 9.5 19 ns Qg Total Gate Charge 12 17 nC Qgs Gate–Source Charge 2.4 nC Qgd Gate–Drain Charge VDS = 10 V, ID = 6.0 A, VGS = 4.5 V 3.3 nC Drain–Source Diode Characteristics and Maximum Ratings trr Diode Reverse Recovery Time 20 nS Qrr Diode Reverse Recovery Charge IF = 6.0 A, diF/dt = 100 A/µs 6.7 nC IS Maximum Continuous Drain–Source Diode Forward Current 0.83 A VSD Drain–Source Diode Forward Voltage VGS = 0 V, IS = 0.83 A (Note 2) 0.7 1.2 V Notes: 1. Rθ JA is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the solder mounting surface of the drain pins. Rθ JC is guaranteed by design while Rθ CA is determined by the user's board design. a) Rθ JA is 125°C/W (steady state) when mounted on a 1 inch² copper pad on FR-4. b) Rθ JA is 208°C/W (steady state) when mounted on a minimum copper pad on FR-4. 2. Pulse Test: Pulse Width < 300µs, Duty Cycle < 2.0% FDW2501N

FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY , FUNCTION OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. TRADEMARKS The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended to be an exhaustive list of all such trademarks. LIFE SUPPORT POLICY FAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION. As used herein: 1. Life support devices or systems are devices or systems which, (a) are intended for surgical implant into the body, or (b) support or sustain life, or (c) whose failure to perform when properly used in accordance with instructions for use provided in the labeling, can be reasonably expected to result in significant injury to the user. 2. A critical component is any component of a life support device or system whose failure to perform can be reasonably expected to cause the failure of the life support device or system, or to affect its safety or effectiveness. PRODUCT STATUS DEFINITIONS Definition of Terms Datasheet Identification Product Status Definition Advance Information Preliminary No Identification Needed Obsolete This datasheet contains the design specifications for product development. Specifications may change in any manner without notice. This datasheet contains preliminary data, and supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. This datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. This datasheet contains specifications on a product that has been discontinued by Fairchild semiconductor. The datasheet is printed for reference information only. Formative or In Design First Production Full Production Not In Production ISOPLANAR™ LittleFET™ MICROCOUPLER™ MicroFET™ MicroPak™ MICROWIRE™ MSX™ MSXPro™ OCX™ OCXPro™ OPTOLOGIC OPTOPLANAR™ PACMAN™ FACT Quiet Series™ FAST FASTr™ FPS™ FRFET™ GlobalOptoisolator™ GTO™ HiSeC™ I 2C™ ImpliedDisconnect™ Rev. I9 ACEx™ ActiveArray™ Bottomless™ CoolFET™ CROSSVOLT ™ DOME™ EcoSPARK™ E 2CMOS™ EnSigna™ FACT™ POP™ Power247™ PowerSaver™ PowerTrench QFET  QS™ QT Optoelectronics™ Quiet Series™ RapidConfigure™ RapidConnect™ SILENT SWITCHER SMART START™ SPM™ Stealth™ SuperFET™ SuperSOT™-3 SuperSOT™-6 SuperSOT™-8 SyncFET™ TinyLogic TINYOPTO™ TruTranslation™ UHC™ UltraFET VCX™ Across the board. Around the world.™ The Power Franchise Programmable Active Droop™