PS2501-1 NEC | Alldatasheet

Document overview

  • Manufacturer or author: Provided By ALLDATASHEET.COM(FREE DATASHEET DOWNLOAD SITE)
  • PDF pages: 12

Technical content

The information in this document is subject to change without notice. © 1988 Document No. P10025EJ7V0DS00 (7th edition) Date Published April 1998 NS CP(K) Printed in Japan PHOTOCOUPLER HIGH ISOLATION VOLTAGE SINGLE TRANSISTOR TYPE MULTI PHOTOCOUPLER SERIES The mark  shows major revised points. −NEPOC TM Series−

DESCRIPTION

The PS2501-1, -2, -4 and PS2501L-1, -2, -4 are optically coupled isolators containing a GaAs light emitting diode and an NPN silicon phototransistor. The PS2501-1, -2, -4 are in a plastic DIP (Dual In-line Package) and the PS2501L-1, -2, -4 are lead bending type (Gull-wing) for surface mount.

FEATURES

  • High isolation voltage (BV = 5 000 Vr.m.s.)
  • High collector to emitter voltage (V CEO = 80 V)
  • High-speed switching (tr = 3 µs TYP., tf = 5 µs TYP.)
  • Ordering number of taping product: PS2501L-1-E3, E4, F3, F4, PS2501L-2-E3, E4
  • UL approved: File No. E72422 (S)

APPLICATIONS

  • Power supply
  • Telephone/FAX.
  • FA/OA equipment
  • Programmable logic controller

PACKAGE DIMENSIONS (in millimeters) DIP Type 2.54 4 3 1 2 PS2501-1 (New Package) 4.6 ± 0.35 1.25±0.15 6.53.8 MAX. 4.55 MAX. 2.8 MIN. 0.50 ± 0.10 0.25M 1. Anode 2. Cathode 3. Emitter 4. Collector0 to 15˚ 7.62 10.2 MAX. 6.5 0.50 ± 0.10 0.25M 8 7 1 2 1, 3. Anode 2, 4. Cathode 5, 7. Emitter 6, 8. Collector PS2501-2 20.3 MAX. 6.5 0.50 ± 0.10 0.25M 1615 1 2 1413 3 4 1211 5 6 10 9 PS2501-4 5.1 MAX. 6.5 PS2501-1 20.3 MAX. 6.5 7.62 0.50 ± 0.10 0.25M PS2501-4 (New Package) 0 to 15˚ TOP VIEW TOP VIEW TOP VIEW 16 15 1 2 1, 3, 5, 7. Anode 2, 4, 6, 8. Cathode 9,11,13,15. Emitter 10,12,14,16. Collector 1413 1211 10 9 TOP VIEW 0.65 3.8 MAX. 4.55 MAX. 2.8 MIN. 0.65 2.54 1.25±0.15 4 3 1 2 TOP VIEW 3.8 MAX. 4.55 MAX. 2.8 MIN. 0.65 2.54 0.25M 7.62 0 to 15˚ 7.62 0 to 15˚ 2.54 1.25±0.15 3.8 MAX. 4.55 MAX. 2.8 MIN. 0.65 7.62 0 to 15˚ 3.8 MAX. 4.55 MAX. 2.8 MIN. 0.65 2.54 1.25±0.15 1. Anode 2. Cathode 3. Emitter 4. Collector 1, 3, 5, 7. Anode 2, 4, 6, 8. Cathode 9,11,13,15. Emitter 10,12,14,16. Collector Caution New package 1-ch, 4-ch only

PS2501L-1 (New Package) 4.6 ± 0.35 6.5 3.8 MAX. 10.2 MAX. 8 7 1 2 PS2501L-2 20.3 MAX. 1615 1 2 1413 3 4 1211 5 6 10 9 PS2501L-4 5.1 MAX. PS2501L-1 20.3 MAX. PS2501L-4 (New Package) TOP VIEW TOP VIEW TOP VIEW 16 15 1 2 1413 1211 10 9 TOP VIEW 4 3 1 2 TOP VIEW 2.54 1.25±0.15 0.25M 9.60 ± 0.4 0.90 ± 0.25 7.62 0.05 to 0.2 6.5 3.8 MAX. 2.54 1.25±0.15 0.25M 9.60 ± 0.4 0.90 ± 0.25 7.62 0.05 to 0.2 6.5 3.8 MAX. 2.54 1.25±0.15 0.25M 9.60 ± 0.4 0.90 ± 0.25 7.62 0.05 to 0.2 9.60 ± 0.4 0.90 ± 0.25 7.62 0.05 to 0.2 2.54 1.25±0.15 0.25M 3.8 MAX. 6.5 2.54 1.25±0.15 0.25M 9.60 ± 0.4 0.90 ± 0.25 7.62 0.05 to 0.2 3.8 MAX. 6.5 1. Anode 2. Cathode 3. Emitter 4. Collector 1, 3. Anode 2, 4. Cathode 5, 7. Emitter 6, 8. Collector 1, 3, 5, 7. Anode 2, 4, 6, 8. Cathode 9,11,13,15. Emitter 10,12,14,16. Collector 1. Anode 2. Cathode 3. Emitter 4. Collector 1, 3, 5, 7. Anode 2, 4, 6, 8. Cathode 9,11,13,15. Emitter 10,12,14,16. Collector Caution New package 1-ch, 4-ch only

ABSOLUTE MAXIMUM RATINGS (T A = 25 °°°°C, unless otherwise specified) Ratings Parameter Symbol PS2501-1, PS2501L-1 PS2501-2,-4 PS2501L-2,-4 Unit Diode Reverse Voltage V R 6V Forward Current (DC) I F 80 mA Power Dissipation DeratingΔPD /°C 1.5 1.2 mW/ °C Power Dissipation P D 150 120 mW/ch Peak Forward Current IFP 1A Transistor Collector to Emitter Voltage VCEO 80 V Emitter to Collector Voltage VECO 7V Collector Current I C 50 mA/ch Power Dissipation DeratingΔPC /°C 1.5 1.2 mW/ °C Power Dissipation P C 150 120 mW/ch Isolation Voltage BV 5 000 Vr.m.s. Operating Ambient Temperature T A −55 to +100 °C Storage Temperature T stg −55 to +150 °C *1 PW = 100 µs, Duty Cycle = 1 % *2 AC voltage for 1 minute at TA = 25 °C, RH = 60 % between input and output

ELECTRICAL CHARACTERISTICS (T A = 25 °°°°C) Parameter Symbol Conditions MIN. TYP. MAX. Unit Diode Forward Voltage V F IF = 10 mA 1.17 1.4 V Reverse Current I R VR = 5 V 5 µA Terminal Capacitance C t V = 0 V, f = 1.0 MHz 50 pF Transistor Collector to Emitter Dark Current ICEO VCE = 80 V, IF = 0 mA 100 nA Coupled Current Transfer Ratio (IC /IF) CTR I F = 5 mA, VCE = 5 V 80 300 600 % Collector Saturation Voltage VCE (sat) IF = 10 mA, IC = 2 mA 0.3 V Isolation Resistance R I-O VI-O = 1.0 kVDC 10 Ω Isolation Capacitance C I-O V = 0 V, f = 1.0 MHz 0.5 pF Rise Time tr VCC = 10 V, IC = 2 mA, RL = 100 Ω 3 µs Fall Time tf 5 *1 CTR rank ( * : only PS2501-1, PS2501L-1) *2 Test circuit for switching time M* : 80 to 240 (%) H* : 80 to 160 (%) N : 80 to 600 (%) PW = 100 s Duty Cycle = 1/10 µ Pulse Input VCC VOUT R L = 100 Ω50 Ω IF

TYPICAL CHARACTERISTICS (T A = 25 °°°°C, unless otherwise specified) 150 100 02 5 5 0 7 5 100 125 150 1.5 mW/˚C 1.2 mW/˚C 150 100 25 50 100 125 1500 10 000 100 1 000 100 7550250–25–5 0 VCE = 80 V 0.5 0.1 10 mA 1.5 mW/˚C 1.2 mW/˚C 20 mA 50 mA 2 mA IF = 1 mA 5 mA 40 V 24 V 10 V 5 V PS2501-1 PS2501L-1 PS2501-2 PS2501L-2 PS2501-4 PS2501L-4 PS2501-1 PS2501L-1 PS2501-2 PS2501L-2 PS2501-4 PS2501L-4 100 0.5 0.1 0 ˚C –25 ˚C –55 ˚C +60 ˚C +25 ˚C TA = +100 ˚C Diode Power Dissipation PD (mW) Transistor Power Dissipation PC (mW) Ambient Temperature TA (˚C) Forward Current IF (mA) Forward Voltage VF (V) Collector to Emitter Dark Current ICEO (nA) Collector Saturation Voltage VCE(sat) (V) Ambient Temperature TA (˚C) Ambient Temperature TA (˚C) DIODE POWER DISSIPATION vs. AMBIENT TEMPERATURE TRANSISTOR POWER DISSIPATION vs. AMBIENT TEMPERATURE FORWARD CURRENT vs. FORWARD VOLTAGE COLLECTOR TO EMITTER DARK CURRENT vs. AMBIENT TEMPERATURE COLLECTOR CURRENT vs. COLLECTOR SATURATION VOLTAGE Collector Current IC (mA) 0 4 6 81 0 20 mA IF = 5 mA 10 mA 50 mA Collector Current IC (mA) Collector to Emitter Voltage VCE (V) COLLECTOR CURRENT vs. COLLECTOR TO EMITTER VOLTAGE

1.2 –50 1.0 0.8 0.6 0.4 0.2 0 –25 0 25 50 75 100 0.1 10 k5 k1 k5001005010 1 000 100 100 k50 k10 k5 k1 k500100 –10 –15 –20 0.5 1 2 5 10 20 50 100 200 500 IC = 2 mA, VCC = 10 V, CTR = 290 % tf tr td ts IF = 5 mA, VCC = 5 V, CTR = 290 % ts td tr tf IF = 5 mA, VCE = 5 V 100 Ω 300 Ω RL = 1 kΩ Normalized to 1.0 at TA = 25 ˚C, IF = 5 mA, VCE = 5 V Forward Current IF (mA)Ambient Temperature TA (˚C) Load Resistance RL (Ω ) Frequency f (kHz) Normalized Current Transfer Ratio CTR Current Transfer Ratio CTR (%) Normalized Gain GV Load Resistance RL (Ω ) Switching Time t ( s) µ NORMALIZED CURRENT TRANSFER RATIO vs. AMBIENT TEMPERATURE CURRENT TRANSFER RATIO vs. FORWARD CURRENT SWITCHING TIME vs. LOAD RESISTANCE SWITCHING TIME vs. LOAD RESISTANCE FREQUENCY RESPONSE Switching Time t ( s) µ 450 400 350 300 250 200 150 100 0.05 0.1 0.5 1 5 10 50 TA = 25 ˚C TA = 60 ˚C 1.2 1.0 0.8 0.6 0.4 0.2 0 10 2 103 104 105 Time (Hr) CTR (Relative Value) LONG TERM CTR DEGRADATION IF = 5 mA (TYP.) Remark The graphs indicate nominal characteristics.

TAPING SPECIFICATIONS (in millimeters) Tape Direction PS2501L-1-E3 PS2501L-1-F3 PS2501L-1-E4 PS2501L-1-F4 Outline and Dimensions (Tape) Outline and Dimensions (Reel) Packing: PS2501L-1-E3, E4 1 000 pcs/reel 2.0±0.5 R 1.0 13.0±0.5φ 21.0±0.8φ 16.4+2.0–0.0 PS2501L-1-E3, E4: 250 PS2501L-1-F3, F4: 330 φ 80.0±5.0φ φ PS2501L-1-F3, F4 2 000 pcs/reel 1.55±0.1 2.0±0.1 4.0±0.1 1.55±0.1 1.75±0.1 4.3±0.2 10.3±0.1 0.3 7.5±0.1 16.0±0.3 5.6±0.1 8.0±0.1

Outline and Dimensions (Tape) 1.55±0.1 2.0±0.1 4.0±0.1 1.55±0.1 1.75±0.1 4.3±0.2 10.3±0.1 0.3 7.5±0.1 16.0±0.3 10.4±0.1 12.0±0.1 Outline and Dimensions (Reel) Packing: 1 000 pcs/reel 16.4+2.0–0.0 80.0±5.0φ 330φ 2.0±0.5 R 1.0 13.0±0.5φ 21.0±0.8φ

RECOMMENDED SOLDERING CONDITIONS (1) Infrared reflow soldering

  • Peak reflow temperature 235 °C (package surface temperature)
  • Time of temperature higher than 210 °C 30 seconds or less
  • Number of reflows Three
  • Flux Rosin flux containing small amount of chlorine (The flux with a maximum chlorine content of 0.2 Wt % is recommended.) 60 to 90 s (preheating) 210 ˚C 120 to 160 ˚C Package Surface Temperature T (˚C) Time (s) (heating) to 10 s to 30 s 235 ˚C (peak temperature) Recommended Temperature Profile of Infrared Reflow Peak temperature 235 ˚C or below Caution Avoid removing the residual flux with chlorine-based cleaning solvent after a reflow process. (2) Dip soldering
  • Temperature 260 °C or below (molten solder temperature)
  • Time 10 seconds or less
  • Number of times One
  • Flux Rosin flux containing small amount of chlorine (The flux with a maximum chlorine content of 0.2 Wt % is recommended.)

[MEMO]

Within this device there exists GaAs (Gallium Arsenide) material which is a harmful substance if ingested. Please do not under any circumstances break the hermetic seal. NEPOC is a trademark of NEC Corporation. No part of this document may be copied or reproduced in any form or by any means without the prior written consent of NEC Corporation. NEC Corporation assumes no responsibility for any errors which may appear in this document. NEC Corporation does not assume any liability for infringement of patents, copyrights or other intellectual property rights of third parties by or arising from use of a device described herein or any other liability arising from use of such device. No license, either express, implied or otherwise, is granted under any patents, copyrights or other intellectual property rights of NEC Corporation or others. While NEC Corporation has been making continuous effort to enhance the reliability of its semiconductor devices, the possibility of defects cannot be eliminated entirely. To minimize risks of damage or injury to persons or property arising from a defect in an NEC semiconductor device, customers must incorporate sufficient safety measures in its design, such as redundancy, fire-containment, and anti-failure features. NEC devices are classified into the following three quality grades: "Standard", "Special", and "Specific". The Specific quality grade applies only to devices developed based on a customer designated "quality assurance program" for a specific application. The recommended applications of a device depend on its quality grade, as indicated below. Customers must check the quality grade of each device before using it in a particular application. Standard: Computers, office equipment, communications equipment, test and measurement equipment, audio and visual equipment, home electronic appliances, machine tools, personal electronic equipment and industrial robots Special: Transportation equipment (automobiles, trains, ships, etc.), traffic control systems, anti-disaster systems, anti-crime systems, safety equipment and medical equipment (not specifically designed for life support) Specific: Aircrafts, aerospace equipment, submersible repeaters, nuclear reactor control systems, life support systems or medical equipment for life support, etc. The quality grade of NEC devices is "Standard" unless otherwise specified in NEC's Data Sheets or Data Books. If customers intend to use NEC devices for applications other than those specified for Standard quality grade, they should contact an NEC sales representative in advance. Anti-radioactive design is not implemented in this product. M4 96. 5