23ACC12T4V10

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• PDF pages: 9

Technical content

Features

• T r e n c h 4 I G B T s
• Robust and soft freewheeling diodes in CAL technology
• Highly reliable spring contacts for electrical connections
• UL recognised: File no. E63532 Typical Applications*
• 4 Q i n v e r t e r s Remarks
• Max. case temperature limited to TC=125°C
• Product reliability results valid for Tj≤150°C (recommended Tj,op=-40...+150°C)
• Terminal distances sufficient for basic insulation in 3-phase 480VAC TN systems
• DC-link voltage V DC≤800V
• Temperature sensor: no basic insulation to main circuit, signal processing with reference to –DC potential
• Please refer to MiniSKiiP “Technical Explanations” and “Mounting Instructions” for further information Absolute Maximum Ratings Symbol Conditions Values Unit IGBT 1 - 6 VCES Tj =2 5° C 1200 V IC λpaste=0.8 W/(mK) Tj = 175 °C Ts =2 5° C 28 A Ts =7 0° C 23 A IC λpaste=2.5 W/(mK) Tj = 175 °C Ts =2 5° C 31 A Ts =7 0° C 26 A ICnom 15 A ICRM ICRM = 3 x ICnom 45 A VGES -20 ... 20 V tpsc VCC = 800 V VGE ≤ 15 V VCES ≤ 1200 V Tj =1 5 0° C 10 µs Tj -40 ... 175 °C IGBT 7 - 12 VCES Tj =2 5° C 1200 V IC λpaste=0.8 W/(mK) Tj = 175 °C Ts =2 5° C 41 A Ts =7 0° C 34 A IC λpaste=2.5 W/(mK) Tj = 175 °C Ts =2 5° C 45 A Ts =7 0° C 37 A ICnom 25 A ICRM ICRM = 3 x ICnom 75 A VGES -20 ... 20 V tpsc VCC = 800 V VGE ≤ 15 V VCES ≤ 1200 V Tj =1 5 0° C 10 µs Tj -40 ... 175 °C Diode 1 - 6 VRRM Tj =2 5° C 1200 V IF λpaste=0.8 W/(mK) Tj = 175 °C Ts =2 5° C 23 A Ts =7 0° C 19 A IF λpaste=2.5 W/(mK) Tj = 175 °C Ts =2 5° C 25 A Ts =7 0° C 20 A IFnom 15 A IFRM IFRM = 3xIFnom 45 A IFSM 10 ms, sin 180°, Tj =1 5 0° C 6 5 A Tj -40 ... 175 °C Diode 7 - 12 VRRM Tj =2 5° C 1200 V IF λpaste=0.8 W/(mK) Tj = 175 °C Ts =2 5° C 32 A Ts =7 0° C 26 A IF λpaste=2.5 W/(mK) Tj = 175 °C Ts =2 5° C 35 A Ts =7 0° C 28 A IFnom 25 A IFRM IFRM = 3 x IFnom 75 A IFSM 10 ms, sin 180°, Tj =1 5 0° C 1 0 0 A Tj -40 ... 175 °C Module It(RMS) 20 A per spring 40 A Tstg -40 ... 125 °C Visol AC sinus 50 Hz, 1 min 2500 V

2 Rev. 4.0 – 20.11.2015 © by SEMIKRON MiniSKiiP® 2 ACC Twin 6-pack SKiiP 23ACC12T4V10

• T r e n c h 4 I G B T s
• Robust and soft freewheeling diodes in CAL technology
• Highly reliable spring contacts for electrical connections
• UL recognised: File no. E63532 Typical Applications*
• 4 Q i n v e r t e r s Remarks
• Max. case temperature limited to TC=125°C
• Product reliability results valid for Tj≤150°C (recommended Tj,op=-40...+150°C)
• Terminal distances sufficient for basic insulation in 3-phase 480VAC TN systems
• DC-link voltage V DC≤800V
• Temperature sensor: no basic insulation to main circuit, signal processing with reference to –DC potential
• Please refer to MiniSKiiP “Technical Explanations” and “Mounting Instructions” for further information Characteristics Symbol Conditions min. typ. max. Unit IGBT 1 - 6 VCE(sat) IC =1 5A VGE =1 5V chiplevel Tj =2 5° C 1.85 2.10 V Tj =1 5 0° C 2.25 2.45 V VCE0 chiplevel Tj =2 5° C 0.80 0.90 V Tj =1 5 0° C 0.70 0.80 V rCE VGE =1 5V chiplevel Tj =2 5° C 70 80 m Ω Tj =1 5 0° C 103 110 m Ω VGE(th) VGE =V CE V, IC =1m A 55 . 8 6 . 5 V ICES VGE =0V VCE = 1200 V Tj =2 5° C 0.1 0.3 mA mA Cies VCE =2 5V VGE =0V f=1M H z 0.90 nF Coes f=1M H z 0.08 nF Cres f=1M H z 0.06 nF QG VGE = - 8 V...+ 15 V 85 nC RGint Tj =2 5° C 0.0 Ω td(on) VCC = 600 V IC =1 5A RG on =3 9 Ω RG off =3 9 Ω di/dton =2 0 0A / µ s di/dtoff =1 8 9A / µ s du/dt = 3600 V/µs V GE = +15/-15 V Ls =2 2n H Tj =1 5 0° C 78 ns tr Tj =1 5 0° C 64 ns Eon Tj =1 5 0° C 1.89 mJ td(off) Tj =1 5 0° C 340 ns tf Tj =1 5 0° C 67 ns Eoff Tj =1 5 0° C 1.64 mJ Rth(j-s) per IGBT, λpaste=0.8 W/(mK) 1.3 K/W Rth(j-s) per IGBT, λpaste=2.5 W/(mK) 1.1 K/W IGBT 7 - 12 VCE(sat) IC =2 5A VGE =1 5V chiplevel Tj =2 5° C 1.85 2.10 V Tj =1 5 0° C 2.25 2.45 V VCE0 chiplevel Tj =2 5° C 0.80 0.90 V Tj =1 5 0° C 0.70 0.80 V rCE VGE =1 5V chiplevel Tj =2 5° C 42 48 m Ω Tj =1 5 0° C 62 66 m Ω VGE(th) VGE =V CE V, IC =1m A 55 . 8 6 . 5 V ICES VGE =0V VCE = 1200 V Tj =2 5° C 0.1 0.3 mA -m A Cies VCE =2 5V VGE =0V f=1M H z 1.43 nF Coes f=1M H z 0.12 nF Cres f=1M H z 0.09 nF QG VGE = - 8 V...+ 15 V 142 nC RGint Tj =2 5° C 0 Ω td(on) VCC = 600 V IC =2 5A RG on =3 9 Ω RG off =3 9 Ω di/dton =3 2 5A / µ s di/dtoff =3 3 0A / µ s du/dt = 3500 V/µs V GE = +15/-15 V Ls =2 2n H Tj =1 5 0° C 87 ns tr Tj =1 5 0° C 61 ns Eon Tj =1 5 0° C 3.5 mJ td(off) Tj =1 5 0° C 400 ns tf Tj =1 5 0° C 61 ns Eoff Tj =1 5 0° C 2.7 mJ Rth(j-s) per IGBT, λpaste=0.8 W/(mK) 1K / W Rth(j-s) per IGBT, λpaste=2.5 W/(mK) 0.84 K/W

© by SEMIKRON Rev. 4.0 – 20.11.2015 3 MiniSKiiP® 2 ACC Twin 6-pack SKiiP 23ACC12T4V10

• T r e n c h 4 I G B T s
• Robust and soft freewheeling diodes in CAL technology
• Highly reliable spring contacts for electrical connections
• UL recognised: File no. E63532 Typical Applications*
• 4 Q i n v e r t e r s Remarks
• Max. case temperature limited to TC=125°C
• Product reliability results valid for Tj≤150°C (recommended Tj,op=-40...+150°C)
• Terminal distances sufficient for basic insulation in 3-phase 480VAC TN systems
• DC-link voltage V DC≤800V
• Temperature sensor: no basic insulation to main circuit, signal processing with reference to –DC potential
• Please refer to MiniSKiiP “Technical Explanations” and “Mounting Instructions” for further information Characteristics Symbol Conditions min. typ. max. Unit Diode 1 - 6 VF = VEC IF =1 5A VGE =0V chiplevel Tj =2 5° C 2.38 2.71 V Tj =1 5 0° C 2.44 2.77 V VF0 chiplevel Tj =2 5° C 1.30 1.50 V Tj =1 5 0° C 0.90 1.10 V rF chiplevel Tj =2 5° C 72 81 m Ω Tj =1 5 0° C 103 111 m Ω IRRM IF =1 5A di/dtoff =2 6 0A / µ s VGE =- 1 5V VCC = 600 V Tj =1 5 0° C 10.7 A Qrr Tj =1 5 0° C 2.2 µC Err Tj =1 5 0° C 0.72 mJ Rth(j-s) per Diode, λpaste=0.8 W/(mK) 1.92 K/W Rth(j-s) per Diode, λpaste=2.5 W/(mK) 1.7 K/W Diode 7 - 12 VF = VEC IF =2 5A VGE =0V chiplevel Tj =2 5° C 2.41 2.74 V Tj =1 5 0° C 2.45 2.79 V VF0 chiplevel Tj =2 5° C 1.30 1.50 V Tj =1 5 0° C 0.90 1.10 V rF chiplevel Tj =2 5° C 44 50 m Ω Tj =1 5 0° C 62 68 m Ω IRRM IF =2 5A di/dtoff =3 2 0A / µ s VGE =- 1 5V VCC = 600 V Tj =1 5 0° C 13.8 A Qrr Tj =1 5 0° C 3.3 µC Err Tj =1 5 0° C 1.15 mJ Rth(j-s) per Diode, λpaste=0.8 W/(mK) 1.52 K/W Rth(j-s) per Diode, λpaste=2.5 W/(mK) 1.3 K/W Module LCE 30 nH Ms to heat sink 2 2.5 Nm w5 5 g Temperature Sensor R100 Tr=100°C (R25=1000Ω) 1670 ± 3% Ω R(T) R(T)=1000Ω[1+A(T-25°C)+B(T-25°C)2

4 Rev. 4.0 – 20.11.2015 © by SEMIKRON IGBT 1-6 - Fig. 1: Typ. output characteristic IGBT 1-6 - Fig. 2: Typ. rated current vs. temperature I C = f(TS) IGBT 1-6 - Fig. 3: Typ. turn-on /-off energy = f(I IGBT 1-6 - Fig. 4: Typ. turn-on /-off energy = f(R IGBT 1-6 - Fig. 5: Typ. transfer characteristic IGBT 1-6 - Fig. 6: Typ. gate charge characteristic

© by SEMIKRON Rev. 4.0 – 20.11.2015 5 IGBT 1-6 - Fig. 7: Typ. switching times vs. IC IGBT 1-6 - Fig. 8: Typ. switching times vs. gate resistor R G IGBT 1-6 - Fig. 9: Transient thermal impedance of IGBT and Diode IGBT 1-6 - Fig. 10: CAL diode forward characteristic IGBT 1-6 - Fig. 11: Typ. CAL diode peak reverse recovery current IGBT 1-6 - Fig. 12: Typ. CAL diode recovery charge

6 Rev. 4.0 – 20.11.2015 © by SEMIKRON IGBT 7-12 - Fig. 1: Typ. output characteristic IGBT 7-12 - Fig. 2: Typ. rated current vs. temperature I C = f(TS) IGBT 7-12 - Fig. 3: Typ. turn-on /-off energy = f(I IGBT 7-12 - Fig. 4: Typ. turn-on / -off energy = f(R IGBT 7-12 - Fig. 5: Typ. transfer characteristic IGBT 7-12 - Fig. 6: Typ. gate charge characteristic

© by SEMIKRON Rev. 4.0 – 20.11.2015 7 IGBT 7-12 - Fig. 7: Typ. switching times vs. IC IGBT 7-12 - Fig. 8: Typ. switching times vs. gate resistor R G IGBT 7-12 - Fig. 9: Transient thermal impedance of IGBT and Diode IGBT 7-12 - Fig. 10: CAL diode forward characteristic IGBT 7-12 - Fig. 11: Typ. CAL diode peak reverse recovery current IGBT 7-12 - Fig. 12: Typ. CAL diode recovery charge

8 Rev. 4.0 – 20.11.2015 © by SEMIKRON pinout, dimensions pinout

© by SEMIKRON Rev. 4.0 – 20.11.2015 9 This is an electrostatic discharge sensitive device (ESDS), international standard IEC 60747-1, chapter IX. *IMPORTANT INFORMATION AND WARNINGS The specifications of SEMIKRON products may not be consid ered as guarantee or assurance of product characteristics ("Beschaffenheitsgarantie"). The specifications of SEMIKRON products describe only the usual characteristics of products to be expected in typical applications, which may still vary depending on the specific application. Therefore, products must be tested for the re spective application in advance. Application adjustments may be necessary. The user of SEMIKRON products is responsible for the safety o f their applications embedding SEMIKRON products and must take adequate safety measures to prevent the applications from causing a phys ical injury, fire or other problem if any of SEMIKRON products become faulty. The user is responsible to make sure that the application design is compliant with all applicable laws, regulations, norms and standards. Except as otherwise explicitly approved by SEMIKRON in a written document signed by authorized representatives of SEMIKRON, SEMIKR ON products may not be used in any applications where a failure of the product or any consequences of the use thereof can reasonably be expected to result in personal injury. No representation or warranty is given and no liability is assumed with respect to the accuracy, completeness and/or use of any information herein, including without limitation, warranties of non-infringement of intellectual property rights of any third party. SEMIKRON does not assume any liability arisi ng out of the applications or use of any product; neither does it convey any license under its patent rights, copyrights, trade secrets or ot her intellectual property rights, nor the rights of others. SEMIKRON makes no re presentation or warranty of non-infringement or alleged non-infringement of intellectual property rights of any third party which may arise fr om applications. Due to technical requirements our products may contain dangerous substances. For information on the types in question pl ease contact the nearest SEMIKRON sales office. This document supersedes and replaces all information previously supplied and ma y be superseded by updates. SEMIKRON reserves the right to ma ke changes.