22N20

22N20 UTC | Alldatasheet

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UNISONIC TECHNOLOGIES CO., LTD 22N20 Preliminary Power MOSFET www.unisonic.com.tw 1 of 6 Copyright © 2011 Unisonic Technologies Co., Ltd QW-R502-611.b 22A, 200V N-CHANNEL POWER MOSFET „ DESCRIPTION The UTC 22N20 is an N-channel enhancement mode power MOSFET using UTC’s advanced tech nology to provide customers with planar stripe and DMOS technology. This technology is specialized in allowing a minimu m on-state resistance and superior switching performance. It also can withstand high energy pulse in the avalanche and commutation mode. The UTC 22N20 is universally applied in low voltage such as automotive, high efficiency switch ing for DC/DC converters and DC motor control. „ FEATURES * Fast switching * RDS(on) = 0.14Ω @VGS = 10 V * Typically 20nC low gate charge * 100% avalanche tested * Typically 25pF Low C RSS * Improved dv/dt capability „ SYMBOL 1.Gate 3.Source 2.Drain TO-252 TO-2201 „ ORDERING INFORMATION Ordering Number Package Pin Assignment Packing Lead Free Halogen Free 1 2 3 22N20L-TA3-T 22N20G-TA3-T TO-220 G D S Tube 22N20L-TN3-R 22N20G-TN3-R TO-252 G D S Tape Reel 22N20L-TN3-T 22N20G-TN3-T TO-252 G D S Tube Note: Pin Assignment: G: Gate D: Drain S: Source

22N20 Preliminary Power MOSFET UNISONIC TECHNOLOGIES CO., LTD 2 of 6 www.unisonic.com.tw QW-R502-611.b „ ABSOLUTE MAXIMUM RATINGS (TC=25°C, unless otherwise specified) PARAMETER SYMBOL RATINGS UNIT Drain-Source Voltage V DSS 200 V Gate-Source Voltage V GSS ±30 V Drain Current Continuous (TC=25°C) I D 22 A Pulsed (Note 2) I DM 88 A Avalanche Energy Single Pulsed (Note 3) E AS 250 mJ Power Dissipation (TC=25°C) TO-220 PD

192 W TO-252 83

Derate above 25°C TO-220 1.53 W/°C TO-252 0.67 Junction Temperature T J +150 °C Storage Temperature T STG -55~+150 °C Note: 1. Absolute maximum ratings are those values beyond which the device could be permanently damaged. Absolute maximum ratings are stress ratings only and functional device operation is not implied. 2. Repetitive Rating: Pulse width lim ited by maximum junction temperature 3. L =0.85mH, I AS = 21A, VDD = 50V, RG = 25Ω, Starting TJ = 25°C „ THERMAL DATA PARAMETER SYMBOL RATINGS UNIT Junction to Ambient TO-220 θJA 62.5 °C/W TO-252 110 Junction to Case TO-220 θJC 0.65 °C/W TO-252 1.5 „ ELECTRICAL CHARACTERISTICS (TC=25°C, unless otherwise specified) PARAMETER SYMBOL TEST CONDITIONS MIN TYP MAX UNIT OFF CHARACTERISTICS Drain-Source Breakdown Voltage BV DSS I D=250µA, VGS=0V 200 V Breakdown Voltage Temperature Coefficient BV△ DSS/T△ J Reference to 25°C, ID=250µA 0.25 V/°C Drain-Source Leakage Current I DSS VDS=200V, VGS=0V 1 µAVDS=160V, TC=125°C 10 Gate- Source Leakage Current Forward IGSS VGS=+30V, VDS=0V +100 nA Reverse V GS=-30V, VDS=0V -100 nA ON CHARACTERISTICS Gate Threshold Voltage V GS(TH) V DS=VGS, ID=250µA 3.0 5.0 V Static Drain-Source On-State Resistance R DS(ON) V GS=10V, ID=11A 0.12 0.14 Ω DYNAMIC PARAMETERS Input Capacitance C ISS VGS=0V, VDS=25V, f=1.0MHz 1700 2200 pF Output Capacitance C OSS 220 290 pF Reverse Transfer Capacitance C RSS 30 40 pF SWITCHING PARAMETERS Total Gate Charge Q G VGS=10V, VDS=160V, ID=22A (Note 1, 2) 27 35 nC Gate to Source Charge Q GS 5.8 nC Gate to Drain Charge Q GD 11.2 nC Turn-ON Delay Time t D(ON) VDD=100V, ID=22A, RG=25Ω (Note 1, 2) 35 80 ns Rise Time t R 300 610 ns Turn-OFF Delay Time t D(OFF) 130 270 ns Fall-Time t F 180 370 ns

22N20 Preliminary Power MOSFET UNISONIC TECHNOLOGIES CO., LTD 3 of 6 www.unisonic.com.tw QW-R502-611.b „ ELECTRICAL CHARACTERISTICS(Cont.) PARAMETER SYMBOL TEST CONDITIONS MIN TYP MAX UNIT SOURCE- DRAIN DIODE RATINGS AND CHARACTERISTICS Maximum Body-Diode Continuous Current I S 22 A Maximum Body-Diode Pulsed Current I SM 88 A Drain-Source Diode Forward Voltage V SD I S=22A, VGS=0V 1.5 V Note: 1. Pulse Test: Pulse width ≤ 300µs, Duty cycle ≤ 2% 2. Essentially independent of operating temperature

22N20 Preliminary Power MOSFET UNISONIC TECHNOLOGIES CO., LTD 4 of 6 www.unisonic.com.tw QW-R502-611.b „ TEST CIRCUITS AND WAVEFORMS 50kΩ 300nF DUT VDS 10V12V Charge QGS QGD QG Gate Charge Test Circuit Gate Charge Waveforms VGS VGS 200nF Same Type as DUT 3mA 10V tP RG DUT L VDS ID VDD Unclamped Inductive Switching Test Circuit tP VDD IAS BVDSS ID(t) VDS(t) Time EAS= 2

1 LIAS

2 BVDSS

Unclamped Inductive Switching Waveforms

22N20 Preliminary Power MOSFET UNISONIC TECHNOLOGIES CO., LTD 5 of 6 www.unisonic.com.tw QW-R502-611.b „ TEST CIRCUITS AND WAVEFORMS(Cont.) VDS DUT RG dv/dt controlled by RG ISD controlled by pulse period VDD Peak Diode Recovery dv/dt Test Circuit & Waveforms Same Type as DUT ISD VGS L VGS (Driver) ISD (DUT) VDS (DUT) D= Gate Pulse Width Gate Pulse Period 10V di/dt Body Diode Reverse Current IRM Body Diode Recovery dv/dt VDDVSD Body Diode Forward Voltage Drop IFM, Body Diode Forward Current Driver

22N20 Preliminary Power MOSFET UNISONIC TECHNOLOGIES CO., LTD 6 of 6 www.unisonic.com.tw QW-R502-611.b UTC assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all UTC products described or contained herein. UTC products are not designed for use in life support appliances, devices or systems where malfunction of these products can be reasonably expected to result in personal injury. Reproduction in whole or in part is prohibited without the prior writ ten consent of the copyright owner. The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice.