22ACC12T7V20 SEMIKRON | Alldatasheet
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© by SEMIKRON Rev. 1.0 06.05.2022 1 MiniSKiiP® 2 ACC Twelvepack Open Emitter SKiiP 22ACC12T7V20 Features* 1200V Generation 7 IGBTs (T7) Robust and soft switching freewheeling diodes in CAL technology New SKR PEP diode technology for enhanced power and environmental robustness Highly reliable spring contacts for electrical connections UL recognized: File no. E63532 NTC T-Sensor Remarks Max. case temperature limited to TC=TS=125 °C Product reliability results valid for Tj≤150 °C; Tj,op >150°C during overload (Details see AN19-002) MiniSKiiP ″Technical Explanations″ and ″Mounting Instructions″ are part of the data sheet. Please refer to both documents for further information. For storage and case temperature with TIM see document ″Technical Explanations Thermal Interface Materials″ All diagrams refer to IGBT 7-12 and Diode 7-12 Absolute Maximum Ratings Symbol Conditions Values Unit IGBT 1 - 6 VCES Tj = 25 °C 1200 V IC λpaste=0.8 W/(mK) Tj = 175 °C Ts = 70 °C 18 A Ts = 100 °C 14 A IC λpaste=2.5 W/(mK) Tj = 175 °C Ts = 70 °C 19 A Ts = 100 °C 16 A ICnom 10 A ICRM 20 A VGES -20 ... 20 V tpsc VCC = 800 V VGE ≤ 15 V VCES ≤ 1200 V Tj = 175 °C 7 µs Tj -40 ... 175 °C IGBT 7 - 12 VCES Tj = 25 °C 1200 V IC λpaste=0.8 W/(mK) Tj = 175 °C Ts = 70 °C 23 A Ts = 100 °C 19 A IC λpaste=2.5 W/(mK) Tj = 175 °C Ts = 70 °C 26 A Ts = 100 °C 21 A ICnom 15 A ICRM 30 A VGES -20 ... 20 V tpsc VCC = 800 V VGE ≤ 15 V VCES ≤ 1200 V Tj = 175 °C 7 µs Tj -40 ... 175 °C Diode 1 - 6 VRRM Tj = 25 °C 1600 V IF λpaste=0.8 W/(mK) Tj = 175 °C Ts = 70 °C 44 A Ts = 100 °C 35 A IF λpaste=2.5 W/(mK) Tj = 175 °C Ts = 70 °C 49 A Ts = 100 °C 39 A IFRM A IFSM 10 ms, sin 180°, Tj = 150 °C 200 A Tj -40 ... 175 °C Diode 7 - 12 VRRM Tj = 25 °C 1200 V IF λpaste=0.8 W/(mK) Tj = 175 °C Ts = 70 °C 17 A Ts = 100 °C 14 A IF λpaste=2.5 W/(mK) Tj = 175 °C Ts = 70 °C 19 A Ts = 100 °C 15 A IFRM 30 A IFSM 10 ms, sin 180°, Tj = 150 °C 65 A Tj -40 ... 175 °C Module It(RMS) 20 A per spring 40 A Tstg module without TIM -40 ... 125 °C Visol AC sinus 50 Hz, 1 min 2500 V
2 Rev. 1.0 06.05.2022 © by SEMIKRON MiniSKiiP® 2 ACC Twelvepack Open Emitter SKiiP 22ACC12T7V20 Features* 1200V Generation 7 IGBTs (T7) Robust and soft switching freewheeling diodes in CAL technology New SKR PEP diode technology for enhanced power and environmental robustness Highly reliable spring contacts for electrical connections UL recognized: File no. E63532 NTC T-Sensor Remarks Max. case temperature limited to TC=TS=125 °C Product reliability results valid for Tj≤150 °C; Tj,op >150°C during overload (Details see AN19-002) MiniSKiiP ″Technical Explanations″ and ″Mounting Instructions″ are part of the data sheet. Please refer to both documents for further information. For storage and case temperature with TIM see document ″Technical Explanations Thermal Interface Materials″ All diagrams refer to IGBT 7-12 and Diode 7-12 Characteristics Symbol Conditions min. typ. max. Unit IGBT 1 - 6 VCE(sat) IC = 10 A VGE = 15 V chiplevel Tj = 25 °C 1.60 1.75 V Tj = 150 °C 1.78 1.93 V Tj = 175 °C 1.82 1.97 V VCE0 chiplevel Tj = 25 °C 1.00 1.05 V Tj = 150 °C 0.80 0.85 V Tj = 175 °C 0.76 0.81 V rCE VGE = 15 V chiplevel Tj = 25 °C 60 70 m Ω Tj = 150 °C 98 108 m Ω Tj = 175 °C 106 116 m Ω VGE(th) VGE = VCE V, IC = 0.22 mA 5.15 5.8 6.45 V ICES VGE = 0 V, V CE = 1200 V, Tj = 25 °C 1 mA Cies VCE = 25 V VGE = 0 V f = 1 MHz 1.90 nF Coes f = 1 MHz 0.02 nF Cres f = 1 MHz 0.01 nF QG VGE = - 8V ... + 15 V 140 nC RGint Tj = 25 °C 0 Ω td(on) VCC = 600 V IC = 10 A VGE = +15/-15 V @ Tj = 150 °C: Tj = 25 °C - ns Tj = 150 °C - ns Tj = 175 °C - ns tr Tj = 25 °C - ns Tj = 150 °C - ns Tj = 175 °C - ns Eon Tj = 25 °C - mJ Tj = 150 °C - mJ Tj = 175 °C - mJ td(off) Tj = 25 °C - ns Tj = 150 °C - ns Tj = 175 °C - ns tf Tj = 25 °C - ns Tj = 150 °C - ns Tj = 175 °C - ns Eoff Tj = 25 °C - mJ Tj = 150 °C - mJ Tj = 175 °C - mJ Rth(j-s) per IGBT, λpaste=0.8 W/(mK) 2.08 K/W Rth(j-s) per IGBT, λpaste=2.5 W/(mK) 1.79 K/W IGBT 7 - 12 VCE(sat) IC = 15 A VGE = 15 V chiplevel Tj = 25 °C 1.60 1.75 V Tj = 150 °C 1.78 1.93 V Tj = 175 1.82 1.97 V VCE0 chiplevel Tj = 25 °C 1.00 1.05 V Tj = 150 °C 0.80 0.85 V Tj = 175 °C 0.75 0.80 V rCE VGE = 15 V chiplevel Tj = 25 °C 40 47 m Ω Tj = 150 °C 65 72 m Ω Tj = 175 °C 71 78 m Ω VGE(th) VGE = VCE V, IC = 0.33 mA 5.15 5.8 6.45 V ICES VGE = 0 V, V CE = 1200 V, 25 1 mA Cies VCE = 25 V VGE = 0 V f = 1 MHz 2.80 nF Coes f = 1 MHz 0.04 nF Cres f = 1 MHz 0.01 nF
© by SEMIKRON Rev. 1.0 06.05.2022 3 MiniSKiiP® 2 ACC Twelvepack Open Emitter SKiiP 22ACC12T7V20 Features* 1200V Generation 7 IGBTs (T7) Robust and soft switching freewheeling diodes in CAL technology New SKR PEP diode technology for enhanced power and environmental robustness Highly reliable spring contacts for electrical connections UL recognized: File no. E63532 NTC T-Sensor Remarks Max. case temperature limited to TC=TS=125 °C Product reliability results valid for Tj≤150 °C; Tj,op >150°C during overload (Details see AN19-002) MiniSKiiP ″Technical Explanations″ and ″Mounting Instructions″ are part of the data sheet. Please refer to both documents for further information. For storage and case temperature with TIM see document ″Technical Explanations Thermal Interface Materials″ All diagrams refer to IGBT 7-12 and Diode 7-12 Characteristics Symbol Conditions min. typ. max. Unit IGBT 7 - 12 QG VGE = - 8V ... + 15 V 210 nC RGint Tj = 25 °C 0 Ω td(on) VCC = 600 V IC = 15 A RG on = 22 Ω RG off = 22 Ω VGE = +15/-15 V @ Tj = 150 °C: di/dton = 350 A/µs di/dtoff = 170 A/µs Tj = 25 °C 47 ns Tj = 150 °C 45 ns Tj = 175 °C 42 ns tr Tj = 25 °C 35 ns Tj = 150 °C 40 ns Tj = 175 °C 42 ns Eon Tj = 25 °C 1.33 mJ Tj = 150 °C 1.79 mJ Tj = 175 °C 1.93 mJ td(off) Tj = 25 °C 200 ns Tj = 150 °C 316 ns Tj = 175 °C 330 ns tf Tj = 25 °C 120 ns Tj = 150 °C 104 ns Tj = 175 °C 95 ns Eoff Tj = 25 °C 0.92 mJ Tj = 150 °C 1.6 mJ Tj = 175 1.69 mJ Rth(j-s) per IGBT, λpaste=0.8 W/(mK) 1.71 K/W Rth(j-s) per IGBT, λpaste=2.5 W/(mK) 1.46 K/W Diode 1 - 6 VF = VEC IF = 8 A VGE = 0 V chiplevel Tj = 25 °C 0.97 1.20 V Tj = 150 °C 0.84 1.07 V Tj = 175 °C 0.82 1.05 V VF0 chiplevel Tj = 25 °C 0.89 1.09 V Tj = 150 °C 0.73 0.92 V Tj = 175 °C 0.69 0.88 V rF chiplevel Tj = 25 °C 10 14 m Ω Tj = 150 °C 14 19 m Ω Tj = 175 °C 16 21 m Ω IRRM IF = 8 A VGE = -15 V VCC = 600 V @ Tj = 150 °C: Tj = 25 °C - A Tj = 150 °C - A Tj = 175 °C - A Qrr Tj = 25 °C - µC Tj = 150 °C - µC Tj = 175 °C - µC Err Tj = 25 °C - mJ Tj = 150 °C - mJ Tj = 175 °C - mJ Rth(j-s) per Diode, λpaste=0.8 W/(mK) 1.31 K/W Rth(j-s) per Diode, λpaste=2.5 W/(mK) 1.11 K/W
4 Rev. 1.0 06.05.2022 © by SEMIKRON MiniSKiiP® 2 ACC Twelvepack Open Emitter SKiiP 22ACC12T7V20 Features* 1200V Generation 7 IGBTs (T7) Robust and soft switching freewheeling diodes in CAL technology New SKR PEP diode technology for enhanced power and environmental robustness Highly reliable spring contacts for electrical connections UL recognized: File no. E63532 NTC T-Sensor Remarks Max. case temperature limited to TC=TS=125 °C Product reliability results valid for Tj≤150 °C; Tj,op >150°C during overload (Details see AN19-002) MiniSKiiP ″Technical Explanations″ and ″Mounting Instructions″ are part of the data sheet. Please refer to both documents for further information. For storage and case temperature with TIM see document ″Technical Explanations Thermal Interface Materials″ All diagrams refer to IGBT 7-12 and Diode 7-12 Creepage and clearance distance (spring to spring) between temperature sensor and phase DC- = 1mm (CTI 600) Characteristics Symbol Conditions min. typ. max. Unit Diode 7 - 12 VF = VEC IF = 15 A VGE = 0 V chiplevel Tj = 25 °C 2.38 2.71 V Tj = 150 °C 2.44 2.77 V Tj = 175 °C 2.26 2.58 V VF0 chiplevel Tj = 25 °C 1.30 1.50 V Tj = 150 °C 0.90 1.10 V Tj = 175 °C 0.82 0.98 V rF chiplevel Tj = 25 °C 72 81 m Ω Tj = 150 °C 103 111 m Ω Tj = 175 °C 96 107 m Ω IRRM IF = 15 A VGE = -15 V VCC = 600 V @ Tj = 150 °C: di/dtoff = 350 A/µs Tj = 25 °C 6.85 A Tj = 150 °C 9.25 A Tj = 175 °C 10 A Qrr Tj = 25 °C 0.96 µC Tj = 150 °C 2.07 µC Tj = 175 °C 2.5 µC Err Tj = 25 °C 0.32 mJ Tj = 150 °C 0.83 mJ Tj = 175 °C 1.03 mJ Rth(j-s) per Diode, λpaste=0.8 W/(mK) 2.18 K/W Rth(j-s) per Diode, λpaste=2.5 W/(mK) 1.87 K/W Module LCE - nH Ms to heat sink 2 2.5 Nm w 55 g Temperature Sensor R100 Tc=100°C (R25=5 kΩ) 493 ± 5% Ω B100/125 R2=R1*exp[B(1/T1-1/T2)], T(K), , K
© by SEMIKRON Rev. 1.0 06.05.2022 5 Fig. 1: Typ. output characteristic Fig. 2: Rated current vs. temperature Ic = f (Ts) Fig. 3: Typ. turn-on /-off energy = f (IC) Fig. 4: Typ. turn-on /-off energy = f (RG) Fig. 5: Typ. transfer characteristic Fig. 6: Typ. gate charge characteristic
6 Rev. 1.0 06.05.2022 © by SEMIKRON Fig. 9: Typ. transient thermal impedance Fig. 10: Typ. CAL diode forward characteristic Fig. 11: Typ. CAL diode peak reverse recovery current Fig. 12: Typ. CAL diode recovery charge
© by SEMIKRON Rev. 1.0 06.05.2022 7 Pinout
8 Rev. 1.0 06.05.2022 © by SEMIKRON This is an electrostatic discharge sensitive device (ESDS) due to international standard IEC 61340. *IMPORTANT INFORMATION AND WARNINGS The specifications of SEMIKRON products may not be considered as guarantee or assurance of product characteristics ("Beschaffenheitsgarantie"). The specifications of SEMIKRON products describe only the usual characteristics of products to be expected in typical applications, which may still vary depending on the specific application. Therefore, products must be tested for the respective application in advance. Application adjustments may be necessary. The user of SEMIKRON products is responsible for the safety of their applications embedding SEMIKRON products and must take adequate safety measures to prevent the applications from causing a physical injury, fire or other problem if any of SEMIKRON products become faulty. The user is responsible to make sure that the application design is compliant with all applicable laws, regulations, norms and standards. Except as otherwise explicitly approved by SEMIKRON in a written document signed by authorized representatives of SEMIKRON, SEMIKRON products may not be used in any applications where a failure of the product or any consequences of the use thereof can reasonably be expected to result in personal injury. No representation or warranty is given and no liability is assumed with respect to the accuracy, completeness and/or use of any information herein, including without limitation, warranties of non-infringement of intellectual property rights of any third party. SEMIKRON does not assume any liability arising out of the applications or use of any product; neither does it convey any license under its patent rights, copyrights, trade secrets or other intellectual property rights, nor the rights of others. SEMIKRON makes no representation or warranty of non-infringement or alleged non-infringement of intellectual property rights of any third party which may arise from applications. Due to technical requirements our products may contain dangerous substances. For information on the types in question please contact the nearest SEMIKRON sales office. This document supersedes and replaces all information previously supplied and may be superseded by updates. SEMIKRON reserves the right to make changes. Pinout