MW7IC3825N NXP | Alldatasheet

Document overview

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Technical content

Features

  • 100% PAR Tested for Guaranteed Output Power Capability
  • Characterized with Series Equivalent Large- -Signal Impedance Parameters and Common Source S- -Parameters
  • On- -Chip Matching (50 Ohm Input, RF Choke to Ground)
  • Integrated Quiescent Current Temperature Compensation with Enable/Disable Function(1)
  • Integrated ESD Protection
  • Greater Negative Gate- -Source VoltageRange for Improved Class C Operation
  • 225°C Capable Plastic Package
  • RoHS Compliant
  • In Tape and Reel. R1 Suffix = 500 Units, 44 mm Tape Width, 13 inch Reel. 1. Refer to AN1977,Quiescent Current Thermal Tracking Circuit in the RF Integrated Circuit Familyand to AN1987,Quiescent Current Control Document Number: MW7IC3825N Rev. 1, 11/2010 Freescale Semiconductor Technical Data MW7IC3825NR1 MW7IC3825GNR1 MW7IC3825NBR1 3400- -3600 MHz, 5 W AVG., 28 V WiMAX RF LDMOS WIDEBAND INTEGRATED POWER AMPLIFIERS CASE 1886- -01 TO- -270 WB- -16 PLASTIC MW7IC3825NR1 CASE 1887- -01 TO- -270 WB- -16 GULL PLASTIC MW7IC3825GNR1 CASE 1329- -09 TO- -272 WB- -16 PLASTIC MW7IC3825NBR1

Figure 1. Functional Block Diagram Figure 2. Pin Connections the source terminal for the transistors. © Freescale Semiconductor, Inc., 2008, 2010.All rights reserved.

Table 1. Maximum Ratings Table 2. Thermal Characteristics Table 3. ESD Protection Characteristics Table 4. Moisture Sensitivity Level Table 5. Electrical Characteristics(TA =2 5°C unless otherwise noted)

  1. Continuous use at maximum temperature will affect MTTF.
  2. MTTF calculator available at http://www.freescale.com/rf

Select Documentation/Application Notes - - AN1955.

  1. VGG =1 . 5 5xVGS(Q). Parameter measured on Freescale Test Fixture, due to resistive divider network on the board. Refer to Test Circuit

Table 5. Electrical Characteristics(TA =2 5°C unless otherwise noted)(continued) on CCDF. ACPR measured in 1 MHz Channel Bandwidth @±8.5 MHz Offset. Bandwidth, Input Signal PAR = 9.5 dB @ 0.01% Probability on CCDF.

  1. VGG =1 . 2 2xVGS(Q). Parameter measured on Freescale Test Fixture, due to resistive divider network on the board. Refer to Test Circuit
  2. Part internally matched both on input and output.
  3. Measurement made with device in straight lead configuration before anylead forming operation is applied.

0.01% Probability on CCDF. ACPR measured in 1 MHz Channel Bandwidth @±8.5 MHz Offset.

Figure 3. MW7IC3825NR1(GNR1)(NBR1) Test Circuit Schematic

Table 6. MW7IC3825NR1(GNR1)(NBR1) Test Circuit ComponentDesignations and Values Figure 4. MW7IC3825NR1(GNR1)(NBR1) Test Circuit Component Layout

Figure 9. Intermodulation Distortion Products Figure 10. Output Peak- -to- -Average Ratio Figure 11. WiMAX, ACPR, Power Gain and

4 Bursts, 10 MHz Channel Bandwidth

10 MHz Channel Bandwidth, Input Signal

64 QAM3/4,4B u r s t s

Figure 12. Broadband Frequency Response Figure 13. MTTF versus Junction Temperature is operated at VDD =2 8V d c ,Pout = 5 W Avg., and PAE = 15%. Figure 14. OFDM 802.16d Test Signal

10 MHz

Figure 15. WiMAX Spectrum Mask Specifications

Figure 16. Series Equivalent Source and Load Impedance

Table 7. Common Source S- -Parameters(VDD =2 8V ,IDQ1 = 130 mA, IDQ2 = 230 mA, TA =2 5°C, 50 Ohm System)

MW7IC3825NR1 MW7IC3825GNR1 MW7IC3825NBR1 RF Device Data Freescale Semiconductor PACKAGE DIMENSIONS

MW7IC3825NR1 MW7IC3825GNR1 MW7IC3825NBR1

MW7IC3825NR1 MW7IC3825GNR1 MW7IC3825NBR1 RF Device Data Freescale Semiconductor

MW7IC3825NR1 MW7IC3825GNR1 MW7IC3825NBR1

MW7IC3825NR1 MW7IC3825GNR1 MW7IC3825NBR1 RF Device Data Freescale Semiconductor

MW7IC3825NR1 MW7IC3825GNR1 MW7IC3825NBR1

MW7IC3825NR1 MW7IC3825GNR1 MW7IC3825NBR1 RF Device Data Freescale Semiconductor

MW7IC3825NR1 MW7IC3825GNR1 MW7IC3825NBR1

MW7IC3825NR1 MW7IC3825GNR1 MW7IC3825NBR1 RF Device Data Freescale Semiconductor

MW7IC3825NR1 MW7IC3825GNR1 MW7IC3825NBR1 PRODUCT DOCUMENTATION AND SOFTWARE Refer to the following documents and software to aid your design process. Application Notes

  • AN1907: Solder Reflow Attach Method for High Power RF Devices in Plastic Packages
  • AN1955: Thermal Measurement Methodology of RF Power Amplifiers
  • AN1977: Quiescent Current Thermal Tracking Circuit in the RF Integrated Circuit Family
  • AN1987: Quiescent Current Control for the RF Integrated Circuit Device Family
  • AN3263: Bolt Down Mounting Method for High Power RF Transistors and RFICs in Over- -Molded Plastic Packages Engineering Bulletins
  • EB212: Using Data Sheet Impedances for RF LDMOS Devices Software
  • Electromigration MTTF Calculator
  • RF High Power Model For Software, do a Part Number search at http://www.freescale.com, and select the “Part Number” link. Go to the Software & Tools tab on the part’s Product Summary page to download the respective tool.

REVISION HISTORY

The following table summarizes revisions to this document. Revision Date Description 0 Nov. 2008 • Initial Release of Data Sheet 1 Nov. 2010 • Corrected data sheet to remove “DC Block” from On- -chip Matching feature bullet and replaced with “RF Choke to Ground”, p. 1

  • Modified data sheet to reflect RF Test Reduction described in Product and Process Change Notification number, PCN13628, p. 1, 3
  • Added “RF Input Choke to Ground” circuitry to Functional Block Diagram and Test Circuit Schematic, p. 1, 5
  • Added Electromigration MTTF Calculator and RF High Power Model availability to Product Software, p. 22

MW7IC3825NR1 MW7IC3825GNR1 MW7IC3825NBR1 RF Device Data Freescale Semiconductor Information in this document is provided solely to enablesystem and software implementers to use Freescale Semiconductor products. There are no express or implied copyright licenses granted hereunder to design or fabricate any integrated circuits or integrated circuits based on the information in this document. Freescale Semiconductor reserves the right to make changes without further notice to any products herein. Freescale Semiconductor makes no warranty, representation or guarantee regarding the suitability of its productsfor any particular purpose, nor does Freescale Semiconductor assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and allliability, including without limitation consequential or incidental damages. “Typical” parameters that may be provided in Freescale Semiconductor data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals”, must be validated for each customer application by customer’s technical experts. Freescale Semiconductor does not convey any license under its patent rights nor the rights of others. Freescale Semiconductor products are not designed, intended, or authorized for use as components insystems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the Freescale Semiconductor product could create a situation where personal injury or death may occur. Should Buyer purchase or use Freescale Semiconductor products for any such unintended or unauthorized application, Buyer shall indemnify and hold Freescale Semiconductor and its officers, employees, subsidiaries, affiliates, and distributorsharmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that Freescale Semiconductor was negligent regarding the design or manufacture of the part. Freescalet and the Freescale logo are trademarks of Freescale Semiconductor, Inc. All other product or service names are the property of their respective owners. © Freescale Semiconductor, Inc. 2008, 2010. All rights reserved. How to Reach Us: Home Page: www.freescale.com Web Support: http://www.freescale.com/support USA/Europe or Locations Not Listed: Freescale Semiconductor, Inc. Technical Information Center, EL516

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