MWE6IC9100N NXP | Alldatasheet

Document overview

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Technical content

Features

  • Characterized with Series Equivalent Large- -Signal Impedance Parameters and Common Source S- -Parameters
  • On- -Chip Matching (50 Ohm Input, DC Blocked)
  • Integrated Quiescent Current Temperature Compensation with Enable/Disable Function(1)
  • Integrated ESD Protection
  • 225°C Capable Plastic Package
  • RoHS Compliant
  • In Tape and Reel. R1 Suffix = 500 Units per 44 mm, 13 inch Reel.

Figure 1. Functional Block Diagram Figure 2. Pin Connections the source terminal for the transistors.

  1. Refer to AN1977,Quiescent Current Thermal Tracking Circuit in the RF Integrated Circuit Familyand to AN1987,Quiescent Current Control

960 MHz, 100 W, 26 V

© Freescale Semiconductor, Inc., 2007- -2008.All rights reserved.

Table 1. Maximum Ratings Table 2. Thermal Characteristics Table 3. ESD Protection Characteristics Table 4. Moisture Sensitivity Level Table 5. Electrical Characteristics(TC =2 5°C unless otherwise noted)

  1. Continuous use at maximum temperature will affect MTTF.
  2. MTTF calculator available at http://www.freescale.com/rf

Select Documentation/Application Notes - - AN1955.

Table 5. Electrical Characteristics(TC =2 5°C unless otherwise noted)(continued)

Figure 3. MWE6IC9100NR1(GNR1)(NBR1) Test Circuit Schematic Table 6. MWE6IC9100NR1(GNR1)(NBR1) Test Circuit Component Designations and Values

Figure 4. MWE6IC9100NR1(GNR1)(NBR1) Test Circuit Component Layout

Figure 27. Series Equivalent Source and Load Impedance

Table 7. Common Source Scattering Parameters(VDD = 26 V, 50 ohm system, IDQ1 = 120 mA, IDQ2 = 950 mA)

MWE6IC9100NR1 MWE6IC9100GNR1 MWE6IC9100NBR1 RF Device Data Freescale Semiconductor PACKAGE DIMENSIONS

MWE6IC9100NR1 MWE6IC9100GNR1 MWE6IC9100NBR1

MWE6IC9100NR1 MWE6IC9100GNR1 MWE6IC9100NBR1 RF Device Data Freescale Semiconductor

MWE6IC9100NR1 MWE6IC9100GNR1 MWE6IC9100NBR1

MWE6IC9100NR1 MWE6IC9100GNR1 MWE6IC9100NBR1 RF Device Data Freescale Semiconductor

MWE6IC9100NR1 MWE6IC9100GNR1 MWE6IC9100NBR1

MWE6IC9100NR1 MWE6IC9100GNR1 MWE6IC9100NBR1 RF Device Data Freescale Semiconductor

MWE6IC9100NR1 MWE6IC9100GNR1 MWE6IC9100NBR1

MWE6IC9100NR1 MWE6IC9100GNR1 MWE6IC9100NBR1 RF Device Data Freescale Semiconductor

MWE6IC9100NR1 MWE6IC9100GNR1 MWE6IC9100NBR1 PRODUCT DOCUMENTATION Refer to the following documents to aid your design process. Application Notes

  • AN1907: Solder Reflow Attach Method for High Power RF Devices in Plastic Packages
  • AN1955: Thermal Measurement Methodology of RF Power Amplifiers
  • AN1987: Quiescent Current Control for the RF Integrated Circuit Device Family
  • AN3263: Bolt Down Mounting Method for High Power RF Transistors and RFICs in Over- -Molded Plastic Packages Engineering Bulletins
  • EB212: Using Data Sheet Impedances for RF LDMOS Devices

REVISION HISTORY

The following table summarizes revisions to this document. Revision Date Description 0 Feb. 2007 • Initial Release of Data Sheet 1 May 2007 • Changed Device box to 960 MHz to reflect functional test frequency, p. 1

  • Added Power Added Efficiency to GSM EDGE Application Typical Performances, p. 1
  • Changed “5:1 VSWR, @ 28 Vdc” to “10:1 VSWR, @ 32 Vdc” in the Capable of Handling bullet, p. 1
  • Added Footnote (1) to Quiescent Current Thermal Tracking bullet under Features section and to Quiescent Current Temperature Compensation in Fig. 1, Functional Block Diagram, p. 1
  • Added top- -level, 2- -stage block diagram depiction to Fig. 2, Pin Connections; updated Note, p. 1
  • Added Case Operating Temperature limit to the Maximum Ratings table and set limit to 150°C, p. 2
  • Added Stage 1 and Stage 2 DC Electrical Characteristics tables, p. 2, 3
  • In Table 6, Component Designations and Values, corrected Part Number ATC100B331JT500XT to ATC100B331JT200XT for C24 capacitor, p. 4
  • Updated Figs. 7 and 8, Power Gain versus Output Power, to remove non- -variable IDQ value, p. 6
  • Updated Fig. 9, Intermodulation Distortion Products versus Output Power, to show PEP and not CW; corrected frequency value to show 100 kHz Tone Spacing, p. 7
  • Updated graphical representation of Ideal/Actual in Fig. 11, Pulsed CW Output Power versus Input Power, to show correct 3 and 6 dB compression points, p. 7 2 June 2007 • Removed Case Operating Temperature from MaximumRatings table, p. 2. Case Operating Temperature rating will be added to the Maximum Ratings table when parts’ Operating Junction Temperature is increased to 225°C. 3 Dec. 2008 • Changed full frequency band in Typical GSM Performance bullet to f = 960 MHz to match actual production t e s t ,p .1
  • Changed Storage Temperature Range in Max Ratings table from - -65 to +200 to - -65 to +150 for standardization across products, p. 2
  • Added Case Operating Temperature limit to the Maximum Ratings table and set limit to 150°C, p. 2
  • Operating Junction Temperature increased from 200°C to 225°C in Maximum Ratings table, related “Continuous use at maximum temperature will affect MTTF” footnote added and changed 200°C to 225°C in Capable Plastic Package bullet, p. 1, 2
  • Corrected Z10 from 1.17” to 0.117” in the Test Circuit Schematic Z list, p. 4
  • Updated Part Numbers in Table 6, Component Designations and Values, to latest RoHS compliant part numbers, p. 4
  • Replaced Case Outline 1617- -01 with 1617- -02, Issue A, p. 1, 13- -15. Revised cross- -hatched area for exposed heat spreader. Added pin numbers 1, 12, 13, and 14 to Sheets 1 and 2. Corrected mm Min and Max values for dimension A1 to 0.99 and 1.09, respectively.
  • Replaced Case Outline 1618- -01 with 1618- -02, Issue A, p. 1, 16- -18. Added pin numbers 1, 12, 13, and 14 and Pin 1 Index designation to Sheet 1. Corrected dimensions e and e1 on Sheet 1. Removed Pin 5 designation from Sheet 2.
  • Replaced Case Outline 1621- -01 with 1621- -02, Issue A, p. 1, 19- -21. Added pin numbers 1, 12, 13, and 14 and Pin 1 Index designation to Sheet 1. Corrected dimensions e and e1 on Sheets 1 and 3. Removed Pin 5 designation from Sheet 2.
  • Added Product Documentation and Revision History, p. 22

MWE6IC9100NR1 MWE6IC9100GNR1 MWE6IC9100NBR1 RF Device Data Freescale Semiconductor Information in this document is provided solely to enablesystem and software implementers to use Freescale Semiconductor products. There are no express or implied copyright licenses granted hereunder to design or fabricate any integrated circuits or integrated circuits based on the information in this document. Freescale Semiconductor reserves the right to make changes without further notice to any products herein. Freescale Semiconductor makes no warranty, representation or guarantee regarding the suitability of its productsfor any particular purpose, nor does Freescale Semiconductor assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and allliability, including without limitation consequential or incidental damages. “Typical” parameters that may be provided in Freescale Semiconductor data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals”, must be validated for each customer application by customer’s technical experts. Freescale Semiconductor does not convey any license under its patent rights nor the rights of others. Freescale Semiconductor products are not designed, intended, or authorized for use as components insystems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the Freescale Semiconductor product could create a situation where personal injury or death may occur. Should Buyer purchase or use Freescale Semiconductor products for any such unintended or unauthorized application, Buyer shall indemnify and hold Freescale Semiconductor and its officers, employees, subsidiaries, affiliates, and distributorsharmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that Freescale Semiconductor was negligent regarding the design or manufacture of the part. Freescalet and the Freescale logo are trademarks of Freescale Semiconductor, Inc. All other product or service names are the property of their respective owners. © Freescale Semiconductor, Inc. 2007- -2008. All rights reserved. How to Reach Us: Home Page: www.freescale.com Web Support: http://www.freescale.com/support USA/Europe or Locations Not Listed: Freescale Semiconductor, Inc. Technical Information Center, EL516

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