20NM50 UTC | Alldatasheet
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UNISONIC TECHNOLOGIES CO., LTD 20NM50 Power MOSFET www.unisonic.com.tw 1 of 9 Copyright © 2022 Unisonic Technologies Co., Ltd QW-R205-158.F 20A, 500V N-CHANNEL SUPER-JUNCTION MOSFET DESCRIPTION The UTC 20NM50 is a Super Junction MOSFET Structure and is designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and a high rugged avalanche characteristics. This power MOSFET is usually used at AC-DC converters for power applications. FEATURES * RDS(ON) ≤ 0.24 Ω @ VGS=10V, ID=10A * Fast Switching Capability * Avalanche Energy Specified * Improved dv/dt Capability, High Ruggedness SYMBOL 1.Gate 3.Source 2.Drain ORDERING INFORMATION Ordering Number Package Pin Assignment Packing Lead Free Halogen Free 1 2 3 20NM50L-TA3-T 20NM50G-TA3-T TO-220 G D S Tube 20NM50L-TF1-T 20NM50G-TF1-T TO-220F1 G D S Tube 20NM50L-TF3T-T 20NM50G-TF3T-T TO-220F3 G D S Tube 20NM50L-T47-T 20NM50G-T47-T TO-247 G D S Tube 20NM50L-TN3-R 20NM50G-TN3-R TO-252 G D S Tape Reel Note: Pin Assignment: G: Gate D: Drain S: Source (1) T: Tube, R: Tape Reel (2) TA3: TO-220, TF1: TO-220F1, TF3T: TO-220F3, T47: TO-247, TN3: TO-252 (3) G: Halogen Free and Lead Free, L: Lead Free 20NM50G-TF1-T (1) Packing Type (2) Package Type (3) Green Package
UNISONIC TECHNOLOGIES CO., LTD 2 of 9 www.unisonic.com.tw QW-R205-158.F MARKING
UNISONIC TECHNOLOGIES CO., LTD 3 of 9 www.unisonic.com.tw QW-R205-158.F ABSOLUTE MAXIMUM RATINGS (TC=25°C, unless otherwise specified) PARAMETER SYMBOL RATINGS UNIT Drain-Source Voltage V DSS 500 V Gate-Source Voltage V GSS ±30 V Drain Current Continuous I D 20 A Pulsed (Note 2) I DM 40 A Avalanche Energy Single Pulsed (Note 3) E AS 545 mJ Peak Diode Recovery dv/dt (Note 4) dv/dt 9.5 V/ns Power Dissipation TO-220 PD 110 W TO-220F1/TO-220F3 32 W TO-247 180 W TO-252 62 W Junction Temperature T J +150 °C Storage Temperature T STG -55 ~ +150 °C Notes: 1. Absolute maximum ratings are those values beyond which the device could be permanently damaged. Absolute maximum ratings are stress ratings only and functional device operation is not implied. 2. Repetitive Rating: Pulse width limited by maximum junction temperature. 3. L = 100mH, IAS = 3.3A, VDD = 50V, RG = 25Ω, Starting TJ = 25°C 4. ISD ≤ 20A, di/dt ≤ 200A/µs, VDD ≤ BVDSS, Starting TJ = 25°C THERMAL DATA PARAMETER SYMBOL RATINGS UNIT Junction to Ambient TO-220/TO-220F1 TO-220F3 θJA 62.5 ° С/W TO-247 40 ° С/W TO-252 110 ° С/W Junction to Case TO-220 θJC 1.13 ° С/W TO-220F1/TO-220F3 3.91 ° С/W TO-247 0.69 ° С/W TO-252 2.01 ° С/W
UNISONIC TECHNOLOGIES CO., LTD 4 of 9 www.unisonic.com.tw QW-R205-158.F ELECTRICAL CHARACTERISTICS (TJ =25°C, unless otherwise specified) PARAMETER SYMBOL TEST CONDITIONS MIN TYP MAX UNIT OFF CHARACTERISTICS Drain-Source Breakdown Voltage BV DSS V GS=0V, ID=250µA 500 V Drain-Source Leakage Current I DSS V DS=500V, VGS=0V 25 µA Gate-Body Leakage Current I GSS V DS=0V, VGS=±30V ±100 nA ON CHARACTERISTICS Gate Threshold Voltage V GS(TH) V DS=VGS, ID=250µA 2.5 4.5 V Static Drain-Source On-Resistance R DS(ON) V GS=10V, ID=10A 0.24 Ω DYNAMIC PARAMETERS Input Capacitance C ISS VDS=25V, VGS=0V, f=1MHz 1090 pF Output Capacitance C OSS 880 pF Reverse Transfer Capacitance C RSS 120 pF SWITCHING PARAMETERS Total Gate Charge (Note 1) Q G VDS=400V, VGS=10V, ID=20A (Note 1, 2) 43 nC Gate to Source Charge Q GS 6 nC Gate to Drain Charge Q GD 18 nC Turn-ON Delay Time (Note 1) t D(ON) VDD=100V, VGS=10V, ID=20A, RG=25Ω (Note 1, 2) 16 ns Rise Time t R 30 ns Turn-OFF Delay Time t D(OFF) 134 ns Fall-Time t F 50 ns SOURCE- DRAIN DIODE RATINGS AND CHARACTERISTICS Maximum Body-Diode Continuous Current I S 20 A Maximum Body-Diode Pulsed Current I SM 40 A Drain-Source Diode Forward Voltage (Note 1) V SD I S=20A, VGS=0V 1.4 V Body Diode Reverse Recovery Time (Note 1) t rr IS=20A, VGS=0V, dIF/dt=100A/µs 430 ns Body Diode Reverse Recovery Charge Q rr 6.95 µC Notes: 1. Pulse Test : Pulse width ≤ 300μs, Duty cycle ≤ 2%. 2. Essentially independent of operating ambient temperature.
UNISONIC TECHNOLOGIES CO., LTD 5 of 9 www.unisonic.com.tw QW-R205-158.F TEST CIRCUITS AND WAVEFORMS Same Type as D.U.T. L VDDDriver VGS RG VDS D.U.T. + * dv/dt controlled by RG * ISD controlled by pulse period * D.U.T.-Device Under Test ISD Peak Diode Recovery dv/dt Test Circuit P. W. PeriodD=VGS (Driver) ISD (D.U.T.) IFM, Body Diode Forward Current di/dt IRM Body Diode Reverse Current Body Diode Recovery dv/dt Body Diode Forward Voltage Drop VDD 10V VDS (D.U.T.) VGS= P.W. Period Peak Diode Recovery dv/dt Waveforms
UNISONIC TECHNOLOGIES CO., LTD 6 of 9 www.unisonic.com.tw QW-R205-158.F TEST CIRCUITS AND WAVEFORMS VDS 90% 10% VGS tD(ON) tR tD(OFF) tF Switching Test Circuit Switching Waveforms 10V Charge QGS QGD QG VGS Gate Charge Test Circuit Gate Charge Waveform VDD tp Time BVDSS IAS ID(t) VDS(t) Unclamped Inductive Switching Test Circuit Unclamped Inductive Switching Waveforms
UNISONIC TECHNOLOGIES CO., LTD 7 of 9 www.unisonic.com.tw QW-R205-158.F TYPICAL CHARACTERISTICS
UNISONIC TECHNOLOGIES CO., LTD 8 of 9 www.unisonic.com.tw QW-R205-158.F TYPICAL CHARACTERISTICS (Cont.)
UNISONIC TECHNOLOGIES CO., LTD 9 of 9 www.unisonic.com.tw QW-R205-158.F TYPICAL CHARACTERISTICS (Cont.) UTC assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all UTC products described or contained herein. UTC products are not designed for use in life support appliances, devices or systems where malfunction of these products can be reasonably expected to result in personal injury. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. UTC reserves the right to make changes to information published in this document, including without limitation specifications and product descriptions, at any time and without notice. This document supersedes and replaces all information supplied prior to the publication hereof.