20N65Y CHONGQING | Alldatasheet

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http:// www.perfectway.cn 20N65Y

20 Amps,650 Volts N-CHANNEL MOSFET

 20A,650V,RDS(ON)MAX=0.50Ω@VGS=10V/10A  Low gate charge  Low Ciss  Fast switching  100% avalanche tested  Improved dv/dt capability TO-247 Absolute Maximum Ratings(TC=25℃,unless otherwise noted) Parameter Symbol 20N65Y UNIT Drain-Source Voltage VDSS 650 V Gate-Source Voltage VGSS ±30 Continuous Drain Current ID 20 A Pulsed Drain Current(Note1) IDM 80 Single Pulse Avalanche Energy (Note 2) EAS 900 mJ Avalanche Current(Note1) IAR 20 A Repetitive Avalanche Energy (Note1) EAR 630 mJ Reverse Diode dV/dt (Note 3) dv/dt 5 V/ns Operating Junction and Storage Temperature Range TJ,TSTG -55 to +150 ℃ Maximum lead temperature for soldering purposes, 1/8"from case for 5 seconds TL 260 ℃ Thermal Characteristics Parameter Symbol TO-220MF Units Maximum Junction-to-Case RthJC 0.3 ℃/W Maximum Power Dissipation TC=25℃ PD 417 W

http:// www.perfectway.cn Electrical Characteristics(Tc=25℃,unless otherwise noted) Parameter Symbol Test Conditions Min Typ Max Units Off Characteristics Drain-Source Breakdown Voltage BVDSS VGS=0V,ID=250uA 650 － － V Breakdown Temperature Coefficient ΔBVDSS /ΔTJ Reference to 25℃， ID=250uA － 0.6 － V/℃ Zero Gate Voltage Drain Current IDSS VDS=650V,VGS=0V － － 1 μA Gate-Body Leakage Current,Forward IGSSF VGS=30V,VDS=0V － － 100 nA Gate-Body Leakage Current,Reverse IGSSR VGS=-30V,VDS=0V － － -100 nA On Characteristics Gate-Source Threshold Voltage VGS(th) VDS=10V,ID=250uA 2 － 4 V Drain-Source On-State Resistance RDS(on) VGS=10V,ID=10A － 0.32 0.5 Ω Dynamic Characteristics Input Capacitance Ciss VDS=25V,VGS=0V, f=1.0MHZ － 2370 － pF Output Capacitance Coss － 1280 － pF Reverse Transfer Capacitance Crss － 95 － pF Switching Characteristics Turn-On Delay Time td(on) VDD=325V,ID=20A, RG=25Ω (Note4,5) － 62 － ns Turn-On Rise Time tr － 140 － ns Turn-Off Delay Time td(off) － 230 － ns Turn-Off Fall Time tf － 65 － ns Total Gate Charge Qg VDS=480V,ID=20A, VGS=10V, (Note4,5) 40 75 100 nC Gate-Source Charge Qgs 5 13.5 25 nC Gate-Drain Charge Qgd 10 36 50 nC Drain-Source Body Diode Charcteristics and Maximum Ratings Continuous Diode Forward Current IS － － 20 A Pulsed Diode Forward Current ISM － － 80 A Diode Forward Voltage VSD IS=20A,VGS=0V － － 1.5 V Reverse Recovery Time trr VGS=0V,IS=20A, dIF/dt=100A/us, (Note4) － 530 － ns Reverse Recovery Charge Qrr － 10.5 － μC Notes 1. Repetitive Rating:pulse width limited by maximum junction temperature. 2. VDD=50V,L=10mH,Rg=25Ω,IAS=20A , starling TJ=25℃. 3. ISD≤ID,dI/dt=200A/us,VDD≤BVDSS,starting TJ=25℃. 4. Pulse width≤300us;duty cycle≤2%. 5. Repetitive rating; pulse width limited by maximum junction temperature.

http:// www.perfectway.cn RATINGAND CHARACTERISTIC CURVES

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http:// www.perfectway.cn RATINGAND CHARACTERISTIC CURVES 0.2 0.1 ISD , Reverse Drain Current(A) 100 TJ =150℃ TJ =25℃ VGS =0V 10V 14V 15V TOP 13V 12V 11V TJ =25℃ ID,Drain-to-Source Current(A) VDS,Drain-to-Source Voltage(V) 20 302510 155 17510025-20 800 VDS , Drain-to-Source Brakdown Voltage(V) TJ , Junction Temperature(℃) 700 750 75 1501250 50-40 600 650 550 500 -60 VDS,Source-Drain Voltage(V) VDS,Drain-to-Source Voltage(V) VGS=10V 17510025-25 ID=10.0A RDS(on),Drain-to-Source On Resistance (Normalized) TJ , Junction Temperature(℃) 2.5 75 1501250 50-50 1.5 0.5 -75 100 100 300200 500 600400 1000 Capacitance(pF) 10000 VDS=480V VGS,Gate-to-Source Voltage(V) Qg ,Total Gate Charge(nC) 80 12010040 6020 VGS = 0V,f = 1MHz Ciss = Cgs Cgd,Cds Shorted Crss = Cgd Coss = Cds + Cgd Crss Coss Ciss

http:// www.perfectway.cn ID, Drain Current(A) VDS,Drain-to-Source Voltage(V) 100 100 100010 0.1 0.01 Operation in this Area Limited by RDS(on) IDM=Limited Limited by RDS(on) BVDSS Limited TC=25℃ TJ=150℃ Single Pulse 100μs 1ms 10ms 0.1 0.1 1 10010 RDS(ON) , Rrain-Source On-Resistance (Ω) Common Source Tc=25℃ Pulse Test VGS =10V ID, Drain Current(A) -55℃ +25℃ +150℃ Vgs , Gate to Source Voltage , Volts Id , Drain Current , Amps VGS =0V 2 4 6 8 10

http:// www.perfectway.cn Common Source VDS=10V ID=250uA Pulse Test -80 8040 TC, Case Temperature(℃) VTH , Gate Threshold Voltage(V) EAS , Avalanche Energy(mJ) TCH , Channel Temperature(Initial) (℃) 125 15075 10050 200 0.0001 Pulse Time(s) Nomalized Effective Transient Thermal Impedance -40 0 120 0.01 0.1 0.001 0.01 1010.1 Duty Cycle = 0.5 0.02 0.05 0.1 0.2 Single Pulse 140 400 800 600 1000