20N65

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UNISONIC TECHNOLOGIES CO., LTD 22N65 Power MOSFET www.unisonic.com.tw 1 of 8 Copyright © 2013 Unisonic Technologies Co., Ltd QW-R502-466.C 22A, 650V N-CHANNEL POWER MOSFET  DESCRIPTION As the SMPS MOSFET, the UTC 22N65 uses UTC’s advanced technology to provide excellent R DS(ON), low gate charge and operation with low gate voltages. This device is suitable for use as a load switch or in PWM applications.  FEATURES * RDS(ON) = 0.35Ω * Ultra low gate charge ( Typical 150 nC ) * Low reverse transfer capacitance ( C RSS = typical 36 pF ) * Fast switching capability * Avalanche energy specified * Improved dv/dt capability, high ruggedness  SYMBOL TO-247  ORDERING INFORMATION Ordering Number Package Pin Assignment Packing Lead Free Halogen Free 1 2 3 22N65L-T47-T 22N65G-T47-T TO-247 G D S Tube

UNISONIC TECHNOLOGIES CO., LTD 2 of 5 www.unisonic.com.tw Q W - R 5 0 2 - 4 6 6 . C  ABSOLUTE MAXIMUM RATINGS (TC =25°C, unless otherwise specified) PARAMETER SYMBOL RATINGS UNIT Drain-Source Voltage V DSS 650 V Gate-Source Voltage V GSS ±30 V Avalanche Current I AR 22 A Continuous Drain Current I D 22 A Pulsed Drain Current (Note 1) I DM 88 A Avalanche Energy Single Pulsed E AS 380 mJ Repetitive E AR 37 mJ Peak Diode Recovery dv/dt (Note 2) dv/dt 18 V/ns Power Dissipation P D 370 W Junction Temperature T J 150 °C Operating Temperature T OPR -55 ~ +150 °C Storage Temperature T STG -55 ~ +150 °C Note: 1. Repetitive rating; pulse width limited by max. junction temperature. 2. ISD ≤ 22A, di/dt ≤540 A/μs, VDD ≤ V(BR)DSS, TJ ≤150°C. 3. Absolute maximum ratings are those values beyond which the device could be permanently damaged. Absolute maximum ratings are stress ratings only and functional device operation is not implied.  THERMAL DATA PARAMETER SYMBOL RATINGS UNIT Junction to Ambient θJA 40 °C /W Junction to Case θJC 0.30 °C /W  ELECTRICAL CHARACTERISTICS(TJ=25°C, L=1.5mH,RG=25Ω,IAS =22A,Unless otherwise specified) PARAMETER SYMBOL TEST CONDITIONS MIN TYP MAX UNIT OFF CHARACTERISTICS Drain-Source Breakdown Voltage BV DSS V GS=0V, ID=250µA 650 V Drain-Source Leakage Current I DSS V DS=650V, VGS=0V 50 µA Gate- Source Leakage Current I GSS V DS=0V, VGS=±30V ±100 nA Breakdown Voltage Temperature Coefficient ∆BVDSS/∆TJ ID=1mA, Referenced to 25°C 0.30 V/°C ON CHARACTERISTICS Gate Threshold Voltage V GS(TH) V DS=VGS, ID=250µA 2.0 4.0 V Static Drain-Source On-Resistance R DS(ON) V GS=10V, ID=13A (Note 2) 0.3 0.35 Ω DYNAMIC PARAMETERS Input Capacitance C ISS VDS=25V, VGS=0V, f=1.0MHz 3200 pF Output Capacitance C OSS 350 pF Reverse Transfer Capacitance C RSS 36 pF SWITCHING PARAMETERS Turn-ON Delay Time t D(ON) VDD=300V, ID=22A, RG=6.2Ω, VGS=10V (Note 2) 100 ns Turn-ON Rise Time t R 250 ns Turn-OFF Delay Time t D(OFF) 650 ns Turn-OFF Fall-Time t F 550 ns Total Gate Charge Q G VDS=480V, VGS=10V, ID=22A (Note 2) 150 nC Gate Source Charge Q GS 45 nC Gate Drain Charge Q GD 76 nC DRAIN-SOURCE DIODE CHARACTERISTICS AND MAXIMUM RATINGS Drain-Source Diode Forward Voltage V SD V GS=0V, IS=22A 1.5 V Continuous Source Current (Body Diode) I S (Note 1) 22 A Pulsed Source Current (Body Diode) I SM 88 A Reverse Recovery Time t RR IS=22A, di/dt=100A/μs (Note 2) 590 890 ns Reverse Recovery Charge Q RR 7.2 11 µC Note: 1. Repetitive rating; pulse width limited by max. junction temperature. Pulse Width ≤ 300 s, Duty Cycle ≤ 2%.

UNISONIC TECHNOLOGIES CO., LTD 3 of 5 www.unisonic.com.tw Q W - R 5 0 2 - 4 6 6 . C  TEST CIRCUITS Switching Test Circuit Switching Waveforms Unclamped Inductive Switching Test Circuit Unclamped Inductive Switching Waveforms 50kΩ 0.3μF DUT VDS Same Type as D.U.T. 10V0.2μF 12V Charge QGS QGD QG VGS 3mA VGS IDIG Gate Charge Test Circuit Gate Char ge Waveform

UNISONIC TECHNOLOGIES CO., LTD 4 of 5 www.unisonic.com.tw Q W - R 5 0 2 - 4 6 6 . C  TEST CIRCUITS(Cont.) Same Type as D.U.T. L VDDDriver VGS RG VDS D.U.T. + * dv/dt controlled by RG * ISD controlled by pulse period * D.U.T.-Device Under Test P. W. PeriodD=VGS (Driver) ISD (D.U.T.) IFM, Body Diode Forward Current di/dt IRM Body Diode Reverse Current Body Diode Recovery dv/dt Body Diode Forward Voltage Drop VDD 10V VDS (D.U.T.) VGS= P.W. Period

UNISONIC TECHNOLOGIES CO., LTD 5 of 5 www.unisonic.com.tw Q W - R 5 0 2 - 4 6 6 . C  TYPICAL CHARACTERISTICS Drain Current, ID (µA) Drain Current, ID (µA) Drain Current, ID (A) Drain Current, ID (A) UTC assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all UTC products described or contained herein. UTC products are not designed for use in life support appliances, devices or systems where malfunction of these products can be reasonably expected to result in personal injury. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice.