20N65 SY | Alldatasheet

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Technical content

Features

: Molded plastic body Terminals : Solder plated, solderable per MIL-STD-750,Method 2026 Polarity : As marked Mounting Position : Any Mechanical Data Application Power factor correction PFC Switched modepower supplies(SMPS) Uninterruptible Power Supply UPS LLC Half-bridge Maximum Ratings And Electrical Characteristic s TO-247 Dimensions in inches and (millimeters) Schematic diagram (2) (3) (1) ABSOLUTE MAXIMUM RATINGS C =25°C, unless otherwise specified) PARAMETER SYMBOL RATINGS UNIT Drain-Source Voltage V DSS 650 V Gate-Source Voltage V GSS ±30 V Avalanche Current I AR A Continuous Drain Current D I A Pulsed Drain Current (Note 1) I DM A Avalanche Energy Single Pulsed E AS 380 mJ Repetitive E AR mJ Peak Diode Recovery dv/dt (Note 2) dv/dt V/ns Power Dissipation P D 370 W Junction Temperature T J 150 Operating Temperature T OPR -55 ~ +150 Storage Temperature T STG -55 ~ +150 Note: 1. Repetitive rating; pulse width limited by max. junction temperature. 2. I SD 22A, di/dt 540 A/ μ s, V DD V (BR)DSS , T J 150°C. 3. Absolute maximum ratings are those values beyond which the device could be permanently damaged. Absolute maximum ratings are stress ratings only and functional device oper ation is not implied. Ratings at 25 ambient temperature unless otherwise specified. Single phase half-wave 60Hz, resistive or inductive load, for capacitive load current derate by 20%. N65 www.shunyegroup.com.cn V2.22

θ JA °C /W Junction to Case θ JC 0.30 °C /W

ELECTRICAL CHARACTERISTICS

J =25°C, L=1.5mH,R G =25 Ω AS =22A,Unless otherwise specified) PARAMETER SYMBOL TEST CONDITIONS MIN TYP MAX UNIT OFF CHARACTERISTICS Drain-Source Breakdown Voltage BV DSS V GS =0V, I D =250µA 650 V Drain-Source Leakage Current I DSS V DS =650V, V GS =0V 50 µA Gate- Source Leakage Current I GSS V DS =0V, V GS =±30V ±100 nA Breakdown Voltage Temperature Coefficient BV DSS T J I D =1mA, Referenced to 25°C 0.30 V/°C ON CHARACTERISTICS Gate Threshold Voltage V GS TH V DS GS , I D =250µA 2.0 4.0 V Static Drain-Source On-Resistance R DS ON V GS =10V, I D =13A (Note 2) 0.3 0.35 Ω DYNAMIC PARAMETERS Input Capacitance C ISS V DS =25V, V GS =0V, f=1.0MHz 3200 pF Output Capacitance C OSS 350 pF Reverse Transfer Capacitance C RSS 36 pF SWITCHING PARAMETERS Turn-ON Delay Time t ON V DD =300V, I D =22A, R G =6.2 Ω V GS =10V (Note 2) 100 ns Turn-ON Rise Time t R 250 ns Turn-OFF Delay Time t OFF 650 ns Turn-OFF Fall-Time t F 550 ns Total Gate Charge Q G V DS =480V, V GS =10V, I D =22A (Note 2) 150 nC Gate Source Charge Q GS 45 nC Gate Drain Charge Q GD 76 nC DRAIN-SOURCE DIODE CHARACTERISTICS AND MAXIMUM RATINGS Drain-Source Diode Forward Voltage V SD V GS =0V, I S =22A 1.5 V Continuous Source Current (Body Diode) I S (Note 1) 22 A Pulsed Source Current (Body Diode) I SM 88 A Reverse Recovery Time t RR I S =22A, di/dt=100A/ μ s (Note 2) 590 890 ns Reverse Recovery Charge Q RR 7.2 11 µC Note: 1. Repetitive rating; pulse width limit ed by max. junction temperature. Pulse Width 300 s, Duty Cycle 2%. N65 www.shunyegroup.com.cn V2.22

Unclamped Inductive Switching Waveforms 50k Ω 0.3 μ F DUT V DS Same Type as D.U.T. 10V 0.2 μ F 12V Charge Q GS Q GD Q G V GS 3mA V GS I D I G Gate Charge Test Circuit Gate Char ge Waveform N65 www.shunyegroup.com.cn V2.22

TEST CIRCUITS(Cont.) Same Type as D.U.T. L V DD Driver V GS R G V DS D.U.T. * dv/dt controlled by R G * I SD controlled by pulse period * D.U.T.-Device Under Test P. W. Period V GS (Driver) I SD (D.U.T.) I FM , Body Diode Forward Current di/dt I RM Body Diode Reverse Current Body Diode Recovery dv/dt Body Diode Forward Voltage Drop V DD 10V V DS (D.U.T.) V GS P.W. Period N65 www.shunyegroup.com.cn V2.22

Drain Current, I D (µA) Drain Current, I D (µA) Drain Current, I D (A) Drain Current, I D (A) N65 www.shunyegroup.com.cn V2.22

Suggested Soldering Temperature Profile Recommended reflow methods: IR, vapor phase oven, hot air oven, wave solder. The device can be exposed to a maximum temperature of 265°C for 10 seconds. Devices can be cleaned using standard industry methods and solvents. If reflow temperatures exceed the recommended profile, devices may not meet the performance requirements. Note 550*325*135mm 1800 pieces Outer Box 520*115*60mm 360 pieces Inner Box 495*45*7mm 30 pieces Tube TO-247AB Tube Size Quantity Part Number Package Packaging Packing Information N65 www.shunyegroup.com.cn V2.22