HGTG20N60C3 INTERSIL | Alldatasheet

Document overview

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Technical content

Features

  • 45A, 600V, TC = 25oC
  • 600V Switching SOA Capability J = 150oC
  • Short Circuit Rating
  • Low Conduction Loss
  • Related Literature - TB334 “Guidelines for Soldering Surface Mount Components to PC Boards” Packaging JEDEC STYLE TO-247 JEDEC TO-220AB (ALTERNATE VERSION) JEDEC TO-263AB

Ordering Information

HGTG20N60C3 TO-247 G20N60C3 HGTP20N60C3 TO-220AB G20N60C3 HGT1S20N60C3S TO-263AB G20N60C3 NOTE: When ordering, use the entire part number. Add the suffix 9A to obtain the TO-263AB variant in the tape and reel, i.e., HGT1S20N60C3S9A. C E G G C E COLLECTOR (FLANGE) G CE COLLECTOR (FLANGE) G COLLECTOR E (FLANGE) INTERSIL CORPORATION IGBT PRODUCT IS COVERED BY ONE OR MORE OF THE FOLLOWING U.S. PATENTS 4,364,073 4,417,385 4,430,792 4,443,931 4,466,176 4,516,143 4,532,534 4,587,713 4,598,461 4,605,948 4,620,211 4,631,564 4,639,754 4,639,762 4,641,162 4,644,637 4,682,195 4,684,413 4,694,313 4,717,679 4,743,952 4,783,690 4,794,432 4,801,986 4,803,533 4,809,045 4,809,047 4,810,665 4,823,176 4,837,606 4,860,080 4,883,767 4,888,627 4,890,143 4,901,127 4,904,609 4,933,740 4,963,951 4,969,027 Data Sheet January 2000 CAUTION: These devices are sensitive to electrostatic discharge; follow proper ESD Handling Procedures. 1-888-INTERSIL or 321-724-7143| Copyright © Intersil Corporation 2000

Absolute Maximum Ratings TC = 25oC, Unless Otherwise Specified ALL TYPES UNITS Collector Current Continuous Maximum Temperature for Soldering 300 260 oC oC CAUTION: Stresses above those listed in “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress only rating and operation of the device at these or any other conditions above those indicated in the operational sections of this specification is not implied. NOTES: 1. Pulse width limited by maximum junction temperature. 2. V CE(PK) = 360V, TJ = 125oC, RG = 10Ω. Electrical SpecificationsTC = 25oC, Unless Otherwise Specified PARAMETER SYMBOL TEST CONDITIONS MIN TYP MAX UNITS Collector to Emitter Breakdown Voltage BVCES IC = 250µA, VGE = 0V 600 - - V Emitter to Collector Breakdown Voltage BVECS IC = 10mA, VGE = 0V 15 28 - V Collector to Emitter Leakage Current I CES VCE = BVCES TC = 25oC - - 250 µA TC = 150oC - - 5.0 mA Collector to Emitter Saturation Voltage VCE(SAT) IC = IC110 VGE = 15V TC = 25oC - 1.4 1.8 V TC = 150oC - 1.5 1.9 V Gate to Emitter Threshold Voltage V GE(TH) IC = 250µA, VCE = VGE 3.4 4.8 6.3 V Gate to Emitter Leakage Current I GES VGE =±20V - - ±250 nA Switching SOA SSOA T J = 150oC, RG = 10Ω, VGE = 15V, L = 100µH VCE = 480V 120 - - A VCE = 600V 20 - - A Gate to Emitter Plateau Voltage V GEP ICE = IC110 , VCE = 0.5 BVCES - 8.4 - V On-State Gate Charge Q G(ON) ICE = IC110 VCE = 0.5 BVCES VGE = 15V - 91 110 nC VGE = 20V - 122 145 nC Current Turn-On Delay Time t d(ON)I IGBT and Diode at TJ = 25oC ICE = IC110 VCE = 0.8 BVCES VGE = 15V R G = 10Ω L = 1mH Test Circuit (Figure 17) -2 8 3 2n s Current Rise Time t rI -2 4 2 8n s Current Turn-Off Delay Time t d(OFF)I - 151 210 ns Current Fall Time t fI -5 5 9 8n s Turn-On Energy (Note 4) E ON1 - 295 320 µJ Turn-On Energy (Note 4) E ON2 - 500 550 µJ Turn-Off Energy (Note 3) E OFF - 500 700 µJ HGTG20N60C3, HGTP20N60C3, HGT1S20N60C3S

All Intersil semiconductor products are manufactured, assembled and tested underISO9000 quality systems certification. Intersil semiconductor products are sold by description only. Intersil Corporation reserves the right to make changes in circuit design and/or specifications at any time with- out notice. Accordingly, the reader is cautioned to verify that data sheets are current before placing orders. Information furnished by Intersil is believed to be accurate and reliable. However, no responsibility is assumed by Intersil or its subsidiaries for its use; nor for any infringements of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of Intersil or its subsidiaries. For information regarding Intersil Corporation and its products, see web sitewww.intersil.com Handling Precautions for IGBTs Insulated Gate Bipolar Transistors are susceptible to gate-insulation damage by the electrostatic discharge of energy through the devices. When handling these devices, care should be exercised to assure that the static charge built in the handler’s body capacitance is not discharged through the device. With proper handling and application procedures, however, IGBTs are currently being extensively used in production by numerous equipment manufacturers in military, industrial and consumer applications, with virtually no damage problems due to electrostatic discharge. IGBTs can be handled safely if the following basic precautions are taken: 1. Prior to assembly into a circuit, all leads should be kept shorted together either by the use of metal shorting springs or by the insertion into conductive material such as “ECCOSORBD™ LD26” or equivalent. 2. When devices are removed by hand from their carriers, the hand being used should be grounded by any suitable means - for example, with a metallic wristband. 3. Tips of soldering irons should be grounded. 4. Devices should never be inserted into or removed from circuits with power on. 5. Gate Voltage Rating- Never exceed the gate-voltage rating of V GEM . Exceeding the rated VGE can result in permanent damage to the oxide layer in the gate region. 6. Gate Termination- The gates of these devices are essentially capacitors. Circuits that leave the gate open- circuited or floating should be avoided. These conditions can result in turn-on of the device due to voltage buildup on the input capacitor due to leakage currents or pickup. 7. Gate Protection- These devices do not have an internal monolithic Zener diode from gate to emitter. If gate protection is required an external Zener is recommended. Operating Frequency Information Operating frequency information for a typical device (Figure 3) is presented as a guide for estimating device performance for a specific application. Other typical frequency vs collector current (I CE ) plots are possible using the information shown for a typical unit in Figures 5, 6, 7, 8, 9 and 11. The operating frequency plot (Figure 3) of a typical device shows f MAX1 or fMAX2 ; whichever is smaller at each point. The information is based on measurements of a typical device and is bounded by the maximum rated junction temperature. f MAX1 is defined by fMAX1 = 0.05/(td(OFF)I+ td(ON)I). Deadtime (the denominator) has been arbitrarily held to 10% of the on-state time for a 50% duty factor. Other definitions are possible. t d(OFF)I and td(ON)I are defined in Figure 18. Device turn-off delay can establish an additional frequency limiting condition for an application other than T JM . td(OFF)I is important when controlling output ripple under a lightly loaded condition. f MAX2 is defined by fMAX2 = (PD - PC )/(EOFF + EON2 ). The allowable dissipation (PD ) is defined by PD =( TJM -TC )/RθJC. The sum of device switching and conduction losses must not exceed P D . A 50% duty factor was used (Figure 3) and the conduction losses (PC ) are approximated by PC =( VCE xICE )/2. EON2 and EOFF are defined in the switching waveforms shown in Figure 18. EON2 is the integral of the instantaneous power loss (ICE x VCE ) during turn-on and EOFF is the integral of the instantaneous power loss (ICE xV CE ) during turn-off. All tail losses are included in the calculation for EOFF ; i.e., the collector current equals zero (ICE = 0). HGTG20N60C3, HGTP20N60C3, HGT1S20N60C3S ECCOSORBD™ is a trademark of Emerson and Cumming, Inc.